Microwave & RF 22 nd of March 2018 D. FLORIOT

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1 Microwave & RF 22 nd of March 2018 D. FLORIOT

2 Outine Introduction GaN technology roadmap GH15-10 : Up to Ka band GH10 : Towards high frequency (Q / V bands) GaN : Technology & Integration 2

3 UMS at a glance Open European source of RF MMIC solutions, GaAs and GaN foundry services Core mission: European source for Defense & Space III-V Industrial facilities in: Ulm (Germany): GaAs & GaN technology development and production Villebon (France): product development, back-end production and support 93 M turnover (2017) & profitable 420 people Long heritage of supplying to most demanding applications 3

4 UMS offer, markets & technology platform DEFENCE & SECURITY SPACE AUTOMOTIVE & SENSORS TELECOM URE URE Phased array radar Electronic warfare Security applications Communication satellites Earth observation Scientific mission 24/79GHz short range radar 77GHz long range radar Sensors/road tolling Point to point radio links VSAT terminals Base stations FOUNDRY SOLUTIONS Wafers & services Packaging services Known good die and packages OFFER PRODUCT SOLUTIONS RF MMICs ASICs & standard products Die and packaged products Multi-chip modules INTERNAL FOUNDRY European, ITAR free GaAs & GaN technology specialised TECHNOLOGY PLATFORM EXTERNAL FOUNDRY GaAs & SiGe technology High volume needs Commercial applications PACKAGING Internal specialised High volume QFN Hermetic and power COMPETENCE NETWORK Analysis capability R/D Institutes partnerships 4

5 GaN Technology Portfolio 5

6 Interests regarding market GH15 10 GH10 up to 35 GHz Seen as an attractive technology to offer a better compromize Efficiency / Absolute Power for all marker drivers replacing specially GH25-10 up to 55 GHz. Replacement of GH15-10 Market drivers : Defense, Space, Telecom (BTS, PtP, 5G) Architecture Driver: Active Antenna / MIMO But more and more full Si RF Transceiver 6 solutions are considered to fit agressive cost production & power reduction by emissive cell.

7 GaN technology vs 5G Bands GH15-10 GH

8 GH15 Technology

9 GH15 technology Main technology features AlGaN/GaN on SiC substrate 0.15-µm gate length 70 µm substrate thickness Source-Terminated Field-Plate transistors BCB protection available as option Parameter Minimum Nominal Power 30GHz (W/mm) GHz (%) Associated Power 30 GHz Minimum Drain Voltage bias Ids+ (A/mm) > 1 > 1.2 Gm max (ms/mm) Fmax (GHz) > 80 > 100 MTF (Median Time to Failure) years 225 C 20 years 9

10 Some GH15 results: 30-GHz LP measurements Performances at 30GHz, 20V: Peak PAE=39%, Pout(5dBc)=3.6W/mm Glin=11dB Low gate current (< 25V during power sweep) and good homogeneity Example of results : 5samples 6x50µm at 25V, 200mA/mm, optimum Pout load Average results at 200mA/mm and different Vd bias 10

11 Some GH15 results: 18-GHz LP measurements Example of results: 3 samples 8x75µm, at 20V, 100mA/mm, Optimum PAE load Performances at 18GHz, 20V: Peak PAE> 55%, Pout(5dBc)=4.3W/mm Glin=15dB Average results at 100mA/mm and different Vd bias 11

12 12 Preliminary Results Ka Band

13 13 Preliminary Results Ku Band

14 GH Summary Early access in Q2 / 2018 End of Qualification : Q3 / 2019 Including test to enter into the EPPL / ESA 14

15 GH10 Technology

16 GH10 - Strategy Strategy: Short Gate length Material selection versus technical specifications, processing and supply chain need to be re-considered. Focus on InAlN, InGaAlN and AlN barrier with AlGaN as fallback Partnerships : 3-5lab, IEMN, IAF Different commercial suppliers 16

17 Gate dimension (T-gate) Reduction of gate dimensions to improve high frequency performance Metallization thickness Gate length ( nm) + gate head Ex InGaAlN epi with improved doping distance Ohm Similar IDS+ Smaller dimensions more negative Vg100 higher Idl + IdlHV lower Sth higher PAE, P_out, Gt 17

18 18 UMS/IEMN LP 30 and 40 GHz comparison Load-pull measurement 4x50µm LP at 40GHz (IEMN) and 30GHz (UMS)

19 GH Summary Material choice represents a key step as being probably a base for next generation (W band). Early access in Q3-Q4 / 2019 End of Qualification : Q4 /

20 GaN technology & Integration UMS Change of Paradigm : Towards more integration Application driven Packaged single die Multi-chip module Mixed technologies: GaAs, GaN, SiGe SIP Mixed techno Feasibility phase SIP Wafer level packaging Mixed techno integration Innovation integration Bare die Internal pilot line External volume capability 20 Move from a product based to a capability based offer

21 Wafer Level System in Package & Integration breakthrough for Defence & Space applications Wafer Level integration of Heterogeneous technologies offer new perspectives for RF Front End Integration 5G_GaN2 Demonstrators 21

22 GaN technology : A breakdown in integration scheme For UMS : to be the key supplier in integrated system of heterogeneous technologies Cost Benefit due to collective approach at wafer level Down scaling in RF electronics at wafer level Concept of One chip - One Front End Module Secured and long term access Benefit for system platforms Aerospace New generation of Radio / Telecom Missile Space & Satellite constellation Security systems (crypto communicaition) 22

23 GaN technology vs Integration Route towards System In Package using Wafer Level Packaging approach GaN technology with adequate interfaces (bump, hot vias, Cu compliant) Breakdown in Integration / Cost / Supply chain 23

24 Development partly funded by THANKS for your attention! 24

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