Electronics II. Previous Lecture
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1 Fall 2014 (Rev. 3.0) Lecture 08 FET Small Signal Analysis Muhammad Tilal Department of Electrical Engineering CIIT Attock Campus The logo and is the property of CIIT, Pakistan and subject to the copyrights and ownership of. Duplication & distribution of this work for Non Academic or Commercial use without prior permission is prohibited. The theme of this presentation is an inspiration from the one used in S2 Department of Chalmers University of Technology, Gothenburg, Sweden. Previous Lecture BJT Small Signal Analysis Small Signal Analysis of CE Emitter Bias Configuration. Small Signal Analysis of Emitter Follower Configuration. Small Signal Analysis of Common Base Configuration. 9/29/2014 Muhammad Tilal 2 1
2 Session Overview Topic Concepts Recommended Reading Keywords FET Small Signal Analysis Trans-conductance, Input Impedance, Output Impedance, FET AC Equivalent Circuit, JFET Fixed Bias Configuration Small Signal Analysis. Sections9.1, 9.2 & 9.3of [1] Emitter Follower, Common Base, Small Signal, BJT, Fixed Bias. 9/29/2014 Muhammad Tilal 3 FET Amplifiers Good Voltage Gain. High Input Impedance. Less power consumption. Work with wide range of frequencies. Small size and weight. Trans- conductance factor (gm) is the counterpart of amplification factor(β). Current gain: Undefined(Why) Common Source Most popular. Characterized by inverted amplified signal. Common Drain. Characterized by unity gain and no inversion. Common Gate. Characterized by gain with no inversion. Input Impedance is very high. Output Impedance is comparable to that of BJT. 9/29/2014 Muhammad Tilal 4 2
3 FET is a voltage controlled device, so the relationship between the VGSandIDisdefinedas gm = ΔID/ΔVGS gm=m = Δy/Δx= ΔID/ΔVGS ΔID=gmΔVGS where ID= controlled current. VGS= Controlling Voltage. gm is called trans- conductance, where the term trans is used to describe the relationship between input and output. 9/29/2014 Muhammad Tilal 5 Example 9.1 (Boylestad): Determine the magnitude of gm for a JFET with IDSS= 8mA and VP= -4V at following DC bias points (a) VGS=-0.5V. (b) VGS=-1.5V. (c) VGS=-2.5V. 9/29/2014 Muhammad Tilal 6 3
4 Mathematical Definition of gm: The derivative of a function at a point is equal to the slope of the tangent line drawn at that point. gm=(2idss/ VP )[1-VGS/VP] gm0=(2idss/ VP ) gm= gm0[1-vgs/vp] 9/29/2014 Muhammad Tilal 7 Example 9.2 (Boylestad): For thejfetofexample9.1, Findthemax.valueofgm. Find the value of gm at each operating point of Example 9.1 using mathematical formula and compare with the graphical results. 9/29/2014 Muhammad Tilal 8 4
5 gmvsvgs 9/29/2014 Muhammad Tilal 9 Input Impedance Zi(FET)= Ω. Typical Values JFET= 1000MΩ MOSFET=10 12 to10 15 Ω Output Impedance Zo(FET)= rd= 1/yos. rd =(ΔVDS/ΔID) VGS= constant. 9/29/2014 Muhammad Tilal 10 5
6 Example 9.5(Boylestad): Determine the output Impedance for the given FET curves for VGS=0V(atVDS=8V). VGS=-2V(atVDS=8V). 9/29/2014 Muhammad Tilal 11 FET AC Equivalent Circuit Idrepresented as a voltage controlled current source gmvgs with 180 degrees phase shift. Input impedance is represented as an open circuit at input terminals. Output impedance is represented by rd from drain to source. 9/29/2014 Muhammad Tilal 12 6
7 Example 9.6 (Boylestad): Sketch FET ac Equivalent Model for yfs= 3.8mS and yos= 20µS. 9/29/2014 Muhammad Tilal 13 JFET Fixed Bias Configuration 9/29/2014 Muhammad Tilal 14 7
8 JFET Fixed Bias Configuration 9/29/2014 Muhammad Tilal 15 JFET Fixed Bias Configuration Example 9.7 (Boylestad): The given fixed bias configuration has an operating point defined by VGSQ=-2V, IDQ=5.625mA and IDSS=10mAandVp=-8V. Assume yos= 40µS, determine gm Zi Zo Av Av (Ignoring the effects of rd) 9/29/2014 Muhammad Tilal 16 8
9 References [1] 8 th Edition, Pearson Education Inc, ISBN: /29/2014 Muhammad Tilal 17 9
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