ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW40N135R3. Datasheet. IndustrialPowerControl
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1 ReverseconductingIGBTwithmonolithicbodydiode IHWN5R Datasheet IndustrialPowerControl
2 G C E IHWN5R ReverseconductingIGBTwithmonolithicbodydiode Features: Offersnewhigherbreakdownvoltageto5Vforimproved reliability Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly TRENCHSTOP TM technologyoffering: verytightparameterdistribution highruggedness,temperaturestablebehavior lowvcesat easyparallelswitchingcapabilityduetopositive temperaturecoefficientinvcesat LowEMI QualifiedaccordingtoJESD22fortargetapplications Pbfreeleadplating;RoHScompliant Halogenfree(accordingtoIEC62922) CompleteproductspectrumandPSpiceModels: G C E Applications: Inductivecooking Inverterizedmicrowaveovens Resonantconverters Softswitchingapplications Packagepindefinition: Pingate Pin2&backsidecollector Pinemitter KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package IHWN5R 5V A.65V 75 C HR5 PGTO27 2 Rev.2.2,2526
3 IHWN5R TableofContents Description Table of Contents Maximum Ratings Thermal Resistance Electrical Characteristics Electrical Characteristics Diagrams Package Drawing Testing Conditions Revision History Disclaimer Rev.2.2,2526
4 IHWN5R MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed8%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collectoremitter voltage VCE 5 V DCcollectorcurrent,limitedbyTvjmax TC=25 C TC= C IC 8.. Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 2. A TurnoffsafeoperatingareaVCE 5V,Tvj 75 C 2. A Diodeforwardcurrent,limitedbyTvjmax TC=25 C TC= C IF 8.. Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 2. A Gateemitter voltage TransientGateemittervoltage(tp µs,d<.) PowerdissipationTC=25 C PowerdissipationTC= C VGE Ptot ±2 ± Operating junction temperature Tvj C Storage temperature Tstg C Soldering temperature, wave soldering.6mm (.6in.) from case for s 26 Mounting torque, M screw Maximum of mounting processes: A A V W C M.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance junction ambient Rth(jc).5 K/W Rth(jc).5 K/W Rth(ja) K/W Rev.2.2,2526
5 IHWN5R ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.2mA 5 V Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=5.V,IC=.A Tvj=25 C Tvj=25 C Tvj=75 C VGE=V,IF=.A Tvj=25 C Tvj=25 C Tvj=75 C Gateemitter threshold voltage VGE(th) IC=.mA,VCE=VGE V Zero gate voltage collector current ICES VCE=5V,VGE=V Tvj=25 C Tvj=75 C Gateemitter leakage current IGES VCE=V,VGE=2V na Transconductance gfs VCE=2V,IC=.A.2 S Integrated gate resistor rg none Ω V V µa ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 272 Output capacitance Coes VCE=25V,VGE=V,f=MHz 88 Reverse transfer capacitance Cres 77 Gate charge Internal emitter inductance measured 5mm (.97 in.) from case QG VCC=8V,IC=.A, VGE=5V pf 65. nc LE. nh SwitchingCharacteristic,InductiveLoad Value Parameter Symbol Conditions Unit min. typ. max. IGBTCharacteristic,atTvj=25 C Turnoff delay time td(off) Tvj=25 C, ns Fall time VCC=6V,IC=.A, tf ns VGE=./5.V, Turnoff energy Eoff RG(on)=7.5Ω,RG(off)=7.5Ω, 2.5 mj Lσ=22nH,Cσ=pF Lσ,CσfromFig.E Energy losses include tail and diode reverse recovery. Turnoff energy, soft switching Eoff dv/dt=5.v/µs.55 mj 5 Rev.2.2,2526
6 IHWN5R SwitchingCharacteristic,InductiveLoad Value Parameter Symbol Conditions Unit min. typ. max. IGBTCharacteristic,atTvj=75 C Turnoff delay time td(off) Tvj=75 C, 5 ns Fall time VCC=6V,IC=.A, tf 98 ns VGE=./5.V, Turnoff energy Eoff RG(on)=7.5Ω,RG(off)=7.5Ω,.5 mj Lσ=22nH,Cσ=pF Lσ,CσfromFig.E Energy losses include tail and diode reverse recovery. Turnoff energy, soft switching Eoff dv/dt=5.v/µs.2 mj 6 Rev.2.2,2526
7 IHWN5R 5 5 IC,COLLECTORCURRENT[A] tp=µs 5µs µs 5µs ms ms DC Ptot,POWERDISSIPATION[W] VCE,COLLECTOREMITTERVOLTAGE[V] Figure. Forwardbiassafeoperatingarea (D=,TC=25 C,Tvj 75 C;VGE=5V) TC,CASETEMPERATURE[ C] Figure 2. Powerdissipationasafunctionofcase temperature (Tvj 75 C) VGE=2V 7V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] V V V 9V 7V 5V TC,CASETEMPERATURE[ C] Figure. Collectorcurrentasafunctionofcase temperature (VGE 5V,Tvj 75 C) VCE,COLLECTOREMITTERVOLTAGE[V] Figure. Typicaloutputcharacteristic (Tvj=25 C) 7 Rev.2.2,2526
8 IHWN5R 2 VGE=2V 7V 2 Tj=25 C Tj=75 C IC,COLLECTORCURRENT[A] V V V 9V 7V 5V IC,COLLECTORCURRENT[A] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=75 C) VGE,GATEEMITTERVOLTAGE[V] Figure 6. Typicaltransfercharacteristic (VCE=2V) VCEsat,COLLECTOREMITTERSATURATION[V] IC=2A IC=A IC=8A t,switchingtimes[ns] td(off) tf Tvj,JUNCTIONTEMPERATURE[ C] Figure 7. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=5V) IC,COLLECTORCURRENT[A] Figure 8. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,tvj=75 C,VCE=6V, VGE=/5V,RG(on)=7.5Ω,RG(off)=7.5Ω, dynamic test circuit in Figure E) Rev.2.2,2526
9 IHWN5R td(off) tf td(off) tf t,switchingtimes[ns] t,switchingtimes[ns] 2 5 RG,GATERESISTANCE[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,tvj=75 C,VCE=6V, VGE=/5V,IC=A,dynamictestcircuitin Figure E) Tvj,JUNCTIONTEMPERATURE[ C] Figure. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,vce=6v,vge=/5v, IC=A,RG(on)=7.5Ω,RG(off)=7.5Ω,dynamic test circuit in Figure E) VGE(th),GATEEMITTERTHRESHOLDVOLTAGE[V] typ. min. max. E,SWITCHINGENERGYLOSSES[mJ] Eoff Tvj,JUNCTIONTEMPERATURE[ C] Figure. Gateemitterthresholdvoltageasafunction ofjunctiontemperature (IC=mA) IC,COLLECTORCURRENT[A] Figure 2. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,tvj=75 C,VCE=6V, VGE=/5V,RG(on)=7.5Ω,RG(off)=7.5Ω, dynamic test circuit in Figure E) Rev.2.2,2526
10 IHWN5R 7 5. Eoff Eoff E,SWITCHINGENERGYLOSSES[mJ] 6 5 E,SWITCHINGENERGYLOSSES[mJ] RG,GATERESISTANCE[Ω] Figure. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,tvj=75 C,VCE=6V, VGE=/5V,IC=A,dynamictestcircuitin Figure E) Tvj,JUNCTIONTEMPERATURE[ C] Figure. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,vce=6v,vge=/5v, IC=A,RG(on)=7.5Ω,RG(off)=7.5Ω,dynamic test circuit in Figure E) 9 Eoff.5. Tj= C Tj= C E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 5. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,tvj=75 C,VGE=/5V, IC=A,RG(on)=7.5Ω,RG(off)=7.5Ω,dynamic test circuit in Figure E). dv/dt,voltageslope[v/µs] Figure 6. Typicalturnoffswitchingenergylossfor softswitching (inductiveload,tvj=75 C,VGE=/5V, IC=A,RG=7,5Ω,dynamictestcircuitin Figure E) Rev.2.2,2526
11 IHWN5R Resonant Switching Series 6 27V 8V Cies Coes Cres 2 C, CAPACITANCE [pf] VGE, GATEEMITTER VOLTAGE [V] E QGE, GATE CHARGE [nc] Figure 8. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=mhz) Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] VCE, COLLECTOREMITTER VOLTAGE [V] Figure 7. Typical gate charge (IC=A) D= single pulse. i: 2 5 ri[k/w]: E τi[s]: 2.9E 2.2E E6 E5 E... D= single pulse. i: 2 5 ri[k/w]: E τi[s]: 2.9E 2.2E E6 tp, PULSE WIDTH [s].. E5 E... tp, PULSE WIDTH [s] Figure 9. IGBT transient thermal resistance (D=tp/T) Figure 2. Diode transient thermal impedance as a function of pulse width (D=tp/T) Rev. 2.2, 2526
12 IHWN5R Resonant Switching Series 8. Tj=25 C Tj=75 C IF=2A IF=A IF=8A 7 6 VF, FORWARD VOLTAGE [V] IF, FORWARD CURRENT [A] VF, FORWARD VOLTAGE [V] Tvj, JUNCTION TEMPERATURE [ C] Figure 2. Typical diode forward current as a function of forward voltage 2 Figure 22. Typical diode forward voltage as a function of junction temperature Rev. 2.2, 2526
13 IHWN5R Resonant Switching Series PGTO27 Rev. 2.2, 2526
14 IHWN5R Resonant Switching Series VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a % VGE b t Qa IC(t) Qb di 9% IC 9% IC % IC % IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. % VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t VCE x IC x dt E t t on = VCE x IC x d t 2% VCE t t2 t t t Figure B. Rev. 2.2, 2526
15 IHWN5R Resonant Switching Series Revision History IHWN5R Revision: 2526, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) Final data sheet Minor changes We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 8726 Munich, Germany 8726 München, Germany 25 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 5 Rev. 2.2, 2526
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