Gallium Nitride (GaN) Technology & Product Development

Size: px
Start display at page:

Download "Gallium Nitride (GaN) Technology & Product Development"

Transcription

1 Gallium Nitride (GaN) Technology & Product Development IEEE IMS / MTT-S 2012 Montreal, Canada

2 GaN A New Enabling Technology Five times faster, higher frequency, faster on-chip logic Five times more power, smaller die, increased range and sensitivity Higher efficiency (10-20%), simplifies system integration Higher temperature operation (up to 225 C), more robust, enables new applications TriQuint GaN Bandwidth More Power Higher Efficiency Higher Temp Advanced R&D Electronic Warfare Next-Generation Radars Communication Systems New Sensors New Missions 500 GHz / 500V per ns

3 TriQuint GaN Process Variants GaN Process Name Frequency Drain Bias Status 0.25-µm DC 20 GHz 40V In Production (2008) 0.15-µm DC 40 GHz 20V In Release < 0.1-µm DC 100 GHz 15V Research THz E/D GaN DC 500 GHz 15V Research Broad GaN Process Roadmap

4 TriQuint s Technology Leadership Government RF Program Awards Program Goal Outcome TITLE III NJTT NEXT Manufacturing Readiness Better Thermal Management Faster Devices E/D Integration Higher Yield Faster Cycle times Better Models Higher Power Density for same reliability Technology Shorter Gate Technology E/D Technology Business Significance Lower Cost Better performance (Bandwidth) V, E, W - band Technology Mixed Signal MPC Switch based Amplifier Very Fast GaN switch More efficient Amplifiers W-Band LNA E/D based LNA Reduced NF > 90 GHz Extend RF and Range

5 Why GaN? 6.5W Ku-band GaAs Power Amplifier 20W Ku-band GaN Power Amplifier Addressing key high-performance needs Networked communications Electronic warfare systems ISR (intelligence, surveillance and reconnaissance) systems GaN delivers: Greater efficiency Reduced BOMs Reduced / eliminated combining losses 40W GaN Switch 30W Wideband GaN PA 55W Power Transistor 20W Ku-band GaN PA

6 WHY GaN? Lower Higher Power Combining Bandwidth Losses. Higher Bandwidth Temperature Efficiency Higher Temperature Smaller Size Higher Power for same Higher Density Insulating power Material Higher Power Band even Smaller at Size higher for Density same Smaller power gap Size Higher Power Temperature for same Density power Efficiency Lower Combining Lower RF Losses Combining losses Losses at high for same temperature Lower Power Input and Output Capacitances Higher Efficiency Higher Temperature Higher Power Operation Higher Bandwidth Higher Voltage High Power density without loosing speed Harmonic tunings Higher Efficiency TriQuint Semiconductor, Inc.

7 WHY GaN on SiC? Higher Thermal Conductivity Lower Self Heating Better Reliability Technology 4.5 W/mm Dissipation Example Thermal Conductivity Channel Temperature Reliability GaAs 52 W/mC ~300C x1 GaN on Si 145 W/mC ~210C x120 better GaN on SiC 330 W/mC ~140C x21000 better

8 GaN Standard Products TriQuint Semiconductor, Inc.

9 Power GaN Transistors Benefits High Power / PAE High Gain Design Flexibility Export Target Markets Defense EW, Radar, Comm, GP Commercial BTS, Cable, Vsat, PtP Other Instrumentation T1G Q3 DC-6GHz 9W T1G Q3 DC-6GHz 18W T1G FS DC-6GHz 30W T1G FS DC-6GHz 55W

10 High Power Amplifiers Benefits High Saturated Power High PAE Wide Bandwidth Target Markets Defense EW, Radar, Comm Commercial Cable, Vsat, PtP Other Instrumentation TGA GHz 10W TGA2576-FL 2.5-6GHz 30W TGA2593-GSG 13-15GHz 20W TGA2579-FL 14-16GHz 20W

11 High Power Switches Benefits High power handling Small Footprint Low control current (ua) Fast Switching Target Markets Radar Instrumentation General Purpose TGS2351-SM DC-6GHz 40W TGS2352 DC-12GHz 20W TGS2353 DC-18GHz 10W 4x4 Ceramic QFN 1.15 x 1.65 (mm) 1.15 x 1.65 (mm)

12 GaN Enabling the Future Low Noise Amplifiers Low NF High Gain High Survivability Higher Frequency Ka W band Power High Speed Logic (500GHz) Higher Efficiency Switch-based amplifiers Controls Limiters Mixers High performance switches

13 Summary TriQuint has been a GaN R&D innovator since 1999, currently leading 5 major contracts GaN is a maturing technology offering significant performance and lifetime advantages over GaAs GaN has broad appeal across many markets due to... High power density High thermal conductivity substrate Low NF TriQuint offers a broad range of GaN solutions and services: FETs, MMICs, switches, packaged transistors / amplifiers / switches integrated assemblies and foundry services TriQuint is developing new GaN processes and product solutions that improve efficiency, reduce BOMs and satisfy requirements beyond the reach of other semiconductors

Microwave & RF 22 nd of March 2018 D. FLORIOT

Microwave & RF 22 nd of March 2018 D. FLORIOT Microwave & RF 22 nd of March 2018 D. FLORIOT Outine Introduction GaN technology roadmap GH15-10 : Up to Ka band GH10 : Towards high frequency (Q / V bands) GaN : Technology & Integration 2 UMS at a glance

More information

These materials are 2015 John Wiley & Sons, Inc. Any dissemination, distribution, or unauthorized use is strictly prohibited.

These materials are 2015 John Wiley & Sons, Inc. Any dissemination, distribution, or unauthorized use is strictly prohibited. RF Applications of GaN Qorvo Special Edition by Andrew Moore and Elias Reese RF Applications of GaN For Dummies, Qorvo Special Edition Published by John Wiley & Sons, Inc. 111 River St. Hoboken, NJ 07030-5774

More information

Thales UK Designs GaN MMIC/Packaging for EU MAGNUS Program Using NI AWR Software

Thales UK Designs GaN MMIC/Packaging for EU MAGNUS Program Using NI AWR Software Success Story Thales UK Designs GaN MMIC/Packaging for EU MAGNUS Program Using NI AWR Software Company Profile Thales UK is a world-leading innovator across the aerospace, defense, ground transportation,

More information

GaN is Finally Here for Commercial RF Applications!

GaN is Finally Here for Commercial RF Applications! GaN is Finally Here for Commercial RF Applications! Eric Higham Director of GaAs & Compound Semiconductor Technologies Strategy Analytics Gallium Nitride (GaN) has been a technology with so much promise

More information

High Power Wideband AlGaN/GaN HEMT Feedback. Amplifier Module with Drain and Feedback Loop. Inductances

High Power Wideband AlGaN/GaN HEMT Feedback. Amplifier Module with Drain and Feedback Loop. Inductances High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop Inductances Y. Chung, S. Cai, W. Lee, Y. Lin, C. P. Wen, Fellow, IEEE, K. L. Wang, Fellow, IEEE, and T. Itoh, Fellow,

More information

Microwave / Millimeter Wave Products

Microwave / Millimeter Wave Products Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s. c

More information

Performance and Applications of GaN MMICs. Professor Jonathan Scott & Professor Anthony Parker

Performance and Applications of GaN MMICs. Professor Jonathan Scott & Professor Anthony Parker Performance and Applications of GaN MMICs Professor Jonathan Scott & Professor Anthony Parker Contents Invited paper license to ramble? Contents: Not a memory dump You will learn something important If

More information

Foundries, MMICs, systems. Rüdiger Follmann

Foundries, MMICs, systems. Rüdiger Follmann Foundries, MMICs, systems Rüdiger Follmann Content MMIC foundries Designs and trends Examples 2 Foundries and MMICs Feb-09 IMST GmbH - All rights reserved MMIC foundries Foundries IMST is a UMS certified

More information

2-6 GHz GaN HEMT Power Amplifier MMIC with Bridged-T All-Pass Filters and Output-Reactance- Compensation Shorted Stubs

2-6 GHz GaN HEMT Power Amplifier MMIC with Bridged-T All-Pass Filters and Output-Reactance- Compensation Shorted Stubs JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.16, NO.3, JUNE, 2016 ISSN(Print) 1598-1657 http://dx.doi.org/10.5573/jsts.2016.16.3.312 ISSN(Online) 2233-4866 2-6 GHz GaN HEMT Power Amplifier MMIC

More information

NPA105-D. Preliminary GHz GaN 40W Power Amplifier. Product Description: Key Features:

NPA105-D. Preliminary GHz GaN 40W Power Amplifier. Product Description: Key Features: Product Description: The Nxbeam is a Ku-band high power GaN MMIC fabricated in 0.2um GaN HEMT on SiC. This part is ideally suited for satellite communications, point-to-point radios, and radar applications.

More information

20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS

20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS Data Sheet FEATURES Low noise figure: 2 db typical High gain: 25. db typical P1dB output power: 13.5 dbm, 2 GHz to GHz High output IP3: 25.5 dbm typical Die size: 1.39 mm 1..2 mm APPLICATIONS Software

More information

& ) > 35W, 33-37% PAE

& ) > 35W, 33-37% PAE Outline Status of Linear and Nonlinear Modeling for GaN MMICs Presented at IMS11 June, 11 Walter R. Curtice, Ph. D. Consulting www.curtice.org State of the Art Modeling considerations, types of models,

More information

A Review of Applications for High Power GaN HEMT Transistors and MMICs. Ray Pengelly and Chris Harris, Cree RF Products April, 2013

A Review of Applications for High Power GaN HEMT Transistors and MMICs. Ray Pengelly and Chris Harris, Cree RF Products April, 2013 A Review of Applications for High Power GaN HEMT Transistors and MMICs Ray Pengelly and Chris Harris, Cree RF Products April, 2013 Summary Available High Power RF Markets for VEDs and GaN HEMTs Advantages

More information

Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios

Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios The University Of Cincinnati College of Engineering Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios Seth W. Waldstein The University of Cincinnati-Main Campus Miguel A. Barbosa

More information

100nm GaN on Si: A Pioneering Technology to Enable High RF Power in Millimeter Wave Bands NEW ENGLAND IMAPS SYMPOSIUM MAY 5, 2015

100nm GaN on Si: A Pioneering Technology to Enable High RF Power in Millimeter Wave Bands NEW ENGLAND IMAPS SYMPOSIUM MAY 5, 2015 Innovating with III-V s 100nm GaN on Si: A Pioneering Technology to Enable High RF Power in Millimeter Wave Bands NEW ENGLAND IMAPS SYMPOSIUM MAY 5, 2015 By Dr Fabien ROBERT Sales & Application Team Manager,

More information

Gallium Nitride & Related Wide Bandgap Materials and Devices

Gallium Nitride & Related Wide Bandgap Materials and Devices Gallium Nitride & Related Wide Bandgap Materials and Devices Dr. Edgar J. Martinez Program Manager DARPATech 2000 GaAs IC Markets 1999 Market $11 Billion 2005 Market $20 Billion Consumers 2% Computers

More information

TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier

TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7-3.7 GHz P SAT :.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db

More information

High Efficiency Class-F MMIC Power Amplifiers at Ku-Band

High Efficiency Class-F MMIC Power Amplifiers at Ku-Band High Efficiency Class-F MMIC Power Amplifiers at Ku-Band Matthew T. Ozalas The MITRE Corporation 2 Burlington Road, Bedford, MA 173 mozalas@mitre.org Abstract Two high efficiency Ku-band phemt power amplifier

More information

NPA100-D GHz GaN 20W Power Amplifier. Product Description: Key Features:

NPA100-D GHz GaN 20W Power Amplifier. Product Description: Key Features: Product Description: The Nxbeam is a Ku-band high power GaN MMIC fabricated in 0.2um GaN HEMT on SiC. This part is ideally suited for satellite communications, point-to-point radios, and radar applications.

More information

OMMIC Innovating with III-V s OMMIC OMMIC

OMMIC Innovating with III-V s OMMIC OMMIC Innovating with III-V s Innovating with III-V s Mixed D/A ED02AH process for radar control functions and new GaN/Si for hyper-frequency power applications Innovating with III-V s Europe s Independant IIIV

More information

IMS2013 / UMS. Update on latest MMIC product development. Viaud JP : June 5 th, 2013

IMS2013 / UMS. Update on latest MMIC product development. Viaud JP : June 5 th, 2013 IMS2013 / UMS Update on latest MMIC product development Viaud JP : June 5 th, 2013 Ref : Product BU date : June 2013 Outline United Monolithic Semiconductor at a glance Technology portfolio & targeted

More information

= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W

= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W CMPA6D Watt, MHz - 6 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA6D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior

More information

High-Efficiency L-Band 200-W GaN HEMT for Space Applications

High-Efficiency L-Band 200-W GaN HEMT for Space Applications INFOCOMMUNICATIONS High-Efficiency L-Band 200-W GaN HEMT for Space Applications Ken OSAWA*, Hiroyuki YOSHIKOSHI, Atsushi NITTA, Tsuneyuki TANAKA, Eizo MITANI, and Tomio SATOH ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

More information

RF High Power GaN Portfolio GaN on Si and GaN on SiC

RF High Power GaN Portfolio GaN on Si and GaN on SiC GaN brochure_singles_080415_layout 1 8/4/15 6:23 PM Page 1 RF High Power GaN Portfolio GaN on Si and GaN on SiC www.macom.com www.macom.com GaN brochure_singles_080415_layout 1 8/4/15 6:23 PM Page 2 GaN

More information

TGA GHz Low Noise Amplifier with AGC. Key Features

TGA GHz Low Noise Amplifier with AGC. Key Features NF (db) Gain, IRL, ORL (db) 2 2 GHz Low Noise Amplifier with AGC Measured Performance Bias conditions: Vd = V, Id = ma, Vg1 =. V, 2 2 2 2 3 3 9 8 7 6 4 3 2 1 Vg2 = +1.3 V Typical 2 4 6 8 12 14 16 18 2

More information

NPA110-D. Preliminary GHz GaN 38W Power Amplifier. Product Description: Key Features:

NPA110-D. Preliminary GHz GaN 38W Power Amplifier. Product Description: Key Features: NPA1-D Product Description: The Nxbeam NPA1-D is a Ka-band high power GaN MMIC fabricated in.2um GaN HEMT on SiC. This part is ideally suited for satellite communications, point-to-point radios, and radar

More information

Gallium nitride (GaN)

Gallium nitride (GaN) 80 Technology focus: GaN power electronics Vertical, CMOS and dual-gate approaches to gallium nitride power electronics US research company HRL Laboratories has published a number of papers concerning

More information

TGA2509. Wideband 1W HPA with AGC

TGA2509. Wideband 1W HPA with AGC Product Description The TriQuint TGA2509 is a compact Wideband High Power Amplifier with AGC. The HPA operates from 2-22 GHz and is designed using TriQuint s proven standard 0.25 um gate phemt production

More information

California Eastern Laboratories

California Eastern Laboratories California Eastern Laboratories 750MHz Power Doubler and Push-Pull CATV Hybrid Modules Using Gallium Arsenide D. McNamara*, Y. Fukasawa**, Y. Wakabayashi**, Y. Shirakawa**, Y. Kakuta** *California Eastern

More information

SERIES LNA LOW NOISE AMPLIFIERS DESCRIPTION. Millimeter-Wave Technology & Solutions

SERIES LNA LOW NOISE AMPLIFIERS DESCRIPTION. Millimeter-Wave Technology & Solutions LOW NOISE AMPLIFIERS FEATURES: Wideband coverage Modular compact design Military or commercial units available 2.92, 2.4, 1.85 mm or Waveguide interfaces as required Internal voltage regulation and bias

More information

GaN Power Amplifiers for Next- Generation Wireless Communications

GaN Power Amplifiers for Next- Generation Wireless Communications GaN Power Amplifiers for Next- Generation Wireless Communications Jennifer Kitchen Arizona State University Students: Ruhul Hasin, Mahdi Javid, Soroush Moallemi, Shishir Shukla, Rick Welker Wireless Communications

More information

RF W GaN WIDEBAND PULSED POWER AMPLIFIER

RF W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDE- BAND PULSED POWER AMPLI- FIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology

More information

Microwave Office Application Note

Microwave Office Application Note Microwave Office Application Note INTRODUCTION Wireless system components, including gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (phemt) frequency doublers, quadruplers, and

More information

Kathy Wood 3/23/2007. ESD Sensitivity of TriQuint Texas Processes and Circuit Components

Kathy Wood 3/23/2007. ESD Sensitivity of TriQuint Texas Processes and Circuit Components ESD Sensitivity of TriQuint Texas Processes and Circuit Components GaAs semiconductor devices have a high sensitivity to Electrostatic Discharge (ESD) and care must be taken to prevent damage. This document

More information

PRELIMINARY = 25 C) Parameter GHz 14.0 GHz 14.5 GHz Units Small Signal Gain db P SAT. = 26 dbm W P 3dB

PRELIMINARY = 25 C) Parameter GHz 14.0 GHz 14.5 GHz Units Small Signal Gain db P SAT. = 26 dbm W P 3dB CMPADE030D PRELIMINARY 30 W, 3.75-4.5 GHz, 40 V, GaN MMIC, Power Amplifier Cree s CMPADE030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit

More information

T/R Modules. Version 1.0

T/R Modules. Version 1.0 T/R Modules Version 1.0 Date: Jun 1, 2015 CONTENT Product Overview... 3 FACTS ON THE TECHNOLOGY... 4 ABOUT NANOWAVE... 6 RF Components and Subsystems NANOWAVE Technologies Inc. is a privately owned Canadian

More information

= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W

= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W CMPA006005D 5 W, 0 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree s CMPA006005D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

More information

Continuous Wave SSPAs. Version 1.6

Continuous Wave SSPAs. Version 1.6 Continuous Wave SSPAs Version 1.6 Date: Jun 1, 2015 CONTENT Product Overview... 3 FACTS ON THE TECHNOLOGY... 4 SOLID-STATE POWER AMPLIFIERS... 5 ABOUT NANOWAVE... 8 RF Components and Subsystems NANOWAVE

More information

HMC5805ALS6 AMPLIFIERS - LINEAR & POWER - SMT. Typical Applications. Features. Functional Diagram

HMC5805ALS6 AMPLIFIERS - LINEAR & POWER - SMT. Typical Applications. Features. Functional Diagram HMC585ALS6 v2.517 GaAs phemt MMIC.25 WATT POWER AMPLIFIER DC - 4 GHz Typical Applications The HMC585ALS6 is ideal for: Test Instrumentation Microwave Radio & VSAT Military & Space Telecom Infrastructure

More information

11-15 GHz 0.5 Watt Power Amplifier

11-15 GHz 0.5 Watt Power Amplifier 11-15 GHz 0.5 Watt Power Amplifier Features Frequency Range : 11-15GHz 27.5 dbm output Psat 13 db Power gain 25% PAE High IP3 Input Return Loss > 11 db Output Return Loss > 6 db Dual bias operation No

More information

TGA2818-SM S-Band 30 W GaN Power Amplifier

TGA2818-SM S-Band 30 W GaN Power Amplifier S-Band 3 W GaN Power Amplifier Applications Military Radar Civilian Radar Wideband Amplifiers Product Features Functional Block Diagram Frequency Range: 2.8-3.7 GHz Pout: >.5 dbm (Pin=27 dbm) Large Signal

More information

S-band 600 W and X-band 200 W High-Power GaN HEMTs for Radar Transmitters

S-band 600 W and X-band 200 W High-Power GaN HEMTs for Radar Transmitters INFOCOMMUNICATIONS S-band 600 W and X-band 200 W High-Power GaN HEMTs for Radar Transmitters Naoyuki MIYAZAWA*, Makoto NISHIHARA, Kunihiro USAMI, Makoto AOJIMA and Takashi YAMAMOTO ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

More information

= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W

= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W CMPA0060002D 2 Watt, MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

More information

Utilization of GaN HEMT in Power Amplifiers for Green Communication systems

Utilization of GaN HEMT in Power Amplifiers for Green Communication systems Utilization of GaN HEMT in Power Amplifiers for Green Communication systems Abdelaziz M. A.Abdelbar Nahda University, Benu Swief, Egypt, Ayman M. El-Tager MTC, Electronics Dpt., Cairo, Egypt, Hadia S.

More information

Advances in Microwave & Millimeterwave Integrated Circuits

Advances in Microwave & Millimeterwave Integrated Circuits الراديو - جامعة Advances in Microwave & Millimeterwave Integrated Circuits الهندسة آلية عين شمس ١٥ مارس ٢٠٠٧-١٣ Amin K. Ezzeddine AMCOM Communications, Inc. 22300 Comsat Drive Clarksburg, Maryland 20871,

More information

Microwave Office Application Note

Microwave Office Application Note Microwave Office Application Note INTRODUCTION Wireless system components, including gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (phemt) frequency doublers, quadruplers, and

More information

TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier

TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7 3.7 GHz PSAT:.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db Bias:

More information

85W Power Transistor. GaN HEMT on SiC

85W Power Transistor. GaN HEMT on SiC GaN HEMT on SiC Description The is a 85W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar

More information

4 Watt Ka-Band HPA Key Features Measured Performance Primary Applications Ka-Band VSAT Product Description

4 Watt Ka-Band HPA Key Features Measured Performance Primary Applications Ka-Band VSAT Product Description 4 Watt Ka-Band HPA Key Features Frequency Range: 28-31 GHz 3 dbm Nominal Psat Gain: 24 db Return Loss: -8 db Bias: Vd = V, Idq = 1. A, Vg = -.75 V Typical Technology: 3MI.15 um Power phemt Chip Dimensions:

More information

TGA4830. Wideband Low Noise Amplifier. Key Features and Performance. Measured Performance V + = 5V, I + = 50mA. Primary Applications

TGA4830. Wideband Low Noise Amplifier. Key Features and Performance. Measured Performance V + = 5V, I + = 50mA. Primary Applications Wideband Low Noise Amplifier Measured Performance V + = 5V, I + = 50mA Key Features and Performance DC - 45GHz Frequency Range 13dB Gain @ 20GHz 15dB Return Loss @ 20GHz 11.5dBm Typical P1dB 3.2dB Typical

More information

RFHA1004TR7. 25W GaN Wide-Band Power Amplifier 700MHz to 2500MHz. Features. Applications. Ordering Information. Package: Air-Cavity Cu

RFHA1004TR7. 25W GaN Wide-Band Power Amplifier 700MHz to 2500MHz. Features. Applications. Ordering Information. Package: Air-Cavity Cu 25W GaN Wide-Band Power Amplifier 700MHz to 2500MHz The is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, military communication radios and general

More information

it to 18 GHz, 2-W Amplifier

it to 18 GHz, 2-W Amplifier it218 to 18 GHz, 2-W Amplifier Description Features Absolute Maximum Ratings Electrical Characteristics (at 2 C) -ohm system V DD = 8 V Quiescent current (I DQ = 1.1 A The it218 is a three-stage, high-power

More information

DC to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC8401

DC to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC8401 FEATURES Output power for db compression (PdB):.5 dbm typical Saturated output power (PSAT): 9 dbm typical Gain:.5 db typical Noise figure:.5 db Output third-order intercept (IP3): 26 dbm typical Supply

More information

Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model

Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model APPLICATION NOTE Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model Introduction Large signal models for RF power transistors, if matched well with measured performance,

More information

8.5 GHz to 13.5 GHz, GaAs, MMIC, I/Q Mixer HMC521ALC4

8.5 GHz to 13.5 GHz, GaAs, MMIC, I/Q Mixer HMC521ALC4 11 7 8 9 FEATURES Downconverter, 8. GHz to 13. GHz Conversion loss: 9 db typical Image rejection: 27. dbc typical LO to RF isolation: 39 db typical Input IP3: 16 dbm typical Wide IF bandwidth: dc to 3.

More information

ARFTG Workshop, Boulder, December 2014

ARFTG Workshop, Boulder, December 2014 ARFTG Workshop, Boulder, December 2014 Design and measurements of high-efficiency PAs with high PAR signals Zoya Popovic, Tibault Reveyrand, David Sardin, Mike Litchfield, Scott Schafer, Andrew Zai Department

More information

DESCRIPTION. APPLICATIONS Microwave Radios Military Radios VSAT Telecom Infrastructure Test Equipment

DESCRIPTION. APPLICATIONS Microwave Radios Military Radios VSAT Telecom Infrastructure Test Equipment KX105 15 W, 6.0 GHz, GaN HEMT Transistor DESCRIPTION The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface-Mount Technology (SMT) package for high reliability

More information

8 11 GHz 1 Watt Power Amplifier

8 11 GHz 1 Watt Power Amplifier Rev. 1.1 December 2 GHz 1 Watt Power Amplifier Features Frequency Range : GHz 3 dbm output P1dB. db Power gain 3% PAE High IP3 Input Return Loss > db Output Return Loss > db Dual bias operation No external

More information

RFG1M MHZ to 1000MHZ 180W GaN RFG1M MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced

RFG1M MHZ to 1000MHZ 180W GaN RFG1M MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink

More information

TGA3504-SM 2-30 GHz GaAs Wideband Gain Block

TGA3504-SM 2-30 GHz GaAs Wideband Gain Block TGA54-SM Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range:

More information

A 2.469~2.69GHz AlGaN/GaN HEMT Power Amplifier for IEEE e WiMAX Applications

A 2.469~2.69GHz AlGaN/GaN HEMT Power Amplifier for IEEE e WiMAX Applications A 2.469~2.69GHz AlGaN/GaN HEMT Power Amplifier for IEEE 82.16e WiMAX Applications Weijia LI 1, Yan WANG 2, Giovanni GHIONE 3, Fellow, IEEE Department of Electronics, Politecnico di Torino Torino 1129,

More information

GHz Low Noise Amplifier

GHz Low Noise Amplifier 8.0-12.0 GHz Low Noise Amplifier Features Frequency Range : 8.0-12.0 GHz Low Noise Figure < 1.7 db 26 db nominal gain 12 dbm P 1dB High IP3 Input Return Loss > 10 db Output Return Loss > 10 db DC decoupled

More information

Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 8 ma Operational Voltage

Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 8 ma Operational Voltage 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance Output Power: 16W at

More information

CMD217. Let Performance Drive GHz GaN Power Amplifier

CMD217. Let Performance Drive GHz GaN Power Amplifier Let Performance Drive Features High Power High linearity Excellent efficiency Small die size Applications Ka-band communications Commercial satellite Military and space Description Functional Block Diagram

More information

TMS Overview

TMS Overview TMS Overview - 2014 www.teledynemicrowave.com Teledyne Focused on Demanding Applications Technology for a Challenging World Teledyne founded in 1960 Holds 50+ Businesses 9000 employees NYSE Symbol TDY

More information

= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain

= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

More information

On-wafer GaN Power Semiconductor Characterization. Marc Schulze Tenberge Manager, Applications Engineering Maury Microwave

On-wafer GaN Power Semiconductor Characterization. Marc Schulze Tenberge Manager, Applications Engineering Maury Microwave On-wafer GaN Power Semiconductor Characterization Marc Schulze Tenberge Manager, Applications Engineering Maury Microwave Agenda 1. Introduction 2. Setup 3. Measurements for System Evaluation 4. Measurements

More information

TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier

TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier TGA78-CP Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal Gain: > db IM3: -

More information

TGA4811. DC - 60 GHz Low Noise Amplifier

TGA4811. DC - 60 GHz Low Noise Amplifier TGA11 DC - GHz Low Noise Amplifier Key Features GHz Bandwidth 3. db noise figure > 15 db small signal gain 13 dbm P1dB +/- 7 ps group delay variation Bias:.5V, 5 ma.15 um 3MI mhemt Technology Chip Dimensions:

More information

GaN/SiC Bare Die Power HEMT DC-15 GHz

GaN/SiC Bare Die Power HEMT DC-15 GHz GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of mm (Eight 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.

More information

A 1-W GaAs Class-E Power Amplifier with an FBAR Filter Embedded in the Output Network

A 1-W GaAs Class-E Power Amplifier with an FBAR Filter Embedded in the Output Network A 1-W GaAs Class-E Power Amplifier with an FBAR Filter Embedded in the Output Network Kyle Holzer and Jeffrey S. Walling University of Utah PERFIC Lab, Salt Lake City, UT 84112, USA Abstract Integration

More information

= 25 C) Parameter 6.0 GHz 7.5 GHz 9.0 GHz 10.5 GHz 12.0 GHz Units Small Signal Gain db P OUT

= 25 C) Parameter 6.0 GHz 7.5 GHz 9.0 GHz 10.5 GHz 12.0 GHz Units Small Signal Gain db P OUT CMPA601C025F 25 W, 6.0-12.0 GHz, GaN MMIC, Power Amplifier The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a

More information

Ka-Band 2W Power Amplifier

Ka-Band 2W Power Amplifier Ka-Band 2W Power Amplifier Key Features 30-40 GHz Bandwidth > 33 dbm Nominal Psat @ Pin = 20dBm 18 db Nominal Gain Bias: 6 V, 50 ma Idq (1.9A under RF Drive) 0.15 um 3MI MMW phemt Technology Thermal Spreader

More information

2 GHz to 30 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC8402

2 GHz to 30 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC8402 2 GHz to 3 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC842 FEATURES Output power for 1 db compression (P1dB): 21. dbm typical Saturated output power (PSAT): 22 dbm typical Gain: 13. db typical Noise

More information

TGA FL 2.5 to 6GHz 40W GaN Power Amplifier

TGA FL 2.5 to 6GHz 40W GaN Power Amplifier 2.5 to 6GHz 4W GaN Power Amplifier Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Frequency Range: 2.5 to 6 GHz P SAT : 46.5 dbm @ PIN = 26dBm, CW PAE:

More information

0.15-µm Gallium Nitride (GaN) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication

0.15-µm Gallium Nitride (GaN) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication 0.15-µm Gallium Nitride (GaN) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication by John Penn ARL-TN-0496 September 2012 Approved for public release; distribution

More information

27-31 GHz 2W Balanced Power Amplifier TGA4513-CP

27-31 GHz 2W Balanced Power Amplifier TGA4513-CP 27-31 GHz 2W Balanced Power Amplifier Key Features 27-31 GHz Bandwidth > 32 dbm Nominal P1dB 33 dbm Nominal Psat 22 db Nominal Gain IMD3 is 32 dbc @ 18 dbm SCL 12 db Nominal Return Loss Bias: 6 V, 84 ma

More information

Packaged mm-wave GaN, GaAs and Si ICs for 5G and automotive radar

Packaged mm-wave GaN, GaAs and Si ICs for 5G and automotive radar Packaged mm-wave GaN, GaAs and Si ICs for 5G and automotive radar Eric Leclerc UMS 1 st Nov 2018 Outline Why heterogenous integration? About UMS Technology portfolio Design tooling: Cadence / GoldenGate

More information

Switching Behavior of Class-E Power Amplifier and Its Operation Above Maximum Frequency

Switching Behavior of Class-E Power Amplifier and Its Operation Above Maximum Frequency Switching Behavior of Class-E Power Amplifier and Its Operation Above Maximum Frequency Seunghoon Jee, Junghwan Moon, Student Member, IEEE, Jungjoon Kim, Junghwan Son, and Bumman Kim, Fellow, IEEE Abstract

More information

5 6.4 GHz 2 Watt Power Amplifier

5 6.4 GHz 2 Watt Power Amplifier 5 6.4 GHz 2 Watt Power Amplifier Features Frequency Range : 5 6.4GHz 32.5 dbm output P1dB 9 db Power gain 32% PAE High IP3 Input Return Loss > 12 db Output Return Loss > 12 db Dual bias operation No external

More information

A New Topology of Load Network for Class F RF Power Amplifiers

A New Topology of Load Network for Class F RF Power Amplifiers A New Topology of Load Network for Class F RF Firas Mohammed Ali Al-Raie Electrical Engineering Department, University of Technology/Baghdad. Email: 30204@uotechnology.edu.iq Received on:12/1/2016 & Accepted

More information

GaN MMIC PAs for MMW Applicaitons

GaN MMIC PAs for MMW Applicaitons GaN MMIC PAs for MMW Applicaitons Miroslav Micovic HRL Laboratories LLC, 311 Malibu Canyon Road, Malibu, CA 9265, U. S. A. mmicovic@hrl.com Motivation for High Frequency Power sources 6 GHz 11 GHz Frequency

More information

GaN/SiC Bare Die Power HEMT DC-15 GHz

GaN/SiC Bare Die Power HEMT DC-15 GHz GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of 5mm (Four 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.

More information

Gallium Nitride MMIC Power Amplifier

Gallium Nitride MMIC Power Amplifier Gallium Nitride MMIC Power Amplifier August 2015 Rev 4 DESCRIPTION AMCOM s is an ultra-broadband GaN MMIC power amplifier. It has 21dB gain, and >41dBm output power over the 0.03 to 6GHz band. This MMIC

More information

5 6 GHz 10 Watt Power Amplifier

5 6 GHz 10 Watt Power Amplifier 5 6 GHz 10 Watt Power Amplifier Features Frequency Range : 5 6GHz 40 dbm Output Power 18 db Power gain 30% PAE High IP3 Input Return Loss > 12 db Output Return Loss > 7.5 db Dual bias operation No external

More information

Silicon-Carbide High Efficiency 145 MHz Amplifier for Space Applications

Silicon-Carbide High Efficiency 145 MHz Amplifier for Space Applications Silicon-Carbide High Efficiency 145 MHz Amplifier for Space Applications By Marc Franco, N2UO 1 Introduction This paper describes a W high efficiency 145 MHz amplifier to be used in a spacecraft like AMSAT

More information

Advance Datasheet Revision: May 2013

Advance Datasheet Revision: May 2013 Applications Military SatCom Phased-Array Radar Applications Point-to-Point Radio Point-to-Multipoint Communications Terminal Amplifiers X = 4.4mm Y = 2.28mm Product Features RF frequency: 18 to 23 GHz

More information

Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400

Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-1 Features Low Noise Figure: 1.6 db Typical at 3. db Typical at. GHz High Associated Gain: 1.5 db Typical at 1.5 db Typical at. GHz

More information

RF3826TR13. 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz. Features. Applications. Ordering Information RF3826

RF3826TR13. 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz. Features. Applications. Ordering Information RF3826 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose

More information

Wide-Band Two-Stage GaAs LNA for Radio Astronomy

Wide-Band Two-Stage GaAs LNA for Radio Astronomy Progress In Electromagnetics Research C, Vol. 56, 119 124, 215 Wide-Band Two-Stage GaAs LNA for Radio Astronomy Jim Kulyk 1,GeWu 2, Leonid Belostotski 2, *, and James W. Haslett 2 Abstract This paper presents

More information

6-18 GHz High Power Amplifier TGA9092-SCC

6-18 GHz High Power Amplifier TGA9092-SCC 6-18 GHz High Power Amplifier Key Features and Performance Dual Channel Power Amplifier 0.25um phemt Technology 6-18 GHz Frequency Range 2.8 W/Channel Midband Pout 5.6 W Pout Combined 24 db Nominal Gain

More information

6-18 GHz Double Balanced Mixer

6-18 GHz Double Balanced Mixer 6-18 GHz Double Balanced Mixer Features Functional Diagram Passive Double Balanced Topology Low Conversion loss Excellent Isolations between all ports IF Bandwidth of DC to 4GHz 0.15-µm InGaAs phemt Technology

More information

77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet

77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet 77 GHz VCO for Car Radar Systems Preliminary Data Sheet Operating Frequency: 76-77 GHz Tuning Range > 1 GHz Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive

More information

Parameter Frequency Typ Min (GHz)

Parameter Frequency Typ Min (GHz) The is a broadband MMIC LO buffer amplifier that efficiently provides high gain and output power over a 20-55 GHz frequency band. It is designed to provide a strong, flat output power response when driven

More information

= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain

= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain CMPA625F 25 W, 2 MHz-6 MHz, GaN MMIC Power Amplifier Cree s CMPA625F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior

More information

17-35GHz MPA/Multiplier TGA4040SM

17-35GHz MPA/Multiplier TGA4040SM Not Recommended for New Designs Advance Product Information 17-35GHz MPA/Multiplier TriQuint Recommends the TGA43-SM or TGA431-SM be used for New Designs Key Features Product Description The TriQuint TG44SM

More information

GaAs MMIC Power Amplifier

GaAs MMIC Power Amplifier GaAs MMIC Power Amplifier September 2011 Preliminary DESCRIPTION AMCOM s (SN-R) is a broadband GaAs MMIC power amplifier. It has 28dB small signal gain, and >41dBm output power over the 8.5 to 10.5GHz

More information

2-18 GHz Low Noise Amplifier TGA8344-SCC

2-18 GHz Low Noise Amplifier TGA8344-SCC April 3, 2003 2-18 GHz Low Noise Amplifier Key Features and Performance 2 to 18 GHz Frequency Range Typical 4 db Noise Figure at Midband 16 dbm Typical Output Power at 1 db Gain Compression 19 db Typical

More information

Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc.

Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc. February 2014 Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc. Low Noise Amplifiers (LNAs) amplify weak signals received by the antenna in communication systems.

More information

Development of Gallium Nitride High Electron Mobility Transistors for Cellular Base Stations

Development of Gallium Nitride High Electron Mobility Transistors for Cellular Base Stations ELECTRONICS Development of Gallium Nitride High Electron Mobility Transistors for Cellular Base Stations Kazutaka INOUE*, Seigo SANO, Yasunori TATENO, Fumikazu YAMAKI, Kaname EBIHARA, Norihiko UI, Akihiro

More information