InAlN/GaN HEMTs Technologies for Microwave, Fast switching and Mixed Signal Applications
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1 InAlN/GaN HEMTs Technologies for Microwave, Fast switching and Mixed Signal Applications S.DELAGE / S.PIOTROWICZ
2 Summary III-V Lab presentation Motivations Technology for L & S band applications Technology for X to Ka band applications Fast Switching applications E/D mode devices for mixed signal applications Page 2
3 III-V Lab presentation V18 What is III-V Lab? A jointly owned Alcatel-Lucent / Thales /CEA R&D Lab French GIE (Groupement d Intérêt Economique) organization with about 150 R&D experts (incl. 25 from CEA-Leti + ~18 PhD students) Dedicated to epitaxial growth, device and circuit design and manufacturing performing R&T on III-V semiconductor technology and integration with Si circuits and micro-systems Optoelectronic and microelectronic materials, devices and circuits From basic research to technology transfer for industrialisation or to small scale and pilot line production for complementary Alcatel-Lucent / Thales applications High bit rate Optical Fibre and Wireless Telecommunications Microwave and Photonic systems for Defence, Security and Space and looking for valorisation through external cooperation December 2012 Page 3 Page 3
4 III-V Lab presentation V18 CEA-Leti : third partner in III-V Lab Alcatel-Thales III-V Lab becomes III-V Lab Access to Leti Si microelectronic and microsystem technology platforms Thales (TRT Fr) ~ 50p. 40% Alcatel Lucent Bell Labs Fr. ~ 50p. 40% CEA Leti 20% R&D contracts 22~35 p/y Leti technology platforms December 2012 Page 4 Page 4
5 III-V Lab presentation V18 Main research activities and applications Opto-electronics Tx/Rx photonic integrated circuits for the next generations of opticalfibre communication networks : 10x10Gb/s, 40Gb/s and above, 100Gb/s Ethernet IR laser diodes and photonic micro-systems for optronic systems : DIRCM, detection of toxic gases and explosives, microwave links over optical fibres, laser pumping for atomic clocks and cold atoms sensors Advanced IR photo-detectors Micro-electronics GaN power HEMT MMIC technology for radars, electronic warfare, and wireless communication systems InP HBT technology for fast digital and mixed signal circuits : 40Gb/s and above front-end circuits, broadband ADCs, December 2012 Page 5 Page 5
6 III-V Lab presentation V18 III-V Lab implantation Thales Research and Technology Palaiseau Alcatel-Lucent /Bell Labs Fr. Marcoussis December 2012 Page 6 Page 6
7 7 Motivations : Why AlInN/GaN HEMTs? In 17 Al 83 N/GaN : - Spontaneous polarization without lattice mismatch Spontaneous polarization of GaN, InN and AlN compounds functions of lattice constant Spontaneous polarization higher : More electrons density More power density Lattice match : Less lag effects? Better reliability? ΔP 0 (Cm -2 ) Piezo (Cm -2 ) Ns (cm -2 ) Al 30 Ga 70 N/GaN In 17 Al 83 N/GaN Page 7
8 Structure of InAlN HEMTs Source : EPFL-UltraGaN Project Structure of studied 5nm -> 50% of the 11nm -> 85% of the charges AlN layer enhances sheet carrier mobility Sheet resistance # 320 W/sq. Sheet carrier density ns # 1.5E 13 cm -2 Page 8
9 Technology for S-Band Applications Technology for S-Band Applications Page 9
10 Power Device Manufacturing 2 inch Device cross section Page 10
11 Ig,Id (ma/mm) Id (ma/mm) Gm (ms/mm) Static results Id Vgs (V) Ig Vgs (V) Gm Id Idss = 600mA/mm Ids max = Vds=+1V Gm max = Vgs=-0.6V Ig < 20 Vds=10V Page 11
12 Small Signal Characterization F T = 15 GHz F MAG =38 GHz Gm # 300 ms/mm Gd # 3.2 ms/mm 19 db of 2 GHz Cgs # 3.4 pf/mm Cgd # pf/mm Cds # pf/mm Page 12
13 Pout (dbm), PAE (%) & Gp (db) PAE (%) Large Signal Characterization On wafer large signal characterization : 2mm GHz Pout Pin (dbm) PAE Gp Pout = 39dBm (8W - 4W/mm) with PAE = 62% and Gp=10.7dB (Vds0=20V Ids0=60mA - Zl=17+j18 W) V 25V Pout (W/mm) 30V 35V Pout from 4 to 8W/mm with associated PAE from 62% to 53% (no re-tune at each vds) Page 13
14 Amplifier realization power package GaN die RF out RF in High K matching networks diamond Heat spreader InAlN/GaN based Power amplifier Can be measured in single ended or balanced configuration Page 14
15 Output power (W) and PAE (%) Gain (db) Output power (W) and PAE (%) Gain (db) L-Band (2GHz) High Power Packaged Amplifiers Measurements pulsed 10µs/10%. Pout CW mode. Pout Gp Gp PAE PAE Input power (W) Input power (W) Vds=30V and Ids 0 =0.1A Vds=30V and Ids 0 =0.1A. 105W - CW reached (Pdiss = 4.5W/mm -> Tchannel = 260 C ) 140W - pulsed conditions ( Tchannel = 125 C) Page 15
16 High Temperature DC Measurements (ULM university Germany) First time a transistor operates up to 1000 C! Page 16
17 I GS (ma/mm) I D (A/mm) Thermal stability of 3 nm barrier InAlN/GaN HEMTs 0,6 3.5 nm InAlN device at RT 0,6 3.5 nm InAlN device after 1000 C stress I D (A/mm) 0,5 0,4 0,3 0,2 0,1 0, at RT after 1000 C V DS (V) +2 V +1 V 0 V -1 V C 0,5 0,4 0,3 0,2 0,1 0, V DS (V) +2 V +1 V Ultra thin barrier (few nm) InAlN/GaN heterostructure still working after 1000 C for 30min step. Very promising for high robustness demanding applications. 0 V -1 V Gate voltage (V) Page 17
18 Technology for X to K-Band Applications Technology for X to Ka-Band Applications Page 18
19 Id (A/mm) db 0.25µm technology - pulsed I-V and Sij results Idss ~ 1.2A/mm and Vgs = 0.5V Gm max ~ 450mS/mm Vp~ 3.8V Polarisation (Vgs0,Vds0) Vgs = -4.5 V (0;0) Vgs = -4.5 V (-4.5;0) H 21 ² 0.25µm F T # 30 GHz F MAX # 80 GHz Vgs = -4.5 V (-4.5;25) 0.8 MSG/MAG Fk # 27 GHz 0.6 Vgs = 0.5 V 0.4 Vgs = -0.5 V Vgs = -1.5 V 14dB/10 GHz 0.2 Vgs = -2.5 V Vgs = -3.5 V 11.5dB/20 GHz 0 Vgs = -4.5 V dB/30 GHz Vds (V) Pulsed I-V measurements Frequency (GHz) Page 19
20 Pout (W) PAE (%), & Gp (db) Load-Pull 10 GHz 250µs pulsed W (10.8W/mm) 5.7W (8.7W/mm) % 45% 40% 2 1 4W (6.6W/mm) Pin (dbm) Pin (dbm) 8x75µm - A-Class (500mA/mm) Vgs 0 =-2.1V Vds from 20V to 30V Output power from 6.6W/mm to 10.8W/mm PAE from 45% to 40% Page 20
21 Gain (db), Pout (dbm) PAE (%) World first demonstration of 20 GHz CW InAlN/GaN Power amplifier Vds 1st_stage =18V, Vds 2nd_stage =20V, Ids= 250mA/mm, Pin (dbm) Pout meas (dbm) 5 Pout mod (dbm) Gain meas (db) 0 Gain mod (db) PAE meas (%) PAE mod (%) 20GHz : Pout = 4.5W with 20% PAE and 12B of linear gain 20 GHz AlInN/GaN amplifier In test JIG Good comparison with the simulation Page 21
22 Technology for Fast Switching Applications Technology for Fast Switching Applications Page 22
23 Technology for Fast Switching Applications Enveloppe Tracking Puissance Alimentation DC Enveloppe (BP:5MHz): - Signaux I & Q - Signal enveloppe Traitement Modulateur de polarisation Puissance de Polarisation: 50V 5A Signal RF modulé Amplificateur Page 23
24 Cellule de commutation Mesures à Vdd=50V, fcommut=50 & 100MHz Mesures: Rch=500 Ohms, Vdd= 50V, DC = 50% 10ns Fcommut= 50 MHz 5ns Fcommut=100MHz Page 24
25 Modulateur à 4 niveaux Mesures d un signal sinusoïdal fcommutation=6*fenveloppe Fenv=3MHz (Fc=18MHz) Fenv=8MHz (Fc=48MHz) Page 25
26 Technology for Mixed-Signal Applications Technology for Mixed-Signal Applications Page 26
27 Technology for Mixed-Signal Applications TRIQUINT & University of Notre-Dame Page 27
28 Technology for Mixed-Signal Applications TRIQUINT & University of Notre-Dame Page 28
29 Remerciements Merci de votre attention! Contacts: Page 29
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