IMPACT Lithography/DfM Roundtable

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IMPACT Lithography/DfM Roundtable Focus Match Location Z 0

Clifford, Marshal Miller, Lynn Wang, Kenji Yamazoe Visiting

Jihoon Kim, EECS UC Berkeley University IMPACT of Lit California

1 IMPACT Lithography/DfM Roundtable Focus Match Location Z 0 Neureuther Research Group Juliet Rubinstein, Eric Chin, Chris Clifford, Marshal Miller, Lynn Wang, Kenji Yamazoe Visiting Industrial Fellow, Canon, Tina Chan, Sandy Wiraatmadja, Alex Li, Jihoon Kim, EECS UC Berkeley University IMPACT of Lit California ho g r a phy/ Berkeley D f M Ro San undiego dt a bl e Los 1Angeles 09/24/2008

0 Themes: Neureuther Group Pattern-Matching Fast-CAD techniques Match Location Through focus algebraic models Linking with circuit performance analysis Real-time guidance of

EUV Scattering RADICAL and image analysis Fast image analysis algorithms (Kenji Yamazoe) 1443 Defocus - 80 nm -40 nm 0 nm 40 nm 80 nm 0 10 20 30 40 50 60 Distance (nm)

2 0 Themes: Neureuther Group Pattern-Matching Fast-CAD techniques Match Location Through focus algebraic models Linking with circuit performance analysis Real-time guidance of pattern decomposition Electronic Testing Parameter-specific ring oscillator layout and testing (BWRC) Computational Lithography Electromagnetic scattering FDTD TEMPEST Fast EUV Scattering RADICAL and image analysis Fast image analysis algorithms (Kenji Yamazoe) 1443 Defocus - 80 nm -40 nm 0 nm 40 nm 80 nm Distance (nm) Incident Wave σ = 0 was used to emulate plane wave illumination with NA = 1.0 and 2x reduction Distance (nm) IMPACT Lit ho g r a phy/ D f M Ro un dt a bl e 2 09/24/2008

3 IMPACT, Neureuther, August 08 3 Sources of systematic variation are changing rapidly Layout 90nm 45nm 22nm Litho F ~ 1% F ~ 1% F ~ (2%) Etch F > 10% F ~ 2% F ~ (2%) S/D Stress NA F ~ 5% F ~ (5%) STI NA F ~ 3% F ~ (3%) Align (DP) F ~ (1%) F ~ (1%) F ~ (5%) PhD Thesis Liang-Teck Pang 2008 (x%) => estimated by ARN Based on work at the Berkeley Wireless Research Center (BWRC) Copyright 2008, Regents of University of California 3

Pattern Matching for Through Focus Effects Juliet Rubinstein (Holwill) CAD Student, Intel Fellow Expected

decomposition for double patterning and develop parameter specific electronic monitors Through-focus

IMPACT Lit ho g r a phy/ D f M Ro un dt a bl e 4 Electric Test for Defocus using a double exposure self

4 Pattern Matching for Through Focus Effects Juliet Rubinstein (Holwill) CAD Student, Intel Fellow Expected Graduation: May 09 Goals: Develop fast approximate methods with physically based models to assess and guide decomposition for double patterning and develop parameter specific electronic monitors Through-focus theoretical model for creating patterns to be used for more accurate focus pattern matching. IMPACT Lit ho g r a phy/ D f M Ro un dt a bl e 4 Electric Test for Defocus using a double exposure self interferometric pattern + = Pattern Matching for Advanced Lithography Applications: off-axis illumination, polarization, high-na, double patterning 09/24/2008

Interconnect Variation Sources and Monitors Goal: Use process/device/circuit simulation to understand process variation electrical contributions and develop parameter specific electronic

across the lithographic process window (SPIE08) Various interconnect scenarios and sensitivities Bossung plots for R, C, and delay Phase-shift interconnect layout as a process monitor

5 Interconnect Variation Sources and Monitors Goal: Use process/device/circuit simulation to understand process variation electrical contributions and develop parameter specific electronic monitors Prediction of interconnect delay variations using pattern matching (SPIE 07) Slack time order in a design changes through focus (BWRC) Eric Chin Interconnect Modeling timing across the lithographic process window (SPIE08) Various interconnect scenarios and sensitivities Bossung plots for R, C, and delay Phase-shift interconnect layout as a process monitor Ongoing studies: Focus-Exposure algebraic models for R, C & delay Double patterning, Multilayer metals Integration of variation modeling into design toolkits IMPACT Lit ho g r a phy 5 04/09/2008

Layout-Induced Effects via Pattern Matching and

3 Neighbor Original Standard Cell Library

Misalignment Normalized RO Freq vs. Misalignment 1.

6 Layout-Induced Effects via Pattern Matching and Electronic Testing Lynn Wang: IC/CAD Student Ring Oscillator Electronic Scan-Chain Testing [1] [1] L.T. Pang VLSI 06 with 1443 PMF=0.3 Neighbor Original Standard Cell Library Characterization Test Structure Designed for Misalignment Normalized RO Freq vs. Misalignment 1.4 In Focus Defocus /24/ /24/2008 Misalignment (nm) 6

Electromagnetic Modeling Goals: Characterize and model photomask edge effects, explore plasmon LER monitors, and examine speed-ups in simulation and interpretation of signals in mask and wafer

7 Electromagnetic Modeling Goals: Characterize and model photomask edge effects, explore plasmon LER monitors, and examine speed-ups in simulation and interpretation of signals in mask and wafer inspection. Characterization and monitoring of photomask edge effects (BACUS 07) ATT-PSM has 20 nm of quadrature light on each edge This tilts the Bossong plot and it is noticeable at 45 nm Impact of Photomask Quadrature Edge Effects through Focus (SPIE 08) MoSi line-ends are about 3X worse than line edges MoSi has only a slight incident angle effect Effects are larger for Ta oxide masks than MoSi (waveguiding?) Dry lab experiment for monitoring ATT-PSM and plasmons Marshal Miller IMPACT Lit ho g r a phy/ D f M Ro un dt a bl e 7 09/24/2008

Fast-EM Methods for EUV Masks Goal: Extend fast ray-tracing methods for EUV buried defect feature interactions and establish rules-of-thumb and defect compensation strategies.

Fast Three-Dimensional Simulation of Buried EUV Mask Defect Interaction with Absorber Features (BACUS 07) Established fast simulation capability in 3D Smoothing based model for images of isolated

8 Fast-EM Methods for EUV Masks Goal: Extend fast ray-tracing methods for EUV buried defect feature interactions and establish rules-of-thumb and defect compensation strategies. This work is supported by Intel and will provide a leg-up for IMPACT in Y3 and Y4. Fast Three-Dimensional Simulation of Buried EUV Mask Defect Interaction with Absorber Features (BACUS 07) Established fast simulation capability in 3D Smoothing based model for images of isolated buried EUV multilayer defects (SPIE 08) Smoothing process imposes asymptotic surface shape Emphasizes center of lens => PSF broader and less ringing How does this affect defect compensation strategies? Y-Distance (nm) Chris Clifford Corrected Absorber Pattern with Threshold: X-Distance (nm) IMPACT Lit ho g r a phy/ D f M Ro un dt a bl e 8 09/24/ /09/2008

EUV Lithography Defect Simulation Goal : Simulate and compare EUV buried defect feature interactions.

Currently : matching experimental and simulated data by finding aberration levels Defect Center Intensity Intensity 1.8 1.

48 astigmatism = 0.56-8 -6-4 -2 0 2 4 6 8 10 Focus Focus Position Tina Chan Bioengineering B.S.

9 EUV Lithography Defect Simulation Goal : Simulate and compare EUV buried defect feature interactions. Establish rules-of-thumb and defect compensation strategies. Currently : matching experimental and simulated data by finding aberration levels Defect Center Intensity Intensity Intensity of Defects Through Focus experimental data astigmatism = 0.40 astigmatism = 0.48 astigmatism = Focus Focus Position Tina Chan Bioengineering B.S Interested in: Cell and Tissue Engineering Finite Element Modeling Sandy Wiraatmadja EECS B.S. Dec 08 Interested in: Circuits Process LBNL/Intel Buried Defect Exp. IMPACT Lit ho g r a phy/ D f M Ro un dt a bl e 9 09/24/2008

Lithography Analysis using Virtual Access Website Alex Li

Strengthen coding & debugging skills in Java, HTML & Perl.

Solve the server-client problems for the website and the

10 Lithography Analysis using Virtual Access Website Alex Li Goal: Learn about lithography, JAVA applets, website design. Work for an animation studio. Goal: Learn about simulation. Strengthen coding & debugging skills in Java, HTML & Perl. Jihoon Kim Update the look and feel of the Lava site. Solve the server-client problems for the website and the applets. Develop new Java applets for physical illustrations, EUV, etc. IMPACT Lit ho g r a phy/ D f M Ro un dt a bl e 10

11 Kenji Yamazoe, VIF Canon Research field Partially coherent theory and simulation time TCC calculation & Eigenfunction generation Abbe SOCS P-Dec. Repetition of simulation (same optical condition) 09/24/ /24/ Development of little offset SOCS: P-Dec.

1500 g 0 Back propagation y [nm] 1000 500 0-500

1000 500 0-500 -1000 f 09/24/2008 09/24/2008

1000 2000 x [nm] Simulation results y [nm] 1500

12 Kenji Yamazoe, VIF Canon Research field Partially coherent theory and simulation g 0 Back propagation y [nm] Optimized mask y [nm] f 09/24/ /24/ x [nm] x [nm] Simulation results y [nm] x [nm]

2008 IMPACT Workshop. Faculty Presentation: Lithography. By Andy Neureuther, Costas Spanos, Kameshwar Poolla, EECS and ME, UC Berkeley

2008 IMPACT Workshop. Faculty Presentation: Lithography. By Andy Neureuther, Costas Spanos, Kameshwar Poolla, EECS and ME, UC Berkeley 2008 IMPACT Workshop Faculty Presentation: Lithography By Andy Neureuther, Costas Spanos, Kameshwar Poolla, EECS and ME, UC Berkeley IMPACT Lithography 1 Current Milestones Litho 1: Develop and experimentally