Mm-Wave Silicon Sensors. and Active Tags

Transcription

1 Mm-Wave Silicon Sensors and Active Tags Sorin Voinigescu November 21,

2 Outline Introduction Range (distance) sensors Passive imaging sensors Active 80-GHz tag Technology options Conclusions 2

3 Why mm-wave sensors? Work in hostile and poor visibility environments where optical sensors fail smoke, toxic gases, fire night, fog, rain, heavy snow, mud Higher resolution (compared to cellular/wifi) < 5mm 3

4 Mm-wave sensor classification Range (also altimeters) and velocity sensors active imagers transmit and receive function Low noise broadband direct detection receivers passive imagers (total power radiometers) Tags Backscatterers passive (no gain, just detection) active (detection and amplification) 4

5 Applications Industrial range and Doppler sensors Active/passive imagers for security and remote sensing Autonomous navigation 5

6 New Applications Autonomous robots Autonomous drone swarms Toy helicopters IoT tags monitor every atom in the universe sell billions of tags and RF transceivers put data cloud in space melt the universe? ;-) 6

7 Automotive Radar An FMCW Doppler radar = a direct conversion radio Tx ANT VCO DSP hostile channel PA BBM Rx ANT BBA A/D LNA MIX Link Budget Equation 2 PRX = PTX G TX GRX r is the radar cross section of the target in m2. 7

8 FMCW radar waveforms f TXτ Stationary target f fosc fosc f T RX 0 t t f TXτ 1 c f T r= c = 2 2 f OSC Velocity Moving target v= f fosc fosc T f t c fd 2 f OSC fd = Doppler shift c = speed of light RX 0 1 Range r= c 2 t 8

9 LNA TS=TR+TA frf TA+TB TS=TR+TA Measure TR Calibrate TREF flf = LS G, TLNA LNA frf VO TA = antenna noise temperature TR = receiver noise temperature TS = system noise temperature R = detector responsivity [V/W] NEP = noise equivalent power 1 2 R, NEP τ Integ. TR τ Integ. G, TLNA R, NEP Detect. Detect TA+TB Detect. Detect Low noise passive imagers flf = V o= ktb f RF kt S f RF G R VO G TMIN= 2 T A T R G f RF 9 2

10 Mm-Wave Active Tag Reflect signal from basestation back to basestation with ID Link budget similar to radar Requirements Low-power, ideally self-sufficient Very small form factor Long range operation (d > few meters) 10

11 Outline Introduction Distance (Range) Sensors Passive imaging sensor at D-Band Active 80-GHz tag Technology options Conclusions 11

12 FMCW distance sensor at 122 GHz Bosch funded project [M. Girma et al. EuMIC 2012] 12

13 Layout and Packaging Chip: 2.2mm 2.6mm Package: 7mm mm 130-nm BiCMOS9MW: SiGe HBT ft= 230 GHz, fmax = 280 GHz 13

14 Distance Test with Corner Reflector 14

15 150-GHz monostatic single-chip sensor 890 mw with both prescalers on from 1.8V and 1.2V supplies Built-in self-test [I. Sarkas et al.csics 2012] 15

16 Layout and performance summary Tuning range GHz 2.6mmx2.3mm NF<10 db, Pout >-6 dbm. PN < -83 dbc/hz at 1MHz 130nm SiGe BiCMOS 230/280GHz Block Count Power (mw) VCO Divider chain LO dist TX RX Total

17 145 GHz Transceiver die: VCO range 152 Oscillation Frequency (GHz) 151 Coarse = 1.4V Coarse = 0.8V Coarse = 0V GHz tuning range PDC = 72 mw Fine Control (V)

18 125-GHz Transceiver die: VCO range GHz tuning range 18

19 Receiver gain and noise figure Gain - DSB Noise Figure (db) Gain NF LO Frequency (GHz) db gain, 23 db of gain control in LNA Low noise figure: dB 19

20 Transmitter gain/pout control TX output power states measured without external mm-wave equipment 20 20

21 Measured output power -3-4 TX Power (dbm) -5 TX detector thru outputantenna port terminated -6-7 Antenna port open Antenna port (after 6dB coupler) Frequency (GHz) Power at antenna port measured with ELVA power sensor On-chip and external measurements track very well 21

22 LO detector power 22

23 Impedance Tuner: Reference Phase and Amplitude Change 23

24 Demo in Karlsruhe May

25 65-GHz multi-channel range sensor 2-IQ receivers with differential transmitter 55-nm SiGe BiCMOS ft= 320 GHz, fmax = 380 GHz 1.1/1.2/1.8V supplies, 24 mw 25

26 Outline Introduction Distance (Range) Sensors Passive imaging sensor at D-Band Active 80-GHz tag Technology options Conclusions 26

27 165 GHz passive imaging receiver SiGe HBT process: ft=290 GHz, fmax = 325 GHz PD = 95 mw LNA gain > 36 db, NF <8 db NEP < 15 fw/ HZ NEDT < 0.4 K at 3 ms. [E. Dacquay et al. IEEE Trans. MTT, March 2012] 27

28 Layout 765 m m 28

29 Output noise spectra, 1/f noise corner 29

30 Measured Responsivity and NETD slope=8 V/K 30

31 Outline Introduction Distance (Range) Sensors Passive imaging sensor at D-Band Active 80-GHz tag Technology options Conclusions 31

32 mm-wave active tag Frequency: GHz G > 30 db NF < 7 db Si < -62 dbm PD < 3 mw Range > 10m when polled by +10dBm BS Wake-up Detector Funded by Robert Bosch GmbH. 0.8mm 0.55mm 32

33 Outline Introduction Distance (Range) Sensors Passive imaging sensor at D-Band Active 80-GHz tag Technology options Conclusions 33

34 n MOSFET scaling Slide 34

35 SiGe HBT Scaling Both ft and fmax continue to scale predictably 35

36 Conclusions First gen of mm-wave sensors (>1W) New gen (<10mW) Technology requirements Outdoors: -50 to+100 C G/mA, NF/mA, PN/mA Small die & package <5mm2, 10 billion parts per year 36

37 Credits Graduate students Collaborators Yannis Sarkas Dr. Juergen Hasch Andreea Balteanu Dr. Pascal Chevalier Alex Tomkins Prof. Thomas Zwick Eric Dacquay Mekdes Girma Sadegh Dadash Stefan Beer Guy Alter NSERC, Robert Bosch GmbH for funding STMicroelectronics for chip donations Jaro Pristupa and CMC for CAD and support 37