MOS FIELD EFFECT TRANSISTOR 2SK2159

Transcription

1 DATA SHEET MOS FIELD EFFECT TRANSISTOR SK59 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The SK59 is an N-channel vertical type MOS FET featuring an operating voltage as low as.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the SK59 is suitable for driving actuators of low-voltage portable systems such as headphone stereo sets and camcorders. FEATURES Capable of drive gate with.5 V Small RDS(on) RDS(on) =.7 Ω =.5 V, ID =. A RDS(on) =. Ω = 4. V, ID =. A.8 MIN. PACKAGE DIMENSIONS (in millimeters).4 ± ±..6 ±..5 ±. 4. ±.5.4 ± ±.6..5 ± EQUIVALENT CIRCUIT Gate protection diode Internal diode PIN CONNECTION. Source (S). Drain (D) Marking: NW. Gate (G) ABSOLUTE MAXIMUM RATINGS (TA = 5 C) PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT Drain to Source Voltage VDSS VGS = 6 V Gate to Source Voltage VGSS VDS = ±4 V Drain Current (DC) ID(DC) ±. A Drain Current (pulse) ID(pulse) PW ms, ±4. A Duty Cycle 5 % Total Power Dissipation PT Mounted on 6 cm.7 mm ceramic substrate.. W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to +5 C Document No. D5EJVDS (nd edition) Date Published June 996 P Printed in Japan 996

2 SK59 ELECTRICAL CHARACTERISTICS (TA = 5 C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current IDSS VDS = 6 V, VGS =. µa Gate Leakage Current IGSS VGS = ±4 V, VDS = ± µa Gate Cut-off Voltage VGS(off) VDS = V, ID = ma.5.9. V Forward Transfer Admittance yfs VDS = V, ID =. A.4 S Drain to Source On-state Resistance RDS(on) VGS =.5 V, ID =. A.55.7 Ω Drain to Source On-state Resistance RDS(on) VGS =.5 V, ID =. A.7.5 Ω Drain to Source On-state Resistance RDS(on) VGS = 4. V, ID =. A.. Ω Input Capacitance Ciss VDS = V, VGS =, 9 pf Output Capacitance Coss f =. MHz 9 pf Reverse Transfer Capacitance Crss pf Turn-On Delay Time td(on) VDD = 5 V, ID =. A 8 ns Rise Time tr VGS(on) = V, RG = Ω 8 ns Turn-Off Delay Time td(off) RL = 5 Ω 7 ns Fall Time tf ns

3 SK59 TYPICAL CHARACTERISTICS (TA = 5 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA Single pulse dt - Derating Factor - % DC ms PW = ms ms TA - Ambient Temperature - C VDS - Drain to Source Voltage - V 5 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS = V TRANSFER CHARACTERISTICS 4 7 V.5 V. V.5 V. V.5 V VGS =. V.. 5 C 5 C VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V yfs - Forward Transfer Admittance - S... FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = V TA = 5 C 5 C.. 75 C vs. DRAIN CURRENT. VGS =.5 V 5 C 5 C..

4 SK vs. DRAIN CURRENT. VGS =.5 V 5 C 5 C vs. DRAIN CURRENT. VGS = 4. V 5 C 5 C.. vs. GATE TO SOURCE VOLTAGE ID = A ID = A VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance - pf 5 5 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = Crss f = MHz 5 5 VDS - Drain to Source Voltage - V Ciss Coss SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE td(on), tr, td(off), tf - Switching Time - ns 5 5. td(off)..5 5 tr tf td(on) VDD = 5 V VGS(on) = V RG = Ω ISD - Source to Drain Current - A VSD - Source to Drain Voltage - V 4

5 SK59 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI- IEI-9 C55E MEI- X679E 5

6 SK59 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: Standard, Special, and Specific. The Specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard:Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.