MGA GHz 10W High Efficiency Linear Power Amplifier Product Data Sheet

Transcription

1 Features: 2 db Gain 4 dbm P- 3dB 33 dbm Linear 2.5% EVM (82. 64QAM) 25% Efficiency at 33 dbm Linear Output Power Fully Matched Input and Output for Easy Cascade + 28V Bias Voltage Surface Mount Package with RoHS Compliance MTTF > 85ºC ambient temperature Applications: 82.6d/e WiMax 82.a WLAN Point-To-Point Radio Applications Description: The MGA is a power amplifier with the State-of-the-Art linear power-added-efficiency between 4.9 GHz and 5.9 GHz frequency band. Based on advanced robust GaN device technology, the power-added-efficiency of this power amplifier is as high as 25% when it outputs 2W linear burst power with 2.5% EVM under the 82.6d/e 64QAM modulation schemes. The high efficiency linear power amplifier also has excellent reliability. Ideal applications include the driver and the output power stage of WiMax and WLAN infrastructures and access points. It also can be used for PTP (Point-To-Point) radio applications for this band. Typical RF Performance: Vds=28V,, Icq=8mA, Ta=25 ºC, Z=5 ohm Parameter Units Typical Data Frequency Range MHz Gain (Typ / Min) db 2 / Gain Flatness (Typ / Max) +/-db. /.5 Input Return Loss db 8 Output Return Loss db 8 Output P3dB dbm 4 2.5% EVM dbm 33 Operating Current Range ma -4 Thermal Resistance C /W 5 () Output IP3 is measured with two tones at output power of 3 dbm/tone separated by MHz. Page of, Updated August 25

2 Typical RF Performance: Vds=28.V, Icq=8mA, Z=5 ohm, Ta=25 ºC Gain(dB) MGA Gain Freq(GHz) Gain Return Loss(dB) MGA Return Loss Freq(GHz) Input Output 45 MGA Power 4 Power(dBm) Freq(GHz) P- P-2 P-3 Page 2 of, Updated August 25

3 Typical RF Performance(Cont l): Vds=28.V, Icq=8mA, Z=5 ohm, Ta=25 ºC MGA49594 EVM and 4.9GHz MGA49594 EVM and 5.5GHz EVM(%) EVM 5. Efficiency Channel Power(dBm) Efficiency(%) EVM(%) EVM Efficiency Channel Power(dBm) Efficiency(%) MGA49594 EVM and 5.9GHz EVM(%) EVM Efficiency Channel Power(dBm) Efficiency(%) Page 3 of, Updated August 25

4 Absolute Maximum Ratings: (Ta= 25 C)* SYMBOL PARAMETERS UNITS ABSOLUTE MAXIMUM Vds Drain-Source Voltage V 5 Id Drain Current ma Ig Gate Current ma Pdiss DC Power Dissipation W 5 Pin max RF Input Power dbm +33 Tch Channel Temperature ºC 75 Tstg Storage Temperature ºC -55 to 5 *Operation of this device above any one of these parameters may cause permanent damage. Typical Scattering Parameters: Vds=28V, Icq=8mA,Z=5 ohm, Ta=25 ºC Freq(GHz) db(s) Ang(S) db(s2) Ang(S2) db(s2) Ang(S2) db(s22) Ang(S22) Page 4 of, Updated August 25

5 Mechanical Information: This Package is RoHS compliant Page 5 of, Updated August 25

6 Application Circuit The evaluation board, shown in Figure 3, is fabricated with Rogers s 43 material, 2 mil thick, 2 oz copper weight. The MGA shown in the center of board is a watt amplifier with high gain and high linearity. For best thermal performance, the PCB requires via holes with a diameter of 2 mils placed uniformly over the center pad for thermal relief and RF ground as shown in Figure 4. The via holes underneath the package are back filled with conductive epoxy as shown in Figure 4. The choice of capactir bypassing near the amplififer should have a short circuit resonance at the frequency of operation. A small capacitor 3.9 pf 63 from AVX has a series resonance at 5.5 GHz and will make a good choice for the first bypass capacitor. Figure 3 Evaluation board Figure 4 Hole Pattern Followed up with larger value capacitors pf, pf and 2.2 uf can be used to maintain voltage stability under peak current conditions. The DC ground via holes should be laid out to minimized inductive returns associated with ground loops. Use of stitch ground vias holes can help control the return current and also maintain ground continuity between the top and bottom ground layers. Biasing with quarter-wave stubs at the gate and drain are shown in Figure 3. A 56 ohm resistor is added in series to the gate bias and a 2.2 nh choke is added inseries to the drain bias. The effective impedance is increased which reduces the risk of low frequency oscillations. Page 6 of, Updated August 25

7 Application Notes: carriers, GHz, EVM=2.5% I E E E O F D M Frequenc y: 4.9 GH z Signal Level Setting: 6. dbm Ref. Level / E xt. A tt: 2 6. dbm / 7.9 db Sweep M ode: C ontinuous T rigger M ode: E xternal T rigger O ffs et: - µs Burs t T ype: O FDM DL Burs t M odulation: A LL N o O f Data Symbols : / R e s u l t S u m m a r y N o. of Burs ts 4 M in M ean Limit M ax Limit U nit E V M A ll C arriers % E V M Data C arriers % E V M P ilot C arriers % I Q O ffs et % Gain I mbalanc e % Q uadrature E rror C enter Frequenc y E rror ± ± Hz C loc k E rror ± 8. 3 ± 8 ppm Burs t P ower dbm C res t Fac tor db RSSI dbm RSSI Standard Deviation db C I N R db C IN R Standard Deviation db Page 7 of, Updated August 25

8 Application Notes(Con t): carriers, GHz, EVM=2.5% I E E E O F D M Frequency: 5.5 GHz Signal Level Setting: 6.7 dbm Ref. Level / Ext. A tt: 26.7 dbm / 7.9 db Sweep M ode: C ontinuous T rigger M ode: External T rigger O ffset: - µs Burst T ype: O FDM DL Burst M odulation: A LL No O f Data Symbols : /2425 R e s u l t S u m m a r y No. of Bursts 4 M in M ean Limit M ax Limit U nit E V M A ll C arriers % E V M Data C arriers % E V M P ilot C arriers % I Q O ffs et % Gain I mbalanc e % Q uadrature E rror C enter Frequenc y E rror ± ± 4 4 Hz C loc k E rror ± 8. 2 ± 8 ppm Burs t P ower dbm C res t Fac tor db RSSI dbm RSSI Standard Deviation db C I N R db C INR Standard Deviation 2.2 db Page 8 of, Updated August 25

9 I E E E O F D M Frequenc y: 5.5 GH z Signal Level Setting: 8 dbm Ref. Level / E xt. A tt: 9.5 dbm / 7.9 db Sweep M ode: C ontinuous T rigger M ode: E xternal T rigger O ffs et: - µs Burs t T ype: O FDM DL Burs t M odulation: A LL N o O f Data Symbols : / Spec trum E mis s ion M as k T x C hannel: Bandwidth 3.5 M Hz P ower 4.26 dbm Start Freq. Rel. Stop Freq. Rel. RBW Freq. at Δ to Limit P wr A bs P wr Rel Δ to Limit M Hz -7. M Hz 3 khz GHz dbm db db -7. M Hz -3.7 M Hz 3 khz GHz dbm db db -3.7 M Hz -2.5 M Hz 3 khz GHz dbm db db -2.5 M Hz -.75 M Hz 3 khz GHz dbm db db.75 M Hz 2.5 M Hz 3 khz GHz -23. dbm db db 2.5 M Hz 3.7 M Hz 3 khz GHz dbm db db 3.7 M Hz 7. M Hz 3 khz GHz dbm db -3.2 db 7. M Hz 8.75 M Hz 3 khz GHz dbm db -3.2 db Spec trum M A SK E T SI RBW 3 kh z M arker dbm V BW Hz GHz Ref 9.5 dbm A tt/e L 3. /. db SWT 5.7 s Sweep of 27 CHECK RESULT Pass Spect Mask dbr PK CLRWR Spect Mask dbr B TRG LVL MHz.75 MHz/div MHz Page 9 of, Updated August 25

10 Application Notes(Con t): Typical constellation response for % EVM, 5.9GHz I E E E O F D M Frequenc y: 5.9 GH z Signal Level Setting: 5.6 dbm Ref. Level / E xt. A tt: dbm / 7.9 db Sweep M ode: C ontinuous T rigger M ode: E xternal T rigger O ffs et: - µs Burs t T ype: O FDM DL Burs t M odulation: A LL N o O f Data Symbols : / C apture M emory N o of Samples 8 T ime to C apture Buffer Start. 2 ms C apture T ime 2 ms Gate O ff M arker dbm Ref dbm A tt/e l 3 5. /. db Burs t 4 (4 ) s ms 2. ms/div 2. ms A TRG LVL C ons tellation vs Symbol M arker Q uadrature. 8 5 I nphas e B Page of, Updated August 25