MEI. 20V P-Channel Enhancement-Mode MOSFET P2301BLT1G. Features. Simple Drive Requirement Small Package Outline Surface Mount Device G 1 2 V DS -20

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1 V P-Channel Enhancement-Mode MOSFET VDS= -V RDS(ON), = mω RDS(ON), Vgs@-.5V, Ids@-.A = 15 mω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product SOT 3 (TO 3AB) 3 D Simple Drive Requirement Small Package Outline Surface Mount Device G 1 S Ordering Information Device Marking Shipping B 3/Tape & Reel P31BLT3G B,/Tape & Reel Maximum Ratings and Thermal Characteristics (T A = 5 o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol Limit Unit V DS - V V GS ± I D -. A I DM - Maximum Power Dissipation TA = 5 o C P D.9 TA = 75 o C.57 Operating Junction and Storage Temperature Range T J, T stg -55 to 15 Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) ) R qja 1 Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation. 1-in oz Cu PCB board 3. Guaranteed by design; not subject to production testing R qjc W o C o C/W

2 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BV DSS V GS = V, I D = -5uA V Drain-Source On-State Resistance R DS(on) V GS = -.5V, I D = -.A 9 mω Drain-Source On-State Resistance R DS(on) V GS = -.5V, I D = -.A 3 15 mω Gate Threshold Voltage V GS(th) V DS =V GS, I D = -5uA V Zero Gate Voltage Drain Current I DSS V DS = -9.V, V GS = V -1 ua Gate Body Leakage I GSS V GS = ±V, V DS = V ± na Gate Resistance Rg Ω Forward Transconductance g fs V DS = -5V, I D = -.A.5 S Dynamic 3) Total Gate Charge Q g 15.3 V DS = -V, I D = -.A Gate-Source Charge Q gs V GS = -.5V 5.9 Gate-Drain Charge Q gd.7 Turn-On Delay Time t d(on) 17. Turn-On Rise Time t r V DD = -V, R L = Ω Ι D = 1Α, V GEN = -.5V 3.73 Turn-Off Delay Time t d(off) R G = Ω 3.5 Turn-Off Fall Time t f.19 Input Capacitance C iss.51 Output Capacitance C oss V DS = -V, V GS = V f = 1. MHz 15.5 Reverse Transfer Capacitance C rss 97. nc ns pf Source-Drain Diode Max. Diode Forward Current I S -. A Diode Forward Voltage V SD I S = -.75A, V GS = V V Note: Pulse test: pulse width <= 3us, duty cycle<= %

3 TYPICAL ELECTRICAL CHARACTERISTICS Id DRAIN CURRENT(A) Vds=5V 5 C Vgs, GATE-TO-SOURCE VOLTAGE(V) Id, DRAIN CURRENT(A) Vgs=.5V 5 C Vgs=V Vgs=1.5V Vds,DRAIN-TO-SOURCE VOLTAGE(V) Figure 1. Transfer Characteristics Figure. On Region Characteristics Rds(on)-On-Resistance(Ω) Vgs=1.5V Vgs=V Vgs=.5V Id-Drain current Rds(on)-On-Resistance(Ω) Id=3.5A Vgs-Gate-to-Source Voltage(V) Figure 3. On Resistance versus Drain Current Figure. On-Resistance vs. Gate-to-Source Voltage

4 TYPICAL ELECTRICAL CHARACTERISTICS Vgs(V) Qgs(nC) Capacitance Ciss Coss Crss Vds Figure 5. Gate Charge Figure. Capacitance Rds(on) (mr) VGS=-.5V ID=A Temp( o C) VGS(TH)(V) ID=5uA Temp( o C) Figure 7. On-Resistance Vs.Junction Temperature Figure. Vth Vs.Junction Temperature

5 SOT-3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI A L Y1.5M,19. CONTROLLING DIMENSION: INCH. V 3 1 G B S DIM INCHES MILLIMETERS MIN MAX MIN MAX A B C D G H D H C K J J K L S V inches mm