Tire Pressure Monitoring Sensor
|
|
- Eric Dennis
- 6 years ago
- Views:
Transcription
1 TPMS Tire Pressure Monitoring Sensor SP37 Application Note Revision 1.0, Sense & Control
2 Edition Published by Infineon Technologies AG Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
3 Revision History Page or Item Subjects (major changes since previous revision) Revision 1.0, Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update
4 List of Tables Table of Contents 1 Introduction Measurement setup Measurement results... 7 List of Figures Figure 1 Manchester encoded signal. A: ideal signal, B: decreased duty cycle, C: increased duty cycle... 5 Figure 2 Measurement setup... 6 Figure 3 Circuit for generating edge delay. S1 in position I: falling edge delayed, S1 in position II: rising edge delayed Figure 4 Error rate versus duty cycle... 7
5 Introduction Introduction Apart from other timing parameters like baud rate the LF-telegram must comply with duty cycle requirements. For a periodic rectangular signal duty cycle is defined as ratio of high-time to signal period. However, the LF telegram is a non periodic, Manchester encoded binary signal. In fact both, the high time and low time, can be half the bit time or full bit time, depending on transmitted bit pattern (see curve A in Figure 1). Therefore for this kind of signal the duty cycle is changed by delaying all rising or all falling edges of the telegram by a constant delay time. As a result the relative change of the short high periods is greater than of the long high periods. Hence the duty cycle is defined as the ratio of the shortest high period and the bit time. Figure 1 A B C Manchester encoded signal. A: ideal signal, B: decreased duty cycle, C: increased duty cycle Figure 1 illustrates the definition of duty cycle. Case A is the ideal signal. The shortest high period is half the bit time. Hence the duty cycle is 50%. For case B all rising edges have been delayed by one quarter of the bit time. So the shortest high period is one quarter of the bit time. Therefore the duty cycle is 25%. Finally, in case C all falling edges have been delayed by one quarter of the bit time. The shortest high period is three quarter of a bit time. Hence in case C duty cycle is 75%.
6 Measurement setup Measurement setup In the test setup the telegrams were generated by PC software. A 125 khz carrier was modulated with this digital signal using the Agilent 33250A function generator. Since the used software could only provide Manchester encoded telegrams with a 50% duty cycle, a circuit for delaying either the rising edges or the falling edges was built between PC and function generator. Figure 2 shows the measurement setup and Figure 3 the circuit for generating the edge delay. Figure 2 TTL in Figure 3 RS232 Converter RS232 to Bitstream Measurement setup Edge Delay Circuit 4k7 I S II k SN74HC7002 SN74HC7002 SN74HC7002 2,2nF +5V Agilent 33250A function generator 6 5 D SET Q CLR Q I II SP37 Evaluation Board S1 TTL out Circuit for generating edge delay. S1 in position I: falling edge delayed, S1 in position II: rising edge delayed.
7 Measurement results Measurement results The error rate versus duty cycle was determined by counting the number of detected matching events (matching of sync and P0 pattern) per time when periodically transmitting wakeup telegrams. The result is shown in Figure 4. For safe operation the duty cycle should stay in the interval of 40% to 60%. Anyhow, it is recommended to design the LF transmitter for a duty cycle of 50%. Figure 4 Error rate versus duty cycle SP37-A5
8 w w w. i n f i n e o n. c o m Published by Infineon Technologies AG
LED Drivers for Low Power LEDs BCR205W. Data Sheet. Industrial and Multimarket. Ultra low dropout LED controller. Revision 2.
LED Drivers for Low Power LEDs BCR25W Data Sheet Revision 2.1, 211-4-27 Industrial and Multimarket Edition 211-4-27 Published by Infineon Technologies AG 81726 Munich, Germany 211 Infineon Technologies
More informationPower Management & Multimarket
Protection Device TVS (Transient Voltage Suppressor) ESD307-U1-02N Uni-directional, 10 V, 270 pf, 0603, RoHS and Halogen Free compliant ESD307-U1-02N Data Sheet Revision 1.0, 2014-05-30 Final Power Management
More informationPower Management & Multimarket
Protection Device TVS (Transient Voltage Suppressor) Bi-directional, 5.5 V, 6.5 pf, 5, RoHS and Halogen Free compliant Data Sheet Revision.4, 26-4-7 Final Power Management & Multimarket Edition 26-4-7
More informationRevision: Rev
Improvement of Harmonic Distortion Harmonic performance of RF FEM over VSWR and phase Application Note AN284 Revision: Rev. 1.0 RF and Protection Devices Edition Published by Infineon Technologies AG 81726
More informationBGA7L1BN6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1,
Silicon Germanium Low Noise Amplifier for LTE Data Sheet Revision 3.1, 2017-03-03 RF & Protection Devices Edition 2017-03-03 Published by Infineon Technologies AG 81726 Munich, Germany 2017 Infineon Technologies
More informationPower Management & Multimarket
TVS Diode TVS (Transient Voltage Suppressor) ESD23-B1-W21 Bi-directional, 5.5 V, 7 pf, 21, RoHS and Halogen Free compliant Quality Requirement Category: Standard ESD23-B1-W21 Data Sheet Revision 1., 216-4-22
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD102-U2-099EL 2-Line Ultra-low Capacitance ESD / Transient Protection Diodes ESD102-U2-099EL Data Sheet Revision 1.1, 2013-05-15 Final Power Management
More informationPower Management & Multimarket
Protection Device TVS (Transient Voltage Suppressor) ESD217-B1-02EL Bi-directional, +14 / -8 V, 9 pf, 0402, RoHS and Halogen Free compliant ESD217-B1-02EL Data Sheet Revision 1.1, 2014-11-11 Final Power
More informationPower Management & Multimarket
TVS Diode Transient Voltage Suppressor Diodes ESD203-B1-02 Series Bi-directional ESD / Transient / Surge Protection Diodes ESD203-B1-02ELS ESD203-B1-02EL Data Sheet Revision 1.3, 2013-12-19 Final Power
More informationPower Management & Multimarket
TVS Diode Transient Voltage Suppressor Diodes ESD3V3XU1BL Bi-directional Ultra Low Capacitance ESD / Transient Protection Diode ESD3V3XU1BL Data Sheet Revision 1.3, 213-9-11 Final Power Management & Multimarket
More informationRevision: Rev
Investigation of Phase Noise in Ku- Band DROs using BFP410 Phase noise performance vs. collector current Application Note AN235 Revision: Rev. 1.0 RF and Protection Devices Edition Published by Infineon
More informationBGA729N6. Data Sheet. RF & Protection Devices. Broadband Low Noise Amplifier for Portable and Mobile TV Applications. Revision 3.
Broadband Low Noise Amplifier for Portable and Mobile TV Applications Data Sheet Revision 3.0, 2015-11-18 RF & Protection Devices Edition 2015-11-18 Published by Infineon Technologies AG 81726 Munich,
More informationPower Management & Multimarket
LED Driver BCR402W Datasheet Revision 2.0, 2012-04-12 Power Management & Multimarket Edition 2012-04-12 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights
More informationPower Management & Multimarket
TVS Diode Transient Voltage Suppressor Diodes ESD3B12LRH Low Clamping & Low Capacitance ESD/Surge Protection Diode ESD3B12LRH Data Sheet Revision 1.2, 2131126 Final Power Management & Multimarket Revision
More informationBFN18. Data Sheet. RF & Protection Devices. NPN Silicon High-Voltage Transistors. Revision 1.0,
NPN Silicon High-Voltage Transistors Data Sheet Revision 1.0, 20--13 RF & Protection Devices Edition 20--13 Published by Infineon Technologies AG 81726 Munich, Germany 20 Infineon Technologies AG All Rights
More informationLED Drivers for High Power LEDs
LED Drivers for High Power LEDs ILD235 Data Sheet Revision 1., 211-8-17 Industrial and Multimarket Edition 211-8-17 Published by Infineon Technologies AG 81726 Munich, Germany 211 Infineon Technologies
More informationPower Management & Multimarket
LED Driver BCR 40U E6327 Datasheet Revision 2., 205-0-28 Power Management & Multimarket Edition 205-0-28 Published by Infineon Technologies AG 8726 Munich, Germany 205 Infineon Technologies AG All Rights
More informationPower Management & Multimarket
TVS Diode Transient Voltage Suppressor Diodes ESD200B1CSP0201 Low Clamping Voltage TVS Diode in a Thin 0201 Chip Scale Package ESD200B1CSP0201 Data Sheet Revision 1.0, 20130521 Final Power Management &
More informationBGM1143N9. Data Sheet. RF & Protection Devices. Front-End Module for Global Navigation Satellite Systems (GNSS) Revision 2.0, Preliminary
Front-End Module for Global Navigation Satellite Systems (GNSS) Data Sheet Revision 2.0, 2013-08-13 Preliminary RF & Protection Devices Edition 2013-08-13 Published by Infineon Technologies AG 81726 Munich,
More informationBGM1034N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,
Data Sheet Revision 3.0, 2011-07-18 RF & Protection Devices Edition 2011-07-18 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
More informationBGS22W2L10. Data Sheet. Power Management & Multimarket. DPDT (Dual-Pole / Double-Throw) Differential RF Switch. Revision October 12, 2012
DPDT (Dual-Pole / Double-Throw) Differential RF Switch Data Sheet Revision 1.4 - October 12, 2012 Power Management & Multimarket Edition October 12, 2012 Published by Infineon Technologies AG 81726 Munich,
More informationTVS Diodes ESD5V0L1B-02V. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes. Bi-directional Low Capacitance TVS Diode
TVS Diodes Transient Voltage Suppressor Diodes ESD5V0L1B-02V Bi-directional Low Capacitance TVS Diode ESD5V0L1B-02V Data Sheet Revision 1.0, 2010-12-16 Final Industrial and Multi-Market Edition 2010-12-16
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD101-B1-02 Series Bi-directional Ultra Low Capacitance TVS Diode ESD101-B1-02ELS ESD101-B1-02EL Data Sheet Revision 1.2, 2013-07-22 Final Power Management
More informationBGB719N7ESD. Data Sheet. RF & Protection Devices. Low Noise Amplifier MMIC for FM Radio Applications. Revision 1.1,
Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 1.1, 2012-10-30 RF & Protection Devices Edition 2012-10-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon
More informationRevision: Rev
BFP74ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Application Note AN295 Revision: Rev. 1. RF and Protection Devices Edition Published by Infineon Technologies AG 81726 Munich, Germany 213
More informationBGM1043N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,
Data Sheet Revision 3.0, 2012-06-20 RF & Protection Devices Edition 2012-06-20 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
More informationRevision: Rev
ESD205-B1, ESD206-B1 and ESD207-B1 Diodes General Purpose and Audio ESD Protection with Infineon Ultra -Low Dynamic Resistance TVS Diodes Application Note AN277 Revision: Rev. 1.2 RF and Protection Devices
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD102-U1-02ELS Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD102-U1-02ELS Data Sheet Revision 1.0, 2013-02-04 Final Power Management
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02 Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Data Sheet Revision 1.2, 2013-07-22 Final Power Management
More informationPower Management & Multimarket
TVS Diode Transient Voltage Suppressor Diodes ESD5V3L1B Series Bi-directional Low Capacitance ESD / Transient Protection Diode ESD5V3L1B-02LRH ESD5V3L1B-02LS Data Sheet Revision 1.1, 2012-10-15 Final Power
More informationPower Management & Multimarket
LED Driver BCR 42U E6327 / BCR 421U E6327 Datasheet Revision 2.1, 215128 Power Management & Multimarket Edition 215128 Published by Infineon Technologies AG 81726 Munich, Germany 215 Infineon Technologies
More informationBGA924N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) Data Sheet Revision 3.0, 2014-01-24 RF & Protection Devices Edition 2014-01-24 Published by Infineon Technologies AG
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD112-B1-02 Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD112-B1-02ELS ESD112-B1-02EL Data Sheet Rev. 1.3, 2013-11-27 Final
More informationPower Management & Multimarket
TVS Diode Transient Voltage Suppressor Diodes ESD108-B1-CSP0201 Ultra Low Capacitance TVS Diode in a Thin 0201 Chip Scale Package ESD108-B1-CSP0201 Data Sheet Revision 1.3, 2015-01-19 Final Power Management
More informationBGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in ultra small package with 0.77mm 2 footprint. Revision 1.
Wideband RF SPDT Switch in ultra small package with 0.77mm 2 footprint Data Sheet Revision 1.0, 2013-10-18 Power Management & Multimarket Edition October 18, 2013 Published by Infineon Technologies AG
More informationBGSF110GN26. Preliminary Datasheet. RF & Protection Devices
with integrated GPIO controller, 2 GSM-TX and 8 TRX Ports for multi-mode GSM/EDGE, WCDMA or LTE applications Preliminary Datasheet Rev. 1.3, 2013-03-29 RF & Protection Devices Edition 2013-03-29 Published
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02 Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Data Sheet Revision 1.3, 2014-06-12 Final Power Management
More informationLED Drivers for High Power LEDs
LED Drivers for High Power LEDs ILD435 Data Sheet Revision 2., 211-8-17 Industrial and Multimarket Edition 211-8-17 Published by Infineon Technologies AG 81726 Munich, Germany 211 Infineon Technologies
More informationBGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in small package with 0.77mm 2 footprint. Revision 2.
Wideband RF SPDT Switch in small package with 0.77mm 2 footprint Data Sheet Revision 2.3, 2016-09-07 Power Management & Multimarket Edition September 7, 2016 Published by Infineon Technologies AG 81726
More informationBFP450. Datasheet. RF & Protection Devices. Linear Low Noise Silicon Bipolar RF Transistor. Revision 1.2,
Linear Low Noise Silicon Bipolar RF Transistor Datasheet Revision 1.2, 2013-07-29 RF & Protection Devices Edition 2013-07-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes BGF120A Dual Channel UltraLow Capacitance ESD Diode Datasheet Rev. 1.4, 20120917 Final Power Management & Multimarket Edition 20120917 Published by Infineon
More informationBGB717L7ESD. Data Sheet. RF & Protection Devices. SiGe:C Low Noise Amplifier MMIC for FM Radio Applications. Revision 3.
SiGe:C Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 3.3, 2010-06-24 RF & Protection Devices Edition 2010-06-24 Published by Infineon Technologies AG 81726 Munich, Germany 2010
More informationRevision: Rev
IMD Performance of BGA925L6 with Different Application Circuits under Specific Test Conditions Application Note AN272 Revision: Rev. 1.0 RF and Protection Devices Edition 2011-09-16 Published by Infineon
More informationHigh Precision Hall Effect Switch for Consumer Applications
High Precision Hall Effect Switch for Consumer Applications Hall Effect Switch TLV4964-5T TLV4964-5TA TLV4964-5TB TLV4964-5T Data Sheet Revision 1.0, 2015-05-18 Sense & Control Table of Contents 1 Product
More informationBFP720F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-25 RF & Protection Devices Edition 2012-10-25 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon
More informationBFP650. Data Sheet. RF & Protection Devices. High Linearity Silicon Germanium Bipolar RF Transistor. Revision 1.1,
High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon
More informationPower Management & Multimarket
SP5T Antenna Switch Data Sheet Revision 2.1, 2013-01-21 Power Management & Multimarket Edition 2013-01-21 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights
More informationBGA7L1N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1 (Min/Max),
Silicon Germanium Low Noise Amplifier for LTE Data Sheet Revision 3.1 (Min/Max), 2014-02-11 RF & Protection Devices Edition 2014-02-11 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon
More informationBFP760. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 213-8- RF & Protection Devices Edition 213-8- Published by Infineon Technologies AG 81726 Munich, Germany 213 Infineon Technologies
More informationRevision: Rev
Improving Immunity of BGA231L7 against Out-Of-Band Jammers (LTE Band-13, GSM850/900/1800, UMTS, WLAN) Using Series Notches Application Note AN276 Revision: Rev. 1.0 RF and Protection Devices Edition 2011-09-16
More informationHigh Precision Automotive Hall Effect Switch for 5V Applications
High Precision Automotive Hall Effect Switch for 5V Applications TLE4965-5M SP000978610 Hall Effect Switch Data Sheet Revision 1.0, 2016-01-12 Sense & Control Table of Contents 1 Product Description..............................................................
More informationTVS Diodes. ESD0P2RF Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes
TVS Diodes Transient Voltage Suppressor Diodes ESD0P2RF Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD0P2RF-02LS ESD0P2RF-02LRH Data Sheet Revision 1.0, 2011-08-01 Final
More informationBFP740F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2., 215-3-12 RF & Protection Devices Edition 215-3-12 Published by Infineon Technologies AG 81726 Munich, Germany 215 Infineon Technologies
More informationEiceDRIVER. High voltage gate drive IC. Application Note. AN Revision 1.3,
High voltage gate drive IC Application Note Application Note Revision 1.3, 2014-06-03 Industrial Power Control Edition 2014-06-03 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon
More informationBFP840ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.2,
Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-03-28 RF & Protection Devices Edition 2013-03-28 Published by Infineon Technologies AG 81726 Munich, Germany 2013
More informationBFP450. Data Sheet. RF & Protection Devices. High Linearity Low Noise Si NPN RF Transistor. Revision 1.0,
High Linearity Low Noise Si NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies
More informationBFP740. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 215-1-2 RF & Protection Devices Edition 215-1-2 Published by Infineon Technologies AG 81726 Munich, Germany 215 Infineon Technologies
More informationBFP843. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor. Revision 1.
Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1., 13-6-19 RF & Protection Devices Edition 13-6-19 Published by Infineon Technologies AG 8176 Munich, Germany 13 Infineon
More informationEdition Published by Infineon Technologies AG Munich, Germany 2017 Infineon Technologies AG All Rights Reserved.
Silicon Germanium 24GHz Radar Transceiver MMIC Data Sheet Revision: 1.2 RF and Protection Devices Edition Published by Infineon Technologies AG 81726 Munich, Germany 2017 Infineon Technologies AG All Rights
More informationBGB741L7ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband RF Amplifier MMIC. Revision 2.0,
Robust Low Noise Broadband RF Amplifier MMIC Data Sheet Revision 2.0, 2012-09-10 RF & Protection Devices Edition 2012-09-10 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies
More informationRevision: Rev
High Gain Front-End Module for Global Navigation Satellite Systems (GNSS) Application Using High-Q Inductors Application Note AN269 Revision: Rev. 1.2 RF and Protection Devices Edition Published by Infineon
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B-2LRH ESD / Transient Protection Diode for Near Field Communication (NFC) ESD18VU1B-2LRH Data Sheet Revision 1.4, 213-8-7 Final Power Management
More informationBFR720L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2-09-03 RF & Protection Devices Edition 2-09-03 Published by Infineon Technologies AG 8726 Munich, Germany 3 Infineon Technologies
More informationBFP640. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2., 21-3-13 RF & Protection Devices Edition 21-3-13 Published by Infineon Technologies AG 81726 Munich, Germany 21 Infineon Technologies
More informationBFR740L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 12-06-21 RF & Protection Devices Edition 12-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 13 Infineon Technologies
More informationBFP650. Data Sheet. RF & Protection Devices. High Linearity Low Noise SiGe:C NPN RF Transistor. Revision 1.0,
High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon
More informationSPDT RF CMOS Switch. Revision: Rev
SPDT RF CMOS Switch For High Power Applications Application Note AN319 Revision: Rev. 1.0 RF and Protection Devices Edition 2013-06-26 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon
More informationBGS12PN10. Data Sheet. Power Management & Multimarket. SPDT high linearity, high power RF Switch. Revision
SPDT high linearity, high power RF Switch Data Sheet Revision 1.2-2016-07-07 Power Management & Multimarket Edition 2016-07-07 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon
More informationAnalog Manifold Air Pressure Sensor IC. Analog Absolute Pressure Sensor. Revision 1.0,
MAP Analog Manifold Air Pressure Sensor IC KP219N3621 Data Sheet Revision 1.0, 2010-09-13 Sense & Control Edition 2010-09-13 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies
More informationRevision: Rev
BGM1043N7 Low-Noise Front-End Module for Global Navigation Satellite Systems (GNSS) Application Using High-Q Inductors Application Note AN283 Revision: Rev. 1.0 RF and Protection Devices Edition Published
More informationLED Driver for High Power LEDs ILD4001. Data Sheet. Industrial and Multimarket. Step down LED Controller for high power LEDs. Revision 2.
LED Driver for High Power LEDs ILD4001 Data Sheet Revision 2.0, 2011-06-09 Industrial and Multimarket Edition 2011-06-09 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies
More informationTVS Diodes. ESD18VU1B Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes
TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B Series ESD / Transient Protection Diode for Near Field Communication (NFC) ESD18VU1B-02LRH ESD18VU1B-02LS Data Sheet Revision 1.0, 2012-02-09 Final
More informationAN523. About this document. Scope and purpose
AN523 BFQ790 for 169 MHz Smart Meter Applications About this document Scope and purpose This application note describes a medium power amplifier circuit that uses Infineon s SiGe bipolar transistor BFQ790
More informationOvervoltage at the Buck Converter Output
Overvoltage at the Buck Converter Output TLE6361 Multi Voltage Processor Power Supply Application Note Rev. 2.01, 2015-04-14 Automotive Power Table of Contents Table of Contents...............................................................
More informationRevision: Rev
BFP84FESD Low Noise Amplifier for 3.4GHz - 3.8GHz (Band 42/ 43) Technical Report TR1129 Revision: Rev. 1.1 RF and Protection Devices Edition Published by Infineon Technologies AG 81726 Munich, Germany
More informationRevision: Rev
Highly Linear and Low Noise Amplifer for Global Navigation Satellite Systems - GPS/GLONASS/Galileo/COMPASS from 1550 MHz to Applications Application Note AN251 Revision: Rev. 1.3 RF and Protection Devices
More informationBFP842ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,
Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 21--11 RF & Protection Devices Edition 21--11 Published by Infineon Technologies AG 81726 Munich, Germany 21 Infineon Technologies
More informationUltra Low Quiescent Current Linear Voltage Regulator
Ultra Low Quiescent Current Linear Voltage Regulator TLS810A1 TLS810A1LDV50 Linear Voltage Regulator Data Sheet Rev. 1.0, 2016-03-15 Automotive Power TLS810A1 TLS810A1LDV50 1 Overview Features Ultra Low
More informationBGA713L7. Data Sheet. RF & Protection Devices. Single-Band UMTS LNA (700, 800 MHz) Revision 3.0,
Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
More informationBFR840L3RHESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.
Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision., 3-4-9 RF & Protection Devices Edition 3-4-9 Published by Infineon Technologies AG 876 Munich, Germany 3 Infineon Technologies
More informationTLE4997A8D Grade1. Technical Product Description. Sense & Control. Programmable Linear Dual Hall Sensor. Revision 1.0,
Programmable Linear Dual Hall Sensor Technical Product Description Revision 1.0, 2014-05-21 Sense & Control Edition 2014-05-21 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon
More informationDual channel 5 A, high-speed, low-side gate driver with high negative input voltage capability and advanced reverse current robustness
EiceDRIVER Dual channel 5 A, high-speed, low-side gate driver with high negative input voltage capability and advanced reverse current robustness Replacement guide Tobias Gerber Application Note About
More informationBGA751N7. Data Sheet. RF & Protection Devices. SiGe Bipolar 3G/3.5G/4G Single-Band LNA. Revision 3.1,
Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
More informationBFP640ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,
Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013
More informationPower Management and Multimarket
LED Drivers for High Power LEDs ILD6070 Data Sheet Revision 2.0, 2013-02-25 Preliminary Power Management and Multimarket Edition 2013-02-25 Published by Infineon Technologies AG 81726 Munich, Germany 2013
More informationBGA748L16. Data Sheet. RF & Protection Devices. High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz) Revision 3.
(2100, 1900, 900, 800 MHz) Data Sheet Revision 3.2, 2010-06-18 RF & Protection Devices Edition 2010-06-18 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights
More informationRevision: Rev
High-Gain Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) Applications from 155 MHz to 1615 MHz Application Note AN297 Revision: Rev. 1. RF and Protection Devices Edition Published by
More informationRevision: Rev
BGS16MN14 SP6T Antenna Switch Application Note AN368 Revision: Rev. 1.0 RF and Protection Devices Edition 2014-06-02 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies
More informationBGSA14GN10. Data Sheet. Power Management & Multimarket. Single-Pole Quad Throw Antenna Tuning Switch. Revision
BGSA14GN10 Single-Pole Quad Throw Antenna Tuning Switch Data Sheet Revision 2.1-2016-06-06 Power Management & Multimarket Edition 2016-06-06 Published by Infineon Technologies AG 81726 Munich, Germany
More informationAngle Sensor TLE5012BD. Data Sheet. Sense & Control. GMR-Based Dual Die Angle Sensor. Rev. 1.2,
Angle Sensor GMR-Based Dual Die Angle Sensor TLE5012BD Data Sheet Rev. 1.2, 2017-01-13 Sense & Control Revision History Page or Item Subjects Rev. 1.2, 2017-01-13 6 Changed in Rev. 1.1: Table 1-1: package
More informationRevision: Rev
Improving Immunity of BGA825SL6 against Out-Of-Band Jammer for LTE Band-13 Application Note AN34 Revision: Rev. 1. RF and Protection Devices Edition 212-12-1 Published by Infineon Technologies AG 81726
More informationTLE4961-3M. Data Sheet. Sense & Control. High Precision Automotive Hall Effect Latch. Revision 1.0,
High Precision Automotive Hall Effect Latch Data Sheet Revision 1.0, 2012-07-20 Sense & Control Edition 2012-07-20 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies
More informationBand 20 ( MHz)
Single-Band UMTS LNA Low Noise Amplifier using for UMTS Apllications Supporting Band 20 (791- ) Application Note AN344 Revision: Rev. 1.0 RF and Protection Devices Application Note AN344 Revision History:
More informationBGA628L7. Data Sheet. RF & Protection Devices. Silicon Germanium Wide Band Low Noise Amplifier. Revision 1.1, Preliminary
Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany 2009
More informationBFP720FESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.
Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-16 RF & Protection Devices Edition 2012-10-16 Published by Infineon Technologies AG 81726 Munich, Germany 2013
More informationRevision: Rev
BGA711N7 for LTE Applications Supporting Band 1,4,10 with Reference Resistor Rref= 27 kω Application Note AN345 Revision: Rev. 1.0 RF and Protection Devices Edition Published by Infineon Technologies AG
More informationPower Management and Multimarket
LED Driver ICs for High Power LEDs ILD65 Data Sheet Revision 3.2, 24-7-9 Power Management and Multimarket Edition 24-7-9 Published by Infineon Technologies AG 8726 Munich, Germany 24 Infineon Technologies
More informationLow Dropout Linear Voltage Regulator
Low Dropout Linear Voltage Regulator TLS710B0 TLS710B0V50 Linear Voltage Regulator Data Sheet Rev. 1.0, 2015-04-02 Automotive Power Table of Contents 1 Overview......................................................................
More informationBGA734L16. Data Sheet. RF & Protection Devices. Low Power Tri-Band UMTS LNA (2100, 1900, 800 MHz) Revision 1.1,
Low Power Tri-Band UMTS LNA (2100, 1900, 800 MHz) Data Sheet Revision 1.1, 2011-03-16 RF & Protection Devices Edition 2011-03-16 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon
More informationBFR840L3RHESD for 5 to 6 GHz
Low Noise Amplifier with BFR840L3RHESD for 5 to 6 GHz WLAN Including 2.4GHz Rejection using 0201 SMDs Application Note AN290 Revision: Rev. 1.0 RF and Protection Devices Edition Published by Infineon Technologies
More information