Continental Device India Limited

Continental Device India Limited

Continental evice India Limited n ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLNR EPITXIL TRNSISTORS C B E BC549,.B,C Low Noise Transistors BSOLUTE MXIMUM RTINGS (T a =25ºC) ESCRIPTION

Continental Device India Limited

Continental evice India Limited n ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLNR EPITXIL TRNSISTORS C B E BSOLUTE MXIMUM RTINGS (T a =25ºC) ESCRIPTION SYMBOL BC413 BC414 UNITS

CDIL BC107/108/109 Transistor

ELECTRON DATA SHEET CDIL BC107/108/109 Transistor Order Code Manufacturers Part No Description 550-001 BC107B Low noise general purpose amplifier 550-029 BC108 Low noise general purpose amplifier 550-002

Continental Device India Limited

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS E C B High Current Transistor ABSOLUTE MAXIMUM RATINGS (T a =25ºC) DESCRIPTION

Continental Device India Limited

n ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRNSISTOR With Built - in Integrated Diode between Emitter & Collector BSOLUTE MXIMUM RTINGS DESCRIPTION Collector Base oltage

Continental Device India Limited

Continental Device India Limited n ISO/TS6949 and ISO 9 Certified Company NPN SILICON PLNR POWER TRNSISTOR 2N3773 Complementary 2N669 General Purpose mplifier specially suited for Power Conditioning pplications

Continental Device India Limited

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS 2N3903 / 2N3904 For Lead Free Parts, Device Part # will be

Sales: Technical: Fax:

DATA SHEET Transistors Order code Manufacturer code Description 81-0010 n/a BC107 NPN GENERAL PURPOSE TRANSISTOR RC 81-0012 n/a BC107B TO18 50V NPN GP TRANSISTOR (RC) 81-0014 n/a BC108 NPN GP TRANSISTOR

SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC636 BC637 BC638 BC639 BC640 NPN PNP

Continental Device India imited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 ic# QSC/-000019.3 SIICON PANAR EPITAXIA TRANSISTORS BC635 BC636 E C B Driver Stages of Audio Amplifiers Applications

n/a BFY50 TRAN NPN 35V 1A TO39 RC n/a BFY51 TRAN NPN 30V 1A TO39 RC n/a BFY52 TRAN NPN 20V 1A TO39 RC

DATA SHEET Transistors Order code Manufacturer code Description 81-0120 n/a BFY50 TRAN NPN 35V 1A TO39 RC 81-0122 n/a BFY51 TRAN NPN 30V 1A TO39 RC 81-0124 n/a BFY52 TRAN NPN 20V 1A TO39 RC Transistors

NJD1718, NJVNJD1718. Power Transistors. PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS

Power Transistors PNP Silicon For Surface Mount pplications Designed for highgain audio amplifier and power switching applications. Features Low ollectoremitter Saturation oltage High Switching Speed Epoxy

LOW V CE(SAT) PNP SURFACE MOUNT TRANSISTOR

DPLS16 LOW V E(ST) PNP SURFE MOUNT TRNSISTOR NEW PRODUT Features Epitaxial Planar Die onstruction omplementary NPN Type vailable (DNLS16) Surface Mount Package Suited for utomated ssembly Lead Free/RoHS

DSS5240T. Features. Mechanical Data NEW PRODUCT. Application. Ordering Information (Note 4 & 5) Marking Information

YM NEW PRODUT 40V PNP LOW STURTION TRNSISTOR IN SOT23 Features BV EO > -40V I = -2 high ontinuous ollector urrent I M = -3 Peak Pulse urrent Low Saturation Voltage -225mV Max @ I = -. R E(ST) = 90mΩ at

BC817-16Q /-40Q. Mechanical Data. Description. Features. Ordering Information (Notes 4 and 5) Marking Information

45V NPN SMALL SIGNAL TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV EO > 45V I =.5A

FMMT491Q. Mechanical Data. Description. Feature. Ordering Information (Notes 4 & 5) Marking Information 60V NPN MEDIUM POWER TRANSISTOR IN SOT23

60V NPN MEDIUM POWER TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature BV EO > 60V = 1A

Top View Device Symbol Top View Pin-Out

YWW NEW PRODUT 500V PNP HIGH PERFORMANE TRANSISTOR IN Features BV EO > -500V I = -150mA High ontinuous urrent I M = -500mA Peak Pulse urrent Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen

2N4403 / MMBT4403 PNP General-Purpose Amplifier

2N443 / MMBT443 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 5 ma. EB TO-92 SOT-23 Mark:2T B E Figure. 2N443

DZTA42. Features. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 DZTA42

3V NPN HIGH VOLTAGE TRANSISTOR IN Features BV EO > 3V I = 5mA High ollector urrent 2W Power Dissipation Low Saturation Voltage V E(sat) < 5mV @ 2mA omplementary PNP Type: DZTA92 Totally Lead-Free & Fully

2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier

2N396 / MMBT396 / PZT396 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of ma to ma. EB Ordering Information

NSVT65011MW6T1G. Dual Matched General Purpose Transistor. NPN Matched Pair

ual Matched General Purpose Transistor NPN Matched Pair These transistors are housed in an ultrasmall SOT363 package ideally suited for portable products. They are assembled to create a pair of devices

Optocoupler, Phototransistor Output (Single, Dual, Quad Channel)

Optocoupler, Phototransistor Output (Single, Dual, Quad hannel) IL74/ILD74/ILQ74 Single hannel Dual hannel N 2 3 2 6 5 4 8 7 B E E FETURES IL74/ILD74/ILQ74 TTL compatible Transfer ratio, 35 % typical oupling

MUN5316DW1, NSBC143TPDXV6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN and PNP Transistors with Monolithic Bias Resistor Network

MUN3W, NSB3TPXV omplementary Bias Resistor Transistors R =.7 k, R2 = k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device

DCX(xxxx)U. Features. Mechanical Data. Ordering Information (Note 3 & 4) SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR.

DX(xxxx)U SMALL SIGNAL OMPLEMENTARY PRE-BIASED DUAL TRANSISTOR Features Epitaxial Planar Die onstruction Built-In Biasing Resistors Surface Mount Package Suited for Automated Assembly Totally Lead-Free

Distributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. MMT424 NPN SMLL SIGNL SURF MOUNT TRNSISTOR Features pitaxial Planar Die onstruction

MUN5214DW1, NSBC114YDXV6, NSBC114YDP6 Dual NPN Bias Resistor Transistors R1 = 10 k, R2 = 47 k

MUN524W, NSB4YXV6, NSB4YP6 ual NPN Bias Resistor Transistors R = 0 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single

K3N MMBT3906. Features. Mechanical Data. Ordering Information (Notes 4 & 5) Marking Information 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 MMBT3906

YM 40V PNP SMLL SIGNL TRNSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Ideal for Medium Power mplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free

DDC (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR

DD (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFAE MOUNT TRANSISTOR Features Epitaxial Planar Die onstruction omplementary PNP Types Available (DDA) Built-In Biasing Resistors Lead Free/RoHS ompliant

12 VOLTS, 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 45 m. MAXIMUM RATINGS (T A = 25 C) MARKING DIAGRAM

NSS16F8T1G 1, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high

General Purpose Transistors

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/ S 7 which is designed for low power surface mount applications.

MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6

MUN5333W, NSB43ZPXV6, NSB43ZPP6 omplementary Bias Resistor Transistors R = 4.7 k, R2 = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed

DCX4710H. General Description. Features. Mechanical Data. Maximum Ratings: Total Device. 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS

DX471H 1mA DUAL OMPLEMENTARY PRE-IASED TRANSISTORS General Description DX471H is est suited for applications where the load needs to e turned on and off using micro-controllers, comparators or other control

MUN5331DW1, NSBC123EPDXV6. Complementary Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k

MUN5W, NSBEPXV6 omplementary Bias Resistor Transistors R =. k, R =. k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device

NSS40500UW3T2G. 40 V, 6.0 A, Low V CE(sat) PNP Transistor. 40 VOLTS 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 65 m

4, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current

0.3W, PNP Plastic-Encapsulate Transistor

0.3W, PNP Plastic-Encapsulate Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 k, R2 = 47 k

MUN5335W, NSB3JPXV6, NSB3JPP6 omplementary Bias Resistor Transistors R =. k, R = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

Lead-free Green. 200 ma LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR General Description

Lead-free Green LMNB NEW PROUCT m LO SWITCH FETURING PRE-BISE PNP TRNSISTOR N N-MOSFET WITH PULL OWN RESISTOR General escription LMNB is best suited for applications where the load needs to be turned on

NSS35200CF8T1G. 35 V, 7 A, Low V CE(sat) PNP Transistor. 35 VOLTS 7.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 78 m

NSSF8T1G V, 7 A, Low V E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and

V DSS R DS(on) max (mω)

Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These

MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 k, R2 = 10 k

MUN53W, NSB4EPXV6, NSB4EPP6 omplementary Bias Resistor Transistors R = k, R2 = k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6. Complementary Bias Resistor Transistors R1 = 47 k, R2 = 47 k

MUN533W, NSB44EPXV6, NSB44EPP6 omplementary Bias Resistor Transistors R = 47 k, R2 = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to

MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k

MUN532W, NSB24EPXV6, NSB24EPP6 omplementary Bias Resistor Transistors R = 22 k, R2 = 22 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to

IRGBC30M Short Circuit Rated Fast IGBT

INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - µs @ 25, V GE = 5V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( to khz) See Fig. for urrent vs.

TO-92 SOT-23 Mark: 83. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

2N44 MMBT44 2N44 / MMBT44 B E TO-92 SOT-23 Mark: 83 B E This device is designed for use as general purpose amplifiers and switches requiring collector currents to 5 ma. Absolute Maximum Ratings* TA = 25

General Purpose Transistors

PNP Silicon hese transistors are designed for general purpose amplifier applications. hey are housed in the SO 323 which is designed for low power surface mount applications. Features Ideally suited for

TO-92 SOT-23 Mark: ZF. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

2N426 MMBT426 2N426 / MMBT426 B E TO-92 SOT-23 Mark: ZF B E This device is designed for general purpose amplifier and switching applications at collector currents to µa as a switch and to ma as an amplifier.

Excellent Integrated System Limited

Datasheet of -7 - TRNS PNP 3V 1 SOT-323 Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Diodes Incorporated -7 For any

NSS12100UW3TCG. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 400 m

NSSUWTG, A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current

300mW, NPN Small Signal Transistor

300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE

NSS20601CF8T1G 20 V, 8.0 A, Low V CE(sat) NPN Transistor

NSSF8TG V, 8. A, Low V E(sat) NPN Transistor ON Semiconductor's e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and

MCC BC558A/B/C. Features. PNP Silicon Amplifier Transistor 625mW

omponents 2736 Marilla Street Chatsworth!"# $%!"# BC556A/B/C BC557A/B/C A/B/C Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) 15 o C Junction Temperature

SOT563. Part Number Case Packaging DMC2400UV-7 SOT /Tape & Reel DMC2400UV-13 SOT /Tape & Reel

MC24UV COMPLEMENTRY PIR ENHNCEMENT MOE MOSFET Product Summary evice V (BR)SS R S(ON) max Q 2V Q2-2V I max T = 25 C.5Ω @ V = 4.5V 3m.9Ω @ V =.8V 74m.Ω @ V = -4.5V -7m 2.Ω @ V = -.8V -46m escription and

E n-channel. Parameter Min. Typ. Max. Units

INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - µs @ 25, Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency

G S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3

P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs

BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor

Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications

MB GHz TWO MODULUS PRESCALER

Sept. 1995 Edition 3.0b ATA SHEET MB510 2.7GHz TWO MOULUS PRESALER 2.7GHz TWO MOULUS PRESALER The Fujitsu MB510 is an ultra high speed, two modulus prescaler that forms a Phase Locked Loop (PLL) when combined

Part Number Case Packaging DMN2024U-7 SOT /Tape & Reel DMN2024U-13 SOT23 10,000/Tape & Reel

N-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits VNCE INFORMTION V (BR)SS 2V R S(ON) Max I Max T = +25 C 25mΩ @ V = 4.5V 6.8 29mΩ @ V = 2.5V 5.5 escription and pplications This MOSFET

G S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0.

P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -3V Surface Mount evice R S(ON) 75mΩ RoHS-compliant, Halogen-free G S I -3.7A SS escription Advanced Power MOSFETs

Features -4.1A. Part Number Case Packaging DMC3025LSD-13 SO-8 2,500/Tape & Reel

DM325LSD 3V OMPLEMENTRY ENHNEMENT MODE MOSFET DVNED INFORMTION Product Summary Device V (BR)DSS R DS(ON) max Package N-hannel 3V P-hannel -3V Description MX 2mΩ @ V GS = 1V 8.5 32mΩ @ V GS = 4.5V 7. SO-8

Advanced Power Electronics Corp.

AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -.A SS escription Advanced Power

FMB3906. pin #1. SuperSOT -6 Mark:.2A Dot denotes pin #1 T A. = 25 C unless otherwise noted. Symbol Parameter Value Units

S7-6 Mark:.2A FFB396 B2 E2 pin # 2 B E NOTE: The pinouts are symmetrical; pin and pin are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of

SMBJ Transient Voltage Suppressor Diode Series

*RoHS OMPLINT eatures RoHS compliant* Surface Mount SM package Standoff Voltage: 5. to 17 volts Power issipation: 6 watts pplications I 6-4-2 S (Min. Level 4) I 6-4-4 T I 6-4-5 Surge SMJ Transient Voltage

MJ16018 MJW kv SWITCHMODE Series SEMICONDUCTOR TECHNICAL DATA POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS

SEMIONDUTOR TEHNIL DT Order this document by MJ68/D. kv SWITHMODE Series These transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.

DATA SHEET. BCW31; BCW32; BCW33 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Jul 04

DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2000 Jul 04 2004 Feb 06 FETURES Low current (100 m) Low voltage (32 V). PPLICTIONS General purpose switching and amplification. PINNING PIN 1 base 2

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

PD -9586 INSULTED GTE BIPOLR TRNSISTOR IRG4P50UPbF UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT

Reflective Optical Sensor with PIN Photodiode Output

Reflective Optical Sensor with PIN Photodiode Output Description is a reflective sensor SMD in plastic package including IR emitter and PIN Photodiode. Optical axes of emitter and detector are parallel

SMCJ Transient Voltage Suppressor Diode Series

*RoHS OMPLINT eatures RoHS compliant* Surface Mount SM package Standoff Voltage: 5. to 17 volts Power issipation: 15 watts pplications I 6-4-2 S (Min. Level 4) I 6-4-4 T I 6-4-5 Surge SMJ Transient Voltage

ZXMS6004N8. Product Summary. Features and Benefits ADVANCE INFORMATION. Description. Mechanical Data. Applications. Ordering Information (Note 4)

AVANCE INFORMATION Clamping Product Summary 60V N-CHANNEL SELF PROTECTE ENHANCEMENT MOE INTELLIFET MOSFET Features and Benefits Continuous rain Source Voltage 60V On-State Resistance 500mΩ Nominal Load

G S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG

P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from

General Purpose Transistors

General Purpose ransistors PNP Silicon hese transistors are designed for general purpose amplifier applications. hey are housed in the SO 323/ S 7 which is designed for low power surface mount applications.

Obsolete Product(s) - Obsolete Product(s)

PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL

DATA SHEET. BCW71; BCW72 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 1997 Mar 06.

DISCRETE SEMICONDUCTORS DT SHEET ok, halfpage M3D088 Supersedes data of 1997 Mar 06 1999 pr 19 FETURES Low current (100 m) Low voltage (45 V) Low noise. PPLICTIONS General purpose switching and amplification.

FEATURES TO-220 FULLPAK TO-247AC. S N-Channel MOSFET. Top View

TN5N8SJ/TP5N8SJ/TP5N8FSJ N-Channel 8V (-S) Super Junction Power MOSFET PROUCT SUMMRY (V) at T J max. 8 R S(on) max. at 25 C (Ω) V GS = V.38 Q g max. (nc) 96 Q gs (nc) Q gd (nc) 2 Configuration Single FETURES

PACKAGE DIMENSIONS. .050" (1.27 mm).200" (5.08 mm) ±.010" .020" (0.51 mm) +.004" -.000".010" (0.25 mm) +.007" -.000" PIN " (7.62 mm) ±.

PKGE IMENSIONS.200" (5.08 mm).010" PIN #1." (2.54 mm).160" (4.06 mm) +.015" 0.300" (7.62 mm) ±.015".0" (1.27 mm).200" (5.08 mm) ±.010".020" (0.51 mm) +.004" -.000".010" (0.25 mm) +.007" -.000" PIN 8.010"

MBR5H100MFST3G NRVB5H100MFST3G. SWITCHMODE Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS

MBRHMFS, NRVBHMFS SWITHMODE Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides apability of Inspection and Probe

G S. Drain-Source Voltage 30 V Gate-Source Voltage ± 8 V at T = 70 C Continuous Drain Current 3. P D at T A =25 C Total Power Dissipation 1.

AP236AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate rive Lower On-resistance Surface-Mount evice R S(ON) 35mΩ RoHS-compliant, Halogen-free G S I 5A BV SS 3V escription Advanced Power

200mW, 4 PIN DIP Phototransistor Photocoupler

2mW, 4 PIN DIP Phototransistor Photocoupler FEATURES Current transfer ratio (CTR: MIN.8% at IF=5mA, VCE=5V) High isolation voltage between input and output (Viso=5V rms) High collector-emitter voltage

Optocoupler, Phototransistor Output, Dual Channel

Optocoupler, Phototransistor Output, Dual hannel Vishay Semiconductors i79073 DESRIPTION The is a two channel optocoupler for high density applications. Each channel consists of an optically coupled pair

Applications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000

YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

PD 9470F IRG4P50U INSULTED GTE BIPOLR TRNSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT

Optocoupler, Phototransistor Output, AC Input, Single/Quad Channel, Half Pitch Mini-Flat Package

TCMT6, TCMT46 Series Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, Single/Quad Channel, Half FEATURES Low profile package (half pitch) AC isolation test voltage 375 V RMS Low coupling

Green. Pin1. Top View Pin Configuration. Part Number Case Packaging DMTH3004LPS-13 POWERDI ,500/Tape & Reel

NEW PROUCT AVANCE INFORMATION Product Summary BV SS 3V R S(ON) Max 3.8mΩ @ V GS = V 6mΩ @ V GS = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOSFET is designed to minimize the on-state

G S. Drain-Source Voltage -16 V Gate-Source Voltage. ±8 V at T = 70 C Continuous Drain Current 3

AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -1V Surface Mount evice R S(ON) mω G RoHS-compliant, halogen-free I -A S SS escription Advanced Power MOSFETs

Features. Bottom View

YM AVANCE INFORMATION 3V N-CHANNEL ENHANCEMENT MOE MOSFET Product Summary V (BR)SS 3V escription R S(ON) max I max T A = +25 C 17mΩ @ V GS = 1V 8.4A 28mΩ @ V GS = 4.5V 6.8A This new generation MOSFET is

Power MOSFET IPAK (TO-251) T C = 25 C

Power MOSFET TLN60/TPN60/TUN60 PROUCT SUMMRY V S (V) 600 R S(on) (Ω) V GS = 0 V 7 Q g (Max.) (nc) 4 Q gs (nc) 2.7 Q gd (nc) 8. Configuration Single FETURES Halogen-free ccording to IEC 6249-2-2 efinition

Device Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000

KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO

Optocoupler, Photodarlington Output, With Internal RBE (Single, Dual, Quad Channel)

End of Life January-208 Optocoupler, Photodarlington Output, With Internal RBE (Single, Dual, Quad hannel) Single hannel Dual hannel N 2 3 2 3 6 5 4 8 7 6 B E E FETURES Internal RBE for high stability

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: C ob = 2.5 pf (typ.) High

G S. Drain-Source Voltage 30 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3

N-channel Enhancement-mode Power MOSFET Simple rive Requirement Low Gate Charge Surface Mount evice R S(ON) 2mΩ RoHS-compliant, halogen-free G S I.7A BV SS 3V escription Advanced Power MOSFETs from APEC

TO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E This device is designed for general

300mW, NPN Small Signal Transistor

300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE

MMBT2907A. SOT-23 Mark: 2F. SOT-6 Mark:.2B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

B E PN297A TO-92 MMPQ297 E B E B E B E B SOI-6 MMBT297A This device is designed for use as a general purpose amplifier and switch requiring collector currents to 5 ma. Sourced from Process 63. SOT-23 Mark:

NPN Silicon Planar High Voltage Transistor

NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21

MMBT2222A SMALL SIGNAL NPN TRANSISTOR

SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY

BC856-HF Thru. BC858-HF Series (PNP) RoHS Device Halogen Free

-HF Thru. -HF Series (PNP) RoHS Device Halogen Free Features - Ideally suited for automatic insertion - Power dissipation PCM:.25W (@T=25 C) - Low current.(max. 1m) - Collector-base voltage CBO: = -8 =

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

2N425 2N425 B E TO-92 This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol

MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS

MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed

Optocoupler, Photodarlington Output (Single, Dual, Quad Channel)

Single hannel FEATURES A 6 B 25 ma load current rating Fast rise time, 0 µs 2 5 Fast fall time, 35 µs N 3 4 E Single, dual and quad channel Dual hannel A A 2 3 4 8 7 6 5 E E Solid state reliability Standard

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

N G S N8 N8 N86 T-9 N-Channel RF mplifier This device is designed primarily for electronic switching applications such as low n Resistance analog switching. Sourced from Process. bsolute Maximum Ratings*

Taping code. Reel size (mm) 2SCR512P MPT T ,000 NB

2SCR52P NPN 2.0A 30 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 30 I C 2.0A Base Collector Emitter Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR52P