A scalable EEHEMT model for 0.25 μm GaAs phemt foundry process

Transcription

1 Chengdu HiWafer Semiconductor Co., Ltd. A scalable EEHEMT model for 0.25 μm GaAs phemt foundry process Dr. Yongbo Chen 6/30/2017

2 Outline 1 Introduction 2 EEHEMT Model 3 Results and Discussions 4 Conclusions

3 Outline 1 Introduction 2 EEHEMT Model 3 Results and Discussions 4 Conclusions

4 HiWafer Introduction HiWafer is Chinese first pure-wafer foundry service provider, which provides 6-inch GaAs and GaN process for RF and microwave applications. It located in Chengdu, SiChuan, with a total of 5000 m2 of clean room.

5 Facility HiWafer has world-class semiconductor processing facilities

6 Technology HiWafer has advanced technology and R & D capabilities Reliability& Yield Tech. Device design& modeling Process Simulation Tech. Core Technology GaAs/GaN Measurement Tech. Manufacture Tech. 6-inch GaAs process phemt HBT 6-inch GaN process HEMT/SiC Si 2-4 寸 InP LD/PD process

7 Process Category HiWafer strives to become an international foundry service provider HiWafer Process Category GaN GaAs GaN HEMT/SiC GaN HEMT/Si InGaP HBT Switch phemt Power phemt LN phemt E/D phemt 0.25μm 0.15μm 0.5-1μm 1-2μm 0.5μm 0.10~0.25μm 0.10~0.15μm 0.10~0.5μm BiFET (2um/0.5um)

8 Process Roadmap HiWafer Process Roadmap m GaAs phemt (PPA25) IPD 0.25 m GaN/SiC HEMT 0.15 m GaAs Power phemt 0.15 m GaAs LN phemt 0.25 m GaAs E/D 0.5 m GaN/SiC HEMT 0.10 m GaAs Power phemt 0.10 m GaAs LN phemt 0.15 m GaAs E/D 2µm GaAs HBT GaAs BiFET Q2 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q

9 Process Roadmap IPD 0-100GHz 0.25um GaAs phemt 0-20GHz 0.25um GaN HEMT 0-18GHz 2um GaAs HBT 0-10GHz PV M2 TFR PL M1 BC EM EC BP ISO 镀金 CC

10 PPA25 Process Process Features: 0.25 μm optical T-Gate InGaAs channel phemt design Air Bridge Major application for power amplifier below 20 GHz

11 PPA25 Process PPA25 Process Flow (1) ALIGNMENT MARK (2) OHMIC METAL (4) WIDE RECESS (3) IMPLANT ISOLATION (5) T-GATE (6) NITRIDE VIA 1 (7) THIN FILM RESISTOR (8) METAL 1 (9) NITRIDE VIA 2 (10) ROW COLUMN ID * (11) SPAN (12) METAL 2 phemt Resistor Capacitor (13) PROTECTION LAYER * (14) WAFER THINNING (15) BACKSIDE VIA (16) BACKSIDE STREET

12 PPA25 Spec The performance of PPA25 reached the international advanced level Index Unit HiWafer Spec HiWafer Measure W* T* U* G* Wa* Idss ma/mm 350+/ Gm_max ms/mm 370+/ ma/mm 480+/ Vp V / V -18 +/ ft GHz 65+/ fmax GHz > Rs_Epi Ohm/Squ 160+/ TFR Ohm/Squ 50+/ MIM Cap pf/mm2 600+/ mw/mm > >900 >900 >900

13 PPA25 PDK 9/28/2016, HiWafer released Chinese first GaAs phemt PDK HW_PPA25001_Design_Package_v Technology Introduction 2. Process Design Kit 3. Design Manual 4. Qualification Report 5. Measurement Data 6. History File

14 PPA25 PDK Complete Functional PDK Schematic simulation EM simulation PDK Layout DRC/LVS

15 Outline 1 Introduction 2 EEHEMT Model 3 Results and Discussions 4 Conclusions

16 EEHEMT Introduction Usability for 易于电路设计 Circuit Design Convergence 收敛性 Extrapolation 外插准确性 Capability 物理模型 Physical Model Compact 紧凑电路模型 Model 行为模型 Behavioral Model Physical 物理意义 Insight 易于模型建立 Easy Modeling Operation 适用范围 Range Compact model is preferred for foundry PDK

17 S Equivalent Circuit Topology L g R g Q gd0 R d L d I gd R gd parasitics Q gs RiI gs I ds Q ds Current source Diode R s Nonlinear capacitor L s EEHEMT D Igd Rd G Rg G + - Y Qgy Qgc C + - Rid Ids Ris D S Rdb B Cbs Idb Cdso Igs Rs

18 EEHEMT Modeling Procedure Cold-FET Measurement IV & Specific Measurement Power Measurement Size&Temp variation Measurement Hot-FET Measurement -Bias-dependant S parameters -DC IV -Diodes -Thermal effects -Freq. dispersion -Loadpull -Power sweep -S parameter -DC IV -Loadpull -Power sweep Small signal fitting Large signal fitting Validation and refinement Scaling related parameters fitting Non-linear Capacitance Small Signal Model EEHEMT Model Model Validation Scalable EEHEMT Model

19 Small Signal Model Extrinsic parameters Cold Pinchoff Cpg Cpd Cpgd Cold Forward Small signal equivalent circuit model Lg Ld Ls Rg Rd Rs

20 Small Signal Model Intrinsic parameters Hot FET Intrinsic elements

21 Large Signal Model Piecewise Character Description Description Vto Zero bias threshold Vgo Gate-source Vbc Deltgm Gm roll-off to tailoff transition voltage Slope of gm compression Vba Gmmax Gm compression tailoff Peak gm Parameters Parameters Parameters Vco Alpha Description Voltage where gm compression begins Gm saturation to compression transition

22 Large Signal Model Frequency Dispersion D Gm_RF Igd Rd Gm_DC G Rg G + - Y Qgy Qgc C + - Rid Ids Ris D S Rdb B Cbs Idb Cdso Igs Rs S Vtoac Kapaac Deltgmac Description Zero bias threshold Output conductance Slope of gm compression Description Parameters Parameters Parameters Description Gammaac Gm parameter Vdeltac Control linearization point Peffac Self-heating effect Vtsoac Subthreshold onset voltage Gmmaxac Peak gm

23 Large Signal Model Thermal Effect I g g ds m ds ' Ids Pdiss 1 Peff ' gm Pdiss (1 ) Peff 2 ' ' Ids gds Peff Pdiss (1 ) Peff 2 Peff=2 Peff=3

24 Large Signal Model Size Scaling P eff TGW G TGW mmax R e G is m TGW max ac TGW C12sat e TGW Deltgm TGW TGW: Total Gate Width (μm) Note: This scaling method ignore the interaction effect between number of figure and unit gate width. 2x150? = 4 x75

25 Large Signal Model Temperature Scaling ' Vto Vto Temp (0.115 ln( 273) 0.343) P P ( Temp eff ' 5 2 eff Temp 1.27) Is 0.41 e Temp N e Temp G G ( Temp ' 10 4 mmax ac mmax ac Temp Temp Temp 1.03)

26 Outline 1 Introduction 2 EEHEMT Model 3 Results and Discussions 4 Conclusions

27 Model Features phemt with BackVia phemt without BackVia SEM Number 8 6 Model Features: DC, S, power, PAE, etc Wg(μm) Scaling with size and temp optimized for PA design

28 Small Signal Model Devices Fitting Results for scalable small-signal Model 2X50μm (red--simulation,blue--measurement) S 21 /3 S 21 /4 S 21 /4 S 12 2 S 12 2 S 12 2 S 22 S 11 S 11 S 22 S 22 S11 Vd=2V,Id=50mA 2X75μm S 21 /3 S 12 3 Vd=3V,Id=150mA S 21 /3 S 12 3 Vd=4V,Id=250mA S 21 /5 S 12 3 S 22 S 11 S 22 S 11 S 22 S 11 Vd=2V,Id=50mA Vd=2V,Id=150mA Vd=2V,Id=250mA

29 Small Signal Model 4X25μm(red--simulation,blue--measurement) S 21 /5 S 21 /3 S 21 /4 S 12 2 S 22 S 11 S 12 2 S 22 S 12 3 S 22 Vd=2V,Id=50mA 4X75μm S 11 Vd=3V,Id=150mA S11 Vd=4V,Id=250mA S 21 / 5 S 12 3 S 21 / 5 S 12 3 S 21 / 5 S 12 5 S 22 S 22 S 22 S 11 S 11 S 11 Vd=2V,Id=50mA Vd=2V,Id=150mA Vd=2V,Id=250mA

30 Scalable EEHEMT Model Devices Fitting Results for scalable EEHEMT Model Power sweep Pout/Gain/PAE Circle Gain Pout PAE Pout S Parameters PAE Gain

31 Scalable EE-HEMT Model 4 x 75 μm 2 x 75 μm VGS=-1.5 to -0.5 V, step=0.1 V VDS=0 to 8 V, steps=0.5 V

32 Scalable EE-HEMT Model 4 x 75 μm 2 x 75 μm VGS=-1.5 to -0.2 V, step=0.05 V VDS=2 V

33 Scalable EE-HEMT Model 4 x 75 μm VGS=-0.7 V VDS=8 V

34 Scalable EE-HEMT Model 4 x 75 μm 2 x 75 μm 50 Ω Maximum PAE Maximum Pout VGS=-0.7 V VDS=8 V Temp=25 Freq=10GHz

35 Circuit Verification Standard-MMIC Fitting Results

36 Circuit Verification A Wideband PA MMIC Fitting Results Freq:5-20GHz, Gain:23dB, Psat:22dBm, P-1dB:20dBm

37 Outline 1 Introduction 2 EEHEMT Model 3 Results and Discussions 4 Conclusions

38 Conclusions HiWafer provides advanced 6-inch GaAs and GaN foundry process A high accurate and verified EEHEMT model has been presented, which is scalable with device size and temperature This model is optimized for class A & AB PA design, if the model is used for other application such as switch or LNA, care should be taken Future work: a) Improve the scaling accuracy by taking account for the interaction effect b) Scalable noise model c) Corner model and statistic model

39 Chengdu HiWafer Semiconductor Co., Ltd. Dr. Yongbo Chen