Gallium Nitride & Related Wide Bandgap Materials and Devices
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1 Gallium Nitride & Related Wide Bandgap Materials and Devices Dr. Edgar J. Martinez Program Manager DARPATech 2000
2 GaAs IC Markets 1999 Market $11 Billion 2005 Market $20 Billion Consumers 2% Computers 3% Automotive < 1% Industrial 4% 1999 Communications 87% Fiber Optics 11% Wireless Code 1% Wireless Telephony 70% Satellite 25% Telecommunications 4 % Military 3% ($330M/year)
3 GaAs IC Market SHIPMENT VALUE, US $MILLIONS MMIC Analog GaAs Digital GaAs DARPA GaAs Investment MAFET Commercial Wireless DARPA INVESTMENT, US$MILLIONS Yesterday s military challenges became today s commercial reality
4 Unmet Challenges in RF Analog Front Ends ❾ Power Density > 1 W/mm ❾ Multi-octave Bandwidth ❾ High Efficiency > 50% ❾ Linearity ❾ Low Noise Figures ❾ Low Phase Noise X Band Ka Band V Band W Band Future DARPA Focus
5 Electronic Properties of Semiconductor Materials Si (----) GaAs (AlGaAs/ InGaAs) InP (InAlAs/ InGaAs) 4H SiC (----) GaN (AlGaN/ GaN) Bandgap (ev) Electron mobility (cm 2 /Vs) Saturated (peak) electron velocity (x10 7 cm/s) 2DEG sheet electron density (cm -2 ) Critical breakdown field (MV/cm) Thermal conductivity (W/cm-K) Relative dielectric constant ( εr ) NA <4 x <4 x NA 20x > P E max 4 g Silicon cannot provide the power-bandwidth product for military applications
6 III-N N Material Challenges ❾ Substrates difficult to produce ❾ High temperature material growth process ❾ Defect rampant ❾ Low hole mobility ❾ Deep donors and acceptors
7 Limitations of Today s Solid-State State Devices Intrinsic Thermal Properties I Si FET Microwave Output Power Thermal Management Properties GaAs GaAs GaN GaN Eg Eg (ev) (ev) v s (10 s ( cm/s) cm/s) Output Power Intrinsic Material Electrical Properties V P out = ( I V)/8
8 Maximum Power (Watt) Current Technology Limitations 100,000 10, and Potential Improvements Theoretical Limit for GaN Power Devices Theoretical Limit for GaAs Power Devices Commercial Communications Base Stations COMMERCIAL TELE-COMMUNICATIONS AIR DEFENSE & SURVEILLANCE RADAR EW JAMMERS Power DARPA Technology Goals DBS SHF SATCOM RADAR ARRAY POTENTIAL IVHS 4 2 g s π Zn F EHF SATCOM POTENTIAL IVHS EW JAMMERS EHF SATCOM SMART WEAPONS Frequency (GHz) max = MISSILE TRANSMITTERS EW PHASED ARRAY MCMs E SMART WEAPONS υ Properties Properties GaAs GaAs GaN GaN Eg Eg (ev) (ev) v v s (10 s ( cm/s)0.8 cm/s) Today s Vacuum Tube Regime Today s Solid State Regime
9 GaN - A Disruptive Technology State-of-the-art Microwave Power Module Future RF Single Power Chip in an Advanced Package MMIC SSA RF Input 270 V Input HV Power Supply IPC Modulator Vacuum Power Booster BW GHz Pout = 40 Watts CW PAE < 30% Vol. > 35 cu in. Weight > 3 lbs RF Output ❾ 10X to 100X output power ❾ Multi-octave bandwidth operation ❾ >35X reduction in volume ❾ >50X reduction in weight GaN PAmp High power chips replace heavy and bulky RF power combiners and Microwave Power Modules
10 WBG Compound Semiconductors Focus Areas ❾ Material Technology Bulk Crystal Epitaxial Materials Advanced Substrates & Wafers Epitaxial Materials ❾ Device Technology B C Vb2 Electron Devices ❾ Thermal Control & Packages Integrated Circuits
11 Technical Strategy Comprehensive Effort is Required for Development of Robust Technology MMIC Performance System Performance Packaging & Thermal Management Material Properties & Parameters Device Performance Apply knowledge & Experience from GaAs MMIC Community Leverage from Emerging GaN GaN Commercial Developments Economies of of Scale
12 Military Applications Multifunction RF Systems Radar Electronic Surveillance High Speed Communications Electronic Warfare Smart Weapons
13 System Benefits Maximizes bandwidth utilization for multifunctionality Ability to track targets in heavy clutter or in the presence of enemy jamming Reduced system size, cooling requirements, and cost
14 WBG Semiconductors Optical Benefits UV LEDs BANDGAP ENERGY (ev) AIN GaN SiC ZnO InN 200nm 310nm UV 460nm Blue 555nm Green 650nm Red Violet Laser Diodes Blue Light Emitting Diodes LATTICE CONSTANT (A) White Light
15 UV Solar Blind Detectors & Current and Future Missile Warning Systems Ground Ground vehicle vehicle self self protection protection Airborne Airborne missile missile threat threat warning warning AAA/MG AAA/MG detection detection and and estimation estimation UV UV search search and and track track Biological Biological agent agent detection detection Engine Engine monitoring monitoring Combustion Combustion control control AN/AAR-47 Ultraviolet Helos Transports AN/AAR-57 Ultraviolet Helos Transports Tactical Today s Technology Bulky, Bulky, Fragile Fragile and and Expensive
16 Commercial Opportunities for GaN ❾ Traffic lights ❾ Illumination ❾ Automotive ❾ Medicine ❾ Outdoor displays ❾ Mass data storage ❾ Wireless communications GaN Sales ($ Billion) > $5 B Market Year Data Source: Strategies Unlimited 1997 The The military requirements drive analog and and UV UV detector applications The The commercial opportunities drive optoelectronic applications
17 Summary ❾ GaN enabling technology for many military applications ❾ Many material and device challenges ❾ Technical strategy requires comprehensive development efforts with many industry and academia partnerships ❾ Significant system benefits anticipated ❾ Commercial interest will not meet military needs DARPA is is in the process of creating new opportunities with WBG semiconductors
More specifically, I would like to talk about Gallium Nitride and related wide bandgap compound semiconductors.
Good morning everyone, I am Edgar Martinez, Program Manager for the Microsystems Technology Office. Today, it is my pleasure to dedicate the next few minutes talking to you about transformations in future
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