Part Number: IGN2735M250
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1 S-Band Radar Transistor IGN2735M250 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum of 250 watts of peak output power with 11dB gain typically. Specified operation is with Class AB bias. When appropriately rated, it is operable under a wide range of pulse widths and duty factors. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. The use of external tuners is not allowed during screening. This device is rated for a peak output power level of P PEAK = 10% duty factor. This corresponds to an average power P AVG = 25W. SAMPLE RF DATA IN BROADBAND RF TEST FIXTURE 250W Data : Freq (GHz) Pout (W) IRL (db) Gain (db) I D (A) N D (%) Droop (db) PSAT Data : Freq (GHz) Pout (W) IRL (db) Gain (db) I D (A) N D (%) Droop (db) Test Conditions: 300us/10%, V DD = 32V, I DQ = 150mA GaN on Silicon Carbide FET High Power Gain Excellent thermal stability Depletion Mode Device Negative Gate Voltage to Bias Bias Sequencing Required See App Note to Prevent Damage Gold Metal System Complete Gold System Gold Bond Wires Gold Package Metal Maximum Reliability Class AB Operation Specified with AB bias Internal Impedance Matching Ease of Use Ultra Low Loss Design BeO Free Package Metal Based Epoxy Seal High Power 50Ω RF Test / Fixture Broadband Long-term Correlation 100% Device RF Screening No External Tuning required Patent Issued US 8,299,857 B2 Page 1 of 7 INTEGRA
2 MAXIMUM RATINGS Screen Parameter Symbol Min Max Units Test Conditions BD Drain-Source Breakdown Voltage V DS-BK V -- BD Drain-Source Voltage V DS V -- BD Gate-Source Voltage V GS V -- BD Storage Temperature Range T STG C -- BD Operating Junction Temperature Range T J C -- BD CW Operation Not rated for CW operation Note Screen 'BD' = parameter qualified By Design. THERMAL CHARACTERISTICS Screen Parameter Symbol Min Max Units Test Conditions BD Thermal Resistance R TH(JC) C/W V DD =V1, I DQ =I DQ1, PW=PW1, DF=DF1, T F =25±5 C, P OUT =250W Note Screen 'BD' = parameter qualified By Design. PROCESSING SPECIFICATIONS Screen Parameter Symbol Min Max Units Test Conditions 100% DC Wafer Probe Per specification. Q1 Wafer DC and RF Qualification Per specification. LM Wire Bond Strength Line monitor per specification. 100% Pre-cap visual inspection Per specification 100% Gross leak test MIL-STD-750D, Method , Test Condition C Note Note Screen 'Q1' = parameter is qualified by assembly and test of 3 pieces minimum per wafer. Screen 'LM' = parameter is qualified by assembly line monitor. DC ELECTRICAL CHARACTERISTICS Screen Parameter Symbol Min Typ Max Units Test Conditions 100% Drain Leakage Current I D-OFF ma V DS = 32V, V GS = -8V, T F = 25±5 C 100% Gate Threshold Voltage V GS-TH V V DS = 32V, I D =150mA, T F = 25±5 C Page 2 of 7 INTEGRA
3 RF ELECTRICAL CHARACTERISTICS Screen Parameter Symbol Min Typ Max Units Test Conditions 100% Input Return Loss IRL db V DD =V1, I DQ =I DQ1, PW=PW1, DF=DF1, T F =T F1, P OUT =P OUT1, F=F1, F2, F3, F4, F5. 100% Power Gain Gp db V DD =V1, I DQ =I DQ1, PW=PW1, DF=DF1, T F =T F1, P OUT =P OUT1, F=F1, F2, F3, F4, F5 100% Drain Efficiency N D % V DD =V1, I DQ =I DQ1, PW=PW1, DF=DF1, T F =T F1, P OUT =P OUT1, F=F1, F2, F3, F4, F5 100% Pulse Amplitude Droop D db V DD =V1, I DQ =I DQ1, PW=PW1, DF=DF1, T F =T F1, P OUT =P OUT1, F=F1, F2, F3, F4, F5 100% 2:1 Load Mismatch Stability VSWR-S 2: V DD =V1, I DQ =I DQ1, PW=PW1, DF=DF1, T F =T F1, P OUT =P OUT1, F=F1, F2, F3, F4, F5 Rotate 2:1 output VSWR through 360 phase. No oscillatory or pulse break-up characteristics allowed on detected output pulse. All non-harmonically related signals must be at least 65 dbc. 100% 3:1 Load Mismatch Tolerance LMT 3: V DD =V1, I DQ =I DQ1, PW=PW1, DF=DF1, T F =T F1, P OUT =P OUT1, F=F1, F2, F3, F4, F5 Rotate 3:1 output VSWR through 360 phase. Post test P O = Pre test P O ±5W Note 1 V1 = 32V; I DQ1 = 150mA; PW1 = 300us; DF1 = 10%, P OUT1 = 250W. Note 2 Test Frequencies: F1 = 2.7 GHz, F2 = 2.9 GHz, F3 = 3.1 GHz, F4=3.3GHz, F5=3.5GHz Note 3 T F1 = 30±5 C = Device flange temperature. Note 4 Screen 'BD' = parameter qualified By Design. RF TEST FIXTURE IMPEDANCE CHARACTERISTICS Frequency (GHz) Z IF (Ω) Z OF (Ω) j j j j j j j j j j4.5 Impedance Definition Page 3 of 7 INTEGRA
4 PACKAGE DIMENSIONAL OUTLINE DRAWING C F I K D A L E S G H M D G B J Page 4 of 7 INTEGRA
5 PERFORMANCE GRAPHS IGN2735M250 Pout vs Pin 300uS,10%,32V IGN2735M250 Gain vs Pout 300us, 10%, 32V Pout (W) Pout 2.7 Pout 3.1 Pout 3.5 Gain (db) Pout (W) Gain2.7 Gain3.1 Gain3.5 Pin (W) IGN2735M250 Efficiency vs Pout 300uS, 10%, 32V IGN2735M250 PSAT VS FREQ 300uS,10%,32V Efficiency (%) Pout (W) Eff 2.7 Eff 3.1 Eff 3.5 PSAT (W) FREQ (GHz) Page 5 of 7 INTEGRA
6 RF TEST FIXTURE Page 6 of 7 INTEGRA
7 DEFINITIONS Data Sheet Status Proposed Specification Preliminary Specification Product Specification This data sheet contains proposed specifications. This data sheet contains specifications based on preliminary measurements and data. This data sheet contains final product specifications. Maximum Ratings Stress above one or more of the maximum ratings may cause permanent damage to the device. These are maximum ratings only operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. Exposure to maximum values for extended periods of time may affect device reliability. DISCLAIMER Technologies Inc. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Technologies Inc. assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Technologies Inc. products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Technologies Inc. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Technologies Inc. for any damages resulting from such improper use or sale. Page 7 of 7 INTEGRA
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MAGX L00 MAGX L0S
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MAGX MAGX S
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PRELIMINARY DATASHEET CGY2171XBUH 6-bit 1-15 GHz Attenuator DESCRIPTION The CGY2171XBUH is a high performance GaAs MMIC 6 bit Attenuator operating in L, S, C, and X- band. The CGY2171XBUH has a nominal
= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain
CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800
which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN
Rev 4.1 May 2017 CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide
PTFB213004F. High Power RF LDMOS Field Effect Transistor 300 W, MHz. Description. Features. RF Characteristics
High Power RF LDMOS Field Effect Transistor W, 7 MHz Description The is a -watt LDMOS FET designed for class AB operation in cellular amplifiers covering the to 7 MHz frequency band. Features include high
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz
Rev. 11 April 201 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance
MQ1270VP LDMOS TRANSISTOR
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ra097008nb-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR
ra097008nb-gr1a Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 9 960 MHz Description The is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
PTFC270051M. High Power RF LDMOS Field Effect Transistor 5 W, 28 V, MHz. Description. Features. RF Characteristics, 2170 MHz
c271m-gr1.3 High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27 MHz.
Innogration (Suzhou) Co., Ltd.
3400-3600MHz, 75W, 28V RF LDMOS FETs Description The ITCH36075B2 is a 75-watt, internally-matched LDMOS FETs, designed for cellular application with frequencies from 3400 to 3600MHz. It can biased at class
CGH55015F2 / CGH55015P2
Rev 4.0 May 2015 CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree s CGH55015F2/CGH55015P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high
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BLL6G1214L Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.
BLL6G1214L-25 Rev. 1 16 February 212 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Symbol Parameter VRF152(MP) Unit V DSS Drain-Source Voltage 130 V I D Continuous Drain T C
VRF52 VRF52MP 5V, 5W, 75MHz RF POWER VERTICAL MOSFET The VRF52 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power
CGH55030F2 / CGH55030P2
Rev 3.2 April 2012 CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high
DISCRETE SEMICONDUCTORS DATA SHEET M3D438. BLF1043 UHF power LDMOS transistor. Product specification Supersedes data of 2002 November 11.
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RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for CW and pulse applications operating at 1300 MHz. These devices are suitable
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Rev. 1 3 ugust 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for
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PRELIMINARY DATASHEET 24-34 GHz Ka-band Low Noise Amplifier DESCRIPTION The is a high performance Ka band Low Noise Amplifier. This device is a key component for high frequencies (25-31 GHz) systems. The
Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 8 W, 48 V, 746 960 MHz Description The PTRA094252FC is a 8-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 746
Preliminary GTVA126001EC/FC
g126001efc-gr1 Thermally-Enhanced High Power RF an on SiC HEMT 600 W, 50 V, 10 1400 MHz Description The TVA126001EC and TVA126001FC are 600-watt an on SiC high electron mobility transistors (HEMT) for
PRELIMINARY DATASHEET
PRELIMINARY DATASHEET CGY2172XBUH 6-bit X-Band Phase Shifter DESCRIPTION The CGY2172XBUH is a high performance GaAs MMIC 6 bit Phase Shifter operating in X-band. The CGY2172XBUH has a nominal phase shifting
RF Power GaN Transistor
Technical Data Document Number: A2G22S190--01S Rev. 0, 09/2018 RF Power GaN Transistor This 36 W RF power GaN transistor is designed for cellular base station applications covering the frequency range
= 25 C), 50 V. Parameter 800 MHz 850 MHz 900 MHz 950 MHz 1000 MHz Units. Small Signal Gain db
CGHV40180F 180 W, DC - 2000 MHz, 50 V, GaN HEMT Cree s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers
transistor is available in a flange and pill package. Package Types: & PN s: CG2H40045P & CG2H40045F
Rev 0.0 - May 2017 CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for applications operating at frequencies from 900 to
Drain Efficiency (%) 10 a120501ea_g1-1. Characteristic Symbol Min Typ Max Unit. Return Loss IRL 10 7 db
PTVA1201EA Thermally-Enhanced High Power RF LDMOS FET W, V, 1200 10 MHz Description The PTVA1201EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 10 MHz frequency band. Features
Symbol Parameter VRF161(MP) Unit V DSS Drain-Source Voltage 170 V I D Continuous Drain T C
V161(MP) 5V, 2W, 15MHz POWER VERTICAL MOSFET The V161 is a gold-metallized silicon n-channel power transistor designed for broadband commercial and military applications requiring high power and gain without
PRELIMINARY DATASHEET
PRELIMINARY DATASHEET 6-bit 6GHz-18GHz Phase Shifter DESCRIPTION The CGY2173UH is a high performance GaAs MMIC 6 bit Phase Shifter operating from 6 GHz up to 18 GHz. The CGY2173UH has a nominal phase shifting
P-Channel 30-V (D-S), MOSFET
SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to
CGH40120P. 120 W, RF Power GaN HEMT FEATURES APPLICATIONS
Rev 3.1 - November 2017 CGH40120P 120 W, RF Power GaN HEMT Cree s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail,
= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W
CMPA006005D 5 W, 0 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree s CMPA006005D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).