Ion Beam Lithography next generation nanofabrication
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1 Ion Beam Lithography next generation nanofabrication EFUG Bordeaux 2011 ion beams develop Lloyd Peto IBL sales manager Copyright 2011 by Raith GmbH
2 ionline new capabilities You can now Apply an ion beam processing step automatically across a whole wafer of devices (000 s) Add ion beam elements to your standard lithographic device nano-fabrication process Use a single GDSII file mixing optical litho, EBL and IBL Modify, optimise, repair, mill, etch, deposit, implant and intermix elements of your design at any stage Create & analyse new ion beam processes quickly and easily in-situ and in 3D Use new processes accurately and repeatedly without user intervention Copyright 2011 by Raith GmbH 2
3 IBL Concept vs. FIB microscope FIB / FIB-SEM tools automated patterning tool multiple processes, step&repeat advanced beam control and GDSII editor for complex designs FIB centric & normal incidence for high resolution and stability no imaging required user driven microscope single process single site simple patterns for typical FIB applications SEM imaging prioritised with tilted FIB coincident at 1 WD continuous monitoring required large area process by automated stitching or continuous writing automated mark recognition and alignment for overlay patterning inspection, analysis and preparation within field of view large conventional -sect, TEM preparation of ultrathin lamella Copyright 2011 by Raith GmbH 3
4 Simple, non-destructive navigation Step1 Step2 Step3 500 µm Laser stage & sample map optical detectors: CCD & macroscope Laser stage & UV coordinate system Copyright 2011 by Raith GmbH 4
5 Main Components 100 mm laser interferometer stage NanoFIB TM V3 ion column 20 MHz, 16 bit digital pattern generator dedicated software for lithography and nano engineering Key architecture lithography system with specs Ion beam centric with high resolution variable WD, compact optics normal incidence precise and stable navigation Copyright 2011 by Raith GmbH 5
6 Laser interferometer stage 100 mm LIS: unique feature for an ion beam system Ultra high accuracy positioning, repeatability and dynamic exposure (FBMS) capability Stitching < 60 nm* Overlay < 60 nm* 100x100mm travel range Min. step size 1 nm Extended lines FBMS mode length > 1 mm *mean + 2σ Copyright 2011 by Raith GmbH 6
7 UNIQUE - laser stage enabled applications automated no-imaging wafer scale applications fabrication with stitching also with FIB + Elphy step and repeat overlay w/ auto alignment with LIS only FBMS nano fabrication IBL combined with EBL, optical or imprint in nano fabrication processes sample add layer remove hard mask patterned sample Copyright 2011 by Raith GmbH 7
8 Sample holders and 3D module universal / flat sample, mask and wafer hold: large area 2D 3D rotation tilt module: 5 axes movement 360 rotation / 0 90 tilt Copyright 2011 by Raith GmbH 8
9 Productionised NanoFIB V3 column Beam energy 15 to 40 kv Beam current 0.5 pa to 1 na uncompromised low current performance m+2σ in 50 µm WF < 20 nm short optical length and WD optimized for high resolution piezo motor based aperture driver for 14 apertures Min. deposited line width < 60nm Min. milled linewidth < 10 nm true 5nm imaging resolution 100 µm WF error 1000x First development: EU-Project NanoFIB ( Copyright 2011 by Raith GmbH 9
10 DirectAlignDesign Microscope mode rapid prototyping and process development with patterning on images (POI) D n D of design elements or draw any shape full GDSII handling with editor save shapes and recipes straight to automation list Copyright 2011 by Raith GmbH 10
11 Process control tools recipe manager for convenient handling of advanced parameters various parameters for complete definition, exact control and optimization of process LiveProcessMonitor for end point detection and live process control Copyright 2011 by Raith GmbH 11
12 Accessories Loadlock for fast hygienic sample exchange Optical Macroscope for navigation (top down view) Up to 4 Cartesian Nanomanipulators Gas injection system (GIS) for GAE or IBID Auto wafer height sensing system Copyright 2011 by Raith GmbH 12
13 Patterning Process & ionline sample add layer Functionalisation and direct nanofabrication add hard mask spin resist EBL expose resist develop resist pattern hard mask remove resist exposure milling milling with resist without resist direct milling surface science pattern layer milling remove hard mask patterned sample deposition+milling Copyright 2011 by Raith GmbH 13
14 Functionalisation (exposure mode) sample add layer add hard mask spin resist expose resist develop resist pattern hard mask remove resist pattern layer remove hard mask patterned sample functionalisation magnetization Pt 3.4nm Co 1.4nm Pt 4.5nm no surface topography 10 3 ions per dot pinning of domain walls at defects Copyright 2011 by Raith GmbH 14
15 Direct nano-fabrication (3D milling mode) Nano-fabrication sample add layer add hard mask spin resist Courtesy Drs. A.Joshi-Imre and L.E.Ocola- at the CNM - Argonne National Labs expose resist develop resist pattern hard mask remove resist pattern layer remove hard mask patterned sample Copyright 2011 by Raith GmbH Continuously varying depth/dose control Micro-fluidic mixer prototype segment in sapphire. 15
16 Direct nano-fabrication (3D milling mode) Nano-fabrication sample add layer add hard mask spin resist expose resist develop resist pattern hard mask High resolution milling extended duration (16hrs) remove resist pattern layer remove hard mask patterned sample Copyright 2011 by Raith GmbH 16 Hard -ray zone plate (500nm Au). Courtesy MaxPlanck Institute
17 Resist (exposure and etching modes) sample add layer add hard mask spin resist expose resist develop resist PMMA 50 nm exposure milling pattern hard mask remove resist pattern layer remove hard mask patterned sample 700 nm thick, mill any resist Copyright 2011 by Raith GmbH 17
18 Direct hard mask (milling mode) sample add layer add hard mask spin resist expose resist develop resist InP buffer InP substrate Si 3 N 4 milling InAs MOCVD process pattern hard mask milling remove resist pattern layer remove hard mask Si 3 N 4 removal patterned sample Copyright 2011 by Raith GmbH 18
19 functional gold layer (milling mode) sample add layer nano antenna on AFM tip add hard mask spin resist expose resist develop resist pattern hard mask remove resist pattern layer milling remove hard mask patterned sample Anika Kinkhabwala, Moerner Lab, Stanford Copyright 2011 by Raith GmbH 19
20 FBMS milling mode for large areas sample add layer add hard mask spin resist Cutting of 1 mm line with pads expose resist develop resist pattern hard mask remove resist pattern layer remove hard mask patterned sample milling 30 nm 150 nm 30 nm Copyright 2011 by Raith GmbH 20
21 topographic wafer (milling mode) sample add layer add hard mask 2 wafer with SiC membranes CNRS, Paris spin resist expose resist develop resist pattern hard mask remove resist automated pore milling d=40 nm pattern layer milling remove hard mask patterned sample TEM image Copyright 2011 by Raith GmbH 21
22 Single pixel depo+3d Analysis (depo&milling modes) sample add layer Low dose images and connections to CNT s add hard mask spin resist expose resist develop resist pattern hard mask remove resist Protection, x-sectioning and imaging of peptide structures pattern layer remove hard mask patterned sample deposition+milling Copyright 2011 by Raith GmbH 22
23 ionline new capabilities confirmed So you really can Apply an ion beam processing step automatically to a whole wafer of devices Add ion beam elements to your standard lithographic device fabrication process Use a single GDSII file mixing optical litho, EBL and IBL Modify, optimise, repair, mill, etch, deposit, implant and intermix elements of your design at any stage Create & analyse new ion beam processes quickly and easily in-situ and in 3D Use new processes accurately and repeatedly without user intervention Copyright 2011 by Raith GmbH 23
24 stop practicing start producing Copyright 2011 by Raith GmbH 24
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