Team Galt Real Microsystems

Transcription

1 ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Team Galt Real Microsystems Dr. Lynn Fuller, Dr. Ivan Puchades, Heidi Purrington, Murat Baylav, Jake Leveto, Ellen Sedlack, Tal Nagourney, Christian Seemayer, Jeff Traikoff Webpage: 82 Lomb Memorial Drive Rochester, NY Tel (585) Department webpage: Team Galt_2012.ppt Page 1

2 MISSION - VISION Mission : Design, Fabricate and Evaluate Microelectromechanical Systems (MEMS) integrated with CMOS electronics Real Microsystems. Vision: Become the recognized best educational and university research program in the world for Microsystems. Page 2

3 OUTLINE Introduction Thrusts Team Technology Tasks Example Research Projects Team Galt Who is John Galt Page 3

4 INTRODUCTION Page 4

5 INTRODUCTION Team Galt s definition for Microsystems is the integration of MEMS sensors and actuators with CMOS electronics to provide solutions for a wide variety of applications including automotive, military, aerospace, consumer and biomedical. In order to achieve our Vision Team Galt will focus on the Mission, Goals and Tasks presented here. The educational part of our mission is carried out by the various courses and programs at RIT including the and Microsystems Engineering Programs and courses in CMOS Manufacturing and MEMS offered in. Page 5

6 Signal Conditioning Communication Multi-Sensor MEMs Chip TYPICAL MICROSYSTEM Power Management other. µp. Micro Controller Page 6

7 TEAM THRUSTS CMOS Mixed Signal Processing (IC Design) for MEMS MEMS Sensors and Actuators* Packaging of MEMS Devices and Microsystems* Test and Evaluation of MEMS and Microsystems* *for a wide variety of application areas Page 7

8 TEAM TECHNOLOGY TASKS Develop CMOS Processes Sub-CMOS & Adv-CMOS Develop SPICE Parameters for these CMOS Processes Develop CMOS Design Methodologies Standard Cell Design CMOS Macrocells, Fabricate and Test Develop MEMS Processes Bulk and Surface Design Many Types of MEMS Sensors and Actuators Develop Prototype PCB Capability Develop Various Communication Methods CAN, Bluetooth, ZigBee, etc. Develop MEMS Packaging Technology Develop Test Capability for Microsystems for Multiple Application Areas Page 8

9 MORE TEAM TECHNOLOGY TASKS MEMS on 6 wafers to support CMOS then MEMS Integration Solder Bump Technology packaging technology Thru wafer interconnect technology packaging technology Better CMOS Signal Processing Macrocells CMOS Wireless and RFID Communication and Electronics Energy Harvesting to Power MEMS - Sensors More Different Chemical - Sensors Page 9

10 CURRENT TEAM PROJECTS Army Drinking Water Sensor (Dr WatSen) Heidi MEMS Switch Ivan and Dave Caberra and Artur NAVAIR Prognostics Microsystem (PRISM) Jake Dr. KSV Gold Finger Chemical Sensors Ellen Tin Oxide Chemical Sensors (SnO) Senior Project ISFETs Murat Viscosity Sensor Ivan Micro Mass Spectrometer MEMS Class Two Layer Metal Submicron CMOS Lynn & Archana Residual Oxidant Sensor, Self Cleaning Total Organic Carbon in Water Sensor Tal and Jeff Energy Harvesting Ivan and Renat Three Axis High g Accelerometer - Tal Page 10

11 PORTFOLIO OF SENSORS Team Galt has made and characterized the following MEMS sensors and integrated subsets of these in a single chip. Pressure Temperature Viscosity Humidity Water Level Turbidty Total Dissolved Solids Light Biofilm Liquid Color Change Accelerometer, 1x, 3x Shock Sensor Chem Resistors Acetone Ethanol ISFETS ph Chlorine SnO Film Oxygen Hydrogen Spectroscopic Impedance Mass Page 11

12 RIT ADVANCED CMOS VER 150 RIT Advanced CMOS 150 mm Wafers Nsub = 1E15 cm-3 or 10 ohm-cm, p Nn-well = 1E17 cm-3 Xj = 2.5 µm Np-well = 1E17 cm-3 Xj = 2.5 µm Shallow Trench Isolation Field Ox (Trench Fill) = 4000 Å Dual Doped Gate n+ and p+ Xox = 100 Å Lmin = 0.5 µm, Lpoly = 0.35 µm, Leff = 0.11 µm LDD/Nitride Side Wall Spacers TiSi2 Salicide Tungsten Plugs, CMP, 2 Layers Aluminum L Long Channel Behavior Vdd = 3.3 volts Vto= volts Page 12

13 RIT ADVANCED CMOS VER 150 NMOSFET N+ Poly PMOSFET P+ Poly p+ well contact N+ D/S LDD P-well N-well LDD P+ D/S n+ well contact Page 13

14 RIT SUB-CMOS PROCESS N+ Poly NMOSFET 0.75 µm Aluminum PMOSFET LVL 1 n-well LVL 6 P-LDD p+ well contact 6000 Å Field Oxide N+ D/S LDD LDD P+ D/S n+ well contact Channel Stop N-type Substrate 10 ohm-cm CC P-well N-well POLY ACTIVE P SELECT LVL 2 - ACTIVE LVL 3 - STOP LVL 4 - PMOS VT LVL 7 N-LDD LVL 8 - P+ D/S LVL 9 - N+ D/S METAL LVL 8 - CC N SELECT N-WELL LVL 5 - POLY 11 PHOTO LEVELS LVL 9 - METAL

15 SUB-CMOS 150 PROCESS SUB-CMOS Versions ID01 -scribe 2. DE01 4pt probe 3. CL01 RCA Clean 4. OX05--- pad oxide, Tube 4 5. CV Å 6. PH03 1- n well 7. ET29 LAM IM01 n-well P31 9. ET07 Branson Asher 10. CL01 RCA Clean 11. OX04 well oxide, Tube ET19 Hot Phos 13. IM01 p-well B OX06 well drive, Tube ET06 - BOE 16. CL01 RCA Clean 17. OX05 pad oxide, Tube CV Å 19. PH Active 20. ET29 LAM ET07 Branson Asher 22. PH p-well stop 23. IM01- stop B ET07- Branson Asher 25. CL01 RCA Clean 26. OX04 field, Tube ET19 Hot Phos 28. ET06 BOE 29. OX04 Kooi, Tube IM01 Blanket Vt 31. PH PMOS Vt Adjust 32. IM01 Vt- B ET07 Branson Asher 34. ET06 - BOE 35. CL01 RCA Clean 36. OX06 gate, Tube CV01 Poly 5000A 38. IM01 - dope poly 39. OX08 Anneal, Tube DE01 4pt probe 41. PH03 5 poly 42. ET08 LAM ET07 Branson Asher 44. PH n-ldd 45. IM01 LDD P ET07 Branson Asher 47. PH p-ldd 48. IM01 LDD B ET07 Branson Asher 50. CL01- RCA Clean 51. CV03 TEOS, 5000A 52. ET10 Drytek Quad 53. PH N+D/S 54. IM01 N+D/S P ET07 Branson Asher 56. PH03 9 P+ D/S 57. IM01 P+ D/S B ET07 Branson Asher 59. CL01 Special - No HF Dip 60. OX08 DS Anneal, Tube 2, CV03 TEOS, 5000A 62. PH03 10 CC 63. ET06 Drytek Quad / BOE 64. ET07 Branson Asher 65. CL01 Special - Two HF Dips 66. ME01- CVC PH metal 68. ET15 plasma Etch Al 69. ET07 Solvent + Asher 70. SI01 Sinter Tube CV03 TEOS- 5000Å 72. PH03 VIA 73. ET06 Drytek Quad / BOE 74. ET07- Strip Resist 75. ME01- PE PH03 - M2 77. ET15 -plasma Etch Al 78. ET07 Solvent + Asher 79. SEM1 - pictures 80. TE TE TE TE04 Page 15

16 TEST CHIP LAYOUT The test chip is divided into nine cells each 5 mm by 5 mm. The cells are divided into 36 individual tiny cells each 800 µm by 800 µm in size plus 200 µm sawing streets. Most structures fit into the tiny cells including a 12 probe pad layout for probe card testing. The overall chip size is µm by 14800µm plus 200 µm sawing street to give x and y step size of 15 mm by 15 mm. (14800,14800) Page 16

17 FLOORPLAN AND HIERARCHY CMOSTestchip2007 Process Digital Primitive Cells Basic Cells Macro Cells Analog & Mixed Projects Packaging MEMS Project 1 Project2 Packaging Project Project 1 Process & Manufacturing Structures Packaging Project Sensors Project 2 MEMS Digital Macro Cells Digital Cells Alignment, Resolution, Overlay, Logo, Title Page 17

18 EXCEL SPICE PARAMETER CALCULATOR SPICE Parameter Calculator.xls Page 18

19 SUB-CMOS PROCESS NMOS AND PMOS NOMINAL BSIM3 (V3.1) SPICE PARAMETERS * MODEL RITSUBN7 NMOS (LEVEL=7 +VERSION=3.1 CAPMOD=2 MOBMOD=1 +TOX=1.5E-8 XJ=1.84E-7 NCH=1.45E17 NSUB=5.33E16 XT=8.66E-8 NSS=3E11 *+XWREF=2.0E-7 XLREF=2.95E-7 +VTH0=1.0 U0= 600 WINT=2.0E-7 LINT=1E-7 +NGATE=5E20 RSH=108 JS=3.23E-8 JSW=3.23E-8 CJ=6.8E-4 MJ=0.5 PB=0.95 +CJSW=1.26E-10 MJSW=0.5 PBSW=0.95 PCLM=5 +CGSO=3.4E-10 CGDO=3.4E-10 CGBO=5.75E-10) * * MODEL RITSUBP7 PMOS (LEVEL=7 +VERSION=3.1 CAPMOD=2 MOBMOD=1 +TOX=1.5E-8 XJ=2.26E-7 NCH=7.12E16 NSUB=3.16E16 XT=8.66E-8 NSS=3E11 PCLM=5 *+XWREF= 2.0E-7 XLREF=3.61E-7 +VTH0=-1.0 U0= WINT=2.0E-7 LINT=2.26E-7 NGATE=5E20 +RSH=75 JS=3.51E-8 JSW=3.51E-8 CJ=5.28E-4 MJ=0.5 PB=0.94 +CJSW=1.19E-10 MJSW=0.5 PBSW=0.94 +CGS0=4.5E-10 CGD0=4.5E-10 CGB0=5.75E-10) see: Page 19

20 VERIFICATION OF DC SPICE MODEL PARAMETERS SPICE Using Level = 7 transistor models Measured SPICE Measured Page 20

21 VERIFICATION OF SPICE AC PARAMETERS SPICE Three Stage Ring Oscillator with Transistor Parameters for 73 Stage Ring Oscillator and Supply of 5 volts td = T / 2N = 5.5nsec / 2 / 3 td = 0.92 nsec Page 21

22 MEASURED RING OSCILLATOR OUTPUT 73 Stage Ring at 5V td = 104.8ns / 2(73) = ns Page 22

23 DESIGN METHODOLOGY BASED ON STANDARD CELLS Page 23

24 STANDARD CELL XOR LAYOUT Page 24

25 DEVELOP CMOS MACROCELLS USING STANDARD CELLS CMOS macrocells for signal processing: CMOS circuits that have been designed, fabricated and verified. These circuits are ready for use in signal processing with MEMS sensors. MEMS sensors that provide voltage output (10 s of millivolts) or capacitance changes of a few pf. These outputs are amplified and converted to other more useful formats using on chip CMOS integrated circuits. 8-Bit Counter for A-to-D Conversion in 1µm CMOS Dr. Dhireesha Kudithipudi, Burak Baylav Page 25

26 DEVELOMENT OF MEMS BULK PROCESSES AT RIT 1 P+ Diffused Layer (110 Ohm/sq) 1 N+ Layer (50 Ohm/sq) 1 N-Poly layer (40 Ohm/sq) Variations Include: 1 metal layer (Al 1µm thick) 2-layer metal Top Passivation and Via Top hole µm Si diaphragm Page 26 Accelerometers

27 RIT MEMS BULK PROCESS FLOW Ivan Puchades Page 27

28 SEM OF RIT PRESSURE SENSOR Front Back Page 28

29 DEVICES THAT HAVE BEEN MADE WITH RIT BULK PROCESS Thermally actuated bimetallic micro-pump Thermally actuated bimetallic micro-pump with resistors for sensing and feedback Pressure Sensor, diffused resistors or poly resistors Heater on diaphragm either poly or diffused resistor heater Thermocouples on diaphragm with heater PN junctions, diodes, photodiodes, diodes for electronics Diode temperature sensors on diaphragm with heater Diffused Heater plus temperature sensors Heater plus interdigitated chemical sensor Class Project Chip Gas flow sensor single resistor anemometer Gas flow sensor, heater & two resistors Transistors and logic Viscosity Sensor Page 29

30 DEVELOPMENT OF MEMS MULTI-SENSOR CHIP S MEMS Sensors: humidity, temperature, light, spectroscopic impedance, pressure, viscosity, chemical, biofilms, etc. Humidity Sensor 5mm x 5mm Microchip Temperature Sensor & Heater Pressure Sensor Fabricated Multi Sensor Chips Light Sensor Cleanroom Bay Environment Sensor Heidi Purrington Page 30

31 DEVELOP PCB PROTOTYPE CAPABILITY Prototype evaluation: breadboard sensors and signal processing electronics at the PCB level to evaluate different approaches for realizing microsystems. Jirachai, Murat Baylav Jirachai Jennifer Albrecht Page 31

32 DEVELOP MEMS PACKAGING TECHNOLOGY Packaging of MEMS and Microsystems: Many of the devices we are now making need to be packaged to be tested. Some devices have a large number of connections thus probing is difficult. Other devices need to be interfaced with physical parameters such as pressure, gas flow, acceleration, etc. This project involves developing flexible, low cost, approaches for creating packages for these applications. Packaging of Pressure Sensor Packaged Gas Flow Sensor George Manos Page 32

33 POWER CONDITIONING FOR MOST OF OUR PCB S Unregulated 9 to 24 volts DC LM317M Vout 1.2 to mA Positive Voltage Regulator +5 Volts mic2950 Vout mA Positive Voltage Regulator +3.3 Volts MAX1044 Vin 1.5 to 10 Vout = ~ -Vin -5 Volts UCC384 Vout mA -3.3 Volts Voltage Converter Negative Voltage Regulator Page 33

34 DEVELOP MICROSYSTEM TEST CAPABILITY Microsystem Test and Evaluation: We will develop Microsystem test capability for many different applications. Accelerometer Testing Pressure Sensor Testing Gas Flow Sensor Testing Page 34

35 OTHER TEAM ACTIVITIES Create a team webpage Create posters showing team projects Present and publish papers at conferences Publish papers in technical journals Encourage senior projects with similar goals Masters thesis with similar goals Ph.D. thesis with similar goals Page 35

36 TEAM S FUNDED RESEARCH This is a list of some funded research projects this team has been involved with: Eastman Kodak Co. Ink Jet Head with 30 rows and 47 columns Bausch and Lomb, Inc. Wireless Pressure Sensors for Glaucoma Impact Technology, LLC Multisensor MEMS Oil Quality Sensor NYSTAR/CEIS Multisensor MEMS Oil Quality Sensor Army Multisensor MEMS Drinking Water Quality Sensor Air Force Wireless Tire Sidewall Temperature Sensor University of Rochester Medical Center Energy Harvesting and Motion Sensing Pacemaker Leads NIH/U of Hawaii Biosensors Page 36

37 KODAK HIGH VOLTAGE TRANSISTOR ARRAY 30 Rows, 47 Columns, 4 inch, Ink Jet Array 45V, 65mA N-DMOSFET 16 Masks, 8 at 1X, 8 at 5X Drain Gate Source Source Ivan Puchades Page 37

38 5mm x 5mm Team Galt Real Microsystems IMPACT TEC, LLC. MEMS OIL QUALITY SENSOR Photo Diode Diffused Heater Actuator Pressure Sensor Humidity Sensor Chem. Capacitor Diode Temperature Sensor Picture of MEMS Multisensor Ze r o -S p a n C o m p e n sa te d P r e ssu r e S e n so r o v e r T e m p e r a tu r e O u t p u t V o lt a g e [ m Temp Sensor Test Oil with 1% Soot Page 38 P r e s s u r e [ p s i] T = 2 7 C T = 5 7 C T = 8 4 C Temperature Study

39 MEMS ACTUATOR AND POSITION SENSOR Ivan Puchades y = x R 2 = V o u t (m V ) Z - deflection (µm ) Page 39

40 IMPACT TEC LLC. OIL LEVEL & TEMPERATURE SENSOR R1 R2 C + - R +V -V R C - + C Vref + - -V Vo LED Square Wave Generator RC Integrator & Capacitor Sensor Buffer Peak Detector Comparator Display Jirachai, Murat Baylav Oil Level Low Indicator is On Page 40

41 DRINKING WATER SENSOR (DR. WATSEN) LAYOUT Temperature Sensor Conductivity (TDS) Sensor Free Chlorine Sensor Turbidity Sensor Biofilm Sensor Heidi Purrington, Jennifer Albrecht Page 41

42 DR. WATSEN PACKAGE DESIGN The microchip (4mm x 4mm) will be mounted on a PC board with voltage regulator chip and a few other components. Four wires will be needed (Power, Ground, Serial Communication) so the board will be soldered to a connector in a housing. Connector Signal Conditioning Electronics 1 ½ µp Housing PCB Sensor Chip Sealant Page 42

43 DR.WATSEN PACKAGE PROTOTYPE 1 ¼ Plastic Pipe (PVC or Other Material) Page 43

44 SIGNAL CONDITIONING FOR DR. WATSEN 5V Temperature R1 100K I R2 20K p n Gnd < Vout < 1V - 5V R1 10K Conductivity Gnd Gnd 10 mv I Gnd I Gnd R2 20K 5V TL081 20K Turbidity R3 10K R4 100K 5V TL081 p + IR LED Gnd + n Gnd + 5V TL081 1K Gnd 10K + TL081 Vout 0 to 1V Vout 0 to 1V Heidi Purrington Page 44

45 SIGNAL CONDITIONING PCB 4 1 Signal Conditioning Electronics MEMS Sensors Page 45

46 BLUETOOTH WIRELESS CAPACITANCE SENSOR RC Oscillator 2.4 khz RC Oscillator 5 Hz CTS 5 Hz Stop Bit 3 V TX SCLK RCLK RX 1 10-bit (Left) Shift Register 1 RTS Jirachai Getpreecharsawas Bluetooth Serial RF Link Start Bit 0 0 CCKEN RCO CCLK 0 8-bit Binary Counter 0 0 RCLK CCLR Internal Counter RC Oscillator Sensor Page 46

47 TEAM GALT Ivan MEMS Sensors and Integration Murat CMOS Circuit Design, Prototype Evaluation Heidi MEMS Sensors, Signal Processing Ellen CMOS Test and Evaluation Lynn Packaging of MEMS and Microsystems Ellen, Dr. Fuller, Ivan, Heidi, Murat Page 47

48 WHO IS JOHN GALT? John Galt is a fictitious character in Ayn Rand's 1957 classic novel Atlas Shrugged. He was an engineer who challenged his contemporaries to rise above mediocrity and to think outside the box. The question Who is John Galt? is posed to express frustration with being stuck with the commonplace, and the answer is really the spirit of challenging and rising above expectations. In the novel, John Galt invented a revolutionary new motor, which was powered by ambient static electricity. Team Galt is therefore an appropriate name for Dr. Fuller s MEMS research team at RIT. Integrating CMOS with MEMS is an enabling capability that will allow the team to develop new MEMS devices for a wide range of applications, and the concept of energy harvesting can be paralleled to the work of John Galt. Heidi Purrington Page 48

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