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1 MOSFET 600VCoolMOSªP7PowerTransistor TheCoolMOS 7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowermosfets,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS P7seriesisthesuccessortotheCoolMOS P6series.It combinesthebenefitsofafastswitchingsjmosfetwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentesdcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler. PGTO220 tab Features Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness Significantreductionofswitchingandconductionlosses ExcellentESDrobustness>2kV(HBM)forallproducts BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowrds(on)*a(below1ohm*mm²) LargeportfoliowithgranularRDS(on)selectionqualifiedforavarietyof industrialandconsumergradeapplicationsaccordingtojedec(jstd20 andjesd22) Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Benefits Easeofuseandfastdesigninthroughlowringingtendencyandusage acrosspfcandpwmstages Simplifiedthermalmanagementduetolowswitchingandconduction losses Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kvesd protection Suitableforawidevarietyofapplicationsandpowerranges Applications PFC,hardswitchingPWMandresonantswitchingpowerstages.e.g.PC Silverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom&UPS Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj,max 650 V RDS(on),max 360 mω Qg.typ 13 nc ID,pulse 26 A 1.4 µj Body diode di/dt 900 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO R360P7 see Appendix A 1 Rev.2.2,

2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer Rev.2.2,

3 1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Continuous drain current 1) ID 9 6 A TC=25 C TC=0 C Pulsed drain current 2) ID,pulse 26 A TC=25 C Avalanche energy, single pulse EAS 27 mj ID=2.5A; VDD=50V; see table Avalanche energy, repetitive EAR 0.14 mj ID=2.5A; VDD=50V; see table Avalanche current, single pulse IAS 2.5 A MOSFET dv/dt ruggedness dv/dt 80 V/ns VDS= V Gate source voltage (static) VGS V static; Gate source voltage (dynamic) VGS V AC (f>1 Hz) Power dissipation Ptot 41 W TC=25 C Storage temperature Tstg C Operating junction temperature Tj C Mounting torque 60 Ncm M3 and M3.5 screws Continuous diode forward current IS 9 A TC=25 C Diode pulse current 2) IS,pulse 26 A TC=25 C Reverse diode dv/dt 3) dv/dt 50 V/ns VDS= V,ISD<=9A,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 900 A/µs VDS= V,ISD<=9A,Tj=25 C see table 8 Insulation withstand voltage VISO V Vrms,TC=25 C,t=1min 1) Limited by Tj max. Maximum Duty Cycle D = ) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical Rg 3 Rev.2.2,

4 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 3.04 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W Tsold 260 C 1.6mm (0.063 in.) from case for s 4 Rev.2.2,

5 3Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th V VDS=VGS,ID=0.14mA Zero gate voltage drain current IDSS 1 µa VDS=600,VGS=0V,Tj=25 C VDS=600,VGS=0V,Tj=150 C Gatesource leakage current IGSS 00 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) Ω VGS=V,ID=2.7A,Tj=25 C VGS=V,ID=2.7A,Tj=150 C Gate resistance RG 6.2 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 555 pf VGS=0V,VDS=400V,f=250kHz Output capacitance Coss pf VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) 18 pf VGS=0V,VDS= V Effective output capacitance, time related 2) Co(tr) 164 pf ID=constant,VGS=0V,VDS= V Turnon delay time td(on) 8 ns Rise time tr 7 ns Turnoff delay time td(off) 42 ns Fall time tf ns VDD=400V,VGS=13V,ID=2.7A, RG=Ω;seetable9 VDD=400V,VGS=13V,ID=2.7A, RG=Ω;seetable9 VDD=400V,VGS=13V,ID=2.7A, RG=Ω;seetable9 VDD=400V,VGS=13V,ID=2.7A, RG=Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 3 nc VDD=400V,ID=2.7A,VGS=0toV Gate to drain charge Qgd 4 nc VDD=400V,ID=2.7A,VGS=0toV Gate charge total Qg 13 nc VDD=400V,ID=2.7A,VGS=0toV Gate plateau voltage Vplateau 5.2 V VDD=400V,ID=2.7A,VGS=0toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 5 Rev.2.2,

6 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=2.7A,Tj=25 C Reverse recovery time trr 145 ns Reverse recovery charge Qrr 0.74 µc Peak reverse recovery current Irrm 11 A VR=400V,IF=1A,diF/dt=0A/µs; see table 8 VR=400V,IF=1A,diF/dt=0A/µs; see table 8 VR=400V,IF=1A,diF/dt=0A/µs; see table 8 6 Rev.2.2,

7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 50 Diagram2:Safeoperatingarea ms µs 1 µs ms Ptot[W] ID[A] 1 0 µs DC TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 2 Diagram4:Max.transientthermalimpedance µs ms 0 ID[A] ms µs 0 µs ZthJC[K/W] single pulse 3 DC VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.2,

8 Diagram5:Typ.outputcharacteristics 40 Diagram6:Typ.outputcharacteristics 25 ID[A] V V 8 V 7 V ID[A] V V 8 V 7 V 6 V 5.5 V 5.5 V 6 V 5 5 V 5 V 4.5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 4.5 V VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance V 6.5 V Diagram8:Drainsourceonstateresistance V RDS(on)[Ω] V 6 V 20 V RDS(on)[normalized] ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=2.7A;VGS=V 8 Rev.2.2,

9 Diagram9:Typ.transfercharacteristics C Diagram:Typ.gatecharge ID[A] C VGS[V] V 400 V VGS[V] ID=f(VGS);VDS=20V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=2.7Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 2 Diagram12:Avalancheenergy IF[A] EAS[mJ] C 25 C VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=2.5A;VDD=50V 9 Rev.2.2,

10 Diagram13:Drainsourcebreakdownvoltage 690 Diagram14:Typ.capacitances Ciss VBR(DSS)[V] C[pF] Coss Tj[ C] VBR(DSS)=f(Tj);ID=1mA 0 Crss VDS[V] C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) Rev.2.2,

11 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 90% V GS V GS % t d(on) t r t d(off) t f t on t off TableUnclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 11 Rev.2.2,

12 600V CoolMOSª P7 Power Transistor 6 Package Outlines Figure 1 Outline PGTO 2203, dimensions in mm/inches 12 Rev. 2.2,

13 600V CoolMOSª P7 Power Transistor 7 Appendix A Table 11 Related Links IFX CoolMOS P7 Webpage: IFX CoolMOS P7 application note: IFX CoolMOS P7 simulation model: IFX Design tools: 13 Rev. 2.2,

14 600V CoolMOSª P7 Power Transistor Revision History Revision: , Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Modified Safe Operating Area diagrams on page updated yaxis label diagram 8 Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CoolGaN, CoolMOS, CoolSET, CoolSiC, CORECONTROL, CROSSAVE, DAVE, DIPOL, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, Infineon, ISOFACE, IsoPACK, iwafer, MIPAQ, ModSTACK, myd, NovalithIC, OmniTune, OPTIGA, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PROFET, PROSIL, RASIC, REAL3, ReverSave, SatRIC, SIEGET, SIPMOS, SmartLEWIS, SOLID FLASH, SPOC, TEMPFET, thinq, TRENCHSTOP, TriCore. Trademarks updated August 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: Published by Infineon Technologies AG München, Germany 2017 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 14 Rev. 2.2,

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