LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryanti-parallelemittercontrolleddiode

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1 IKQ12N6T LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode Features: C VerylowVCE(sat)1.5V(typ.) Maximumjunctiontemperature175 C Shortcircuitwithstandtime5µs TRENCHSTOP TM andfieldstoptechnologyfor6v applicationsoffers: verytightparameterdistribution highruggedness,temperaturestablebehavior highswitchingspeed PositivetemperaturecoefficientinVCE(sat) LowEMI LowgatechargeQG Increasedcurrentcapability Greenpackage Verysoft,fastrecoveryantiparallelEmitterControlledHE diode G E Applications: Generalpurposeinverters Uninterruptiblepowersupplies Motordrives Mediumtolowswitchingfrequencypowerconverters KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package IKQ12N6T 6V 12A 1.5V 175 C K12T6 PGTO Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V

2 IKQ12N6T TableofContents Description Table of Contents Maximum Ratings Thermal Resistance Electrical Characteristics Electrical Characteristics Diagrams Package Drawing Testing Conditions Revision History Disclaimer Datasheet 2 V

3 IKQ12N6T MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed8%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collectoremittervoltage,Tvj 25 C VCE 6 V DCcollectorcurrent,limitedbyTvjmax Tc=25 Cvaluelimitedbybondwire Tc=135 C IC Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 48. A Turn off safe operating area VCE 6V,Tvj 175 C,tp=1µs Diodeforwardcurrent,limitedbyTvjmax Tc=25 C Tc=124 C 48. A IF Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 48. A Gateemitter voltage VGE ±2 V Short circuit withstand time VGE=15.V,VCC 4V Allowed number of short circuits < 1 Time between short circuits: 1.s Tvj=15 C PowerdissipationTc=25 C Ptot 833. W Operating junction temperature Tvj C Storage temperature Tstg C Soldering temperature, 1) wave soldering 1.6mm (.63in.) from case for 1s 26 tsc 5 A A µs C ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, 2) junction case Diode thermal resistance, 2) junction case Thermal resistance junction ambient Rth(jc).18 K/W Rth(jc).3 K/W Rth(ja) 4 K/W 1) Package not recommended for surface mount application 2) Thermal resistance of thermal grease Rth(cs) (case to heat sink) of more than.1k/w not included. Datasheet 3 V

4 IKQ12N6T ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.2mA 6 V Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=15.V,IC=12.A Tvj=25 C Tvj=175 C VGE=V,IF=12.A Tvj=25 C Tvj=175 C Gateemitter threshold voltage VGE(th) IC=1.92mA,VCE=VGE V Zero gate voltage collector current ICES VCE=6V,VGE=V Tvj=25 C Tvj=175 C Gateemitter leakage current IGES VCE=V,VGE=2V 1 na Transconductance gfs VCE=2V,IC=12.A 75. S Integrated gate resistor rg none Ω V V µa ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 753 Output capacitance Coes VCE=25V,VGE=V,f=1MHz 446 Reverse transfer capacitance Cres 26 Gate charge Internal emitter inductance measured 5mm (.197 in.) from case Short circuit collector current Max. 1 short circuits Time between short circuits: 1.s QG VCC=48V,IC=12.A, VGE=15V pf 73. nc LE 13. nh IC(SC) VGE=15.V,VCC 4V, tsc 5µs Tvj=175 C 846 A SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=25 C Turnon delay time td(on) Tvj=25 C, 33 ns Rise time VCC=4V,IC=12.A, tr 43 ns VGE=./15.V, Turnoff delay time td(off) RG(on)=3.Ω,RG(off)=3.Ω, 31 ns Fall time Lσ=63nH,Cσ=31pF tf 33 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 4.1 mj Turnoff energy Eoff diode reverse recovery. 2.8 mj Total switching energy Ets 6.9 mj Datasheet 4 V

5 IKQ12N6T DiodeCharacteristic,atTvj=25 C Diode reverse recovery time trr Tvj=25 C, 28 ns Diode reverse recovery charge VR=4V, Qrr 3.5 µc IF=12.A, Diode peak reverse recovery current Irrm dif/dt=11a/µs 25. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 5 A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=175 C Turnon delay time td(on) Tvj=175 C, 33 ns Rise time VCC=4V,IC=12.A, tr 51 ns VGE=./15.V, Turnoff delay time td(off) RG(on)=3.Ω,RG(off)=3.Ω, 355 ns Fall time Lσ=63nH,Cσ=31pF tf 43 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 6.7 mj Turnoff energy Eoff diode reverse recovery. 4.1 mj Total switching energy Ets 1.8 mj DiodeCharacteristic,atTvj=175 C Diode reverse recovery time trr Tvj=175 C, 41 ns Diode reverse recovery charge VR=4V, Qrr 1.8 µc IF=12.A, Diode peak reverse recovery current Irrm dif/dt=1a/µs 45. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 52 A/µs Datasheet 5 V

6 IKQ12N6T IC,COLLECTORCURRENT[A] 1 1 not for linear use Ptot,POWERDISSIPATION[W] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 1. Safeoperatingarea (D=,TC=25 C,Tj 175 C,VGE=/15V, tp=1µs) TC,CASETEMPERATURE[ C] Figure 2. Powerdissipationasafunctionofcase temperature (Tj 175 C) VGE=2V V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] V 11V 9V 8V 7V 6V TC,CASETEMPERATURE[ C] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE 15V,Tj 175 C) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tj=25 C) Datasheet 6 V

7 IKQ12N6T VGE=2V 15V Tj=25 C Tj=175 C IC,COLLECTORCURRENT[A] V 11V 9V 8V 7V 6V IC,COLLECTORCURRENT[A] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=175 C) VGE,GATEEMITTERVOLTAGE[V] Figure 6. Typicaltransfercharacteristic (VCE=2V) VCE(sat),COLLECTOREMITTERSATURATION[A] IC=38A IC=75A IC=12A IC=15A t,switchingtimes[ns] 1 1 td(off) tf td(on) tr Tj,JUNCTIONTEMPERATURE[ C] Figure 7. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) IC,COLLECTORCURRENT[A] Figure 8. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,tj=175 C,VCE=4V, VGE=15/V,rG=3Ω,Dynamictestcircuitin Datasheet 7 Figure E) V

8 IKQ12N6T 1E+4 1 td(off) tf td(on) tr td(off) tf td(on) tr t,switchingtimes[ns] 1 1 t,switchingtimes[ns] rg,gateresistor[ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,tj=175 C,VCE=4V, VGE=15/V,IC=12A,Dynamictestcircuitin Figure E) Tj,JUNCTIONTEMPERATURE[ C] Figure 1. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,vce=4v,vge=15/v, IC=12A,rG=3Ω,Dynamictestcircuitin Figure E) VGE(th),GATEEMITTERTHRESHOLDVOLTAGE[V] typ. min. max. E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets Tj,JUNCTIONTEMPERATURE[ C] Figure 11. Gateemitterthresholdvoltageasafunction ofjunctiontemperature (IC=1,92mA) IC,COLLECTORCURRENT[A] Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,tj=175 C,VCE=4V, VGE=15/V,rG=3Ω,Dynamictestcircuitin Datasheet 8 Figure E) V

9 IKQ12N6T 4 16 Eoff Eoff 35 Eon Ets 14 Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] rg,gateresistor[ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,tj=175 C,VCE=4V, VGE=15/V,IC=12A,Dynamictestcircuitin Figure E) Tj,JUNCTIONTEMPERATURE[ C] Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,vce=4v,vge=15/v, IC=12A,rG=3Ω,Dynamictestcircuitin Figure E) Eoff Eon Ets V 48V E,SWITCHINGENERGYLOSSES[mJ] VGE,GATEEMITTERVOLTAGE[V] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,tj=175 C,VGE=15/V, IC=12A,RG=3Ω,Dynamictestcircuitin QGE,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=12A) Datasheet Figure E) 9 V

10 IKQ12N6T 16 Cies Coes C,CAPACITANCE[pF] 1E Cres IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 17. Typicalcapacitanceasafunctionof collectoremittervoltage (VGE=V,f=1MHz) VGE,GATEEMITTERVOLTAGE[V] Figure 18. Typicalshortcircuitcollectorcurrentasa functionofgateemittervoltage (VCE 4V,Tj 15 C) 12 tsc,shortcircuitwithstandtime[µs] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W].1.1 D= single pulse VGE,GATEEMITTERVOLTAGE[V] Figure 19. Shortcircuitwithstandtimeasafunctionof gateemittervoltage (VCE=4V,startatTj=25 C,Tjmax 15 C) i: ri[k/w]: E3 τi[s]: 2.1E4 1.6E E6 1E5 1E tp,pulsewidth[s] Figure 2. IGBTtransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesd (D=tp/T) Datasheet 1 V

11 IKQ12N6T TRENCHSTOPTM series trr, REVERSE RECOVERY TIME [ns] ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W] Tj=25 C, IF = 12A Tj=175 C, IF = 12A D= single pulse i: ri[k/w]: E3 τi[s]: 2.1E4 2.6E E6 1E5 1E tp, PULSE WIDTH [s] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 21. Diode transient thermal impedance as a function of pulse width for different duty cycles D (D=tp/T) Figure 22. Typical reverse recovery time as a function of diode current slope (VR=4V,Dynamic test circuit in Figure E) Irr, REVERSE RECOVERY CURRENT [A] Qrr, REVERSE RECOVERY CHARGE [µc] Tj=25 C, IF = 12A Tj=175 C, IF = 12A Tj=25 C, IF = 12A Tj=175 C, IF = 12A dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 23. Typical reverse recovery charge as a function of diode current slope (VR=4V, Dynamic test circuit in Figure E) Datasheet dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 24. Typical reverse recovery current as a function of diode current slope (VR=4V, Dynamic test circuit in Figure E) 11 V

12 IKQ12N6T TRENCHSTOPTM series 36 Tj=25 C, IF = 12A Tj=175 C, IF = 12A Tj=25 C Tj=175 C 3 IF, FORWARD CURRENT [A] dirr/dt, diode peak rate of fall of Irr [A/µs] dif/dt, DIODE CURRENT SLOPE [A/µs] VF, FORWARD VOLTAGE [V] Figure 25. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=4V, Dynamic test circuit in Figure E) Figure 26. Typical diode forward current as a function of forward voltage 4. IF=38A IF=75A IF=12A IF=15A 3.5 VF, FORWARD VOLTAGE [V] Tj, JUNCTION TEMPERATURE [ C] Figure 27. Typical diode forward voltage as a function of junction temperature Datasheet 12 V

13 IKQ12N6T TRENCHSTOPTM series Package Drawing PGTO DIM A A1 A2 b b1 b2 MIN MILLIMETERS MAX INCHES MIN MAX DOCUMENT NO. Z8B SCALE c D D1 D2 D3 E E1 E3 e N L L1 R Datasheet (BSC) 5.44 (BSC) mm EUROPEAN PROJECTION ISSUE DATE REVISION 1 V

14 IKQ12N6T TRENCHSTOPTM series Testing Conditions VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a 1% VGE b t Qa IC(t) Qb di 9% IC 9% IC 1% IC 1% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. 1% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V

15 IKQ12N6T TRENCHSTOPTM series Revision History IKQ12N6T Revision: , Rev. 2.3 Previous Revision Revision Date Subjects (major changes since last revision) Final data sheet Update of Transconductance gfs Minor change Fig. 2 and Fig. 21 Datasheet 15 V

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