PTF GOLDMOS Field Effect Transistor 12 Watts, 1.99 GHz

Transcription

1 查询 PTF41 供应商 GOLDMOS Fild Effct Transistor Watts, 1.99 GHz Dscription Th is a watt GOLDMOS FET intndd for larg signal amplifir applications from 1. to 2. GHz. It oprats at 38% fficincy with db minimum gain. Nitrid surfac passivation and full gold mtallization nsur xcllnt dvic liftim and rliability. Guarantd Prformanc at 1.99 GHz, 26 V DS - Output Powr = Watts Min - Powr Gain = db Min Full Gold Mtallization Silicon Nitrid Passivatd Excllnt Thrmal Stability Back Sid Common Sourc % Lot Tracability Typical Output Powr vs. Input Powr 16 Output Powr (Watts) = 5 ma f = 199 MHz PTF Input Powr (Watts) Packag 2249 RF Spcifications (Guarantd) Charactristic Symbol Min Typ Max Units Gain (, P OUT = 3 W, = 5 ma, f = 193, 199 MHz) G ps db Output Powr at 1 db Comprssion (, = 5 ma, f = 199 MHz) P-1dB Watts Drain Efficincy (, P OUT = W, = 5 ma, f = 199 MHz) h 38 % Load Mismatch Tolranc (, P OUT = W, = 5 ma, f = 199 MHz Y :1 all phas angls at frquncy of tst) All publishd data at T CASE = 25 C unlss othrwis indicatd. 1

2 Elctrical Charactristics (Guarantd) Charactristic Conditions Symbol Min Typ Max Units Drain-Sourc Brakdown Voltag V GS = V, I D = 1.8 ma BV DSS 65 Volts Drain-Sourc Lakag Currnt V DS = 28 V, V GS = V I DSS 1. µa Gat On Voltag V DS, I D = 5 ma V GS(on) Volts Maximum Ratings Paramtr Symbol Valu Unit Drain-Sourc Voltag V DSS 65 Vdc Gat-Sourc Voltag V GS ±2 Vdc Oprating Junction Tmpratur T J 2 C Total Dvic Dissipation P D 58 Watts Abov 25 C drat by.33 W/ C Storag Tmpratur T STG 15 C Thrmal Rsistanc (T CASE = 7 C) R qjc 3. C/W Typical Prformanc P OUT, Gain & Efficincy (at P-1dB) vs. Frquncy Gain (db) & Output Powr (W) XWSXWÃ3RZHUÃ = 5 ma 35 Gain Frquncy (MHz) Efficincy Efficincy (%) x Gain (db) x Broadband Tst Fixtur Prformanc Gain Efficincy = 5 ma - 5 P OUT = W Rturn Loss Frquncy (MHz) 6 Efficincy (%) Rturn Loss (db) 2

3 Typical Prformanc (cont.) 13 Powr Gain vs. Output Powr 18 Output Powr vs. Supply Voltag Powr Gain (db) x = 5 ma = 7 ma = 35 ma f = 199 MHz Output Powr (Watts) = 5 ma f = 199 MHz 6 1 Output Powr (Watts) Supply Voltag (Volts) 3rd Ordr IMD vs. Output Powr Capacitanc vs. Supply Voltag IMD (dbc) x , = 5 ma f 1 = 199. MHz, f 2 = MHz Cds and Cgs (pf) x C gs C ds V GS = V f = 1 MHz C dg Cdg (pf) x Output Powr (Watts-PEP) Supply Voltag (Volts) Bias Voltag (V) Bias Voltag vs. Tmpratur Voltag nomalizd to 1. V Sris show currnt (A) Tmp. ( C) 3

4 Impdanc Data, P OUT = W, = 5 ma Z = 5 W Z Sourc D Z Load G Frquncy Z Sourc W Z Load W MHz R jx R jx S Typical Scattring Paramtrs (V DS, I D = 5 ma) f S11 S21 S S22 (MHz) Mag Ang Mag Ang Mag Ang Mag Ang

5 Tst Circuit Block Diagram for f = 2 GHz DUT LDMOS Transistor l1.141 l 2 GHz Microstrip 51.1 W l2.82 l 2 GHz Microstrip 51.1 W l3.41 l 2 GHz Microstrip 51.1 W l4.13 l 2 GHz Microstrip 8.77 W l5.169 l 2 GHz Microstrip 8.77 W l6.141 l 2 GHz Microstrip 51.1 W l7.269 l 2 GHz Microstrip 51.1 W C1,C7 uf, 35 V Capacitor, Digi-Ky PCS66 C2,C8.1uF, 5 V Capacitor, Digi-Ky PCC 3 BCT C3,C6, C9, C pf Capacitor, B C4 1. pf Capacitor, B 1R C5 1.4 pf Capacitor, B 1R4 C11.9 pf Capacitor, B R9 C 1.5 pf Capacitor, B 1R5 J1,J2 Connctor, SMA, Fmal, Panl Mount L1, L2 4 Turns, 2 AWG,. DIA I.D. L3 Frrit, 6mm Phillips 53/3/ R1, R2 Rsistor, 22ohmDigi-Ky 22ZTR R3 Rsistor, 1ohm, Ladd Digi-Ky 1.QBK Circuit Board.31" thick, r = 4., G2, AllidSignal, 2 oz. coppr Assmbly Diagram (not to scal) 5

6 Tst Circuit (cont.) Artwork (not to scal) Cas Outlin Spcifications Cas 2249 Ericsson Inc. Microlctronics Morgan Hill, CA 9537 USA GOLDMOS ( ) Unitd Stats Intrnational -mail: rfpowr@ricsson.com 6 Spcifications subjct to chang without notic. L3 Ericsson Inc All Rights Rsrvd EUS/KR Un Rv. C