PML2 Projection. Lithography. The mask-less electron multi-beam solution for the 22nm node and beyond. IMS Nanofabrication AG

Transcription

1 SEMATECH Workshop on Maskless Lithography San Francisco, CA Dec PML2 Projection Mask-Less Lithography The mask-less electron multi-beam solution for the 22nm node and beyond AG

2 Projection Mask-Less Lithography (PML2) 2 PML2 Electron Source programmable Aperture Plate System 200x 5 kev Reduction Electron Beam Optics Wafer Stage 50 kev 32nm hp node Projection Mask-Less Lithography 4 µm 4 µm 200x 20 nm

3 Projection Mask-Less Lithography (PML2) 3 PML2 Electron Source 200x 5 kev Reduction Electron Beam Optics Wafer Stage 50 kev 32nm hp node Projection Mask-Less Lithography programmable Aperture Plate System < 2 µm (with further development) < 2 µm 200x < 10 nm

4 programmable Aperture Plate System (APS) 4 broad Electron beam Aperture Plate Blanking Plate (with CMOS electronics)

5 programmable Aperture Plate System (APS) 5 broad Electron beam Aperture Plate Blanking Plate (with CMOS electronics) unblanked beam blanked beam Blanking Electrodes s of beams working in parallel

6 APS Demo: blanking of deflected electron beams 6 0 V + 4 V

7 PML2 (Projection Mask-Less Lithography) Principles 7 APS programmable Aperture Plate System Electron Source Condenser Optics Aperture Plate Blanking Plate Deflecting Electrodes 200x reduction electron beam projection optics 1st Lens Stopping Plate at Beam Cross-Over 2nd Lens Substrate / Stage

8 PML2 Principles 8 APS programmable Aperture Plate System Electron Source Condenser Optics Aperture Plate Blanking Plate Deflecting Electrodes 200x reduction electron beam projection optics 1st Lens Stopping Plate at Beam Cross-Over 2nd Lens Substrate / Stage

9 PML2 Principles 9 APS programmable Aperture Plate System Electron Source Condenser Optics Aperture Plate Blanking Plate Deflecting Electrodes 200x reduction electron beam projection optics 1st Lens Stopping Plate at Beam Cross-Over 2nd Lens Substrate / Stage

10 PML2 Principles 10 APS programmable Aperture Plate System Electron Source Condenser Optics Aperture Plate Blanking Plate Deflecting Electrodes 200x reduction electron beam projection optics 1st Lens Stopping Plate at Beam Cross-Over 2nd Lens Substrate / Stage

11 PML2 Principles 11 APS programmable Aperture Plate System Electron Source Condenser Optics Aperture Plate Blanking Plate Deflecting Electrodes 200x reduction electron beam projection optics 1st Lens Stopping Plate at Beam Cross-Over 2nd Lens Substrate / Stage

12 PML2 Principles 12 APS programmable Aperture Plate System Electron Source Condenser Optics Aperture Plate Blanking Plate Deflecting Electrodes 200x reduction electron beam projection optics 1st Lens Stopping Plate at Beam Cross-Over 2nd Lens Substrate / Stage

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14 Blanking Plate with integrated CMOS electronics 14 Fraunhofer Institut Siliziumtechnologie

15 Assembled CMOS-APS (43,008 Apertures) 15 Base Plate 43,008 programmable Apertures Blanking Plate with integrated CMOS electronics Fraunhofer Institut Siliziumtechnologie

16 CMOS APS in 1x Test Bench 16 FhG ISIT CMOS-BLC-RUN4_11_02

17 CMOS APS in 1x Test Bench 17 Beam passing APS Beam reaching substrate 42,991 blankers operational (99.96% yield)

18 CMOS Blanking Plate in APS Test Bench 18 Beam passing APS Beam reaching substrate 42,991 blankers operational (99.96% yield)

19 PML2 Results: 15 kev electron exposure with POC Tool 19 Pattern Design GDSII 460nm Exposure in 60nm PMMA resist 40nm Data Preparation* * Currently supported by: Layout beamer (GenISys) CATS (Synopsys) 40nm

20 PML2 Results: 15 kev electron exposure with POC Tool 20 15keV electron beam greytone exposure any angle lines Pattern Design (no proximity correction) 45nm half pitch 60nm PMMA (image reversal) 32nm half pitch 50nm HSQ

21 PML2 Results: 15 kev electron exposure with POC Tool 21 Exposure of 2 x 2 µm² test pattern 35nm 45nm 65nm gds npi exposure result

22 PML2 Results: 15 kev electron exposure with POC Tool 22 Exposure of 2 x 2 µm² test pattern 65nm 65nm 45nm 35nm 35nm l&s 35nm 45nm gdsii

23 PML2 Results: 15 kev electron exposure with POC Tool 23 Projection of resolution template with 200x electron-optical reduction 60nm PMMA (image reversal) 50nm HSQ 32nm hp 16nm hp 22nm hp 45nm hp

24 PML2 Results: 15 kev electron exposure with POC Tool 24 Projection of resolution template with 200x electron-optical reduction Exposure results in 50nm HSQ resist 22nm hp 32nm hp 45nm hp 16nm hp 1nm change of linewidth with 10% dose increase

25 PML2 Pre-Alpha MAGIC Project Completed Oct keV beam energy, 300mm wafer chuck 40k CMOS APS (2300 beams used) Beam to beam stitching tests Process development 25 PML2 Pre-Alpha POC Tool Tool Beam energy kev kev Demagnification 200x Current density A/cm 2 Resolution 32nm & 22nm hp Stage No PML2 Alpha Tool 50 kev 200x 2.25 A/cm 2 32nm hp Yes

26 PML2 Alpha MAGIC Project 26 Full-fledged PML2 tool for prototyping and process development (in an industrial environment) PML2 Alignment: e-beam marks on wafer (targeted accuracy: 3nm) max. writing field: 100x100mm 2 (on 300mm wafer) 262,000 parallel beams 32nm hp node (MAGIC project); capability for 22nm hp (variable spot sizes: 20nm, 16nm, ) APS 5keV 50 kev

27 PML2 Alpha Tool vs. PML2 Production Tool 27 PML2 Alpha Tool PML2 Production Tool Beam wafer 50 kev 50 kev Electron optical reduction 200x 200x Source Brightness 10 5 (A/cm 2 /Sr) 10 5 (A/cm 2 /Sr) Number of beams 262k ~10M Beam size 20nm 16nm Beam current wafer A/cm A/cm 2 Resolution 32nm hp 22nm hp Alignment e-beam marks e-beam marks & optical Stage 0.6mm/s 50mm/s (partner) APS module replacement 1 per 6 months 1 per year In-situ beam diagnostic unit No Yes 300mm wafer throughput - 120μC/cm 2

28 50 WPH 22nm hp node PML2 Cluster Tool 28 5 WPH PML2 Production Tool 300mm Wafer Track System 5 WPH PML2 Production Tool 5 WPH PML2 Production Tool 5 WPH PML2 Production Tool 5 WPH PML2 Production Tool μC/cm 2 (non-car resist) Floor Space [mm] c x WPH PML2 Production Tool 5 WPH PML2 Production Tool 5 WPH PML2 Production Tool 5 WPH PML2 Production Tool 5 WPH PML2 Production Tool 18.5 m 2 300mm Wafer Track System

29 PML2 Roadmap Proof of Concept Tool 15keV, 32nm & 22nm hp, 150mm wafer, no stage 2008 Pre Alpha Tool 50keV, 32nm & 22nm hp, 150mm & 300mm wafer, no stage 2009 Alpha Tool 50keV, 32nm & 22nm hp, 300mm wafer stage (with limited capabilities) 2011/2012 Production Tool (with strategic partner) 50keV, 22nm hp, 300mm wafer stage 5wph Cluster Tool: 50wph

30 Acknowledgements 30 European Union Austrian Industrial Research Promotion Fund

31 The End 31 Thank you for your attention!

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34 CMOS APS in 1x Test Bench 34 Beam passing APS Beam reaching substrate 42,991 blankers operational (99.96% yield)

35 PML2 Results: 15 kev electron exposure with POC Tool 35 nested line width vs exposure time for 15keV e- into 50nm HSQ line width (nm) exposure time (ms) 1nm change of linewidth with 10% dose increase

36 Emulation of PML2 exposures by simulation software Sentaurus Lithography e-beam µc/cm² 65nm l&s Writer Hardware Test Patterns Simulation software 50nm HSQ SNPS Proximity correction 298 µc/cm² 35nm l&s Corrected Layout

37 PML2 Alpha Tool: Data Flow GDS 2 CATS conversion (offline, including PEC) CATS 2 PML2 (online) 100 Mbit/s 100 Mbit/s PML2 37 RAM RAM RAM RAM 1 Gbit/s Stripe Buffer Optical Data Path (max. 50 Gbit/s) Receiver FPGA APS 14 Gbit/s Wafer Data Flow requirements for 32nm hp node: 25mm x 25mm dye 10 GByte stripes (3.1 TByte data) 300mm wafer (16 chips): 50 TByte data 1 wafer 8h (~10h with overhead)

38 Throughput of PML2 Production 22nm hp 38 I AES (PML2 Area Exposure Speed) ) = I / (D pd) = total current through column at wafer carrying beamlets with adequate resolution D = resist exposure dose pd = pattern density I = 90 µa AES = 1.5 cm 2 /s for D = 120 µc/cm 2 and pd = 50%/100 (choosing uncritical resist) Raw Throughput = Area-300mm 300mm-Wafer / AES 8 WPH Throughput potential including overheads: : 5 WPH (10 WPH potential for smaller resist exposure dose)

39 Proximity Effect Parameters for 15kV PML2 First results α 24-27nm β µm 39