Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C
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1 7MBRSC IGBT Modules PIM/Built-in converter with thyristor and brake (S series) / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motor Drive C and DC Servo Drive mplifier Uninterruptible Power Supply Maximum ratings and characteristics bsolute maximum ratings (Tc= C unless without specified) Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage CES GES ± IC Continuous Tc= C Collector current Tc= C ICP ms Tc= C 3 Tc= C -IC Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current PC CES GES IC device Continuous Tc= C Tc= C 7 ± W ICP ms Tc= C 3 Tc= C Collector power disspation Repetitive peak reverse voltage(diode) Repetitive peak off-state voltage Repetitive peak reverse voltage PC RRM DRM RRM device W verage on-state current Surge n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage verage output current Surge current (Non-Repetitive) IT() ITSM Tjw RRM IO IFSM Hz/6Hz sine wave Tj= C, ms half sine wave Hz/6Hz sine wave Tj= C, ms 4 6 C I t (Non-Repetitive) I t half sine wave s Junction temperature (except Thyristor) Tj + C Storage temperature Tstg -4 to + C Isolation between and copper base * iso C : minute C voltage between thermistor and others *3 C Mounting screw torque.7 * N m Converter Thyristor Brake Inverter * Recommendable value :.3 to.7 N m (M4) * ll s should be connected together when isolation test will be done. *3 Terminal and 9 should be connected together. Terminal to 7 and to 6 should be connected together and shorted to copper base.
2 7MBRSC Elecical characteristics (Tj= C unless otherwise specified) Item Symbol Condition Characteristics Unit Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES GE(th) CE=, GE= CE=, GE=± CE=, IC=m. 7.. µ n Collector-Emitter saturation voltage CE(sat) GE=, Ic= chip...6 Input capacitance Turn-on time Cies GE=, CE=, f=mhz CC=6 IC= pf µs Turn-off GE=±.4. RG=Ω..3 Forward on voltage F IF= chip Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current r ICES IGES IF= CES=, GE= CE=, GE=± 3 ns µ n Collector-Emitter saturation voltage CE(sat) IC=, GE= chip...6 Turn-on time CC=6 IC= µs Turn-off time GE=± RG=Ω Reverse current off-state current Reverse current Gate igger current Gate igger voltage On-state voltage IRRM IDM IRRM IGT GT TM R= DM=6 RM=6 D=6, IT= D=6, IT= ITM= chip µ m m m Forward on voltage FM IF= chip... Reverse current Resistance IRRM R R=6 T= C µ Ω Thermistor Converter Thyristor Brake Inverter B value Thermal resistance Characteristics B T= C T=/ C Item Symbol Condition Characteristics Unit Thermal resistance ( device ) Rth(j-c) Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Min. Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Thyristor C/W Converter Diode. With thermal compound. K
3 Characteristics (Representative) 7MBRSC Tj= C(typ.) Tj= C(typ.) GE= GE= 3 4 Collector - Emitter voltage : CE [ ] GE= (typ.) Tj= C Tj= C 3 4 Collector - Emitter voltage : CE [ ] Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= MHz, Tj= C Collector - Emitter voltage : CE [ ] 3 4 Collector - Emitter voltage : CE [ ] 6 4 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= C(typ.) Ic= Ic= Ic= Gate - Emitter voltage : GE [ ] Dynamic Gate charge (typ.) cc=6, Ic=, Tj= C Capacitance : Cies, Coes, Cres [ pf ] Cies Coes Collector - Emitter voltage : CE [ ] 6 4 Gate - Emitter voltage : GE [ ] Cres 3 3 Collector - Emitter voltage : CE [ ] 4 6 Gate charge : Qg [ nc ]
4 7MBRSC Switching time vs. Collector current (typ.) cc=6, GE=±, Rg=Ω, Tj= C Switching time vs. Collector current (typ.) cc=6, GE=±, Rg=Ω, Tj= C Switching time :,,, [ nsec ] Switching time :,,, [ nsec ] Switching time :,,, [ nsec ] Switching time vs. Gate resistance (typ.) cc=6, Ic=, GE=±, Tj= C Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) cc=6, Ic=, GE=±, Tj= C Switching loss : Eon, Eoff, Err [ mj/pulse ] 3 Switching loss vs. Collector current (typ.) cc=6, GE=±, Rg=Ω Eon( C) Eon( C) Eoff( C) Eoff( C) Err( C) Err( C) Reverse bias safe operating area +GE=, -GE<=, Rg>=Ω, Tj<= C Switching loss : Eon, Eoff, Err [ mj/pulse ] Eon 6 4 Eoff Err Gate resistance : Rg [ Ω ] 6 4 SCSO (non-repetitive pulse) RBSO (Repetitive pulse) Collector - Emitter voltage : CE [ ]
5 7MBRSC Forward current vs. Forward on voltage (typ.) 3 Reverse recovery characteristics (typ.) cc=6, GE=±, Rg=Ω Tj= C Tj= C r( C) Forward current : IF [ ] Reverse recovery current : Irr [ ] Reverse recovery time : r [ nsec ] r( C) Irr( C) Irr( C) Forward current : IF [ ] 3 4 Forward on voltage : F [ ] [ Converter ] Forward current vs. Forward on voltage (typ.) Tj= C Tj= C Forward on voltage : FM [ ] Transient thermal resistance Instantaneous on-state current [ ] Forward current : IF [ ] Instantaneous on-state voltage [ ] [ Thyristor ] On-state current vs. On-state voltage (typ.) Tjw= C Tjw= C [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ C/W ] FWD[Inverter] Conv. Diode IGBT [Inverter&Brake] Thyristor Resistance : R [ kω ]..... Pulse width : Pw [ sec ] Temperature [ C ]
6 7MBRSC Tj= C(typ.) Tj= C(typ.) GE= GE= 3 4 Collector - Emitter voltage : CE [ ] GE= (typ.) Tj= C Tj= C 3 4 Collector - Emitter voltage : CE [ ] Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= MHz, Tj= C Collector - Emitter voltage : CE [ ] 3 4 Collector - Emitter voltage : CE [ ] 6 4 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= C(typ.) Ic= Ic= Ic= Gate - Emitter voltage : GE [ ] Dynamic Gate charge (typ.) cc=6, Ic=, Tj= C Capacitance : Cies, Coes, Cres [ pf ] Cies Coes Collector - Emitter voltage : CE [ ] 6 4 Gate - Emitter voltage : GE [ ] Cres 3 3 Collector - Emitter voltage : CE [ ] 4 6 Gate charge : Qg [ nc ]
7 7MBRSC Outline Drawings, mm Marking : White Marking : White Equivalent Circuit Schematic [ Converter ] [ Thyristor ] [ Thermistor ] (P) 6 (P) (Gu) (Gv ) 6 (Gw) 9 (R) (S) 3(T) 7(B) 9(Eu) 7(Ev ) 4(U) (Ew) () 6(W) 4(Gb) 3(Gx) (Gy ) (Gz) 3(N) 4(N) (En)
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