NEC's SUPER LOW NOISE HJ FET

Transcription

1 NEC's SUPER LOW NOISE HJ FET NE31S1 FEATURES SUPER LOW NOISE FIGURE:.35 db TYP at f = 1 GHz HIGH ASSOCIATED GAIN: 13.5 db TYP at f = 1 GHz GATE LENGTH: LG. µm GATE WIDTH: WG = 16 µm OUTLINE DIMENSION (Units in mm) PACKAGE OUTLINE SO1. ±. 1. ±. DESCRIPTION K 4.5 TYP.±. NEC's NE31S1 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE 31S1 is housed in a low cost plastic package which is available in tape and reel. NEC's stringent quality assurance and test procedures assure the highest reliability and performance..15 ± TYP 1.9 ± MAX 1. Source. Drain 3. Source 4. Gate.4 MAX 4. ±. ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER NE31S1 PACKAGE OUTLINE S1 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX GA Associated Gain 1, VDS = V, ID = 1 ma, f = 1 GHz db NF Noise Figure 1, VDS = V, ID = 1 ma, f = 1 GHz db gm Transconductance, VDS = V, ID = 1 ma ms 4 55 IDSS Saturated Drain Current, VDS = V, VGS = V ma VP Gate to Source Cutoff Voltage, VDS = V, ID = 1 µa V IGSO Gate to Source Leakage Current, VGS = -3 V ua Typical values of noise figures and associated gain are those obtained when 5% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories

2 NE31S1 ABSOLUTE MAXIMUM RATINGS 1 (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4. VGS Gate to Source Voltage V -3. IDS Drain Current ma IDSS IGS Gate Current µa 1 RECOMMENDED OPERATING CONDITIONS (TA = 5 C) PART NUMBER NE31S1 SYMBOLS PARAMETERS UNITS MIN TYP MAX VDS Drain to Source Voltage V 3 IDS Drain Current ma 1 15 PIN Input Power dbm PT Total Power Dissipation mw 165 TCH Channel Temperature C 15 TSTG Storage Temperature C -65 to Operation in excess of any one of these parameters may result in permanent damage. TYPICAL NOISE PARAMETERS (TA = 5 C) TYPICAL MOUNT PAD LAYOUT (Units in mm).4 mm TYP FREQ. NFMIN GA ΓOPT (GHz) (db) (db) MAG ANG Rn/5 VDS = V, ID = 1 ma mm TYP ORDERING INFORMATION PART NUMBER SUPPLY FORM MARKING NE31S1-T1 Tape & Reel 1 pcs/reel NE31S1-T1B Tape & Reel 4 pcs/reel

3 NE31S1 TYPICAL PERFORMANCE CURVES (TA = 5 C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 6 VGS =. V V 5 85 Drain Current, ID (ma) V.7 V.36 V.45 V.54 V.63 V Drain Current, ID (ma) Drain to Source Voltage, VDS (V) Gate to Source Voltage, VGS (V). 5 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 4 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY Total Power Dissipation, (PT) mw Maximum Stable Gain, MSG (db) Maximum Available Gain, MAG (db) Forward Insertion Gain, S1S (db) MSG. S1S VDS = V ID = 1 ma MAG Ambient Temperature, TA ( C) Frequency, f (GHz) NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY NOISE FIGURE and ASSOCIATED GAIN vs. DRAIN CURRENT Noise Figure, NF (db) 1..5 GA VDS = V ID = 1 ma Associated Gain, GA (db) Noise Figure, NF (db) VDS = V f = 1 GHz GA Associated Gain, GA (db) NF NF 1 3 Frequency, f (GHz) Drain Current, ID (ma)

4 NE31S1 TYPICAL SCATTERING PARAMETERS (TA = 5 C) j5 j5 j j1 -j j5 -j5 S S -j1 Coordinates in Ohms Frequency in GHz VD = V, ID = 5 ma S1-15 S1-1 S S1 NE31S1 VD = V, ID = 5 ma FREQUENCY S1 S1 S K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) Gain Calculation: MAG = S1 S1 (K ± When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S, = S - S1 S1 S1 S1 S1 K - 1 ). MAG = Maximum Available Gain MSG = Maximum Stable Gain

5 NE31S1 TYPICAL SCATTERING PARAMETERS (TA = 5 C) j5 j5 j j1 -j j5 -j5 S S -j1 Coordinates in Ohms Frequency in GHz VD = V, ID = 1 ma S1 S S S1 NE31S1 VD = V, ID = 1 ma FREQUENCY S1 S1 S K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) Gain Calculation: MAG = S1 S1 (K ± When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S, = S - S1 S1 S1 S1 S1 K - 1 ). MAG = Maximum Available Gain MSG = Maximum Stable Gain

6 NE31S1 TYPICAL SCATTERING PARAMETERS (TA = 5 C) j5 j5 j j1 -j j5 -j5 S S -j1 Coordinates in Ohms Frequency in GHz VD = V, ID = ma S1 S1-1 S S1 NE31S1 VD = V, ID = ma FREQUENCY S1 S1 S K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) Gain Calculation: MAG = S1 S1 (K ± When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S, = S - S1 S1 S1 S1 S1 K - 1 ). MAG = Maximum Available Gain MSG = Maximum Stable Gain

7 NE31S1 NE31S1 NONLINEAR MODEL SCHEMATIC CGD_PKG.1pF GATE Rgx 6 ohms Lgx.7nH Q1 Ldx.68nH Rdx 6 ohms DRAIN CGS_PKG.4pF Lsx.1nH CDS_PKG.35PF Rsx.6 ohms SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO RG 8 VTOSC RD.5 ALPHA 8 RS 3 BETA.95 RGMET GAMMA.7 KF GAMMADC.65 AF 1 Q.5 TNOM 7 DELTA.5 XTI 3 VBI.6 EG 1.43 IS 1e-14 VTOTC N 1 BETATCE RIS FFE 1 RID TAU 4e-1 CDS.1e-1 RDB 5 CBS 1e-9 CGSO.36e-1 CGDO.14e-1 DELTA1.3 DELTA.6 FC.5 VBR Infinity (1) Series IV Libra TOM Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps MODEL RANGE Frequency:.1 to.5 GHz Bias: VDS = 1 V to 3 V, ID = 5 ma to 3 ma Date: 1/99 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 7/1/4 A Business Partner of NEC Compound Semiconductor Devices, Ltd.