SMS Volt TVS Array For ESD and Latch-Up Protection. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics.
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- Jemimah Elliott
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1 Description The SMS series of TS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. Each device will protect up to four lines operating at 3.3 volts. The SMS3.3 is a solid-state device designed specifically for transient suppression. It is constructed using Semtech s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over traditional pn junction processes. They offer desirable characteristics for board level protection including fast response time, low clamping voltage and no device degradation. The SMS3.3 may be used to meet the immunity requirements of IE -4-2, level 4 (±15k air, ±8k contact discharge). The low cost SOT23-L package makes them ideal for use in portable electronics such as cell phones, PD s, and notebook computers. SMS olt TS rray For ESD and Latch-Up Protection Features Transient protection for data lines to IE -4-2 (ESD) ±15k (air), ±8k (contact) IE -4-4 (EFT) 4 (5/5ns) IE -4-5 (Lightning) 12 (8/2µs) Protects four I/O lines Working voltage: 3.3 Low leakage current (<1µ) Low clamping voltage Low capacitance (35pF typical) Solid-state EPD TS technology Mechanical haracteristics EIJ SOT23-L package Molding compound flammability rating: UL 94- Marking : Marking ode Packaging : Tape and Reel per EI 481 pplications ell phone Handsets and ccessories Microprocessor Based Equipment Personal Digital ssistants (PD s) and Pagers Desktops P and Servers Notebook, Laptop, and Palmtop omputers Portable Instrumentation Peripherals MP3 Players ordless Phones Equivalent ircuit Diagram Schematic & PIN onfiguration SOT23-L (Top iew) Revision 8/11/4 1 United States Patent No.
2 bsolute Maximum Rating Rating Symbol alue Units Peak Peak Pulse Power (tp = 8/2µs) Pulse urrent (tp = 8/2µs) ESD per IE -4-2 (ir) ESD per IE -4-2 (ontact) P pk 2 Watts 12 ESD >25 >15 k Soldering Temperature T L 2 ( seconds) o Operating Temperature T J -55 to +125 o Storage Temperature T STG 55 to o Electrical haracteristics SMS3.3 Parameter Symbol onditions Minimu- m Typical Maximu- m Units Reverse Stand-Off oltage WM R. 3 3 Punch-Through Snap-Back oltage oltage PT SB I PT I SB = 2µ 3. 5 = 5m 2. 8 Reverse Leakage urrent I R RWM = 3.3, T= µ lamping oltage = 1, tp = 8/2µ s ny I/O to Ground lamping oltage = 5, tp = 8/2µ s ny I/O to Ground lamping oltage = 12, tp = 8/2µ s ny I/O to Ground Steering Diode Forward oltage (Reverse lamping oltage) F = 1, tp = 8/2µ s ny I/O to Ground 1.7 Junction apacitance j Each I/O pin and Ground =, f = 1MHz R 35 4 pf 24 Semtech orp. 2
3 Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Peak Pulse Power - PPk (kw) Pulse Duration - tp (µs) Pulse Waveform % of Rated Power or mbient Temperature - T ( o ) lamping oltage vs. Peak Pulse urrent Percent of e -t td = /2 Waveform Parameters: tr = 8µs td = 2µs Time (µs) lamping oltage - () Waveform Parameters: tr = 8µs td = 2µs Peak Pulse urrent - () Forward oltage- F () For orwar ard oltage vs. For orwar ard urrent Waveform Parameters: tr = 8µs td = 2µs apacitance - j (pf) apacitance vs. Rever erse oltage I/O to GND f = 1MHz Forward urrent - I F () Reverse oltage - R () 24 Semtech orp. 3
4 pplications Information Device onnection for Protection of Four Data Lines The SMS3.3 is designed to protect up to four unidirectional data lines. The device is connected as follows: SMS3.3 ircuit Diagram 1. Unidirectional protection of four I/O lines is achieved by connecting pins 1, 3, 4 and to the data lines. Pin 2 and 5 are connected to ground. The ground connections should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. ircuit Board Layout Recommendations for Suppression of ESD Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: Protection of Four Unidirectional Lines Place the TS near the input terminals or connectors to restrict transient coupling. Minimize the path length between the TS and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. Matte Tin Lead Finish Matte tin has become the industry standard lead-free replacement for SnPb lead finishes. matte tin finish is composed of % tin solder with large grains. Since the solder volume on the leads is small compared to the solder paste volume that is placed on the land pattern of the PB, the reflow profile will be determined by the requirements of the solder paste. Therefore, these devices are compatible with both lead-free and SnPb assembly techniques. In addition, unlike other lead-free compositions, matte tin does not have any added alloys that can cause degradation of the solder joint. 24 Semtech orp. 4
5 Typical pplications 24 Semtech orp. 5
6 Outline Drawing -SOT23 - SO-8 L 2X E/2 ccc 2X N/2 TIPS aaa SETING PLNE N 1 2 B D e1 D EI E e 2 1 bxn bbb -B D H GGE PLNE.25 H SIDE IEW DETIL L (L1) c 1 SEE DETIL DIMENSIONS INHES MILLIMETERS DIM MIN NOM MX MIN NOM MX b c D E E e.1 BS.37 BS 2.8 BS.95 BS e1.75 BS 1.9 BS L L1 (.24) (.) N aaa.4. bbb.8.2 ccc.8.2 NOTES: 1. ONTROLLING DIMENSIONS RE IN MILLIMETERS (NGLES IN DEGREES). 2. DTUMS -- ND -B- TO BE DETERMINED T DTUM PLNE -H- 3. DIMENSIONS "E1" ND "D" DO NOT INLUDE MOLD FLSH, PROTRUSIONS OR GTE BURRS. Land Pattern -SOT23 L X () G Y Z DIM G P X Y Z DIMENSIONS INHES MILLIMETERS (.98) (2.5) P NOTES: 1. THIS LND PTTERN IS FOR REFERENE PURPOSES ONLY. ONSULT YOUR MNUFTURING GROUP TO ENSURE YOUR OMPNY'S MNUFTURING GUIDELINES RE MET. 24 Semtech orp.
7 Marking Ordering Information Part Number Lead Finish Qty per Reel Reel Size SMS3.3.T SMS3.3.TT SnPb 3, 7 Inch Pb free 3, 7 Inch Note: (1) No suffix indicates tube pack. Top Side Mark Tape and Reel Specification Device Orientation in Tape: Direction of Feed Tape Specifications (per EI 481) Reel Material: Static Dissipative Tape Material: Static Dissipative Tape Width: 8mm +/-.3mm omponent Pitch (max.): 4mm +/-.mm omponent avity Play: 2 ontact Information Semtech orporation Protection Products Division 2 Flynn Rd., amarillo, 9312 Phone: (85) FX (85) Semtech orp. 7
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