Power Management & Multimarket

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1 TVS Diode Transient Voltage Suppressor Diodes ESD108-B1-CSP0201 Ultra Low Capacitance TVS Diode in a Thin 0201 Chip Scale Package ESD108-B1-CSP0201 Data Sheet Revision 1.3, Final Power Management & Multimarket

2 Edition Published by Infineon Technologies AG Munich, Germany 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

3 Product Overview 1 Product Overview 1.1 Features ESD / transient protection of high speed data lines exceeding IEC (ESD): ±25 kv (air / contact) IEC (EFT): 50 A / ±2.5 kv (5/50 ns) IEC (Surge): 2.5 A (8/20 µs) Maximum working voltage: V RWM = ±5.5 V Ultra low capacitance C L =0.28pF (typ.) at f =1MHz Very low clamping voltage: V CL =20V (typ.) at I TLP =16A according to TLP [1] Very low dynamic resistance: R DYN =0.78Ω (typ.) Minimized overshoot due to extremely low parasitic inductance of chip scale package Miniature form factor (XY) = 0201 (0.58 mm x 0.28 mm) Thin 0.15 mm package thickness to allow direct integration into modules Optimized assembly: its bidirectional and symmetric I/V characteristics allow placement on the PCB with no danger of polarity orientation issues 1.2 Application Examples USB 3.0, Firewire, DVI, HDMI, S-ATA, DisplayPort, Thunderbolt Mobile HDMI Link, MDDI, MIPI, SWP / NFC Dedicated solution to boost space saving and high performance in miniaturized modern electronics 1.3 Product Description Figure 1-1 a) Pin configuration Pin Configuration and Schematic Diagram b) Schematic diagram Configutation_Schematic_Diagram.vsd Table 1-1 Part Information Type Package Configuration Marking code ESD108-B1-CSP0201 WLL line, bi-directional C 1) 1) The device does not have any marking or date code on the device backside. The Marking code is on pad side. Final Data Sheet 3 Revision 1.3,

4 Maximum Ratings 2 Maximum Ratings Table 2-1 Maximum Ratings at T A = 25 C, unless otherwise specified 1) Parameter Symbol Values Unit ESD (air / contact) discharge 2) V ESD ±25 kv Reverse working current I RWM 10 ma Peak pulse power 2) t p = 8 / 20 μs t p = 100 ns P PK Peak pulse current 3) I PP ±2.5 A Operating temperature range T OP -40 to 125 C Storage temperature T stg -65 to 150 C 1) Device is electrically symmetrical 2) V ESD according to IEC (R =330Ω, C = 150 pf discharge network) 3) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC W Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Table 2-2 Thermal Resistance Parameter Symbol Values Unit Min. Typ. Max. Junction - soldering point 1) R thjs K/W 1) For calculation of R thja please refer to Application Note [3] 077 Thermal Resistance Calculation. Final Data Sheet 4 Revision 1.3,

5 Electrical Characteristics at T A = 25 C, unless otherwise specified 3 Electrical Characteristics at T A = 25 C, unless otherwise specified Figure 3-1 Definitions of electrical characteristics Table 3-1 DC Characteristics at T A = 25 C, unless otherwise specified 1) Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Reverse working voltage V RWM ±5.5 V Reverse current I R ±20 na V R =±5.5V Trigger voltage V t1 ±9.5 ±12.5 V Holding voltage V h ±5.5 ±6.5 ±9.5 V I R =0.5mA 1) Device is electrically symmetrical Table 3-2 AC Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Line capacitance C L pf V R =0V, f =1MHz V R =0V, f =1GHz Final Data Sheet 5 Revision 1.3,

6 Electrical Characteristics at T A = 25 C, unless otherwise specified Table 3-3 ESD and Surge Characteristics at T A = 25 C, unless otherwise specified 1) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Clamping voltage 2) V CL V I TLP =16A, t p =100ns I TLP =30A, t p =100ns Clamping voltage 3) 20 V ESD =8kV 29 V ESD =15kV Clamping voltage 4) I PP =1A, t p =8/20µs I PP =2.5A, t p =8/20µs Dynamic resistance 2) R DYN 0.78 Ω t p =100ns 1) Device is electrically symmetrical 2) Please refer to Application Note AN210[1]. TLP parameter: Z 0 = 50 Ω, t p = 100ns, t r = 300ps 3) V ESD according to IEC (contact discharge), V CL at 30 ns (R =330Ω, C = 150 pf discharge network) 4) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC Final Data Sheet 6 Revision 1.3,

7 Typical Characteristics Diagrams 4 Typical Characteristics Diagrams Typical charateristics diagrams at T A = 25 C, unless otherwise specified I R [A] V R [V] Figure 4-1 Reverse leakage current I R =f(v R ) C L [ff] V R [V] Figure 4-2 Line capacitance C L =f(v R ), f =1MHz Final Data Sheet 7 Revision 1.3,

8 Typical Characteristics Diagrams T A T S I RWM [ma] T S, T A [ C] Figure 4-3 Reverse working current I RWM = f(t S, T A ), Device mounted on PCB with R th = 200 K/W [3] Scope: 6 GHz, 20 GS/s V CL [V] V CL-max-peak = 141 V V CL-30ns-peak = 20 V t p [ns] Figure 4-4 Clamping voltage (ESD): V CL = f(t), 8 kv positiv pulse from pin 1 to pin 2 Final Data Sheet 8 Revision 1.3,

9 Typical Characteristics Diagrams 25 0 Scope: 6 GHz, 20 GS/s V CL [V] V CL-max-peak = -137 V V CL-30ns-peak = -16 V t p [ns] Figure 4-5 Clamping voltage (ESD): V CL = f(t), 8 kv negativ pulse from pin 1 to pin Scope: 6 GHz, 20 GS/s V CL [V] V CL-max-peak = 165 V V CL-30ns-peak = 29 V t p [ns] Figure 4-6 Clamping voltage (ESD): V CL = f(t), 15 kv positiv pulse from pin 1 to pin 2 Final Data Sheet 9 Revision 1.3,

10 Typical Characteristics Diagrams 25 0 Scope: 6 GHz, 20 GS/s V CL [V] V CL-max-peak = -162 V V CL-30ns-peak = -27 V t p [ns] Figure 4-7 Clamping voltage (ESD): V CL = f(t), 15 kv negativ pulse from pin 1 to pin 2 Final Data Sheet 10 Revision 1.3,

11 Typical Characteristics Diagrams ESD108-B1-CSP0201 R DYN R DYN = 0.78 Ω I TLP [A] Equivalent V IEC [kv] R DYN = 0.78 Ω V TLP [V] Figure 4-8 Clamping voltage (TLP): I TLP = f(v TLP ) according ANSI/ESD STM Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z 0 =50Ω, t p =100ns, t r =0.6ns, I TLP and V TLP averaging window: t 1 =30ns to t 2 = 60 ns, extraction of dynamic resistance using squares fit to TLP characteristics between I TLP1 = 5 A and I TLP2 = 40 A. Please refer to Application Note AN210[1] Final Data Sheet 11 Revision 1.3,

12 Typical Characteristics Diagrams 3 ESD108-B1-CSP0201 R DYN R DYN = 1.85 Ω 2 1 I PP [A] R DYN = 1.85 Ω V CL [V] Figure 4-9 Pulse current (IEC ) versus clamping voltage: I PP = f(v CL ) Final Data Sheet 12 Revision 1.3,

13 Typical Characteristics Diagrams 0-1 Insertion Loss [db] ESD108-B1-CSP f [MHz] Figure 4-10 Insertion loss vs. frequency in a 50 Ω system Final Data Sheet 13 Revision 1.3,

14 Package Information 5 Package Information 5.1 WLL-2-1[2] Top view Bottom view 0.15± ± (0.16) ± ± ±0.02 Figure 5-1 WLL-2-1 Package outline (dimension in mm) SG-WLL-2-1-PO V Copper Solder mask Stencil apertures Figure 5-2 WLL-2-1 Footprint (dimension in mm) SG-WLL-2-1-FP V Figure 5-3 WLL-2-1 Packing (dimension in mm) SG-WLL-2-1-TP V02 1 Marking on pad-side Type code Type code SG-WLL-2-1-MK V03 Figure 5-4 WLL-2-1 Marking example Table 1-1 Part Information on Page 3 Final Data Sheet 14 Revision 1.3,

15 References References [1] Infineon AG - Application Note AN210: Effective ESD Protection Design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendations for Board Assembly (WLL) [3] Infineon AG - Application Note AN077: Thermal Resistance Calculation Final Data Sheet 12 Revision 1.3,

16 Revision History: Rev. 1.2: Page or Item Subjects (major changes since previous revision) Revision 1.3, Figure 5-4 updated Trademarks of Infineon Technologies AG AURIX, BlueMoon, C166, CanPAK, CIPOS, CIPURSE, COMNEON, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OmniTune, OptiMOS, ORIGA, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SMARTi, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore, X-GOLD, X-PMU, XMM, XPOSYS. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update Final Data Sheet 2 Revision 1.3,

17 Published by Infineon Technologies AG

18 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: ESD108B1CSP0201XTSA1

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