BFN18. Data Sheet. RF & Protection Devices. NPN Silicon High-Voltage Transistors. Revision 1.0,
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1 NPN Silicon High-Voltage Transistors Data Sheet Revision 1.0, RF & Protection Devices
2 Edition Published by Infineon Technologies AG Munich, Germany 20 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
3 Revision History Page or Item Subjects (major changes since previous revision) Revision 1.0, Converted to the new IFX Template. Trademarks of Infineon Technologies AG AURIX, BlueMoon, COMNEON, C166, CROSSAVE, CanPAK, CIPOS, CoolMOS, CoolSET, CORECONTROL, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, EUPEC, FCOS, HITFET, HybridPACK, ISOFACE, I²RF, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OmniTune, OptiMOS, ORIGA, PROFET, PRO-SIL, PRIMARION, PrimePACK, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SMARTi, SmartLEWIS, TEMPFET, thinq!, TriCore, TRENCHSTOP, X-GOLD, XMM, X-PMU, XPOSYS. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, PRIMECELL, REALVIEW, THUMB of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Sattelite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update Data Sheet 3 Revision 1.0,
4 Table of Contents Table of Contents Table of Contents List of Figures List of Tables Features Electrical Characteristics Characteristic DC Diagrams Package Information SOT Data Sheet 4 Revision 1.0,
5 NPN Silicon High-Voltage Transistors BFN18 1 Features Main features: Suitable for video output stages TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN19 (PNP) Pb-free (RoHS compliant) package 1) Qualified according AEC Q1 SOT89-3D 1) Pb-containing package may be available upon special request Product Name Package Pin Configuration Marking BFN18 SOT89 1 = B 2 = C 3 = E 4 = C DE Data Sheet 7 Revision 1.0,
6 Electrical Characteristics 2 Electrical Characteristics Table 1 Absolute Maximum Ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector-emitter voltage V CEO 300 V Collector-base voltage V CBO 300 V Emitter-base voltage V EBO V Collector current I C 200 ma Peak collector current I CM 00 ma Base current I B 0 ma Peak base current I BM 200 ma Total power dissipation- P tot 1. W T S = 120 C Junction temperature T j C Storage temperature T stg -6 C Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the device. Table 2 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction - soldering point 1) R thjs 20 K/W 1) For calculation of R thja please refer to Application Note Thermal Resistance. Data Sheet 6 Revision 1.0,
7 Electrical Characteristics Table 3 DC Characteristics at T A = 2 C, Unless Otherwise Specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector emitter breakdown voltage V (BR)CEO 300 V I C = 1 ma, I B = 0 Collector-base breakdown voltage V (BR)CBO 300 V I C = 0 µa, I E = 0 Emitter-base breakdown voltage V (BR)EBO V I E = 0 µa, I C = 0 Collector-base cutoff current I CBO 0.1 µa V CB = 20 V, I E = 0 20 V CB = 20 V, I E = 0, T A = C Emitter-base cutoff current I EBO 0 na V EB = V, I C = 0 DC current gain 1) h FE 2 I C = 1 ma, V CE = V 40 I C = ma, V CE = V 30 I C = 30 ma, V CE = V Collector-emitter saturation voltage 1) V CEsat 0. V I C = 20 ma, I B = 2 ma Base emitter saturation voltage 1) V BEsat 0.9 V I C = 20 ma, I B = 2 ma 1)Pulse test: t < 300 µs; D < 2% Table 4 AC Characteristics at T A = 2 C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency f T 70 MHz I C = 20 MHz, V CE = V, f = 20 MHz Collector base capacitance C Cb 1. pf V CB = 30 V, f = 1 MHz Data Sheet 7 Revision 1.0,
8 Characteristic DC Diagrams 3 Characteristic DC Diagrams DC Current Gain h FE = f(i C ), V CE = V Operating Range I C = f(v CEO ), T A = 2 C, D = 0 3 BFN 16/18 EHP008 3 BFN 16/18 EHP0080 h FE Ι C ma 2 μs μs 1ms 0 ms DC ma Collector Current I C = f(v BE ), V CE = V Ι C V Collector Cutoff Current I CBO = f(t A ), V CBO = 200 V V CEO ma 3 BFN 16/18 EHP0082 na 4 BFN 16/18 EHP0084 Ι C 2 Ι CBO 3 max typ V C V BE T A Data Sheet 8 Revision 1.0,
9 Characteristic DC Diagrams Transition Frequency f T = f(i C ), V CE = V 3 BFN 16/18 EHP0083 Collector Base Capacitance C cb = f(v CB ) Emitter Base Capacitance C eb = f(v EB ) 90 f T MHz Ccb, Ceb [pf] Ceb 20 1 ma Total Power Dissipation P tot = f(t S ) Ι C Vcb, Veb [V] Permissible Pulse Load P totmax / P totdc = f(t S ) Ccb 2 3 BFN 16/18 EHP P P tot max tot DC t p = D T t p T Ptot [W] D = Ts [ C] s 0 t p Data Sheet 9 Revision 1.0,
10 Package Information SOT89 4 Package Information SOT89 4. ± ±0.0 B 1. ± MAX. 1) 1.6 ±0.2 1) 1±0.1 2.±0.1 4 ± ± M 0.2 B B x3 0.3 ±0.1 1) Ejector pin markings possible SOT89-PO V02 Figure 1 Package Outline SOT89-FP V02 Figure 2 Package Foot Print GA BAW78D Type code S 6 Pin 1 200, June Date code (YM) Manufacturer SOT89-MA.vsd Figure 3 Marking Example Data Sheet Revision 1.0,
11 Package Information SOT Pin SOT89-TP V02 Figure 4 Tape Dimensions Packing Description Reel Ø180 mm = Pieces/Reel Reel Ø330 mm = Pieces/Reel Data Sheet 11 Revision 1.0,
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