PDP SWITCH. V DS min 250 V. V DS(Avalanche) typ. 300 V R DS(on) 10V 29 m T J max 175 C. IRFB4332PbF TO-220 Tube 50 IRFB4332PbF

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1 PDP SWITCH Feature Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications Low Q G for Fast Response High Repetitive Peak Current Capability for Reliable Operation Short Fall & Rise Times for Fast Switching 75 C Operating Junction Temperature for Improved Ruggedness Repetitive Avalanche Capability for Robustness and Reliability Key Parameters HEXFET Power MOSFET V DS min 25 V V DS(Avalanche) typ. 3 V R DS(on) V 29 m T J max 75 C D S D G TO-22AB G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity TO-22 Tube 5 Description This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 75 C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Absolute Maximum Ratings Symbol Parameter Max. Units V GS Gate-to-Source Voltage ± 3 V I T C = 25 C Continuous Drain Current, V V 6 I T C = C Continuous Drain Current, V V 42 I DM Pulsed Drain Current 23 I T C = C Repetitive Peak Current 2 P C = 25 C Maximum Power Dissipation 39 W P C = C Maximum Power Dissipation 2 W Linear Derating Factor 2.6 W/ C T J Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds (.6mm from case) 3 Mounting torque, 6-32 or M3 screw lbf in (.N m) Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case.38 R CS Case-to-Sink, Flat, Greased Surface.5 C/W R JA Junction-to-Ambient 62 Notes through are on page A

2 Electrical (unless otherwise specified) Notes: Repetitive rating; pulse width limited by max. junction temperature. starting, L =.39mH, R G = 25, I AS = 35A. Pulse width 3µs; duty cycle 2%. R is measured at T J of approximately 9 C. Half sine wave with duty cycle =.25, ton=µsec. Applicable to Sustain and Energy Recovery applications. Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 25 V V GS = V, I D = 25µA BV DSS / T J Breakdown Voltage Temp. Coefficient 7 mv/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance V GS = V, I D = 35A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25µA V GS(th) / T J Gate Threshold Voltage Temp. Coefficient -4 mv/ C I DSS Drain-to-Source Leakage Current 2 µa V DS =25 V, V GS = V. ma V DS = 25V,V GS = V,T J =5 C Gate-to-Source Forward Leakage V GS = 2V I GSS na Gate-to-Source Reverse Leakage - V GS = -2V gfs Forward Trans conductance S V DS = 25V, I D = 35A Q g Total Gate Charge 99 5 Q gd Gate-to-Drain Charge 35 nc V DD = 25V, I D = 35A, V GS = V t st Shoot Through Blocking Time ns V DD = 2V, V GS = 5V, R G = 4.7 E PULSE Energy per Pulse L = 22nH, C=.3µF, V 52 GS = 5V V DS = 2V, R G = 5., µj L = 22nH, C=.3µF, V 92 GS = 5V V DS = 2V, R G = 5., T J = C C iss Input Capacitance 586 V GS = V C oss Output Capacitance 53 V DS = 25V pf C rss Reverse Transfer Capacitance 3 ƒ =.MHz, C oss eff. Effective Output Capacitance 36 V GS = V, V DS = V to 2V Between lead, L D Internal Drain Inductance 4.5 6mm (.25in.) nh from package L S Internal Source Inductance 7.5 and center of die contact Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 23 mj E AR Repetitive Avalanche Energy 3 39 mj V DS (Avalanche) Repetitive Avalanche Voltage V I AS Avalanche Current 35 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I T C = 25 C Continuous Source Current MOSFET symbol 6 (Body Diode) showing the A Pulsed Source Current integral reverse I SM 23 (Body Diode) p-n junction diode. V SD Diode Forward Voltage.3 V,I S = 35A,V GS = V t rr Reverse Recovery Time 9 29 ns,i F = 35A, V DD = 5V Q rr Reverse Recovery Charge nc di/dt = A/µs

3 Energy per pulse (µj) Energy per pulse (µj) I D, Drain-to-Source Current ) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP 5V V 8.V 7.V 6.5V 6.V BOTTOM 5.5V VGS TOP 5V V 8.V 7.V 6.5V 6.V BOTTOM 5.5V 5.5V 5.5V 6µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 6µs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics T J = 75 C I D = 35A V GS = V V DS = 25V 6µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature 8 L = 22nH C =.3µF C 25 C 8 L = 22nH C = Variable C 25 C V DS, Drain-to -Source Voltage (V) Fig 5. Typical E PULSE vs. Drain-to-Source Voltage I D, Peak Drain Current (A) Fig 6. Typical E PULSE vs. Drain Current

4 I D, Drain Current (A) Energy per pulse (µj) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) 4 L = 22nH 2 C=.3µF C=.2µF C=.µF T J = 75 C Temperature ( C) Fig 7. Typical EPULSE vs. Temperature V GS = V V SD, Source-to-Drain Voltage (V) Fig 8. Typical Source-Drain Diode Forward Voltage 8 6 Ciss V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = 35A V DS = 2V V DS = 25V V DS = 5V 4 8 Coss 2 4 Crss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 9. Typical Capacitance vs.drain-to-source Voltage Fig. Typical Gate Charge vs.gate-to-source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) µsec µsec µsec T J, Junction Temperature ( C) Fig. Maximum Drain Current vs. Case Temperature. Tc = 25 C Tj = 75 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 2. Maximum Safe Operating Area

5 V GS(th) Gate threshold Voltage (V) Repetitive Peak Current (A) E AS, Single Pulse Avalanche Energy (mj) R DS (on), Drain-to -Source On Resistance ( ).4.3 I D = 35A 8 I D TOP 8.3A 3A BOTTOM 35A T J = 25 C V GS, Gate-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 3. On-Resistance Vs. Gate Voltage Fig 4. Maximum Avalanche Energy Vs. Temperature I D = 25µA ton= µs Duty cycle =.25 Half Sine Wave Square Pulse T J, Temperature ( C ) Case Temperature ( C) Fig 5. Threshold Voltage vs. Temperature Fig 6. Typical Repetitive peak Current vs. Case temperature D =.5..2 Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 J J E-6 E t, Rectangular Pulse Duration (sec) Ri ( C/W) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 7. Maximum Effective Transient Thermal Impedance, Junction-to-Case (sec) Ci= i Ri Ci= i Ri C

6 6 5 4 I F = 24A V R = 5V T J = 25 C I F = 35A V R = 5V T J = 25 C I RRM (A) 3 I RRM (A) di F /dt (A/µs) di F /dt (A/µs) Fig. 8 - Typical Recovery Current vs. dif/dt Fig. 9 - Typical Recovery Current vs. dif/dt 4 3 I F = 24A V R = 5V T J = 25 C 5 4 I F = 35A V R = 5V T J = 25 C Q RR (nc) 2 Q RR (nc) di F /dt (A/µs) di F /dt (A/µs) Fig. 2 - Typical Stored Charge vs. dif/dt Fig. 2 - Typical Stored Charge vs. dif/dt

7 Fig 8. Diode Reverse Recovery Test Circuit for HEXFET Power MOSFETs Fig 9a. Unclamped Inductive Test Circuit Fig 9b. Unclamped Inductive Waveforms Fig 2b. Gate Charge Waveform Fig 2a. Gate Charge Test Circuit

8 Fig 2a. tst and EPULSE Test Circuit Fig 2b. tst Test Waveforms Fig 2c. EPULSE Test Waveforms

9 TO-22AB Package Outline (Dimensions are shown in millimeters (inches)) TO-22AB Part Marking Information E X A M P L E : T H IS IS A N IR F LO T C O D E 789 ASSEM BLED O N W W 9, 2 IN T H E A S S E M B L Y L IN E "C " N o te : "P " in a s s e m b ly lin e p o s itio n indicates "Lead - Free" IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O DE PART NUM BER D A T E C O D E YEAR = 2 W EEK 9 LIN E C TO-22AB packages are not recommended for Surface Mount Application

10 Qualification Information Qualification Level Industrial (per JEDEC JESD47F) Moisture Sensitivity Level TO-22AB N/A RoHS Compliant Yes Applicable version of JEDEC standard at the time of product release. Revision History Date /24/26 Comments Changed datasheet with Infineon logo - all pages. Corrected Absolute Maximum table-storage Temperature range from -4C to -55C on page. Corrected Package Outline on page 8. Added disclaimer on last page. //28 Added typical Irr, Qrr curves (Fig 8 to Fig 2) on page 6. Trademarks of Infineon Technologies AG µhvic, µipm, µpfc, AU-ConvertIR, AURIX, C66, CanPAK, CIPOS, CIPURSE, CoolDP, CoolGaN, COOLiR, CoolMOS, CoolSET, CoolSiC, DAVE, DI-POL, DirectFET, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, GaNpowIR, HEXFET, HITFET, HybridPACK, imotion, IRAM, ISOFACE, IsoPACK, LEDrivIR, LITIX, MIPAQ, ModSTACK, my-d, NovalithIC, OPTIGA, OptiMOS, ORIGA, PowIRaudio, PowIRStage, PrimePACK, PrimeSTACK, PROFET, PRO-SIL, RASIC, REAL3, SmartLEWIS, SOLID FLASH, SPOC, StrongIRFET, SupIRBuck, TEMPFET, TRENCHSTOP, TriCore, UHVIC, XHP, XMC Trademarks updated November 25 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies AG 8726 Munich, Germany 26 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? erratum@infineon.com Document reference ifx IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( Please note that this product is not qualified according to the AEC Q or AEC Q documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 28--