Progress & actual performance of the Selete EUV1

Transcription

1 Progress & actual performance of the Selete EUV1 Kazuo Tawarayama*, Hajime Aoyama, Kentaro Matsunaga, Shunko Magoshi Selete Suigen Kyoh, Yumi Nakajima, Satoshi Tanaka, TOSHIBA 1

2 Outline Introduction Tool history & status Tool monitoring technology Focus monitor Dose monitor TEG history & status *TEG (test element group) Resolution enhancement Summary

3 EUV1 tool in Selete EUV1 Nikon EUV1 Wavelength Field Size 13.5 nm 26 mm x 33 mm Wafer track NA 0.25 σ Max ~0.8, OAI available Magnification x 1/4 Source Power Xe DPP pinch 2pi Various selete activities experiments Process development of EUV1 is on going with improved stability H.Kawai, et al. ET-02 Tool development Y.Tanaka, et al. :ET-P05 Mask development T.Kamo, et al. : MA-05 T. Terasawa, et al. : RI-01

4 Various Selete program is working on EUV1 T. Terasawa, et al. : RI-01 Mask development T.Kamo, et al. : MA-05 Tool development Y.Tanaka, et al. :ET-P05

5 Selete EUV1 history CY Fab. setup start install assembling Hardware modification Software tuning 1 st light Static performance development optimization Scan 3x TEG BEP TEG Started installation at Jan. 07, Assembling at Selete Tool development & process study at simultaneously 2x TEG

6 CY Selete EUV1 history Sapporo Lake Tahoe Prague Kobe start install 1 st light Static Scan TEG trial 2007 EYVL sympo, ET-03, H. Tanaka 2008 EUVL sympo, ET-01 K.Tawarayama 2009 SPIE, , K.Tawarayama 2009 SPIE, , H.Aoyama 2009 EUVL sympo, ET-05 K.Tawarayama 2009 EUVL sympo, DI2-05, H. Aoyama

7 EUV1 s activity CY Cumulative pulse Cumulative Energy Cumulative wafers 1 st light Static Scan TEG trial

8 Outline Introduction Tool history & status Tool monitoring technology Focus monitor Dose monitor TEG history & status *TEG (test element group) Resolution enhancement Summary

9 Monitoring tool (Focus) Monitor pattern Off-axis Monopole illumination Reference pattern 1: here, the 2nd order ray is dismissed Double pitch 0 +1 Asymmetric diffraction Symmetric diffraction δf δx shifted at defocus δx 0 NOT shifted Measure the transferred position difference between two patterns T.Sato, et al. JJAP 48 (2009) 06FA03

10 Monitoring tool (Focus) Experimental result (NA=0.25, EUV1) NA=0.25 sigma outer =0.63 sigma inner =0.33 Open aperture angle 45 degrees ref. pattern Pitch:28nm meas. pattern Pitch:56nm shift at defocus Relative pattern shift [nm] Defocus [nm] 0nm Defocus Focus monitoring technique is avilable for EUV using reflective optics K.Tawarayama, et al. :ET-P02-150nm Defocus

11 Monitoring Tool (Dose) Effective-Exposure-Dose Monitor Mask Y.Nakajima, et al. SPIE Vol.7748, (2010) calibration Projection Optics L effective dose Length dose Intensity Profile Position Effective dose map across the chip Resist Pattern On Wafer Effective-exposure-dose variation is obtained precisely using dose monitor technique.

12 Monitoring Tool (Dose) before Effective-Dose uniformity 16.8% 32nm Space CDU after Uniformity improvement 9.5% Effective dose variation across the field was improved CDU also improved

13 Outline Introduction Tool history & status Tool monitoring technology Focus monitor Dose monitor TEG history & status *TEG (test element group) Resolution enhancement Summary

14 TEG trial in Selete

15 Selete EUV1 history (TEG) CY x TEG BEP TEG 2x TEG 2009 SPIE, H.Aoyama, et al., EUVL sympo, S.Kyoh, et al., DI SPIE, K.Tawarayama, 76361O 2010 SPIE, H.Aoyama, et al., 76361N 2010 SPIE, Y.Tanaka, et al., 76362D *BEP-TEG (Back-End of Process TEG)

16 2x TEG result Wed. A.M. : Y.Nakajima, et al. :DI-03

17 Resist activity K.Matsunaga, et al. :RE-03 Applied NEW resist to PL-TEG

18 Resist pattern SSR6 version 28nm 0.25NA/Dipole 26nm 24nm SSR6-55nmt TBAH-dev. PL-sub. SNAKE COMB Snake Comb CELL OPC was adopted only cell area

19 Outline Introduction Tool history & status Tool monitoring technology Focus monitor Dose monitor TEG history & status *TEG (test element group) Resolution enhancement Summary

20 for pushing the limit EUV1 contrast Contrast Contrast CONV Ann Dipole NA/0.8σ no aberration, no flare, HalfPitch [nm] HalfPitch [nm] 10 Conv. ½ Ann. Dipole

21 Conv. Resolution Limit 2009 Oct. Last Sympo. σ=0.8 25nm 24nm 23nm 22nm Dipole 25nm 24nm 23nm 22nm σ=0.8 21nm 20nm 19nm 18nm σ=0.4

22 Resolution Limit Conv. σ=0.8 25nm 24nm 23nm 22nm SSR6 40nmt TBAH Dipole 25nm 24nm 23nm 22nm σ=0.8 21nm 20nm 19nm 18nm σ=0.4

23 aggressive dipole EUV1 contrast Contrast Contrast HalfPitch [nm] HalfPitch [nm] The way to beyond 1x nm GEN.

24 Farther limit to the 1X world 24nm 23nm 22nm 21nm 20nm Dipole. 19nm 18nm 17nm 16nm 15nm Dipole2 24nm 23nm 22nm 21nm 20nm 19nm 18nm 17nm 16nm 15nm

25 Step forward to the 0x world How CLOSE are we? Production Tool Resist Mask Pre-Production 3x TEG maturity 2x TEG Trial 1x TEG 3x 2x 1x 1x TEG 0x rule [nm]

26 Summary EUV1 is process development on going. Started installation & assembling at selete from 2006, and so many selete activities are on going. Tool monitoring techniques is working & useful for EUV litho.check. We chechked resolution limit of EUV1, Conventional illumination can resolve 25nm 1:1 L&S, 20nm using dipole illumination. To apply aggressive dipole, 1x nm L&S was obtained, EUV1 has highly potential to resolve for 1x generation. We tried to evaluate process TEG, yield number was obtained 2x nm region using electrical meas. applied SSR6, litho. performance was good, waiting for yield measurement. We continue to try improvement of EUV1 performance.

27 Acknowledgements Special thanks to Nikon: Tool Setup & Development Team Selete: All colleagues Thank you for your attention and also myriads of gods