BFR840L3RHESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.

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1 Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision., RF & Protection Devices

2 Edition Published by Infineon Technologies AG 876 Munich, Germany 3 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

3 BFR84L3RHESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor Revision History: 3-4-9, Revision. Page Subjects (major changes since last revision) This data sheet replaces the revision from -7-. P. 8 Item about AEC-Q added to feature list, minor changes. P. 7 Picture for marking description updated. Trademarks of Infineon Technologies AG AURIX, C66, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE ; PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update -- Data Sheet 3 Revision., 3-4-9

4 Table of Contents Table of Contents Table of Contents List of Figures List of Tables Product Brief Features Maximum Ratings Thermal Characteristics DC Characteristics General AC Characteristics Frequency Dependent AC Characteristics Characteristic DC Diagrams Characteristic AC Diagrams Simulation Data Package Information TSLP Data Sheet 4 Revision., 3-4-9

5 List of Figures List of Figures Figure 4- Total Power Dissipation P tot = f (T S ) Figure 5- BFR84L3RHESD Testing Circuit Figure 5- Collector Current vs. Collector Emitter Voltage I C = f (V CE ), I B = Parameter Figure 5-3 DC Current Gain h FE = f (I C ), V CE =.8 V Figure 5-4 Collector Current vs. Base Emitter Forward Voltage I C = f (V BE ), V CE =.8 V Figure 5-5 Base Current vs. Base Emitter Forward Voltage I B = f (V BE ), V CE =.8 V Figure 5-6 Base Current vs. Base Emitter Reverse Voltage I B = f (V EB ), V CE =.8 V Figure 5-7 Transition Frequency f T = f (I C ), f = GHz, V CE = Parameter Figure 5-8 3rd Order Intercept Point at output OIP3 = f (I C ), Z S = Z L = 5 Ω, V CE, f = Parameter Figure 5-9 3rd Order Intercept Point at output OIP3 [m] = f (I C, V CE ), Z S = Z L = 5 Ω, f = 5.5 GHz Figure 5- Compression Point at output OP [m] = f (I C, V CE ), Z S = Z L = 5 Ω, f = 5.5 GHz Figure 5- Collector Base Capacitance C CB = f (V CB ), f= MHz Figure 5- Gain G ma, G ms, IS I² = f (f), V CE =.8 V, I C = ma Figure 5-3 Maximum Power Gain G max = f (I C ), V CE =.8 V, f = Parameter in GHz Figure 5-4 Maximum Power Gain G max = f (V CE ), I C = ma, f= Parameter in GHz Figure 5-5 Input Reflection Coefficient S = f (f), V CE =.8 V, I C = 5 / / 5 ma Figure 5-6 Source Impedance for Minimum Noise Figure Z opt = f (f), V CE =.8 V, I C = 5 / / 5 ma Figure 5-7 Output Reflection Coefficient S = f (f), V CE =.8 V, I C = 5 / / 5 ma Figure 5-8 Noise Figure NF min = f (f), V CE =.8 V, I C = 5 / / 5 ma, Z S = Z opt Figure 5-9 Noise Figure NF min = f (I C ), V CE =.8 V, Z S = Z opt, f = Parameter in GHz Figure 5- Noise Figure NF 5 = f (I C ), V CE =.8 V, Z S = 5 Ω, f = Parameter in GHz Figure 7- Package Outline Figure 7- Package Footprint Figure 7-3 Marking Description (Marking BFR84L3RHESD: T8) Figure 7-4 Tape Dimensions Data Sheet 5 Revision., 3-4-9

6 List of Tables List of Tables Table 3- Maximum Ratings at T A = 5 C (unless otherwise specified) Table 4- Thermal Resistance Table 5- DC Characteristics at T A = 5 C Table 5- General AC Characteristics at T A = 5 C Table 5-3 AC Characteristics, V CE =.8 V, f =.45 GHz Table 5-4 AC Characteristics, V CE =.8 V, f =.9 GHz Table 5-5 AC Characteristics, V CE =.8 V, f =.5 GHz Table 5-6 AC Characteristics, V CE =.8 V, f =.9 GHz Table 5-7 AC Characteristics, V CE =.8 V, f =.4 GHz Table 5-8 AC Characteristics, V CE =.8 V, f = 3.5 GHz Table 5-9 AC Characteristics, V CE =.8 V, f = 5.5 GHz Table 5- AC Characteristics, V CE =.8 V, f = GHz Table 5- AC Characteristics, V CE =.8 V, f = GHz Data Sheet 6 Revision., 3-4-9

7 Product Brief Product Brief The BFR84L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz Wi-Fi applications. The device is based on Infineon s reliable high volume SiGe:C technology. The BFR84L3RHESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the Wi-Fi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in a very small thin leadless package, ideal for modules. Data Sheet 7 Revision., 3-4-9

8 Features Features Robust ultra low noise amplifier based on Infineon s reliable high volume SiGe:C bipolar technology Unique combination of high end RF performance and robustness: m maximum RF input power,.5 kv HBM ESD hardness Very high transition frequency f T = 75 GHz enables best in class noise performance at high frequencies: NF min =.65 at 5.5 GHz,. at GHz,.8 V, 5 ma High gain S = 9 at 5.5 GHz,.8 V, ma Ideal for low voltage applications e.g. V CC =. V and.8 V (.85 V, 3.3 V, 3.6 V requires corresponding collector resistor) Low power consumption, ideal for mobile applications Pb free (RoHS compliant) and halogen free very small thin leadless package (package height.3 mm, ideal for modules) Qualification report according to AEC-Q available TSLP-3-9 Applications As Low Noise Amplifier (LNA) in Mobile and fixed connectivity applications: WLAN 8., WiMAX and UWB Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass) and C-band LNB (st and nd stage LNA) Ku-band LNB front-end (nd stage or 3rd stage LNA and active mixer) Ka-band oscillators (DROs) Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package Pin Configuration Marking BFR84L3RHESD TSLP-3-9 = B = C 3 = E T8 Data Sheet 8 Revision., 3-4-9

9 Maximum Ratings 3 Maximum Ratings Table 3- Maximum Ratings at T A = 5 C (unless otherwise specified) Parameter Symbol Values Unit Note / Test Condition Min. Max. Collector emitter voltage V CEO.5. Collector emitter voltage ) Collector base voltage ) V CES.5. V CB.9.6 V T A = 5 C T A = -55 C Open base V T A = 5 C T A = -55 C E-B short circuited V T A = 5 C T A = -55 C Open emitter Base current I B -5 3 ma Collector current I C 35 ma RF input power P RFin m ESD stress pulse V ESD kv HBM, all pins, acc. to JESD-A4 Total power dissipation 3) P tot 75 mw T S C Junction temperature T J 5 C Storage temperature T Stg C ) V CES is identical to V CEO due to design ) V CBO is similar to V CEO due to design 3) T S is the soldering point temperature. T S is measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision., 3-4-9

10 Thermal Characteristics 4 Thermal Characteristics Table 4- Thermal Resistance Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction - soldering point ) R thjs 5 K/W ) For the definition of R thjs please refer to Application Note AN77 (Thermal Resistance Calculation) Ptot [mw] T S [ C] Figure 4- Total Power Dissipation P tot = f (T S ) Data Sheet Revision., 3-4-9

11 5 5. DC Characteristics Table 5- DC Characteristics at T A =5 C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector emitter breakdown voltage V (BR)CEO.5.6 V I C =ma, I B = Open base Collector emitter leakage current I CES 4 na V CE =.5V, V BE = E - B short circuited Collector base leakage current I CBO 4 na V CB =.5V, I E = Open emitter Emitter base leakage current I EBO μa V EB =.5V, I C = Open collector DC current gain h FE V CE =.8V, I C = ma Pulse measured 5. General AC Characteristics Table 5- General AC Characteristics at T A =5 C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency f T 75 GHz V CE =.8V, I C =5mA f =GHz Collector base capacitance C CB 5 ff V CB =.8V, V BE = f =MHz Emitter grounded Collector emitter capacitance C CE.34 pf V CE =.8V, V BE = f =MHz Base grounded Emitter base capacitance C EB.34 pf V EB =.4V, V CB = f =MHz Collector grounded Data Sheet Revision., 3-4-9

12 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T s in a 5 Ω system, T A = 5 C 3 VB VC GND In Bias -T RF- In RF- Out Bias -T Out TSLP-3-9 testing circuit Figure 5- BFR84L3RHESD Testing Circuit Table 5-3 AC Characteristics, V CE =.8 V, f =.45GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain Maximum power gain G ms 3 I C =ma Transducer gain S 7 I C =ma Minimum Noise Figure Minimum noise figure NF min.5 I C =5mA Associated gain G ass 7 I C =5mA Linearity m Z S = Z L =5 Ω compression point at output OP 4 I C =ma 3rd order intercept point at output OIP3 I C =ma Data Sheet Revision., 3-4-9

13 Table 5-4 AC Characteristics, V CE =.8 V, f =.9GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain Maximum power gain G ms 9 I C =ma Transducer gain S 6.5 I C =ma Minimum Noise Figure Minimum noise figure NF min.55 I C =5mA Associated gain G ass 6 I C =5mA Linearity m Z S = Z L =5 Ω compression point at output OP 4 I C =ma 3rd order intercept point at output OIP3 8.5 I C =ma Table 5-5 AC Characteristics, V CE =.8 V, f =.5GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain Maximum power gain G ms 7 I C =ma Transducer gain S 5.5 I C =ma Minimum Noise Figure Minimum noise figure NF min.55 I C =5mA Associated gain G ass 4.5 I C =5mA Linearity m Z S = Z L =5 Ω compression point at output OP 4 I C =ma 3rd order intercept point at output OIP3 7 I C =ma Table 5-6 AC Characteristics, V CE =.8 V, f =.9GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain Maximum power gain G ms 6.5 I C =ma Transducer gain S 5 I C =ma Minimum Noise Figure Minimum noise figure NF min.6 I C =5mA Associated gain G ass 4 I C =5mA Linearity m Z S = Z L =5 Ω compression point at output OP 4 I C =ma 3rd order intercept point at output OIP3 7 I C =ma Data Sheet 3 Revision., 3-4-9

14 Table 5-7 AC Characteristics, V CE =.8 V, f =.4GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain Maximum power gain G ms 5.5 I C =ma Transducer gain S 4 I C =ma Minimum Noise Figure Minimum noise figure NF min.6 I C =5mA Associated gain G ass.5 I C =5mA Linearity m Z S = Z L =5 Ω compression point at output OP 4 I C =ma 3rd order intercept point at output OIP3 7 I C =ma Table 5-8 AC Characteristics, V CE =.8 V, f =3.5GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain Maximum power gain G ms 3.5 I C =ma Transducer gain S I C =ma Minimum Noise Figure Minimum noise figure NF min.6 I C =5mA Associated gain G ass I C =5mA Linearity m Z S = Z L =5 Ω compression point at output OP 4 I C =ma 3rd order intercept point at output OIP3 8 I C =ma Table 5-9 AC Characteristics, V CE =.8 V, f = 5.5 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain Maximum power gain G ms I C =ma Transducer gain S 9 I C =ma Minimum Noise Figure Minimum noise figure NF min.65 I C =5mA Associated gain G ass 6.5 I C =5mA Linearity m Z S = Z L =5 Ω compression point at output OP 4 I C =ma 3rd order intercept point at output OIP3 8 I C =ma Data Sheet 4 Revision., 3-4-9

15 Table 5- AC Characteristics, V CE =.8 V, f =GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain Maximum power gain G ma 6 I C =ma Transducer gain S 3 I C =ma Minimum Noise Figure Minimum noise figure NF min.9 I C =5mA Associated gain G ass.5 I C =5mA Linearity m Z S = Z L =5 Ω compression point at output OP 3 I C =ma 3rd order intercept point at output OIP3 7 I C =ma Table 5- AC Characteristics, V CE =.8 V, f =GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain Maximum power gain G ma 3.5 I C =ma Transducer gain S I C =ma Minimum Noise Figure Minimum noise figure NF min. I C =5mA Associated gain G ass I C =5mA Linearity m Z S = Z L =5 Ω compression point at output OP 3 I C =ma 3rd order intercept point at output OIP3 7 I C =ma Note:. OIP3 value depends on the termination of all intermodulation frequency components. The termination used for this measurement is 5 Ω from. MHz to GHz. Data Sheet 5 Revision., 3-4-9

16 5.4 Characteristic DC Diagrams I C [ma] I B = 7µA I = 6µA B I = 5µA B I = 4µA B I B = 3µA I = µa B 4 I B = µa V [V] CE Figure 5- Collector Current vs. Collector Emitter Voltage I C = f (V CE ), I B = Parameter 3 h FE I C [ma] Figure 5-3 DC Current Gain h FE = f (I C ), V CE =.8 V Data Sheet 6 Revision., 3-4-9

17 I C [ma] V [V] BE Figure 5-4 Collector Current vs. Base Emitter Forward Voltage I C = f (V BE ), V CE =.8 V I B [ma] V [V] BE Figure 5-5 Base Current vs. Base Emitter Forward Voltage I B = f (V BE ), V CE =.8 V Data Sheet 7 Revision., 3-4-9

18 6 7 8 I B [A] V EB [V] Figure 5-6 Base Current vs. Base Emitter Reverse Voltage I B = f (V EB ), V CE =.8 V Data Sheet 8 Revision., 3-4-9

19 5.5 Characteristic AC Diagrams f T [GHz] V.8V.5V.V.5V I [ma] C Figure 5-7 Transition Frequency f T = f (I C ), f = GHz, V CE = Parameter 8 6 OIP3 [m] V, 4MHz.8V, 4MHz.5V, 55MHz.8V, 55MHz I C [ma] Figure 5-8 3rd Order Intercept Point at output OIP3 = f (I C ), Z S = Z L = 5 Ω, V CE, f = Parameter Data Sheet 9 Revision., 3-4-9

20 I C [ma] V CE [V] 7 8 Figure 5-9 3rd Order Intercept Point at output OIP3 [m] = f (I C, V CE ), Z S = Z L = 5 Ω, f = 5.5 GHz I C [ma] V [V] CE Figure 5- Compression Point at output OP [m] = f (I C, V CE ), Z S = Z L = 5 Ω, f = 5.5 GHz Data Sheet Revision., 3-4-9

21 .65.6 C CB [pf] V CB [V] Figure 5- Collector Base Capacitance C CB = f (V CB ), f= MHz G ms 4 G [] 6 S G ma f [GHz] Figure 5- Gain G ma, G ms, IS I² = f (f), V CE =.8 V, I C = ma Data Sheet Revision., 3-4-9

22 G max [] GHz.5GHz.9GHz.4GHz 3.5GHz 5.5GHz.GHz.GHz I C [ma] Figure 5-3 Maximum Power Gain G max = f (I C ), V CE =.8 V, f = Parameter in GHz G max [] GHz.5GHz.9GHz.4GHz 3.5GHz 5.5GHz.GHz.GHz V [V] CE Figure 5-4 Maximum Power Gain G max = f (V CE ), I C = ma, f= Parameter in GHz Data Sheet Revision., 3-4-9

23 to GHz mA ma 5mA.5 Figure 5-5 Input Reflection Coefficient S = f (f), V CE =.8 V, I C = 5 / / 5 ma mA ma 5mA.5 Figure 5-6 Source Impedance for Minimum Noise Figure Z opt = f (f), V CE =.8 V, I C = 5 / / 5 ma Data Sheet 3 Revision., 3-4-9

24 to GHz mA ma 5mA.5 Figure 5-7 Output Reflection Coefficient S = f (f), V CE =.8 V, I C = 5 / / 5 ma NF min [] I C = 5mA I C = ma I C = 5.mA f [GHz] Figure 5-8 Noise Figure NF min = f (f), V CE =.8 V, I C = 5 / / 5 ma, Z S = Z opt Data Sheet 4 Revision., 3-4-9

25 NF min []..8.6 f = GHz f = GHz.4 f = 5.5GHz f = 3.5GHz. f =.4GHz f =.9GHz 5 5 I C [ma] Figure 5-9 Noise Figure NF min = f (I C ), V CE =.8 V, Z S = Z opt, f = Parameter in GHz NF 5 [] f = GHz f = GHz f = 5.5GHz f = 3.5GHz f =.4GHz f =.9GHz 5 5 I [ma] C Figure 5- Noise Figure NF 5 = f (I C ), V CE =.8 V, Z S = 5 Ω, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T A =5 C. Data Sheet 5 Revision., 3-4-9

26 Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website. Please consult our website and download the latest versions before actually starting your design. You find the BFR84L3RHESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to GHz using typical devices. The BFR84L3RHESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 6 Revision., 3-4-9

27 Package Information TSLP Package Information TSLP-3-9 Top view Bottom view ).5 ±.35.6 ±.5 ).4 ±.35 ± ±.5 Pin marking.35 ±.5 ) x.5 ±.35 ) x.5 ±.35 ) Dimension applies to plated terminal TSLP-3-9-PO V Figure 7- Package Outline R R. Copper Solder mask Stencil apertures TSLP-3-9-FP V Figure 7- Package Footprint Pin marking Laser marking XY Type Code TSLP-3-9_marking V.vsd Figure 7-3 Marking Description (Marking BFR84L3RHESD: T8) Pin marking.8 TSLP-3-9-TP V Figure 7-4 Tape Dimensions Data Sheet 7 Revision., 3-4-9

28 Published by Infineon Technologies AG

29 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: BFR84L3RHESDE637XTSA BFR 84L3RHESD E637

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