LOW NOISE L TO K-BAND GaAs MESFET SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NFOPT 1

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1 FEATURES LOW NOISE FIGURE NF = 1.6 db TYP at f = 1 GHz HIGH ASSOCIATED GAIN GA = 9.5 db TYP at f = 1 GHz LG = 0.3 µm, WG = 80 µm EPITAXIAL TECHNOLOGY LOW PHASE NOISE DESCRIPTION The features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si0 and Si3N4 for scratch protection as well as surface stability. This device is suitable for both amplifier and oscillator applications in the consumer and industrial markets. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER PACKAGE OUTLINE 00 (CHIP) SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NFOPT 1 GA 1 LOW NOISE L TO K-BAND GaAs MESFET Optimum Noise Figure, VDS = 3 V, IDS = ma, f = 4 GHz db f = 1 GHz db Associated Gain, VDS = 3 V, IDS = ma, f = 4 GHz db f = 1 GHz db P1dB Output Power at 1 db Compression, VDS = 3 V, IDs = 30 ma, dbm 14.5 f =1 GHz IDSS Saturated Drain Current, VDS = 3 V, VGS = 0 ma 0 40 VP Pinch-Off Voltage, VDS = 3 V, IDS = 0.1 ma V gm Transconductance, VDS = 3 V, IDS = ma ms 0 50 IGSO Gate to Source Leakage Current at VGS = -5 V µa 1.0 RTH (CH-C) Thermal Resistance (Channel to Case) C/W 190 Noise Figure, NF (db) NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = ma Frequency, f (GHz) 1. RF performance is determined by packaging and testing samples per wafer; wafer rejection criteria for standard devices is rejects for samples.. Chip mounted on infinite heat sink GA NF Associated Gain, GA (db) California Eastern Laboratories

2 ABSOLUTE MAXIMUM RATINGS 1 (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 5 VGD Gate to Drain Voltage V -6 VGS Gate to Source Voltage V -5 IDS Drain Current ma IDSS PIN RF Input (CW) dbm +15 TCH Channel Temperature C 175 TSTG Storage Temperature C -65 to +175 PT Total Power Dissipation mw Operation in excess of any one of these parameters may result in permanent damage.. With chip mounted on a copper heat sink. TYPICAL PERFORMANCE CURVES (TA = 5 C) Drain Current, IDS (ma) Total Power Dissipation, PT (mw) POWER DERATING CURVE Ambient Temperature, TA ( C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = 3 V Drain Current, IDS (ma) DC PERFORMANCE Gate to Source Voltage, VGS (V) Drain Voltage, VDS (V) VGS = 0 V -0. V -0.4 V -0.6 V

3 TYPICAL SCATTERING PARAMETERS VDS = V, ID = ma FREQUENCY S11 S1 S1 S K MAG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) S-parameters include bond wires. Gate: Total wire (s), per bond pad, 0.098" (756 µm) long each wire. Drain: Total 739 wire(s), per bond pad, 0.091" (739 µm) long each wire. Source:Total 4 wire (s), per side, " (47 µm) long each wire. Wire: " (17.8 µm) Diameter, Gold.. Gain Calculations: MAG = S1 (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S S11 6 GHz MAG = Maximum Available Gain MSG = Maximum Stable Gain S 6 GHz S11 S Coordinates in Ohms Frequency in GHz (VDS = V, ID = ma) 180 S1 5 S S1 6 GHz S1 6 GHz S S1 S1 315

4 TYPICAL SCATTERING PARAMETERS VDS = 3 V, ID = ma FREQUENCY S11 S1 S1 S K MAG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) S-parameters include bond wires. Gate: Total wire (s), per bond pad, 0.098" (756 µm) long each wire. Drain: Total 739 wire(s), per bond pad, 0.091" (739 µm) long each wire. Source:Total 4 wire (s), per side, " (47 µm) long each wire. Wire: " (17.8 µm) Diameter, Gold.. Gain Calculations: MAG = S1 (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S S GHz MAG = Maximum Available Gain MSG = Maximum Stable Gain S 6 GHz S11-0 S Coordinates in Ohms Frequency in GHz (VDS = 3 V, ID = ma) 180 S1 S1 5 S S GHz S1 6 GHz S1 S1 315

5 TYPICAL SCATTERING PARAMETERS S11-0 S - -. VDS = 3 V, ID = 30 ma FREQUENCY S11 S1 S1 S K MAG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) S-parameters include bond wires. Gate: Total wire (s), per bond pad, 0.098" (756 µm) long each wire. Drain: Total 739 wire(s), per bond pad, 0.091" (739 µm) long each wire. Source:Total 4 wire (s), per side, " (47 µm) long each wire. Wire: " (17.8 µm) Diameter, Gold.. Gain Calculations: MAG = S1 (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S MAG = Maximum Available Gain MSG = Maximum Stable Gain S11 6 GHz S 6 GHz Coordinates in Ohms Frequency in GHz (VDS = 3 V, ID = 30 ma) 180 S1 135 S S1 S1 6 GHz S1 S S1 6 GHz 315 0

6 TYPICAL SCATTERING PARAMETERS 1 VDS = 4 V, ID = ma FREQUENCY S11 S1 S1 S K MAG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) S-parameters include bond wires. Gate: Total wire (s), per bond pad, 0.098" (756 µm) long each wire. Drain: Total 739 wire(s), per bond pad, 0.091" (739 µm) long each wire. Source:Total 4 wire (s), per side, " (47 µm) long each wire. Wire: " (17.8 µm) Diameter, Gold.. Gain Calculations: MAG = S1 (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 MAG = Maximum Available Gain MSG = Maximum Stable Gain ORDERING INFORMATION PART NUMBER IDSS SELECTION (ma) 0 to (Standard) N 0 to 50 M 50 to 80 L 80 to OUTLINE DIMENSIONS (Units in µm) S1 13 SOURCE (CHIP) (Units in µm) DRAIN S1 S1 GATE GATE SOURCE Note: All dimensions are typical unless otherwise stated. 450 DRAIN

7 (L) NONLINEAR MODEL SCHEMATIC FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO -.04 RG 6 VTOSC 0 RD ALPHA.5 RS BETA RGMET 0 GAMMA KF 0 GAMMADC 0.06 AF 1 Q 1.7 TNOM 7 DELTA 0.4 XTI 3 VBI 1 EG 1.43 IS 7.3e-1 VTOTC 0 N 1. BETATCE 0 RIS 0 FFE 1 RID 0 TAU 6e-1 CDS 0.15e-1 RDB 000 CBS 1e-9 CGSO CGDO 0.55e e-1 DELTA1 0.3 DELTA 0. FC 0.5 VBR Infinity (1) Series IV Libra TOM Model GATE LG 0.36nH Q1 SOURCE LS 0.01nH UNITS Parameter time LD 0.36nH capacitance inductance resistance voltage current DRAIN Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.5 to 0 GHz Bias: VDS = V to 4 V, ID = ma to 30 ma Date: //97

8 (N) NONLINEAR MODEL SCHEMATIC FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO RG 6 VTOSC 0 RD ALPHA 4.5 RS BETA RGMET 0 GAMMA 0.08 KF 0 GAMMADC 0.05 AF 1 Q 1.9 TNOM 7 DELTA 0.4 XTI 3 VBI 1 EG 1.43 IS 7.3e-1 VTOTC 0 N 1. BETATCE 0 RIS 0 FFE 1 RID 0 TAU 6e-1 CDS 0.15e-1 RDB 000 CBS 1e-9 CGSO CGDO 0.5e e-1 DELTA1 0.3 DELTA 0. FC 0.5 VBR Infinity (1) Series IV Libra TOM Model GATE LG 0.36nH Q1 SOURCE LS 0.0nH UNITS Parameter time LD 0.36nH capacitance inductance resistance voltage current DRAIN Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.5 to 0 GHz Bias: VDS = V to 4 V, ID = ma to 30 ma Date: //97 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA (408) Telex FAX (408) Hour Fax-On-Demand: (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE PRINTED IN USA ON RECYCLED PAPER -9/98