LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode

Transcription

1 AIKW5N6CT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode Features: C AutomotiveAECQ11qualified DesignedforDC/ACconvertersforAutomotiveApplication VerylowVCE(sat)1.5V(typ.) Maximumjunctiontemperature175 C Dynamicallystresstested Shortcircuitwithstandtime5µs 1%shortcircuittested 1%ofthepartsaredynamicallytested PositivetemperaturecoefficientinVCE(sat) LowEMI LowgatechargeQG Greenpackage Verysoft,fastrecoveryantiparallelEmitterControlledHE diode TRENCHSTOP TM andfieldstoptechnologyfor6v applicationsoffers: verytightparameterdistribution highruggedness,temperaturestablebehavior veryhighswitchingspeed G E Applications: Maininverter Climatecompressor PTCheater Motordrives G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package AIKW5N6CT 6V 5A 1.5V 175 C AK5DCT PGTO2473 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V

2 AIKW5N6CT TableofContents Description Table of Contents Maximum Ratings Thermal Resistance Electrical Characteristics Electrical Characteristics Diagrams Package Drawing Testing Conditions Revision History Disclaimer Datasheet 2 V

3 AIKW5N6CT MaximumRatings Parameter Symbol Value Unit Collectoremittervoltage,Tvj 25 C VCE 6 V DCcollectorcurrent,limitedbyTvjmax TC=25 Cvaluelimitedbybondwire TC=1 C IC Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 15. A Turn off safe operating area VCE 6V,Tvj 175 C,tp=1µs Diodeforwardcurrent,limitedbyTvjmax TC=25 Cvaluelimitedbybondwire TC=1 C 15. A IF Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 15. A Gateemitter voltage VGE ±2 V Short circuit withstand time VGE=15.V,VCC 4V Allowed number of short circuits < 1 Time between short circuits: 1.s Tvj=15 C PowerdissipationTC=25 C Ptot 333. W Operating junction temperature Tvj C Storage temperature Tstg C Soldering temperature, 1) wave soldering 1.6mm (.63in.) from case for 1s 26 Mounting torque, M3 screw Maximum of mounting processes: 3 tsc 5 A A µs C M.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, 2) junction case Diode thermal resistance, 2) junction case Thermal resistance junction ambient Rth(jc).45 K/W Rth(jc).8 K/W Rth(ja) 4 K/W 1) Package not recommended for surface mount application 2) Thermal resistance of thermal grease Rth(cs) (case to heat sink) of more than.1k/w not included. Datasheet 3 V

4 AIKW5N6CT ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.2mA 6 V Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=15.V,IC=5.A Tvj=25 C Tvj=175 C VGE=V,IF=5.A Tvj=25 C Tvj=175 C Gateemitter threshold voltage VGE(th) IC=.8mA,VCE=VGE V Zero gate voltage collector current ICES VCE=6V,VGE=V Tvj=25 C Tvj=175 C Gateemitter leakage current IGES VCE=V,VGE=2V 1 na Transconductance gfs VCE=2V,IC=5.A 31. S V V µa ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 314 Output capacitance Coes VCE=25V,VGE=V,f=1MHz 2 Reverse transfer capacitance Cres 93 Gate charge Short circuit collector current Max. 1 short circuits Time between short circuits: 1.s QG IC(SC) VCC=48V,IC=2.A, VGE=15V VGE=15.V,VCC 4V, tsc 5µs Tvj=15 C pf 31. nc 458 A SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=25 C Turnon delay time td(on) Tvj=25 C, 26 ns Rise time VCC=4V,IC=5.A, tr 29 ns VGE=./15.V, Turnoff delay time td(off) RG(on)=7.Ω,RG(off)=7.Ω, 299 ns Fall time Lσ=13nH,Cσ=39pF tf 29 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 1.2 mj Turnoff energy Eoff diode reverse recovery. 1.4 mj Total switching energy Ets 2.6 mj Datasheet 4 V

5 AIKW5N6CT DiodeCharacteristic,atTvj=25 C Diode reverse recovery time trr Tvj=25 C, 143 ns Diode reverse recovery charge VR=4V, Qrr 1.8 µc IF=5.A, Diode peak reverse recovery current Irrm dif/dt=128a/µs 27.7 A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 671 A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=175 C Turnon delay time td(on) Tvj=175 C, 27 ns Rise time VCC=4V,IC=5.A, tr 33 ns VGE=./15.V, Turnoff delay time td(off) RG(on)=7.Ω,RG(off)=7.Ω, 341 ns Fall time Lσ=13nH,Cσ=39pF tf 55 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 1.8 mj Turnoff energy Eoff diode reverse recovery mj Total switching energy Ets 3.65 mj DiodeCharacteristic,atTvj=175 C Diode reverse recovery time trr Tvj=175 C, 25 ns Diode reverse recovery charge VR=4V, Qrr 4.3 µc IF=5.A, Diode peak reverse recovery current Irrm dif/dt=128a/µs 4.7 A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 449 A/µs Datasheet 5 V

6 AIKW5N6CT Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] TC,CASETEMPERATURE[ C] Figure 1. Powerdissipationasafunctionofcase temperature (Tj 175 C) TC,CASETEMPERATURE[ C] Figure 2. Collectorcurrentasafunctionofcase temperature (VGE 15V,Tj 175 C) 15 VGE=2V 15 VGE=2V V V IC,COLLECTORCURRENT[A] V 11V 9V 7V IC,COLLECTORCURRENT[A] V 11V 9V 7V VCE,COLLECTOREMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tj=25 C) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tj=175 C) Datasheet 6 V

7 AIKW5N6CT IC,COLLECTORCURRENT[A] Tvj = 25 C Tvj = 175 C VCE(sat),COLLECTOREMITTERSATURATION[V] IC = 25A IC = 5A IC = 1A VGE,GATEEMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=2V) Tj,JUNCTIONTEMPERATURE[ C] Figure 6. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1 1 td(off) tf td(on) tr td(off) tf td(on) tr t,switchingtimes[ns] 1 1 t,switchingtimes[ns] IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,tj=175 C,VCE=4V, VGE=/15V,RG=7Ω,Dynamictestcircuitin RG,GATERESISTOR[Ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,tj=175 C,VCE=4V, VGE=/15V,IC=5A,Dynamictestcircuitin Datasheet Figure E) 7 Figure E) V

8 AIKW5N6CT t,switchingtimes[ns] 1 1 td(off) tf td(on) tr VGE(th),GATEEMITTERTHRESHOLDVOLTAGE[V] typ. min. max Tj,JUNCTIONTEMPERATURE[ C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,vce=4v,vge=/15v, IC=5A,RG=7Ω,DynamictestcircuitinFigure E) Tj,JUNCTIONTEMPERATURE[ C] Figure 1. Gateemitterthresholdvoltageasafunction ofjunctiontemperature (IC=,8mA) 7 Eoff Eoff 9 Eon Ets 6 Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,tj=175 C,VCE=4V, VGE=/15V,RG=7Ω,Dynamictestcircuitin RG,GATERESISTOR[Ω] Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,tj=175 C,VCE=4V, VGE=/15V,IC=5A,Dynamictestcircuitin Datasheet Figure E) 8 Figure E) V

9 AIKW5N6CT 4. 6 Eoff Eoff 3.5 Eon Ets 5 Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Tj,JUNCTIONTEMPERATURE[ C] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,vce=4v,vge=/15v, IC=5A,RG=7Ω,Dynamictestcircuitin Figure E) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,tj=175 C,VGE=/15V, IC=5A,RG=7Ω,Dynamictestcircuitin Figure E) 2 18 VCC=12V VCC=48V Cies Coes Cres 16 1E+4 VGE,GATEEMITTERVOLTAGE[V] C,CAPACITANCE[pF] QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=5A) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collectoremittervoltage (VGE=V,f=1MHz) Datasheet 9 V

10 AIKW5N6CT 9 14 IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] tsc,shortcircuitwithstandtime[µs] VGE,GATEEMITTERVOLTAGE[V] Figure 17. Typicalshortcircuitcollectorcurrentasa functionofgateemittervoltage (VCE 4V,startatTj 15 C) VGE,GATEEMITTERVOLTAGE[V] Figure 18. Shortcircuitwithstandtimeasafunctionof gateemittervoltage (VCE=4V,startatTj=25 C,Tjmax 15 C) 1 1 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W].1.1 D = single pulse ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W].1.1 D = single pulse i: ri[k/w]: 7.E τi[s]: 4.5E5 1.E4 7.2E4 8.3E E6 1E5 1E tp,pulsewidth[s] Figure 19. IGBTtransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesd (D=tp/T) i: ri[k/w]: τi[s]: 4.8E5 6.4E4 7.3E E7 1E6 1E5 1E tp,pulsewidth[s] Figure 2. Diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesd (D=tp/T) Datasheet 1 V

11 AIKW5N6CT TRENCHSTOPTM Series 35 6 Tvj = 25 C, IF = 5A Tvj = 175 C, IF = 5A Tvj = 25 C, IF = 5A Tvj = 175 C, IF = 5A 5 Qrr, REVERSE RECOVERY CHARGE [µc] trr, REVERSE RECOVERY TIME [ns] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 21. Typical reverse recovery time as a function of diode current slope (VR=4V,Dynamic test circuit in Figure E) Figure 22. Typical reverse recovery charge as a function of diode current slope (VR=4V, Dynamic test circuit in Figure E) dif/dt, DIODE CURRENT SLOPE [A/µs] 2 Tvj = 25 C, IF = 5A Tvj = 175 C, IF = 5A Tvj = 25 C, IF = 5A Tvj = 175 C, IF = 5A dirr/dt, diode peak rate of fall of Irr [A/µs] Irr, REVERSE RECOVERY CURRENT [A] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 23. Typical reverse recovery current as a function of diode current slope (VR=4V, Dynamic test circuit in Figure E) Datasheet dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=4V, Dynamic test circuit in Figure E) 11 V

12 AIKW5N6CT TRENCHSTOPTM Series Tvj = 25 C Tvj = 175 C 135 IF = 25A IF = 5A IF = 1A VF, FORWARD VOLTAGE [V] IF, FORWARD CURRENT [A] VF, FORWARD VOLTAGE [V] Figure 25. Typical diode forward current as a function of forward voltage Datasheet Tj, JUNCTION TEMPERATURE [ C] Figure 26. Typical diode forward voltage as a function of junction temperature 12 V

13 AIKW5N6CT TRENCHSTOPTM Series Package Drawing PGTO2473 Datasheet 13 V

14 AIKW5N6CT TRENCHSTOPTM Series Testing Conditions VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a 1% VGE b t Qa IC(t) Qb di 9% IC 9% IC 1% IC 1% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. 1% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V

15 AIKW5N6CT TRENCHSTOPTM Series Revision History AIKW5N6CT Revision: 21729, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) Data sheet created Datasheet 15 V

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