NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS(1) ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
|
|
- Margery Morton
- 5 years ago
- Views:
Transcription
1 SEMIONDUTOR TEHNIL DT NPN Silicon *Motorola Preferred Device OLLETOR 3 2 BSE 1 EMITTER MXIMUM RTINGS Rating Symbol Value Unit ollector Emitter Voltage VEO 40 Vdc ollector Base Voltage VBO 60 Vdc Emitter Base Voltage VEBO 6.0 Vdc ollector urrent ontinuous I 200 mdc Total Device T = 25 Derate above 25 PD mw mw/ SE 29 04, STYLE 1 TO 92 (TO 226) Total Device T = 25 Derate above 25 PD Watts mw/ Operating and Storage unction Temperature Range THERML HRTERISTIS(1) T, Tstg 55 to +150 haracteristic Symbol Max Unit Thermal Resistance, unction to mbient R 200 /W Thermal Resistance, unction to ase R 83.3 /W ELETRIL HRTERISTIS (T = 25 unless otherwise noted) haracteristic Symbol Min Max Unit OFF HRTERISTIS ollector Emitter Breakdown Voltage (2) V(BR)EO 40 Vdc (I = 1.0 mdc, IB = 0) ollector Base Breakdown Voltage (I = 10 dc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 dc, I = 0) Base utoff urrent (VE = 30 Vdc, VEB = 3.0 Vdc) ollector utoff urrent (VE = 30 Vdc, VEB = 3.0 Vdc) V(BR)BO 60 Vdc V(BR)EBO 6.0 Vdc IBL 50 ndc IEX 50 ndc 1. Indicates Data in addition to EDE Requirements. 2. Pulse Test: Pulse Width 300 s; Duty ycle 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 2 3
2 ELETRIL HRTERISTIS (T = 25 unless otherwise noted) (ontinued) haracteristic Symbol Min Max Unit ON HRTERISTIS D urrent Gain(1) (I = 0.1 mdc, VE = 1.0 Vdc) 2N3903 2N3904 hfe (I = 1.0 mdc, VE = 1.0 Vdc) 2N3903 2N (I = 10 mdc, VE = 1.0 Vdc) 2N3903 2N (I = 50 mdc, VE = 1.0 Vdc) 2N3903 2N (I = 100 mdc, VE = 1.0 Vdc) 2N3903 2N ollector Emitter Saturation Voltage(1) (I = 10 mdc, IB = 1.0 mdc) (I = 50 mdc, IB = 5.0 mdc Base Emitter Saturation Voltage(1) (I = 10 mdc, IB = 1.0 mdc) (I = 50 mdc, IB = 5.0 mdc) SMLL SIGNL HRTERISTIS urrent Gain Bandwidth Product (I = 10 mdc, VE = 20 Vdc, f = 100 MHz) Output apacitance (VB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input apacitance (VEB = 0.5 Vdc, I = 0, f = 1.0 MHz) Input Impedance (I = 1.0 mdc, VE = 10 Vdc, f = 1.0 khz) Voltage Feedback Ratio (I = 1.0 mdc, VE = 10 Vdc, f = 1.0 khz) Small Signal urrent Gain (I = 1.0 mdc, VE = 10 Vdc, f = 1.0 khz) Output dmittance (I = 1.0 mdc, VE = 10 Vdc, f = 1.0 khz) 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 VE(sat) VBE(sat) ft Vdc Vdc MHz obo 4.0 pf ibo 8.0 pf hie hre hfe k Ω X 10 4 hoe mhos Noise Figure (I = 100 dc, VE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 khz) SWITHING HRTERISTIS 2N3903 2N3904 Delay Time (V = 3.0 Vdc, VBE = 0.5 Vdc, td 35 ns Rise Time I = 10 mdc, IB1 = 1.0 mdc) tr 35 ns Storage Time (V = 3.0 Vdc, I = 10 mdc, 2N3903 IB1 = IB2 = 1.0 mdc) 2N3904 NF ts Fall Time tf 50 ns 1. Pulse Test: Pulse Width 300 s; Duty ycle 2.0% db ns 2 4
3 DUTY YLE = 2% 300 ns V +3 V < t1 < 500 s DUTY YLE = 2% t V +3 V V < 1 ns 10 k S < 4 pf* 0 10 k 1N916 S < 4 pf* 9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test ircuit Figure 2. Storage and Fall Time Equivalent Test ircuit TYPIL TRNSIENT HRTERISTIS T = 25 T = 125 PITNE (pf) ibo obo REVERSE BIS VOLTGE (VOLTS) Figure 3. apacitance Q, HRGE (p) V = 40 V I/IB = 10 QT I, OLLETOR URRENT (m) Figure 4. harge Data Q 2 5
4 f I/IB = V = 40 V I/IB = 10 TIME (ns) V 10 7 VOB = 0 V 2.0 V I, OLLETOR URRENT (m) Figure 5. Turn On Time V = 3.0 V 40 V t, RISE TIME (ns) r I, OLLETOR URRENT (m) Figure 6. Rise Time t, STORGE TIME (ns) s I/IB = 20 I/IB = 10 t s = ts 1/8 tf IB1 = IB2 I/IB = 20 I/IB = 10 t, FLL TIME (ns) I/IB = 10 I/IB = 20 V = 40 V IB1 = IB I, OLLETOR URRENT (m) Figure 7. Storage Time I, OLLETOR URRENT (m) Figure 8. Fall Time TYPIL UDIO SMLL SIGNL HRTERISTIS NOISE FIGURE VRITIONS (VE = 5.0 Vdc, T = 25, Bandwidth = 1.0 Hz) NF, NOISE FIGURE (db) SOURE RESISTNE = 200 I = 1.0 m SOURE RESISTNE = 200 I = 0.5 m SOURE RESISTNE = 1.0 k I = 50 NF, NOISE FIGURE (db) f = 1.0 khz I = 0.5 m I = 1.0 m I = 50 I = SOURE RESISTNE = 500 I = f, FREQUENY (khz) Figure RS, SOURE RESISTNE (k OHMS) Figure
5 h PRMETERS (VE = 10 Vdc, f = 1.0 khz, T = 25 ) h fe, URRENT GIN I, OLLETOR URRENT (m) Figure 11. urrent Gain h oe, OUTPUT DMITTNE ( mhos) I, OLLETOR URRENT (m) Figure 12. Output dmittance h ie, INPUT IMPEDNE (k OHMS) h, VOLTGE FEEDB RTIO (X 10 4 re ) I, OLLETOR URRENT (m) I, OLLETOR URRENT (m) 10 Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio TYPIL STTI HRTERISTIS h FE, D URRENT GIN (NORMLIZED) T = VE = 1.0 V I, OLLETOR URRENT (m) Figure 15. D urrent Gain 2 7
6 V E, OLLETOR EMITTER VOLTGE (VOLTS) I = 1.0 m T = m 30 m 100 m IB, BSE URRENT (m) Figure 16. ollector Saturation Region T = 25 I/IB = TO +125 V, VOLTGE (VOLTS) I/IB =10 VE =1.0 V OEFFIIENT (mv/ ) V FOR VE(sat) VB FOR VBE(sat) 55 TO TO TO I, OLLETOR URRENT (m) I, OLLETOR URRENT (m) 200 Figure 17. ON Voltages Figure 18. Temperature oefficients 2 8
7 EMBOSSED TPE ND REEL SOT-23, S-59, S-70/SOT-323, S 90/SOT 416, SOT-223 and SO-16 packages are available only in Tape and Reel. Use the appropriate suffix indicated below to order any of the SOT-23, S-59, S-70/SOT-323, SOT-223 and SO-16 packages. (See Section 6 on Packaging for additional information). SOT-23: S-59: S-70/ SOT-323: SOT-223: SO-16: available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 12 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/1000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/4000 unit reel. available in 16 mm Tape and Reel dd an R1 suffix to the device title to order the 7 inch/500 unit reel. dd an R2 suffix to the device title to order the 13 inch/2500 unit reel. RDIL TPE IN FN FOLD BOX OR REEL TO-92 packages are available in both bulk shipments and in Radial Tape in Fan Fold Boxes or Reels. Fan Fold Boxes and Radial Tape Reel are the best methods for capturing devices for automatic insertion in printed circuit boards. TO-92: available in Fan Fold Box dd an RLR suffix and the appropriate Style code* to the device title to order the Fan Fold box. available in 365 mm Radial Tape Reel dd an RLR suffix and the appropriate Style code* to the device title to order the Radial Tape Reel. *Refer to Section 6 on Packaging for Style code characters and additional information on ordering *requirements. DEVIE MRINGS/DTE ODE HRTERS SOT-23, S-59, S-70/SOT-323, and the S 90/SOT 416 packages have a device marking and a date code etched on the device. The generic example below depicts both the device marking and a representation of the date code that appears on the S-70/SOT-323, S-59 and SOT-23 packages. BD The D represents a smaller alpha digit Date ode. The Date ode indicates the actual month in which the part was manufactured. 2 2
8 Tape and Reel Specifications and Packaging Specifications Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure cavity for the product when sealed with the peel back cover tape. Two Reel Sizes vailable (7 and 13 ) Used for utomatic Pick and Place Feed Systems Minimizes Product Handling EI 481, 1, 2 SOD 123, S 59, S 70/SOT 323, S 70ML/SOT 363, SOT 23, TSOP 6, in 8 mm Tape SOT 223 in 12 mm Tape SO 14, SO 16 in 16 mm Tape Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual reels have a finite number of devices depending on the type of product contained in the tape. lso note the minimum lot size is one full reel for each line item, and orders are required to be in increments of the single reel quantity. SOD mm S 59, S 70/SOT 323, SOT 23 8 mm S 70ML/SOT 363, TSOP 6 T1 ORIENTTION 8 mm SOT mm SO 14, mm S 70ML/SOT 363 T2 ORIENTTION 8 mm DIRETION OF FEED Package EMBOSSED TPE ND REEL ORDERING INFORMTION Tape Width (mm) Pitch mm (inch) Reel Size mm (inch) Devices Per Reel and Minimum Order Quantity S ± 0.1 (.157 ±.004) 178 (7) 3,000 T1 S 70/SOT ± 0.1 (.157 ±.004) 178 (7) 3,000 T (13) 10,000 T3 SO ± 0.1 (.315 ±.004) 178 (7) 500 R (13) 2,500 R2 SO ± 0.1 (.315 ±.004) 178 (7) 500 R (13) 2,500 R2 SOD ± 0.1 (.157 ±.004) 178 (7) 3,000 T (13) 10,000 T3 SOT ± 0.1 (.157 ±.004) 178 (7) 3,000 T (13) 10,000 T3 SOT ± 0.1 (.315 ±.004) 178 (7) 1,000 T (13) 4,000 T3 S 70ML/SOT ± 0.1 (.157 ±.004) 178 (7) 3,000 T (7) 3,000 T2 TSOP ± 0.1 (.157 ±.004) 178 (7) 3,000 T1 Device Suffix Tape and Reel Specifications 6 2
9 EMBOSSED TPE ND REEL DT FOR DISRETES RRIER TPE SPEIFITIONS t D P0 P2 10 Pitches umulative Tolerance on Tape ± 0.2 mm (± ) Top over Tape 0 E F W B1 0 B0 See Note 1 P Embossment enter Lines of avity D1 For omponents 2.0 mm x 1.2 mm and Larger For Machine Reference Only Including Draft and RDII oncentric round B0 User Direction of Feed 10 Bending Radius Maximum omponent Rotation R Min Tape and omponents Shall Pass round Radius R Without Damage Bar ode Label 100 mm (3.937 ) Embossed arrier 1 mm Max * Top over Tape Thickness (t1) 0.10 mm (.004 ) Max. Embossment Typical omponent avity enter Line Tape Typical omponent enter Line 1 mm (.039 ) Max 250 mm (9.843 ) amber (Top View) llowable amber To Be 1 mm/100 mm Nonaccumulative Over 250 mm DIMENSIONS Tape Size B 1 Max D D 1 E F P 0 P 2 R Min T Max W Max 8mm 4.55 mm (.179 ) 12 mm 8.2 mm (.323 ) 16 mm 12.1 mm (.476 ) 24 mm 20.1 mm (.791 ) mm 0.0 ( ) 1.0 Min (.039 ) 1.5 mm Min (.060 ) 1.75 ± 0.1mm (.069 ±.004 ) 3.5 ± 0.05 mm (.138 ±.002 ) 5.5 ± 0.05 mm (.217 ±.002 ) 7.5 ± 0.10 mm (.295 ±.004 ) 11.5 ± 0.1 mm (.453 ±.004 ) 2.4 mm Max (.094 ) 6.4 mm Max (.252 ) 7.9 mm Max (.311 ) 11.9 mm Max (.468 ) 4.0 ± 0.1mm (.157 ±.004 ) 2.0 ± 0.1mm (.079 ±.002 ) 25 mm (.98 ) 30 mm (1.18 ) 0.6mm (.024 ) 8.3 mm (.327 ) 12 ±.30 mm (.470 ±.012 ) Metric dimensions govern English are in parentheses for reference only. NOTE 1: 0, B 0, and 0 are determined by component size. The clearance between the components and the cavity must be within.05 mm min. to.50 mm max., NOTE 1: the component cannot rotate more than 10 within the determined cavity. NOTE 2: If B 1 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders. NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg mm (.642 ) 24.3 mm (.957 ) Tape and Reel Specifications 6 3
10 EMBOSSED TPE ND REEL DT FOR DISRETES T Max Outside Dimension Measured at Edge 1.5 mm Min (.06 ) 13.0 mm ± 0.5 mm (.512 ±.002 ) 20.2 mm Min (.795 ) 50 mm Min (1.969 ) Full Radius G Inside Dimension Measured Near Hub Size Max G T Max 8 mm 330 mm ( ) 12 mm 330 mm ( ) 16 mm 360 mm ( ) 24 mm 360 mm ( ) 8.4 mm mm, 0.0 ( , 0.00) 12.4 mm mm, 0.0 ( , 0.00) 16.4 mm mm, 0.0 ( , 0.00) 24.4 mm mm, 0.0 ( , 0.00) 14.4 mm (.56 ) 18.4 mm (.72 ) 22.4 mm (.882 ) 30.4 mm (1.197 ) Reel Dimensions Metric Dimensions Govern English are in parentheses for reference only Tape and Reel Specifications 6 4
11 TO 92 EI, IE, EI Radial Tape in Fan Fold Box or On Reel Radial tape in fan fold box or on reel of the reliable TO 92 package are the best methods of capturing devices for automatic insertion in printed circuit boards. These methods of taping are compatible with various equipment for active and passive component insertion. vailable in Fan Fold Box vailable on 365 mm Reels ccommodates ll Standard Inserters llows Flexible ircuit Board Layout 2.5 mm Pin Spacing for Soldering EI 468, IE 286 2, EI R1008B TO 92 RDIL TPE IN FN FOLD BOX OR ON REEL Ordering Notes: When ordering radial tape in fan fold box or on reel, specify the style per Figures 3 through 8. dd the suffix RLR and Style to the device title, i.e. MPS3904RLR. This will be a standard MPS3904 radial taped and supplied on a reel per Figure 9. Fan Fold Box Information Order in increments of Reel Information Order in increments of US/European Suffix onversions US RLR RLRE RLRM EUROPE RL RL1 ZL1 Packaging Specifications 6 5
12 TO 92 EI RDIL TPE IN FN FOLD BOX OR ON REEL H2 H2 H2B H2B H W2 H4 H5 L L1 H1 W1 W T1 T F1 F2 T2 P2 P2 D P1 P Figure 1. Device Positioning on Tape Specification Inches Millimeter Symbol Item Min Max Min Max D Tape Feedhole Diameter D2 omponent Lead Thickness Dimension F1, F2 omponent Lead Pitch H Bottom of omponent to Seating Plane H1 Feedhole Location H2 Deflection Left or Right H2B Deflection Front or Rear H4 Feedhole to Bottom of omponent H5 Feedhole to Seating Plane L Defective Unit lipped Dimension L1 Lead Wire Enclosure P Feedhole Pitch P1 Feedhole enter to enter Lead P2 First Lead Spacing Dimension T dhesive Tape Thickness T1 Overall Taped Package Thickness T2 arrier Strip Thickness W arrier Strip Width W1 dhesive Tape Width W2 dhesive Tape Position Maximum alignment deviation between leads not to be greater than 0.2 mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 3. omponent lead to tape adhesion must meet the pull test requirements established in Figures 5, 6 and Maximum non cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than 1 consecutive missing component is permitted. 7. tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes. Packaging Specifications 6 6
13 TO 92 EI RDIL TPE IN FN FOLD BOX OR ON REEL FN FOLD BOX STYLES DHESIVE TPE ON TOP SIDE FLT SIDE ÇÇ Ç ÇÇ RRIER STRIP DHESIVE TPE ON TOP SIDE ROUNDED SIDE RRIER STRIP 330 mm 13 MX 252 mm 9.92 MX FLT SIDE OF TRNSISTOR ND DHESIVE TPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRNSISTOR ND DHESIVE TPE VISIBLE. Style P fan fold box is equivalent to styles and B of reel pack dependent on feed orientation from box. 58 mm 2.28 MX Figure 2. Style M Figure 3. Style P Figure 4. Fan Fold Box Dimensions DHESION PULL TESTS 500 GRM PULL FORE 100 GRM PULL FORE 70 GRM PULL FORE 16 mm 16 mm HOLDING FIXTURE The component shall not pull free with a 300 gram load applied to the leads for 3 ± 1 second. HOLDING FIXTURE The component shall not pull free with a 70 gram load applied to the leads for 3 ± 1 second. HOLDING FIXTURE There shall be no deviation in the leads and no component leads shall be pulled free of the tape with a 500 gram load applied to the component body for 3 ± 1 second. Figure 5. Test #1 Figure 6. Test #2 Figure 7. Test #3 Packaging Specifications 6 7
14 TO 92 EI RDIL TPE IN FN FOLD BOX OR ON REEL REEL STYLES RBOR HOLE DI. 30.5mm ± 0.25mm ORE DI. 82mm ± 1mm MRING NOTE HUB REESS 76.2mm ± 1mm REESS DEPTH 9.5mm MIN 365mm + 3, 0mm 48 mm MX 38.1mm ± 1mm Material used must not cause deterioration of components or degrade lead solderability Figure 8. Reel Specifications DHESIVE TPE ON REVERSE SIDE RRIER STRIP DHESIVE TPE ROUNDED SIDE RRIER STRIP FLT SIDE FEED FEED Rounded side of transistor and adhesive tape visible. Figure 9. Style Flat side of transistor and carrier strip visible (adhesive tape on reverse side). Figure 10. Style B DHESIVE TPE ON REVERSE SIDE RRIER STRIP DHESIVE TPE FLT SIDE RRIER STRIP ROUNDED SIDE FEED FEED Flat side of transistor and adhesive tape visible. Figure 11. Style E Rounded side of transistor and carrier strip visible (adhesive tape on reverse side). Figure 12. Style F Packaging Specifications 6 8
15 INFORMTION FOR USING SURFE MOUNT PGES REOMMENDED FOOTPRINTS FOR SURFE MOUNTED PPLITIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. POWER DISSIPTION FOR SURFE MOUNT DEVIE The power dissipation for a surface mount device is a function of the drain/collector pad size. These can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T(max), the maximum rated junction temperature of the die, Rθ, the thermal resistance from the device junction to ambient, and the operating temperature, T. Using the values provided on the data sheet, PD can be calculated as follows: PD = T(max) T Rθ The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature T of 25, one can calculate the power dissipation of the device. For example, for a SOT 223 device, PD is calculated as follows. PD = /W = 800 milliwatts The 156 /W for the SOT 223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 800 milliwatts. There are other alternatives to achieving higher power dissipation from the surface mount packages. One is to increase the area of the drain/collector pad. By increasing the area of the drain/collector pad, the power dissipation can be increased. lthough the power dissipation can almost be doubled with this method, area is taken up on the printed circuit board which can defeat the purpose of using surface mount technology. For example, a graph of Rθ versus drain pad area is shown in Figure 1. nother alternative would be to use a ceramic substrate or an aluminum core board such as Thermal lad. Using a board material such as Thermal lad, an aluminum core board, the power dissipation can be doubled using the same footprint. R θ, THERML RESISTNE, UNTION TO MBIENT ( /W) Board Material = G 10/FR 4, 2 oz opper 0.8 Watts T = Watts* 1.5 Watts *Mounted on the DP footprint , RE (SQURE INHES) Figure 1. Thermal Resistance versus Drain Pad rea for the SOT 223 Package (Typical) SOLDER STENIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically inches thick and may be made of brass or stainless steel. For packages such as the SOT 23, S 59, S 70/SOT 323, S 90/SOT 416, SOD 123, SOT 223, SOT 363, SO 14, SO 16, and TSOP 6 packages, the stencil opening should be the same as the pad size or a 1:1 registration. Surface Mount Information 7 10
16 The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. lways preheat the device. The delta temperature between the preheat and soldering should be 100 or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating profile for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 2 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the SOLDERING PREUTIONS TYPIL SOLDER HETING PROFILE The soldering temperature and time should not exceed 260 for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient shall be 5 or less. fter soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used since the use of forced cooling will increase the temperature gradient and will result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. 200 STEP 1 PREHET ZONE 1 RMP STEP 2 VENT SO STEP 3 HETING ZONES 2 & 5 RMP DESIRED URVE FOR HIGH MSS SSEMBLIES STEP 4 HETING ZONES 3 & 6 SO 160 STEP 5 HETING ZONES 4 & 7 SPIE 170 STEP 6 VENT STEP 7 OOLING 205 TO 219 PE T SOLDER OINT SOLDER IS LIQUID FOR 40 TO 80 SEONDS (DEPENDING ON MSS OF SSEMBLY) 50 DESIRED URVE FOR LOW MSS SSEMBLIES TIME (3 TO 7 MINUTES TOTL) TMX Figure 2. Typical Solder Heating Profile Surface Mount Information 7 11
17 Footprints for Soldering inches mm inches mm S 59 SOT inches mm 0.5 min. (3x) 0.5 min. (3x) S 70/SOT 323 SOT 416/S inches mm inches mm SOT 223 SO 14, SO 16 Surface Mount Information 7 12
18 0.5 mm (min) É É É mm inches 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm SOD 123 SOT 363 (S 70 6 LED) TSOP inches mm Surface Mount Information 7 13
19 Package Outline Dimensions Dimensions are in inches unless otherwise noted. SETING PLNE R X X 1 H V N F G P N L B D SETION X X 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: INH. 3. ONTOUR OF PGE BEYOND DIMENSION R IS UNONTROLLED. 4. DIMENSION F PPLIES BETWEEN P ND L. DIMENSION D ND PPLY BETWEEN L ND MINIMUM. LED DIMENSION IS UNONTROLLED IN P ND BEYOND DIMENSION MINIMUM. INHES MILLIMETERS B D F G H L N P R V STYLE 1: PIN 1. EMITTER 2. BSE 3. OLLETOR STYLE 2: PIN 1. BSE 2. EMITTER 3. OLLETOR STYLE 3: PIN 1. NODE 2. NODE 3. THODE STYLE 4: PIN 1. THODE 2. THODE 3. NODE STYLE 5: PIN 1. DRIN 2. SOURE 3. GTE STYLE 7: PIN 1. SOURE 2. DRIN 3. GTE STYLE 14: PIN 1. EMITTER 2. OLLETOR 3. BSE STYLE 15: PIN 1. NODE 1 2. THODE 3. NODE 2 STYLE 17: PIN 1. OLLETOR 2. BSE 3. EMITTER STYLE 21: PIN 1. OLLETOR 2. EMITTER 3. BSE STYLE 22: PIN 1. SOURE 2. GTE 3. DRIN STYLE 30: PIN 1. DRIN 2. GTE 3. SOURE SE (TO 226) TO 92 PLSTI R F X X H V N G P N L B SETING PLNE D SETION X X 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: INH. 3. ONTOUR OF PGE BEYOND DIMENSION R IS UNONTROLLED. 4. DIMENSION F PPLIES BETWEEN P ND L. DIMENSIONS D ND PPLY BETWEEN L ND MIMIMUM. LED DIMENSION IS UNONTROLLED IN P ND BEYOND DIMENSION MINIMUM. INHES MILLIMETERS B D F G H L N P R V STYLE 1: PIN 1. EMITTER 2. BSE 3. OLLETOR STYLE 14: PIN 1. EMITTER 2. OLLETOR 3. BSE STYLE 22: PIN 1. SOURE 2. GTE 3. DRIN SE (TO 226E) TO 92 1 WTT PLSTI Package Outline Dimensions 8 2
20 PGE OUTLINE DIMENSIONS (continued) B D F 1. PGE ONTOUR OPTIONL WITHIN DI B ND LENGTH. HET SLUGS, IF NY, SHLL BE INLUDED WITHIN THIS YLINDER, BUT SHLL NOT BE SUBET TO THE MIN LIMIT OF DI B. 2. LED DI NOT ONTROLLED IN ZONES F, TO LLOW FOR FLSH, LED FINISH BUILDUP, ND MINOR IRREGULRITIES OTHER THN HET SLUGS. F MILLIMETERS INHES B D F ll EDE dimensions and notes apply. SE (DO 204) DO 7 SETING PLNE P R F D X X H 1 2 G V N L B D ÉÉ SETION X X 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: INH. 3. ONTOUR OF PGE BEYOND ZONE R IS UNONTROLLED. 4. DIMENSION F PPLIES BETWEEN P ND L. DIMENSIONS D ND PPLY BETWEEN L ND MINIMUM. LED DIMENSION IS UNONTROLLED IN P ND BEYOND DIM MINIMUM. INHES MILLIMETERS B D F G BS 1.27 BS H BS 3.54 BS L N P R V N STYLE 1: PIN 1. NODE 2. THODE SE (T0 226) TO 92 PLSTI Package Outline Dimensions 8 3
21 PGE OUTLINE DIMENSIONS (continued) L 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: INH. 3. MXIUMUM LED THINESS INLUDES LED FINISH THINESS. MINIMUM LED THINESS IS THE MINIMUM THINESS OF BSE MTERIL. V D G H B S INHES MILLIMETERS B D G H L S V STYLE 6: PIN 1. BSE 2. EMITTER 3. OLLETOR STYLE 8: PIN 1. NODE 2. NO ONNETION 3. THODE STYLE 9: PIN 1. NODE 2. NODE 3. THODE STYLE 10: PIN 1. DRIN 2. SOURE 3. GTE STYLE 11: PIN 1. NODE 2. THODE 3. THODE NODE STYLE 12: PIN 1. THODE 2. THODE 3. NODE STYLE 18: PIN 1. NO ONNETION 2. THODE 3. NODE STYLE 19: PIN 1. THODE 2. NODE 3. THODE NODE STYLE 21: PIN 1. GTE 2. SOURE 3. DRIN SE (TO 236B) SOT 23 PLSTI L 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: MILLIMETER. S 2 3 G 1 D B MILLIMETERS INHES B D G H L S H STYLE 1: PIN 1. EMITTER 2. BSE 3. OLLETOR STYLE 2: PIN 1. N.. 2. NODE 3. THODE STYLE 3: PIN 1. NODE 2. NODE 3. THODE STYLE 4: PIN 1. N.. 2. THODE 3. NODE STYLE 5: PIN 1. THODE 2. THODE 3. NODE SE 318D 04 S 59 Package Outline Dimensions 8 4
22 PGE OUTLINE DIMENSIONS (continued) 0.08 (0003) L S H G F D B M 3. DIMENSIONING ND TOLERNING PER NSI 4. ONTROLLING DIMENSION: INH. INHES MILLIMETERS B D F G H L M S STYLE 1: PIN 1. BSE 2. OLLETOR 3. EMITTER 4. OLLETOR STYLE 2: PIN 1. NODE 2. THODE 3. N 4. THODE STYLE 3: PIN 1. GTE 2. DRIN 3. SOURE 4. DRIN SE 318E 04 SOT 223 S L B 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: MILLIMETER. 3. MXIMUM LED THINESS INLUDES LED FINISH THINESS. MINIMUM LED THINESS IS THE MINIMUM THINESS OF BSE MTERIL (0.002) G H D M MILLIMETERS INHES B D G H L M S STYLE 1: PIN 1. DRIN 2. DRIN 3. GTE 4. SOURE 5. DRIN 6. DRIN SE 318G 02 TSOP 6 PLSTI Package Outline Dimensions 8 5
23 PGE OUTLINE DIMENSIONS (continued) 0.05 (0.002) V S H L G B D R N 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: INH. INHES MILLIMETERS B D G H REF REF L BS BS N REF REF R S V STYLE 2: PIN 1. NODE 2. N.. 3. THODE STYLE 3: PIN 1. BSE 2. EMITTER 3. OLLETOR STYLE 4: PIN 1. THODE 2. THODE 3. NODE STYLE 5: PIN 1. NODE 2. NODE 3. THODE STYLE 7: PIN 1. BSE 2. EMITTER 3. OLLETOR STYLE 9: PIN 1. NODE 2. THODE 3. THODE NODE STYLE 10: PIN 1. THODE 2. NODE 3. NODE THODE SE S 70/SOT 323 G V 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: INH. S B D 6 PL 0.2 (0.008) M B M INHES MILLIMETERS B D G BS 0.65 BS H N REF 0.20 REF S V N STYLE 1: PIN 1. EMITTER 2 2. BSE 2 3. OLLETOR 1 4. EMITTER 1 5. BSE 1 6. OLLETOR 2 H STYLE 6: PIN 1. NODE 2 2. N/ 3. THODE 1 4. NODE 1 5. N/ 6. THODE 2 SE 419B-01 SOT 363 Package Outline Dimensions 8 6
24 PGE OUTLINE DIMENSIONS (continued) 1 ÂÂÂ ÂÂÂ 2 D B H E 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: INH. INHES MILLIMETERS B D E H STYLE 1: PIN 1. THODE 2. NODE SE SOD 123 S D 3 PL 0.20 (0.008) M B G B 0.20 (0.008) 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INHES B D G 1.00 BS BS H L S 0.50 BS BS STYLE 1: PIN 1. BSE 2. EMITTER 3. OLLETOR L H STYLE 4: PIN 1. THODE 2. THODE 3. NODE SE SOT 416/S 90 Package Outline Dimensions 8 7
25 PGE OUTLINE DIMENSIONS (continued) F H G D N B SETING PLNE L M 1. LEDS WITHIN 0.13 (0.005) RDIUS OF TRUE POSITION T SETING PLNE T MXIMUM MTERIL ONDITION. 2. DIMENSION L TO ENTER OF LEDS WHEN FORMED PRLLEL. 3. DIMENSION B DOES NOT INLUDE MOLD FLSH. 4. ROUNDED ORNERS OPTIONL. INHES MILLIMETERS B D F G BS 2.54 BS H L BS 7.62 BS M N SE PIN DIP PLSTI H G F 9 D 16 PL B S 0.25 (0.010) M T SETING T PLNE M L M 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: INH. 3. DIMENSION L TO ENTER OF LEDS WHEN FORMED PRLLEL. 4. DIMENSION B DOES NOT INLUDE MOLD FLSH. 5. ROUNDED ORNERS OPTIONL. INHES MILLIMETERS B D F G BS 2.54 BS H BS 1.27 BS L M S SE PIN DIP PLSTI Package Outline Dimensions 8 8
26 PGE OUTLINE DIMENSIONS (continued) B P 7 PL 0.25 (0.010) M B M 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS ND B DO NOT INLUDE MOLD PROTRUSION. 4. MXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INLUDE DMBR PROTRUSION. LLOWBLE DMBR PROTRUSION SHLL BE (0.005) TOTL IN EXESS OF THE D DIMENSION T MXIMUM MTERIL ONDITION. T SETING PLNE G D 14 PL 0.25 (0.010) M T B S S R X 45 M F MILLIMETERS INHES B D F G 1.27 BS BS M P R SE SO 14 PLSTI T SETING PLNE G B D 16 PL 0.25 (0.010) M T B S S P 8 PL 0.25 (0.010) M B S M R X 45 F 1. DIMENSIONING ND TOLERNING PER NSI 2. ONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS ND B DO NOT INLUDE MOLD PROTRUSION. 4. MXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INLUDE DMBR PROTRUSION. LLOWBLE DMBR PROTRUSION SHLL BE (0.005) TOTL IN EXESS OF THE D DIMENSION T MXIMUM MTERIL ONDITION. MILLIMETERS INHES B D F G 1.27 BS BS M P R SE 751B 05 SO 16 PLSTI Package Outline Dimensions 8 9
MJ16018 MJW kv SWITCHMODE Series SEMICONDUCTOR TECHNICAL DATA POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS
SEMIONDUTOR TEHNIL DT Order this document by MJ68/D. kv SWITHMODE Series These transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.
More informationPNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
More informationNPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Device NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
More informationNJD1718, NJVNJD1718. Power Transistors. PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS
Power Transistors PNP Silicon For Surface Mount pplications Designed for highgain audio amplifier and power switching applications. Features Low ollectoremitter Saturation oltage High Switching Speed Epoxy
More informationJ308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMIONDUTOR TEHNIL DT N hannel Depletion 3 GTE 1 DRIN Motorola Preferred Devices 2 SOURE MXIMUM RTINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Gate Source Voltage VGS 25 Vdc Forward Gate
More informationNST3906DXV6T1, NST3906DXV6T5. Dual General Purpose Transistor
NST396DXV6T1, NST396DXV6T5 Dual General Purpose Transistor The NST396DXV6T1 device is a spin off of our popular SOT23/SOT323 threeleaded device. It is designed for general purpose amplifier applications
More informationpf, 30 Volts Voltage Variable Capacitance Diodes
6.8 100 pf, 30 Volts Voltage Variable Capacitance Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control
More informationNUD3212. Product Preview Integrated NPN Transistor with Free Wheeling Diode to Drive Inductive Loads
Product Preview Integrated NPN Transistor with Free Wheeling Diode to Drive Inductive Loads This device is used to switch inductive loads between 1.0 V and 12 V such as small PCB relays, solenoids, and
More informationBF420. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMIONUTOR TENI T NPN Silicon 3 SE OETOR 2 1 EMITTER MXIMUM RTINS Rating Symbol F420 F422 Unit ollector Emitter Voltage VEO 300 250 Vdc ollector ase Voltage VO 300 250 Vdc Emitter ase Voltage VEO 5.0 Vdc
More information2N6027, 2N6028. Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers. PUTs 40 VOLTS 300 mw
Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to program unijunction characteristics such as R BB, η, I V, and I P by
More informationLMUN2211LT1G SERIES. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD.
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
More informationLOW V CE(SAT) PNP SURFACE MOUNT TRANSISTOR
DPLS16 LOW V E(ST) PNP SURFE MOUNT TRNSISTOR NEW PRODUT Features Epitaxial Planar Die onstruction omplementary NPN Type vailable (DNLS16) Surface Mount Package Suited for utomated ssembly Lead Free/RoHS
More informationDPAK For Surface Mount Applications
SEMIONDUTOR TEHNIAL DATA Order this document by MJD/D DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications
More informationSOT-23 Mark: 1A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
B E TO-92 MMBT394 SOT-23 Mark: A B E / MMBT394 / PZT394 PZT394 SOT-223 B E NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends
More informationMBR5H100MFST3G NRVB5H100MFST3G. SWITCHMODE Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS
MBRHMFS, NRVBHMFS SWITHMODE Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides apability of Inspection and Probe
More informationNPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS(1) ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMIONDUTOR TEHNIAL DATA Order this document by 2N393/D NPN Silicon *Motorola Preferred Device OLLETOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit ollector Emitter Voltage VEO 4 Vdc ollector
More informationMMBD1005LT1 MMBD2005T1 MMBD3005T1 SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD005LT/D Part of the GreenLine Portfolio of devices with energy conserving traits. This switching diode has the following features: Very Low Leakage
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N425 2N425 B E TO-92 This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
More informationEMC5DXV5T1, EMC5DXV5T5
EMC5DXV5T, EMC5DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor)
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
B E TO-92 MMBT396 SOT-23 Mark: 2A B E / MMBT396 / PZT396 PZT396 SOT-223 B E PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents
More informationMBRB20200CT. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES 200 VOLTS
Preferred Device Dual Schottky Rectifier... using Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency switching power supplies
More informationNPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
SEMICONDUCTOR TECHNICAL DATA Order this document by MMUN22LT/D NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a
More informationMPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 4 Collector Base Voltage
More informationFour Transistors Equal Power Each. Watts mw/ C Watts mw/ C TJ, Tstg 55 to +150 C. Characteristic Symbol Min Max Unit
PNP/NPN Silicon Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCB 40 Vdc Emitter Base Voltage
More informationN Channel Enhancement Mode Silicon Gate
SEMIONDUTOR TEHNIAL DATA Order this document by MGPN6ED/D N hannel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and
More informationSmall Signal MOSFET 115 mamps, 60 Volts N Channel SOT 23
Small Signal MOSFET 115 mamps, 60 Volts NChannel SOT2 Pb Free Package is Available. LESHAN RADIO COMPANY, LTD. 1 MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DSS 60 Vdc DrainGate Voltage
More informationBAV70DXV6T1, BAV70DXV6T5 Preferred Device. Monolithic Dual Switching Diode Common Cathode. Lead-Free Solder Plating.
BAV70DXV6T1, BAV70DXV6T5 Preferred Device Monolithic Dual Switching Diode Common Cathode LeadFree Solder Plating MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage V R 70 Vdc Forward
More informationSMS Volt TVS Array For ESD and Latch-Up Protection. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics.
Description The SMS series of TS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. Each device will protect
More informationNPN Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION
is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous
More informationNPN Silicon MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS
NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 45 V Collector Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 500 madc THERMAL
More informationDSS5240T. Features. Mechanical Data NEW PRODUCT. Application. Ordering Information (Note 4 & 5) Marking Information
YM NEW PRODUT 40V PNP LOW STURTION TRNSISTOR IN SOT23 Features BV EO > -40V I = -2 high ontinuous ollector urrent I M = -3 Peak Pulse urrent Low Saturation Voltage -225mV Max @ I = -. R E(ST) = 90mΩ at
More informationGeneral Purpose Transistor
General Purpose Transistor Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive
More informationMJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS
MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N425 2N425 B E TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25
More informationGeneral Purpose Transistors
General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/ S 7 which is designed for low power surface mount applications.
More informationBC856ALT1 Series. General Purpose Transistors. PNP Silicon. MAXIMUM RATINGS (T A = 25 C unless otherwise noted) MARKING DIAGRAM
Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit CollectorEmitter oltage BC856 BC857 BC858, BC859 CollectorBase oltage BC856 BC857
More informationNB3L553/D. 2.5 V / 3.3 V / 5.0 V 1:4 Clock Fanout Buffer
2.5 V / 3.3 V / 5.0 V :4 lock Fanout Buffer Description The NB3L553 is a low skew to 4 clock fanout buffer, designed for clock distribution in mind. The NB3L553 specifically guarantees low output to output
More informationDistributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. MMT424 NPN SMLL SIGNL SURF MOUNT TRNSISTOR Features pitaxial Planar Die onstruction
More informationSilicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92
More informationFeatures -4.1A. Part Number Case Packaging DMC3025LSD-13 SO-8 2,500/Tape & Reel
DM325LSD 3V OMPLEMENTRY ENHNEMENT MODE MOSFET DVNED INFORMTION Product Summary Device V (BR)DSS R DS(ON) max Package N-hannel 3V P-hannel -3V Description MX 2mΩ @ V GS = 1V 8.5 32mΩ @ V GS = 4.5V 7. SO-8
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 5 Vdc Collector Base Voltage VCBO 4 3 Vdc
More informationTO-92 SOT-23 Mark: 83. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N44 MMBT44 2N44 / MMBT44 B E TO-92 SOT-23 Mark: 83 B E This device is designed for use as general purpose amplifiers and switches requiring collector currents to 5 ma. Absolute Maximum Ratings* TA = 25
More information2N mamps, 60 Volts. Elektronische Bauelemente. 115 mamps, 60VOLTS, RDS(on)=7.5 Small Signal MOSFET 025D MAXIMUM RATINGS
115 mamps, 60VOLTS, RDS(on)=7.5 RoHS Compliant Product 115 mamps, 60 Volts NChannel SOT23 MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc DrainGate Voltage (RGS = 1.0 MΩ) VDGR
More information2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by N69/D NPN Silicon COLLECTOR *Motorola Preferred Device BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 5 Vdc Collector
More information2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier
2N396 / MMBT396 / PZT396 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of ma to ma. EB Ordering Information
More informationMJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications
MJD34, NJMJD34T4G (NPN), MJD3, NJMJD3T4G (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
More informationNSS20601CF8T1G 20 V, 8.0 A, Low V CE(sat) NPN Transistor
NSSF8TG V, 8. A, Low V E(sat) NPN Transistor ON Semiconductor's e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and
More informationMC3479. Stepper Motor Driver
Stepper Motor Driver The M3479 is designed to drive a twophase stepper motor in the bipolar mode. The circuit consists of four input sections, a logic decoding/sequencing section, two driverstages for
More informationNJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS
NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage
More informationTO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E This device is designed for general
More informationPackage View SOT363. c L SOT363
PAKAE INFORMATION Mechanical Data Package View Surface Mount Package ase Material: Molded Plastic, UL Flammability lassification Rating 94V-0 Terminals: Finish Matte Tin Plated Leads, Solderable per MIL-STD-202,
More informationNPN Silicon ON Semiconductor Preferred Device
NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector
More informationMCR100 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V
MCR0 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers,
More informationE n-channel. Parameter Min. Typ. Max. Units
INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - µs @ 25, Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency
More informationNSS35200CF8T1G. 35 V, 7 A, Low V CE(sat) PNP Transistor. 35 VOLTS 7.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 78 m
NSSF8T1G V, 7 A, Low V E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and
More informationTO-92 SOT-23 Mark: 3G. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
MPSH MMBTH MPSH / MMBTH E B TO-92 SOT-2 Mark: G B E This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the µa to ma range to MHz, and low frequency
More informationNSTB1002DXV5T1G, NSTB1002DXV5T5G
NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
More informationMMBT3906. PNP General Purpose Amplifier
Features Collector current capability IC = -200 ma Collector-emitter voltage VCEO = -40 V RoHS compliant package Application General switching and amplification Mechanical Data Case outline: SOT-23 Packing
More informationMCR22-6, MCR22-8 Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS
MCR22-6, MCR22-8 referred evice Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors esigned and tested for repetitive peak operation required for C ignition, fuel ignitors, flash circuits,
More informationMMBT2222L, MMBT2222AL, SMMBT2222AL. General Purpose Transistors. NPN Silicon
L, AL, SAL General Purpose Transistors NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications
More informationNSS40500UW3T2G. 40 V, 6.0 A, Low V CE(sat) PNP Transistor. 40 VOLTS 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 65 m
4, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current
More informationTIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS
TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general purpose switching and amplifier applications. Features DC Current ain h FE = 20 70 @ I C =.0 dc Collector Emitter
More informationPNP Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION
Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous
More informationPART NUMBERING SYSTEM
FETURES VOLTGE: 2 TO VOLTS, URRENT:. & 2. MPERE FLT PK - LOW PROFILE, FOR SURFE MOUNPPLITIONS FST RESPONSE ND LOW FORWRD VOLTGE HIGH TEMPERTURE SOLDERING (25 O / SEONDS) ESY PIK ND PLE THODE RHS mpliant
More informationMUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD 9470F IRG4P50U INSULTED GTE BIPOLR TRNSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT
More informationMMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
More informationMMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
More informationDZTA42. Features. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 DZTA42
3V NPN HIGH VOLTAGE TRANSISTOR IN Features BV EO > 3V I = 5mA High ollector urrent 2W Power Dissipation Low Saturation Voltage V E(sat) < 5mV @ 2mA omplementary PNP Type: DZTA92 Totally Lead-Free & Fully
More information12 VOLTS, 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 45 m. MAXIMUM RATINGS (T A = 25 C) MARKING DIAGRAM
NSS16F8T1G 1, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high
More informationMMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
More informationMSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS
MSR56G, MSRF56G Switch-mode Soft Recovery Power Rectifier These state of the art devices are designed for boost converter or hard switched converter applications, especially for Power Factor Correction
More informationTO-92 SOT-23 Mark: ZF. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N426 MMBT426 2N426 / MMBT426 B E TO-92 SOT-23 Mark: ZF B E This device is designed for general purpose amplifier and switching applications at collector currents to µa as a switch and to ma as an amplifier.
More informationMPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
MPSA Amplifier Transistor NPN Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 4. Vdc Collector
More informationTop View Device Symbol Top View Pin-Out
YWW NEW PRODUT 500V PNP HIGH PERFORMANE TRANSISTOR IN Features BV EO > -500V I = -150mA High ontinuous urrent I M = -500mA Peak Pulse urrent Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen
More informationMM3Z2V4T1 SERIES. Zener Voltage Regulators. 200 mw SOD 323 Surface Mount
Zener Voltage Regulators mw Surface Mount This series of Zener diodes is packaged in a surface mount package that has a power dissipation of mw. They are designed to provide voltage regulation protection
More informationMMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
More information2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 40 60 Collector
More information20V N-Channel Enhancement-Mode MOSFET
1 3 LESHAN RADIO COMPANY, LTD. V N-Channel Enhancement-Mode MOSFET LN3LT1G VDS= V RDS(ON), Vgs@4.5V, Ids@.8A = 6m Ω RDS(ON), Vgs@.5V, Ids@.A = 115m Features High Density Cell Design For Ultra Low On-Resistance
More informationBASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.
More informationGeneral Purpose Transistor
NPN Silicon RoHS product for packing code suffix "G", Halogen free product for packing code suffix "H". MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector Emitter Voltage O 3 4 Vdc SOT 23 Collector
More informationJ5731. High Voltage PNP Silicon Power Transistors SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS
High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features PNP Complements to the MJD7 thru
More informationHigh Voltage Input Rectifier Diode, 60 A
VS-6EPS..PbF Series, VS-6EPS..-M3 Series High Voltage Input Rectifier Diode, 6 FETURES TO-247 modified 2 3 Base cathode 2 3 athode node Very low forward voltage drop 5 max. operating junction temperature
More information2N4403 / MMBT4403 PNP General-Purpose Amplifier
2N443 / MMBT443 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 5 ma. EB TO-92 SOT-23 Mark:2T B E Figure. 2N443
More informationMSR860G, MSRF860G. Switch-mode Soft Recovery Power Rectifiers. Plastic TO 220 Package SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES, 600 VOLTS
MSRG, MSRFG Switch-mode Soft Recovery Power Rectifiers Plastic TO Package These state of the art devices are designed for use as free wheeling diodes in variable speed motor control applications and switching
More informationMUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k
MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Digital Transistors (BRT) R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
More informationHigh Voltage Surface Mountable Input Rectifier Diode, 8 A
VS-8EWS8S-M3, VS-8EWSS-M3 High Voltage Surface Mountable Input Rectifier Diode, 8 TO-5 (D-PK) 3 Base cathode + 3 node - - node PRODUT SUMMRY Package TO-5 (D-PK) I F(V) 8 V R 8 V, V V F at I F. V I FSM
More informationMBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS
MBRD62CTG Series, NRVBD64CTG Series Switch Mode Power Rectifiers DPK 3 Surface Mount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling
More informationVdc Vpk Drain Current Continuous Drain Current 100 C Drain Current Single Pulse (t p 10 μs)
Designer s Data Sheet TMOS E FET. Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche
More informationPT23T2222A NPN switching transistor
NPN switching transistor Description NPN switching transistor in a SOT-23 plastic package. 1 - Base 3 - Collector Feature 2 - Emitter High current (max. 600 ma) Lead finish:100% matte Sn(Tin) Mounting
More informationDatasheetArchive.com. Request For Quotation
Datasheetrchive.com Request For Quotation Order the parts you need from our real-time inventory database. Simply complete a request for quotation form with your part information and a sales representative
More informationMBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package
MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal
More informationMUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS
MUR20CTRG, MURB20CTRG, NRVUB20CTRT4G SWITCHMODE Power Rectifier These state of the art devices are designed for use in negative switching power supplies, inverters and as free wheeling diodes. lso, used
More informationNYE08-10B6TG. Protected TRIAC
NYE8-B6TG Protected TRIAC Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive
More informationHigh Performance Schottky Rectifier, 5.5 A
High Performance Schottky Rectifier, 5.5 VS-5WQ3FN-M3 D-PK (TO-252) Base cathode 4, 2 3 node node PRODUT SUMMRY Package D-PK (TO-252) I F(V) 5.5 V R 3 V V F at I F See Electrical table I RM 58 m at 25
More informationMARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
More informationExcellent Integrated System Limited
Datasheet of -7 - TRNS PNP 3V 1 SOT-323 Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Diodes Incorporated -7 For any
More informationLMUN2211LT1 SERIES. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD.
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
More informationFMMT491Q. Mechanical Data. Description. Feature. Ordering Information (Notes 4 & 5) Marking Information 60V NPN MEDIUM POWER TRANSISTOR IN SOT23
60V NPN MEDIUM POWER TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature BV EO > 60V = 1A
More informationHMPP-386x Series MiniPak Surface Mount RF PIN Diodes
HMPP-86x Series MiniPak Surface Mount RF PIN Diodes Data Sheet Description/Applications These ultra-miniature products represent the blending of Avago Technologies proven semiconductor and the latest in
More information