KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package AIKW40N65DH5 650V 40A 1.66V 175 C AK40EDH5 PG-TO247-3

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1 HighspeedfastIGBTinTRENCHSTOP TM 5technologycopackedwith RAPIDfastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedH5technologyoffering: BestinClassefficiencyinhardswitchingandresonant topologies PlugandplayreplacementofpreviousgenerationIGBTs 65Vbreakdownvoltage LowgatechargeQG IGBTcopackedwithRAPIDfastandsoftantiparalleldiode Maximumjunctiontemperature75 C Dynamicallystresstested QualifiedaccordingtoAECQ Greenpackage(RoHScompliant) CompleteproductspectrumandPSpiceModels: G E Applications: Offboardcharger Onboardcharger DC/DCconverter PowerFactorcorrection 2 3 Packagepindefinition: Pingate Pin2&backsidecollector Pin3emitter KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package AIKW4N65DH5 65V 4A.66V 75 C AK4EDH5 PGTO2473 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.

2 TableofContents Description Table of Contents Maximum Ratings Thermal Resistance Electrical Characteristics Electrical Characteristics Diagrams Package Drawing Testing Conditions Revision History Disclaimer Datasheet 2 V2.

3 MaximumRatings Parameter Symbol Value Unit Collectoremittervoltage,Tvj 25 C VCE 65 V DCcollectorcurrent,limitedbyTvjmax TC=25 C TC= C IC Pulsedcollectorcurrent,tplimitedbyTvjmax ) ICpuls 2. A Turn off safe operating area VCE 65V,Tvj 75 C,tp=µs ) 2. A Diodeforwardcurrent,limitedbyTvjmax TC=25 C TC= C IF Diodepulsedcurrent,tplimitedbyTvjmax ) IFpuls 2. A Gateemitter voltage TransientGateemittervoltage(tp µs,d<.) PowerdissipationTC=25 C PowerdissipationTC= C VGE Ptot ±2 ± Operating junction temperature Tvj C Storage temperature Tstg C Soldering temperature, 2) wave soldering.6mm (.63in.) from case for s 26 Mounting torque, M3 screw Maximum of mounting processes: 3 A A V W C M.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance junction ambient Rth(jC).6 K/W Rth(jC).8 K/W Rth(ja) 4 K/W ) Defined by design. Not subject to production test. 2) Package not recommended for surface mount applications. Datasheet 3 V2.

4 ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.2mA 65 V Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=5.V,IC=4.A Tvj=25 C Tvj=25 C Tvj=75 C VGE=V,IF=2.A Tvj=25 C Tvj=25 C Tvj=75 C Gateemitter threshold voltage VGE(th) IC=.4mA,VCE=VGE V Zero gate voltage collector current ICES VCE=65V,VGE=V Tvj=25 C Tvj=75 C Gateemitter leakage current IGES VCE=V,VGE=2V na Transconductance gfs VCE=2V,IC=4.A 5. S V V µa ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 23 Output capacitance Coes VCE=25V,VGE=V,f=MHz 43 Reverse transfer capacitance Cres 9 Gate charge Internal emitter inductance measured 5mm (.97 in.) from case QG VCC=52V,IC=4.A, VGE=5V pf 92. nc LE 3. nh SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=25 C Turnon delay time td(on) Tvj=25 C, 2 ns Rise time VCC=4V,IC=2.A, tr ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 53 ns Fall time Lσ=3nH,Cσ=3pF tf ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.38 mj Turnoff energy Eoff diode reverse recovery..2 mj Total switching energy Ets.5 mj Datasheet 4 V2.

5 Turnon delay time td(on) Tvj=25 C, 8 ns Rise time VCC=4V,IC=5.A, tr 4 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 6 ns Fall time Lσ=3nH,Cσ=3pF tf 24 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.8 mj Turnoff energy Eoff diode reverse recovery..4 mj Total switching energy Ets.2 mj DiodeCharacteristic,atTvj=25 C Diode reverse recovery time trr Tvj=25 C, 75 ns Diode reverse recovery charge VR=4V, Qrr.52 µc IF=2.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 3. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 27 A/µs Diode reverse recovery time trr Tvj=25 C, 37 ns Diode reverse recovery charge VR=4V, Qrr.23 µc IF=5.A, Diode peak reverse recovery current Irrm dif/dt=a/µs.2 A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 55 A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=5 C Turnon delay time td(on) Tvj=5 C, 2 ns Rise time VCC=4V,IC=2.A, tr 2 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 9 ns Fall time Lσ=3nH,Cσ=3pF tf 4 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.57 mj Turnoff energy Eoff diode reverse recovery..22 mj Total switching energy Ets.79 mj Turnon delay time td(on) Tvj=5 C, 7 ns Rise time VCC=4V,IC=5.A, tr 4 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 223 ns Fall time Lσ=3nH,Cσ=3pF tf 25 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.6 mj Turnoff energy Eoff diode reverse recovery..6 mj Total switching energy Ets.22 mj Datasheet 5 V2.

6 DiodeCharacteristic,atTvj=5 C Diode reverse recovery time trr Tvj=5 C, 28 ns Diode reverse recovery charge VR=4V, Qrr.22 µc IF=2.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 8.6 A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 7 A/µs Diode reverse recovery time trr Tvj=5 C, 68 ns Diode reverse recovery charge VR=4V, Qrr.58 µc IF=5.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 5.5 A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 32 A/µs Datasheet 6 V2.

7 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] TC,CASETEMPERATURE[ C] Figure. Powerdissipationasafunctionofcase temperature (Tvj 75 C) TC,CASETEMPERATURE[ C] Figure 2. Collectorcurrentasafunctionofcase temperature (VGE 5V,Tvj 75 C) 2 2 VGE = 2V VGE = 2V IC,COLLECTORCURRENT[A] V 5V 2V V 8V 7V 6V IC,COLLECTORCURRENT[A] V 5V 2V V 8V 7V 6V 5V 5V VCE,COLLECTOREMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=25 C) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=5 C) Datasheet 7 V2.

8 IC,COLLECTORCURRENT[A] Tj = 25 C Tj = 5 C VCEsat,COLLECTOREMITTERSATURATION[V] IC = 5A IC = A IC = 2A IC = 4A VGE,GATEEMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=2V) Tvj,JUNCTIONTEMPERATURE[ C] Figure 6. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=5V) td(off) tf td(on) tr td(off) tf td(on) tr t,switchingtimes[ns] t,switchingtimes[ns] IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,tvj=5 C,VCE=4V, VGE=5/V,rG=5Ω,Dynamictestcircuitin rg,gateresistor[ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,tvj=5 C,VCE=4V, VGE=5/V,IC=2A,Dynamictestcircuitin Datasheet Figure E) 8 Figure E) V2.

9 t,switchingtimes[ns] td(off) tf td(on) tr VGE(th),GATEEMITTERTHRESHOLDVOLTAGE[V] typ. min. max Tvj,JUNCTIONTEMPERATURE[ C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,vce=4v,vge=5/v, IC=2A,rG=5Ω,DynamictestcircuitinFigure E) Tvj,JUNCTIONTEMPERATURE[ C] Figure. Gateemitterthresholdvoltageasafunction ofjunctiontemperature (IC=.4mA).6 Eoff Eoff 7 Eon Ets.4 Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] IC,COLLECTORCURRENT[A] Figure. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,tvj=5 C,VCE=4V, VGE=5/V,rG=5Ω,Dynamictestcircuitin rg,gateresistor[ω] Figure 2. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,tvj=5 C,VCE=4V, VGE=5/V,IC=2A,Dynamictestcircuitin Datasheet Figure E) 9 Figure E) V2.

10 .9. Eoff Eoff.8 Eon Ets.9 Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Tvj,JUNCTIONTEMPERATURE[ C] Figure 3. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,vce=4v,vge=5/v, IC=2A,rG=5Ω,Dynamictestcircuitin Figure E) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,tvj=5 C,VGE=5/V, IC=2A,rG=5Ω,Dynamictestcircuitin Figure E) 6 4 VCC=3V VCC=52V E+4 Cies Coes Cres VGE,GATEEMITTERVOLTAGE[V] C,CAPACITANCE[pF] QGE,GATECHARGE[nC] Figure 5. Typicalgatecharge (IC=4A) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 6. Typicalcapacitanceasafunctionof collectoremittervoltage (VGE=V,f=MHz) Datasheet V2.

11 AIKW4N65DH5 High speed switching series fifth generation Zth(jc), TRANSIENT THERMAL IMPEDANCE [K/W] Zth(jc), TRANSIENT THERMAL IMPEDANCE [K/W] D = single pulse. D = single pulse. i: ri[k/w]: τi[s]: 7.3E5 7.E E6 E5 E4... i: 2 3 ri[k/w]: τi[s]: 3.4E4 4.7E E7 E6 tp, PULSE WIDTH [s]...4 Tj = 25 C, IF = 2A Tj = 5 C, IF = 2A.3 Qrr, REVERSE RECOVERY CHARGE [µc] 5 trr, REVERSE RECOVERY TIME [ns]. Figure 8. Diode transient thermal impedance as a function of pulse width (D=tp/T) Tj = 25 C, IF = 2A Tj = 5 C, IF = 2A dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 9. Typical reverse recovery time as a function of diode current slope (VR=4V) Datasheet E4 tp, PULSE WIDTH [s] Figure 7. IGBT transient thermal impedance (D=tp/T) 6 5 E dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 2. Typical reverse recovery charge as a function of diode current slope (VR=4V) V 2.

12 AIKW4N65DH5 High speed switching series fifth generation 22 Tj = 25 C, IF = 2A Tj = 5 C, IF = 2A 2 Tj = 25 C, IF = 2A Tj = 5 C, IF = 2A dirr/dt, DIODE PEAK RATE OF FALL OF Irr [A/µs] Irr, REVERSE RECOVERY CURRENT [A] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 2. Typical reverse recovery current as a function of diode current slope (VR=4V) Tj = 25 C Tj = 5 C IF = A IF = 2A IF = 4A 2. VF, FORWARD VOLTAGE [V] 5 IF, FORWARD CURRENT [A] 9 Figure 22. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=4V) dif/dt, DIODE CURRENT SLOPE [A/µs] VF, FORWARD VOLTAGE [V] Figure 23. Typical diode forward current as a function of forward voltage Datasheet Tvj, JUNCTION TEMPERATURE [ C] Figure 24. Typical diode forward voltage as a function of junction temperature 2 V 2.

13 AIKW4N65DH5 High speed switching series fifth generation Package Drawing PGTO2473 Datasheet 3 V 2.

14 AIKW4N65DH5 High speed switching series fifth generation Testing Conditions VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a % VGE b t Qa IC(t) Qb di 9% IC 9% IC % IC % IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. % VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t t on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 4 V 2.

15 AIKW4N65DH5 High speed switching series fifth generation Revision History AIKW4N65DH5 Revision:, Rev. 2. Previous Revision Revision Date Subjects (major changes since last revision) 2. Data sheet created Datasheet 5 V 2.

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