ESD (Electrostatic discharge) sensitive device, observe handling precautions

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1 Product description The BFQ79 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and cost effective NPN silicon germanium technology. Not internally matched, the BFQ79 provides flexibility in high linearity applications. Features High rd order intercept point OIP of 4 5 V, 5 ma in 85 MHz and 65 MHz Class A application circuits High compression point OPdB of 7 5 V, 5 ma corresponding to 4% collector efficiency High power gain of 7 5V, 5 ma in 85 MHz Class A application circuit Exceptional ruggedness up to VSWR : at output High maximum RF input power PRFinmax of 8 dbm % test of proper die attach for reproducible thermal contact % DC and RF tested Applications As high linear pre-driver amplifier, driver amplifier or power amplifier in the RF transmit chain In Commercial / industrial wireless infrastructure ISM band wireless sensors Internet of Things Smart metering Automotive radio links Solid state Microwace ovens Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product validation Qualified for industrial applications according to the relevant tests of JEDEC47// Device Information Table Device Information Product Name / Ordering Code Package Pin Configuration Marking BFQ79 / BFQ79H67XTSA SOT89 = B = E = C R Preliminary Datasheet Please read the Important Notice and Warnings at the end of this document Revision.

2 Table of contents Table of contents Product description Features Applications Product validation Device Information Table of contents Absolute Maximum Ratings Recommended Operating Conditions Thermal Characteristics DC Parameter Table AC Parameter Tables Characteristic DC Diagrams Characteristic AC Diagrams Simulation Data Package Information SOT Revision History Trademarks Preliminary Datasheet Revision.

3 Absolute Maximum Ratings Absolute Maximum Ratings Table Absolute Maximum Ratings at T A = 5 C (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Collector emitter voltage V CE Min Max. V T A = 5 C T A = 4 C Collector base voltage V CB 8 V Instantaneous total base emitter reverse voltage V BE -. V DC + RF swing Instantaneous total collector current i C 6 ma DC + RF swing DC collector current ma DC base current I B ma RF input power P RFin 8 dbm In- and output matched Mismatch at output VSWR : In compression, over all phase angles ESD stress pulse V ESD -5 5 V HBM, all pins, acc. to ANSI / ESDA / JEDEC JS-- Dissipated power P DISS 5 mw T S.5 C ), regard derating curve in Figure. Junction temperature T J 5 C Operating case temperature T A -4 5 ) C Storage temperature T Stg C Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. T S is the soldering point temperature. T S is measured on the emitter lead at the soldering point of the pcb. At the same time regard T J,max. Preliminary Datasheet Revision.

4 Recommended Operating Conditions Recommended Operating Conditions This following table shows examples of recommended operating conditions. As long as maximum ratings are regarded operation outside these conditions is permitted, but increases failure rate and reduces lifetime. For further information refer to the quality report available on the BFQ79 internet page. Table Operating Mode Compressi on Recommended Operating Conditions Ambient Temperat ure ) T A [ C] Collector Current [ma] DC Power ) P DC [mw] RF Output Power ) P RFout [mw] (dbm) Efficiency 4) η [%] Dissipate d Power 5) P diss [mw] Thermal Resistanc e of pcb 6) R THSA [K/W] (7) Final stage 55 5 (4) High T A (7) Maximum () 4 5 T A Linear (7) Very Linear (7) 4 Junction Temperat ure 7) T J [ C] Is the operating case temperature respectively of the heatsink. P DC = V CE * with V CE = 5 V. RF power delivered to the load, P RFout = η * P DC. 4 Efficiency of the conversion from DC power to RF power, η = P RFout / P DC (collector efficiency). 5 P diss = P DC - P RFout. The RF output power P RFout delivered to the load reduces the power P diss to be dissipated by the device. This means a good output match is recommended. 6 R THSA is the thermal resistance of the pcb including heat sink, that is between the soldering point S and the ambient A. Regard the impact of R THSA on the junction temperature T J, see below. The thermal design of the pcb, respectively R THSA, has to be adjusted to the intended operating mode. 7 T J = T A + P diss * R THJA. R THJA = R THJS + R THSA. R THJA is the thermal resistance between the transistor junction J and the ambient A. R THJS is the combined thermal resistance of die and package, which is 5 K/W for the BFQ79,, see Chapter. Preliminary Datasheet 4 Revision.

5 Thermal Characteristics Thermal Characteristics Table 4 Thermal Resistance Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Junction - soldering point R thjs 5 K/W Figure Note: Absolute Maximum Power Dissipation P diss,max vs. T s In the horizontal part of the derating curve the maximum power dissipation is given by P diss,max V CE,max *,max. In this part the junction temperature T J is lower than T J,max. In the declining slope it is T J = T J,max, P diss,max has to be reduced according to the curve in order not to exceed T J,max. It is T J,max = T S + P diss,max * R THJS. Preliminary Datasheet 5 Revision.

6 4 4. DC Parameter Table Table 5 DC Characteristics at T A = 5 C Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Collector emitter breakdown voltage V (BR)CEO V = ma, open base Collector emitter leakage current ES. 4 ) na μa V CE = 8 V, V BE = V V CE = 8 V, V BE = V E-B short circuited Collector base leakage current BO 4 ) na V CB = 8 V, I E = Open emitter Emitter base leakage current I EBO 4 ) μa V EB =.5 V, = Open collector DC current gain h FE 6 8 V CE = 5 V, Pulse measured ) 4. AC Parameter Tables Table 6 General AC Characteristics at T A = 5 C Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Transition frequency f T GHz V CE = 5 V,, f =.5 GHz Collector base capacitance C CB. pf V CB = 5 V, V BE = V, f = MHz Emitter grounded Collector emitter capacitance C CE. pf V CE = 5 V, V BE = V, f = MHz Base grounded Emitter base capacitance C EB 9.4 pf V EB =.5 V, V CB = V, f = MHz Collector grounded Upper spec value limited by the cycle time of the % test. Pulse width is ms, duty cycle %. Regard that the current gain h FE depends on the junction temperature T J and T J amongst others from the thermal resistance R THSA of the pcb, see notes to Table. Hence the h FE specified in this datasheet must not be the same as in the application. It is highly recommended to apply circuit design techniques to make the collector current independent on the h FE production variation and temperature effects. Preliminary Datasheet 6 Revision.

7 Measurement setup for the AC characteristics shown in Table 7 to Table is a test fixture with Bias T s and tuners to adjust the source and load impedances in a 5 Ω system, T A = 5 C. Figure BFQ79 Testing Circuit Table 7 AC Characteristics, V CE = 5 V, f =.9 GHz Parameter Symbol Values Unit Note or Test Condition Power Gain Maximum power gain Transducer gain G ms S Min. Typ. Max. Minimum Noise Figure Minimum noise figure NF min.5 Linearity db compression point at output rd order intercept point at output Table 8 OPdB OIP AC Characteristics, V CE = 5 V, f =.8 GHz db db dbm Z S = Z Sopt = 7 ma Z L = Z Lopt Parameter Symbol Values Unit Note or Test Condition Power Gain Maximum power gain Transducer gain G ms S Min. Typ. Max Minimum Noise Figure Minimum noise figure NF min.6 Linearity db compression point at output rd order intercept point at output OPdB OIP db db dbm Z S = Z Sopt = 7 ma Z L = Z Lopt Preliminary Datasheet 7 Revision.

8 Table 9 AC Characteristics, V CE = 5 V, f =.6 GHz Parameter Symbol Values Unit Note or Test Condition Power Gain Maximum power gain Transducer gain G ms S Min. Typ. Max Minimum Noise Figure Minimum noise figure NF min. Linearity db compression point at output rd order intercept point at output Table OPdB OIP AC Characteristics, V CE = 5 V, f =.5 GHz db db dbm Z S = Z Sopt = 7 ma Z L = Z Lopt Parameter Symbol Values Unit Note or Test Condition Power Gain Maximum power gain Transducer gain G ms S Min. Typ. Max. Minimum Noise Figure Minimum noise figure NF min.4 Linearity db compression point at output rd order intercept point at output OPdB OIP db db dbm Z S = Z Sopt = 7 ma Z L = Z Lopt Preliminary Datasheet 8 Revision.

9 4. Characteristic DC Diagrams 5 [ma] mA 5.5mA 4.5mA.75mA ma.5ma.5ma.75ma ma V CE [V] Figure Note: Collector Current vs. V CE, I B = Parameter Regard absolute maximum ratings for, V CE and P diss h FE I c [ma] Figure 4 DC Current Gain h FE vs. at V CE = 5 V Preliminary Datasheet 9 Revision.

10 4 8 V CER [V] R BE [Ohm] Figure 5 Note: Collector Emitter Breakdown Voltage BV CER vs. Resistor R_B/GND The above figure shows the collector-emitter breakdown voltage BVCER with a resistor R_B/GND between base and emitter. Only for very high R_B/GND values ("open base") the breakdown voltage is as low as BVCEO (here 6.7 V). With decreasing R_B/GND values BVCER increases, e.g. at R_B/GND= kohm to BVCER= V. In the application the biasing base resistance together with block capacitors take over the function of R_B/GND and allows the RF voltage amplitude to swing up to voltages much higher than BVCEO, no clipping occurs. Due to this effect the transistor can be biased at VCE=5 V and still high RF output powers achieved, see the OPdB values reported in Chapter 4.. Preliminary Datasheet Revision.

11 4.4 Characteristic AC Diagrams 5 f T [GHz] 5.V 4.V 5.V.V 5.V.5V [ma] Figure 6 Transition Frequency f T vs., V CE = Parameter.6 CCB [pf]..8.v.4.v.v 4.V 5.V IC [ma] Figure 7 Collector Base Capacitance C CB vs. at f = MHz, V CB = Parameter Preliminary Datasheet Revision.

12 6 G ms 7 4 G [db] 8 5 G ma 9 6 S f [GHz] Figure 8 Gain Gms, Gma, IS I vs. f at V CE = 5 V, 6 G max [db] GHz.45GHz.9GHz.5GHz.8GHz.6GHz.5GHz [ma] Figure 9 Maximum Power Gain Gmax vs. at V CE = 5 V, f = Parameter Preliminary Datasheet Revision.

13 6 G max [db] GHz.45GHz.9GHz.5GHz.8GHz.6GHz.5GHz V [V] CE Figure Maximum Power Gain Gmax vs. V CE at, f = Parameter to 6 GHz ma 5 ma ma 5 ma Figure Output Reflection Coefficient S vs. f at V CE = 5 V, = Parameter Preliminary Datasheet Revision.

14 to 6 GHz ma.5 5 ma ma 5 ma Figure Input Reflection Coefficient S vs. f at V CE = 5 V, = Parameter to.5 GHz ma.5 5 ma ma 5 ma Figure Source Impedance Z Sopt for Minimum Noise Figure vs. f at V CE = 5V, = Parameter Preliminary Datasheet 4 Revision.

15 NF min [db] = 5 ma I = ma C I = 5 ma C = 7 ma f [GHz] Figure 4 Noise Figure NF min vs. f at V CE = 5 V, ZS = Z Sopt, = Parameter NF min [db] f =.5 GHz f =.6 GHz f =.8 GHz f =.5 GHz [ma] Figure 5 Noise Figure NF min vs. IC at V CE = 5 V, Z S = Z Sopt, f = Parameter Preliminary Datasheet 5 Revision.

16 NF 5 [db] f =.5 GHz f =.6 GHz f =.8 GHz f =.5 GHz [ma] Figure 6 Noise Figure NF 5 vs. IC at V CE = 5 V, Z S = 5 Ω, f = Parameter Figure 7 Load Pull Contour OPdB [dbm] at V CE = 5 V,, f =.9 GHz, Z I = Z opt Preliminary Datasheet 6 Revision.

17 Figure 8 Load Pull Contour OIP [dbm] at V CE = 5 V,, f =.9 GHz, Z I = Z opt Figure 9 Load Pull Contour Gain G [db] at V CE = 5 V,, f =.9 GHz, Z I = Z opt Preliminary Datasheet 7 Revision.

18 8 7 IPdB 8 Pout [dbm], Gain [db], PAE [%] Pout G PAE [ma] P in [dbm] Figure P out, Gain,, PAE vs. P in at V CE = 5 V, q = 55 ma, f =.9 GHz, Z I = Z opt IPdB Pout [dbm], Gain [db], PAE [%] 4 Pout G PAE [ma] P in [dbm] Figure P out, Gain,, PAE vs. P in at V CE = 5 V, q = 5 ma, f =.9 GHz, Z I = Z opt Preliminary Datasheet 8 Revision.

19 5 IPdB 8 Pout [dbm], Gain [db], PAE [%] 4 G PAE Pout [ma] P in [dbm] Figure P out, Gain,, PAE vs. P in at V CE = 5 V, q = 5 ma, f =.6 GHz, Z I = Z opt OIP [dbm] I [ma] C Figure Note: OIP vs. at V CE = 5 V, f =.9 GHz, Z L = Z Lopt The curves shown in this chapter have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves. T A = 5 C. Preliminary Datasheet 9 Revision.

20 Simulation Data 5 Simulation Data For the BFQ79 a large signal model exists. It is a VBIC model, which is an advancement of the SPICE Gummel- Poon model. It covers properties of a power transistor which are not known by the standard SPICE Gummel- Poon model, such as self-heating, quasi-saturation and voltage breakdown. The VBIC model can be used in standard simulation tools such as ADS and MWO as easily as the SPICE Gummel-Poon model. On the BFQ79 internet page the VBIC model is provided as a netlist. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. Besides the DC characteristics all S-parameters in magnitude and phase, noise figure (including optimum source impedance and equivalent noise resistance), intermodulation and compression have been extracted. On the BFQ79 internet page you also find the S-parameters (including noise parameters) for linear simulation. In any case please consult our website and download the latest versions before actually starting your design. Preliminary Datasheet Revision.

21 Package Information SOT89 6 Package Information SOT ± ±.5 B.5 ±.. MAX. ).6 ±. ) ±..5±. 4 ± ± M. B B x.5 ±. ) Ejector pin markings possible SOT89-PO V Figure 4 Package Outline (dimension in mm) SOT89-FP V Figure 5 Package Footprint (dimension in mm) Figure 6 Marking Example (marking BFQ79: R) Pin 4..6 SOT89-TP V Figure 7 Tape Dimensions (dimension in mm) Preliminary Datasheet Revision.

22 Revision History Revision History Major changes since previous revision Revision History Reference Description Revision History: 4-8-6, Revision. Preliminary datasheet based on measurements of engineering samples, replaces target datasheet.... Preliminary Datasheet Revision.

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