Enhancement Mode N-Channel Power MOSFET
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1 SFG10R20xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC/DC convertor Invertors
2 General Description SFG10R20xF use advanced SFGMOS TM technology to provide low R DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Synchronous-rectification applications. V DS, min I D, pulse R DS(ON), VGS=10 V Q g 100 V 120 A 20 mω 19.8 nc Schematic and Package Information Schematic Diagram Pin Assignment Top View TO251 TO252 PDFN5*6 TO220 SFG10R20AF SFG10R20DF SFG10R20GF SFG10R20PF Absolute Maximum Ratings at T j=25 unless otherwise noted Parameter Symbol Value Unit Drain source voltage V DS 100 V Gate source voltage V GS ±20 V Continuous drain current 1), T C=25 I D 40 A Pulsed drain current 2), T C=25 I D, pulse 120 A Power dissipation 3), T C=25 P D 72 W Single pulsed avalanche energy 5) E AS 30 mj Operation and storage temperature T stg,t j -55 to 150 Oriental Semiconductor Copyright 2 / 12
3 Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-case R θjc 1.74 /W Thermal resistance, junction-ambient 4) R θja 62 /W Electrical Characteristics at T j=25 unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Test condition Drain-source breakdown voltage BV DSS 100 V V GS=0 V, I D=250 μa Gate threshold voltage V GS(th) V V DS=V GS, I D=250 μa Drain-source on-state resistance R DS(ON) mω V GS=10 V, I D=8 A Drain-source on-state resistance R DS(ON) 26 mω V GS=4.5 V, I D=6 A Gate-source leakage current I GSS 100 V GS=20 V na -100 V GS=-20 V Drain-source leakage current I DSS 1 μa V DS=100 V, V GS=0 V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input capacitance C iss pf Output capacitance C oss pf Reverse transfer capacitance C rss 4.1 pf Turn-on delay time t d(on) 17.8 ns Rise time t r 3.9 ns Turn-off delay time t d(off) 33.5 ns Fall time t f 3.2 ns V GS=0 V, V DS=50 V, ƒ=1 MHz V GS=10 V, V DS=50 V, R G=2.2 Ω, I D=10 A Oriental Semiconductor Copyright 3 / 12
4 Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total gate charge Q g 19.8 nc Gate-source charge Q gs 2.4 nc Gate-drain charge Q gd 5.3 nc Gate plateau voltage V plateau 3.2 V I D=8 A, V DS=50 V, V GS=10 V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward current I S 40 Pulsed source current I SP 120 A V GS<V th Diode forward voltage V SD 1.3 V I S=8 A, V GS=0 V Reverse recovery time t rr 50.2 ns Reverse recovery charge Q rr 95.1 nc Peak reverse recovery current I rrm 2.5 A I S=8 A, di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T a=25. 5) V DD=50 V, R G=25 Ω, L=0.3 mh, starting T j=25. Oriental Semiconductor Copyright 4 / 12
5 Electrical Characteristics Diagrams V 4 V V DS =10 V I D, Drain current (A) V 3V I D, Drain current(a) V GS = 2.0 V V DS, Drain-source voltage (V) V GS, Gate-source voltage(v) Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics C, Capacitance(pF) C iss C oss C rss V GS, Gate-source voltage(v) V DS, Drain-source voltage (V) Q g, Gate charge(nc) Figure 3, Typ. capacitances Figure 4, Typ. gate charge BV Dss, Drain-source voltage (V) R DS(on), On resistance (mω ) T j, Juntion temperature ( ) T j, Juntion temperature ( ) Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance Oriental Semiconductor Copyright 5 / 12
6 Is, Source current(a) R DS(ON), On-resistance (m ) V GS =4.5 V 18 V GS =10 V V SD, Source-drain voltage(v) I D, Drain current(a) Figure 7, Forward characteristic of body diode Figure 8, Drain-source on-state resistance 100 I D, Drain current(a) 10 1 R DS(ON) Limited 10 μs 100 μs 1 ms 10 ms DC V DS, Drain-source voltage(v) Figure 9, Safe operation area T C=25 Oriental Semiconductor Copyright 6 / 12
7 Test circuits and waveforms Figure 1, Gate charge test circuit & waveform Figure 2, Switching time test circuit & waveforms Figure 3, Unclamped inductive switching (UIS) test circuit & waveforms Figure 4, Diode reverse recovery test circuit & waveforms Oriental Semiconductor Copyright 7 / 12
8 Package Information Figure1, TO251 package outline dimension SYMBOL mm MIN NOM MAX A A b b b2' b c D D1 E REF E e H BSC L L L Oriental Semiconductor Copyright 8 / 12
9 Package Information Figure2, TO252 package outline dimension SYMBOL mm MIN NOM MAX A A A b b c D D1 E REF E e H BSC L2 L BSC L θ 0-8 Oriental Semiconductor Copyright 9 / 12
10 Package Information Figure3, PDFN5*6 package outline dimension Oriental Semiconductor Copyright 10 / 12
11 Package Information Figure4, TO220 package outline dimension SYMBOL mm MIN NOM MAX A A A b b c D D D E E e e1 H BSC 5.08 BSC L L ΦP Q Oriental Semiconductor Copyright 11 / 12
12 Ordering Information Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO TO Package Units/r Tapes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO PDFN5* Product Information Product Package Pb Free RoHS Halogen Free SFG10R20AF TO251 yes yes yes SFG10R20DF TO252 yes yes yes SFG10R20GF PDFN5*6 yes yes yes SFG10R20PF TO220 yes yes yes Oriental Semiconductor Copyright 12 / 12
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UNISONIC TECHNOLOGIES CO., LTD 2V, 9A N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such
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UNISONIC TECHNOLOGIES CO., LTD UTT200N03 200A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT200N03 is a N-channel MOSFET using UTC s advanced technology to provide customers with a minimum on-state
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UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
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General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter
More information600V Super-Junction Power MOSFET
600V Super-Junction Power MOSFET FEATURES Very low FOM R DS(on) Q g 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction
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UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET 20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 20NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics,
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
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UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET -80A, -60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80P06 is a P-channel power MOSFET using UTC s advanced technology to provide the
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UNISONIC TECHNOLOGIES CO., LTD 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
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UNISONIC TECHNOLOGIES CO., LTD 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC s proprietary,
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UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the
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UNISONIC TECHNOLOGIES CO., LTD 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS
More informationTO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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