Relevant Projects. RF-Thermal characterization of MEMS devices. High power GaN arrays for power beaming

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1 Relevant Projects Non-Linear RF device characterization from external EMI/EM excitations!haracterization is necessary for our EMI/EM MURI! Pulsed-RF is of most importance/ RF-Thermal characterization of MEMS devices High power GaN arrays for power beaming Reconfigurable Arrays Incorporating High Power Switches

2 GaN HEMT Low Noise Amplifiers under High Power EM Induced Effects Eqn Var 1 Ref Eqn Va r 2 Eq n Va r Y Z Ex Plane wave Illumination K: Direction of Propagation X apacitor 3rd order non-linearities are significantly increased Gate Drain Transistor apacitor Output Power in dbm Fundamental 3rd Harmonic Input Power in dbm oherent constructive addition of Induced EM voltage and input source PARAMETER SWEEP ParamSweep Sweep1 SweepVar="Pin" SimInstanceName[1]="HB1" SimInstanceName[2]= SimInstanceName[3]= SimInstanceName[4]= SimInstanceName[5]= SimInstanceName[6]= Start=- 10 Stop=100 Step=1 Vin V_1Tone SR 6 V=Vin V TL5 TL2 Freq=10.0 GHz MTEE Tee2 L=0.8 mm L=len3 mm W1=0.315 mm Vin = 10mV MR STUB Stub2 L=len5 mm HARMONI BALANE HarmonicBalance HB1 Freq[1]=10.0 GH z Order[1]=4 3 =1n pf Single Tone Vgs from Table 1 Stub3 L=L2 mm Angle=Ang1 Single Tone Vds from Table 1 V_1Tone V_1Tone SR 4 SR 5 TL7 TL1 TL3 FET1_model V=VGS mv V=VD S mv MR OS X1 ros1 Freq=9.5 G H z Freq=9.5 GHz L=L6 mm L=len2 mm L=L3 mm W1=0.315 mm W4=0.315 mm TL4 3 Pin=0. VDS=polar(0.4915*50*sqrt(2),141.58) L=len4 mm VGS=polar(0.2992*50*sqrt(2),-62.58) MTEE Tee3 W1=0.315 mm 2 L4=2.8 opt{ 0.2 to 5.0 } Stub1 L5=1.5 opt{ 0.2 to 5.0 } L6=3.4 opt{ 0.2 to 4.0 } L7=1.3 opt{ 0.3 to 2.0 } W i=0.315 mm V_D L8=3.0 opt{ 0.3 to 2.0 } L=L1 mm TL6 SR 1 L9=0.8 opt{ 0.3 to 3.0 } W=0.315 Vdc mm=- 0.5 V Ang2= opt{ 30 to 80 } L=0.5 mm 4 =200.0 pf Stub5 L=L9 mm Angle=Ang2 MSub MSUB MSub1 H=0.5 mm Er=9.7 Mur=1 ond=1.0e+50 Hu=3.9e+034 mil T=15.4 mil TanD=0 Rough=0 mil TL10 2 MROS =125.0 pf ros2 L=L7 mm W1=0.315 mm W4=0.315 mm TL8 L=L5 mm MTEE Tee5 W1=0.315 mm TL9 Stub4 L=0.3 mm L=L4 mm V_D SR2 Vdc=2.5 V 1 Ang1=53 L1=2.0 L2=4.9 L3=1.5 len2=0.3 len3=0.3 len4=2.0 len5=1.0 1n=125 5 =125.0 pf TL11 L=L8 mm Vout Vout R R2 R=50 Ohm Gain S21 in db in db Normal Gain of LNA LNA with 1V/m Plane Wave LNA with 10V/m Plane wave LNA with 50 V/m Plane wave Frequency in GHz oherent destructive addition of Induced EM voltage and input source

3 Solar Power onversion Using Array of AlGaN/GaN Heterostructure FETs (with Prof. Pavlidis) Wireless Power Transmission (WPT) by means of spatial power-combining oscillator arrays AlGaN/GaN HFETs for RF Signal Sources RF matching networks Integrated arrays

4 High Power Array oncept and Applications Goal is to design a highly stable, efficient and multimode-free oscillator array that is tolerant to multiple device failures. study fundamental issues associated with injection locking of the large antenna array (phase jitter across arrays, multimodes etc.) Large finite arrays must therefore be analyzed as a single unit rather than in periodic form. Since the oscillator circuit and radiating element can strongly interact, edge effects of the array are likely to affect oscillator stability. Oscillator circuit and antenna must be modeled as a single unit leading to excessive computational needs involving millions of unknowns. injection locked oscillator array

5 Power Advantages of III-V Nitrides AlN/GaN hannel Drain Source GaN Gate Si or Si Wide-bandgap (3.4eV) Gallium-Nitride based semiconductors were used for realization of blue diode lasers and demonstration of FETs with record power density >10W/mm at X-band Studies of electron transport in GaN suggest v-f characteristics with a region of negative differential mobility, high threshold and critical fields, and reduced energy-relaxation times