1 Programmable Linear Dual Hall Sensor Technical Product Description Revision 1.0, Sense & Control
2 Edition Published by Infineon Technologies AG Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
3 Revision History Page or Item Subjects (major changes since previous revision) Revision 1.0, Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update Technical Product Description 3 Revision 1.0,
4 Table of Contents Table of Contents Table of Contents List of Figures List of Tables Overview Features Target Applications Pin Configuration General Block Diagram Functional Description Principle of Operation Further Notes Transfer Functions Maximum Ratings Operating Range Electrical, Thermal and Magnetic Parameters Magnetic Field Direction Definition Application Circuit PG-TDSO-8-2 Package Outlines Distance Chip to package Moisture Sensitivity Level (MSL) PG-TDSO-8-2 Package Marking Technical Product Description 4 Revision 1.0,
5 List of Figures List of Figures Figure 1-1 SMD package PG-TDSO-8-2 for the TLE4997A8D Grade Figure 1-2 Pin Configuration of PG-TDSO-8-2 package Figure 2-1 Block Diagram of the TLE4997A8D Grade1 with the ratiometric analog output interface Figure 2-2 Examples of Operation Figure 5-1 Definition of magnetic field direction of the PG-TDSO Figure 5-2 Example of the dual die output signaling Figure 6-1 Application Circuit Figure 7-1 PG-TDSO-8-2 (PG-TDSO-Plastic Green Thin Dual Small Outline), Package Dimensions Figure 7-2 Distance of chip surface to package surface Figure 8-1 PG-TDSO-8-2 (PG-TDSO-Plastic Green Thin Dual Small Outline), Package Marking Technical Product Description 5 Revision 1.0,
6 List of Tables List of Tables Table 1-1 Ordering Information Table 1-2 TLE4997A8D Grade1 Pin Definitions and Functions Table 3-1 Absolute Maximum Ratings Table 4-1 Operating Range Table 4-2 Exampe for Ambient Temperature Profile Table 5-1 Electrical Characteristics Table 5-2 Magnetic Characteristics Technical Product Description 6 Revision 1.0,
7 Overview 1 Overview Characteristic Supply Voltage Supply Current Sensitivity Range Interface Temperature Programmable Linear Hall Sensor 4.5~5.5 V 7.5 ma ±50mT ±100mT ±200mT Analog Ratiometric Output -40 C to 125 C Figure 1-1 SMD package PG-TDSO-8-2 for the TLE4997A8D Grade1 1.1 Features The TLE4997A8D Grade1 provides an integration of two individual programmable Linear Hall sensor IC s with ratiometric analog output signal in one package. 20-bit Digital Signal Processing (DSP) Digital temperature compensation 12-bit overall resolution Operating automotive temperature range -40 C to 125 C Low drift of output signal over temperature and lifetime Programmable parameters stored in EEPROM with single-bit error correction: Magnetic range and sensitivity (gain), polarity of the output slope Offset Bandwidth Clamping levels Customer temperature compensation coefficients for all common magnets Memory lock Re-programmable until memory lock Supply voltage V (4-7 V extended range) Operation between -200 mt and +200 mt within three ranges Reverse-polarity and overvoltage protection for all pins Output short-circuit protection On-board diagnostics (wire breakage detection, EEPROM error, overvoltage) Digital readout of internal temperature and magnetic field values in calibration mode Programming and operation of multiple sensors with common power supply Two-point calibration of magnetic transfer function Precise calibration without iteration steps High immunity against EMC and ESD Table 1-1 Ordering Information Product Name Marking Ordering Code Package TLE4997A8D Grade1 - - PG-TDSO-8-2 Technical Product Description 7 Revision 1.0,
8 Overview 1.2 Target Applications Robust replacement of potentiometers: No mechanical abrasion, resistant to humidity, temperature, pollution and vibration Linear and angular position sensing in automotive and industrial applications with highest accuracy requirements Suited for ASIL applications such as pedal position, throttle position and steering torque sensing High-current sensing e.g. for battery management or motor control 1.3 Pin Configuration Figure 1-2 shows the location of the Hall elements in the chip pin configuration of the package. Figure 1-2 Pin Configuration of PG-TDSO-8-2 package Table 1-2 TLE4997A8D Grade1 Pin Definitions and Functions Pin No. Symbol Function 1 n/c not connected (connection to GND is recommended) 2 V DD Supply voltage / programming interface (top die) 3 GND Ground (top die) 4 OUT Output / programming interface (top die) 5 OUT Output / programming interface (bottom die) 6 GND Ground (bottom die) 7 V DD Supply voltage / programming interface (bottom die) 8 n/c not connected (connection to GND is recommended) Technical Product Description 8 Revision 1.0,
9 General 2 General 2.1 Block Diagram Figure 2-1 shows is a simplified block diagram. VDD Bias Supply EEPROM Interface enable HALL A D D A OUT DSP V DD Temp. Sense A D OBD ROM GND Figure 2-1 Block Diagram of the TLE4997A8D Grade1 with the ratiometric analog output interface 2.2 Functional Description The linear Hall IC TLE4997A8D Grade1 has been designed specifically to meet the requirements of highly accurate angle and position detection, as well as for current measurement applications. The sensor provides a ratiometric analog output voltage, which is ideally suited to Analog-to-Digital (A/D) conversion with the supply voltage as a reference. The IC is produced in BiCMOS technology with high voltage capability and also provides reverse polarity protection. Digital signal processing using a 16-bit DSP architecture together with digital temperature and analog stress compensation guarantees excellent stability over the whole temperature range and life time. The minimum overall resolution is 12 bits. Nevertheless, some internal stages work with resolutions up to 20 bits. Technical Product Description 9 Revision 1.0,
10 General 2.3 Principle of Operation A magnetic flux is measured by a Hall-effect cell The output signal from the Hall-effect cell is converted from analog to digital signals The chopped Hall-effect cell and continuous-time A/D conversion ensure a very low and stable magnetic offset A programmable low-pass filter to reduce noise The temperature is measured and A/D converted Temperature compensation is done digitally using a second-order function Digital processing of the output value is based on zero field and sensitivity value The output value range can be clamped by digital limiters The final output value is D/A converted The output voltage is proportional to the supply voltage (ratiometric DAC) An On-Board-Diagnostics (OBD) circuit connects the output to V DD or GND in case of errors 2.4 Further Notes Product qualification is based on AEC Q100 Rev. G (Automotive Electronics Council - Stress test qualification for integrated circuits). 2.5 Transfer Functions The examples in Figure 2-2 show how different magnetic field ranges can be mapped to the desired output value ranges. Polarity Mode: Bipolar: Magnetic fields can be measured in both orientations. The limit points do not necessarily have to be symmetrical around the zero field point Unipolar: Only north- or south-oriented magnetic fields are measured Inversion: Both gain can be set to positive values, negative values or positive/negative values. OUT 12 / OUT 12 / OUT 12 / B (mt) OUT B (mt) B (mt) 16 OUT 16 OUT / / / Example 1: -Bipolar Example 2: -Unipolar -Big offset Example 3: - Bipolar - Inverted (neg. gain) Figure 2-2 Examples of Operation Technical Product Description 10 Revision 1.0,
11 Maximum Ratings 3 Maximum Ratings Table 3-1 Absolute Maximum Ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction temperature T J ) C Grade 1 Voltage on V DD pin with respect to V DD -20 2) 20 3) V 4) R THja 150 K/W ground (V SS ) Supply overvoltage I DDov 52 ma Supply reverse voltage I DDrev -75 ma Voltage on output pin with respect to ground (V SS ) V OUTov -16 5) 16 3) V R THja 150 K/W V OUT may be > V DD Magnetic field B MAX - 1 T ESD protection V ESD - +/- 2 kv According HBM JESD22-A114-B 6) 1) For limited time of 96 h. Depends on customer temperature lifetime cycles. Please ask for support by Infineon. 2) max C Ta < 30 C max C Ta < 80 C max C Ta < 125 C 3) max. 24 T J < 80 C. 4) Guaranteed by laboratory characterization, tested at ±18V. 5) Max. 1 T J < 30 C; -8.5 V for 100 T J < 80 C. 6) 100 pf and 1.5 kω Technical Product Description 11 Revision 1.0,
12 Operating Range 4 Operating Range The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4997A8D Grade1. All parameters described in the following sections refer to these operating conditions if applicable or unless otherwise indicated. Table 4-1 Operating Range Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Supply voltage V DD V 4 1) 7 V Extended range Output current I OUT -1 1 ma 2) Load resistance R L Load capacitance C L nf Junction temperature 3) T J C Example for profil see Table 4-2 1) May have reduced EMC robustness. 2) For V OUT within the range of 5%... 95% of V DD. 3) R THja 150 K/W. kω Pull-down to GND Pull-up to V DD Note: Keeping signal levels within the limits described in this table ensures operation without overload conditions. Table 4-2 Example for Ambient Temperature Profile 1) Temperature / C Active Lifetime / h -40 C..<20 C C.. <60 C C.. <90 C C.. <110 C C.. <125 C C 300 1) This lifetime statement is an anticipation based on an extrapolation of Infineon s qualification test results. Technical Product Description 12 Revision 1.0,
13 Electrical, Thermal and Magnetic Parameters 5 Electrical, Thermal and Magnetic Parameters Table 5-1 Electrical Characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Output voltage range V OUT Supply current I DD ma Output OUT shorted to supply lines % of V DD for T A 120 C for T A > 120 C I OUTsh ma for operating supply voltage range only Zero field voltage V ZERO % 2) of V DD Zero field voltage drift V ZERO mv In lifetime 3) mv error band over temp. 3) Ratiometry error E RAT % 4)5) of V DD Thermal resistance R thja 150 K/W junction to air PG-TDSO-8-2 R thjc 85 K/W junction to case Power-on time 6) t Pon 1 ms V OUT ±5% of V DD 10 V OUT ±1% of V DD Power-on reset level V DDpon 2 4 V Output DAC quantization V OUT 1.22 V DD = 5 V Output DAC resolution 12 bit Output DAC bandwidth f DAC 3.2 khz interpolation filter Differential non-linearity DNL -1 1 LSB of output DAC 1) Output noise (rms) V noise 3 mv 7) Signal delay t SD Hz 8) 1) Also in extended V DD range. For V OUT within the range of 5%... 95% of V DD, I OUT = 0mA. 2) Programmable in steps of 1.22 mv V DD = 5 V). 3) For Sensitivity S 25 mv/mt. For higher sensitivities the magnetic offset drift is dominant. This means that for the pre calibrated (typical) 60mV/mT sensitivity the typical output drift might be given due to the allowed magnetic offset tolerance up to ±0.4mT x 60 mv/mt = ±24 mv. 4) For 4.5 V V DD 5.5 V and within nominal V OUT range 5) For the maximum error in the extended voltage range 6) Response time to set up output data at power on when a constant field is applied. The first value given has a ±5% error, the second value has a ±1% error. 7) 100 mt range, sensitivity 60mV/mT, internal LP filter 244 Hz, B = 0 mt, T = 25 C. 8) A sinusoidal magnetic field is applied, V OUT shows amplitude of 20% of V DD, no LP filter is selected. Note: Take care of possible voltage drops on the V DD and V OUT line degrading the result. Ideally, both values are acquired and their ratio is calculated to gain the highest accuracy. This method should be used especially during calibration. Technical Product Description 13 Revision 1.0,
14 Electrical, Thermal and Magnetic Parameters Magnetic Parameters Table 5-2 Magnetic Characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Sensitivity S 1) ±12.5 ±300 mv/mt programmable 2) Sensitivity error band over temperature S E -2 2 % 3) Magnetic field range MFR ±50 ±100 4) ±200 mt programmable 5) Integral nonlinearity INL ±15 mv 6) = ± 0.3% of V DD Magnetic offset B OS ±100 ±400 μt 7)8)9) Magnetic offset drift B OS ±1 ±5 μt/ C error band 8) 1) Defined as V OUT / V DD = 5 V and T J = 25 C. 2) Programmable in steps of 0.024%. 3) Residual sensitivity error band over temperature when using minimum 2 temperatures. Valid for 0h in dry state only. Dry is defined after following baking process: 60minutes at T=125 C. 4) This range is also used for temperature and offset pre-calibration of the IC. 5) Depending on offset and gain settings, the output may already be saturated at lower fields. 6) INL = V OUT - V OUT, lse with V OUT, lse = least square error fit of V OUT. Valid in the range (5% of V DD ) < V OUT < (95% of V DD ) for TJ 105 C 7) In operating temperature range and over lifetime. 8) For Sensitivity S > 25 mv / mt. For lower sensitivities, the zero field voltage drift is dominant. 9) Measured at ±100 mt range. 5.1 Magnetic Field Direction Definition N Top Die S Branded Side Bottom Die Figure 5-1 Definition of magnetic field direction of the PG-TDSO-8-2 Without reconfiguration the bottom die measures the inverted field value of the top die. This leads to a characteristics as shown in Figure 5-2. Technical Product Description 14 Revision 1.0,
15 Electrical, Thermal and Magnetic Parameters Output signal Top Die Output Signal B Bottom Die Output Signal Figure 5-2 Example of the dual die output signaling Technical Product Description 15 Revision 1.0,
16 Application Circuit 6 Application Circuit shows the connection of two Linear Hall sensors to a micro controller. Voltage Tracker e.g.tle4250 Ref ADCref 47nF V DD TLE 4997 out GND 100nF 100 nf 10k 10k 100 nf ADCin1 µc 47nF V DD TLE 4997 out 10k ADCin2 GND 100nF 100 nf 10k 100 nf ADCGND Figure 6-1 Application Circuit Note: For calibration and programming, the interface has to be connected directly to the OUT pin. Technical Product Description 16 Revision 1.0,
17 PG-TDSO-8-2 Package Outlines 7 PG-TDSO-8-2 Package Outlines Figure 7-1 PG-TDSO-8-2 (PG-TDSO-Plastic Green Thin Dual Small Outline), Package Dimensions 7.1 Distance Chip to package Figure 7-2 shows the distance of the chip surface to the PG-TDSO-8-2 surface. Figure 7-2 Distance of chip surface to package surface 7.2 Moisture Sensitivity Level (MSL) The PG-TDSO-8-2 fulfills the MSL level 3 according to IPC/JEDEC J-STD-033B.1. Technical Product Description 17 Revision 1.0,
High Precision Automotive Hall Effect Switch for 5V Applications TLE4965-5M SP000978610 Hall Effect Switch Data Sheet Revision 1.0, 2016-01-12 Sense & Control Table of Contents 1 Product Description..............................................................
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