Continental Device India Limited

Size: px
Start display at page:

Download "Continental Device India Limited"

Transcription

1 n ISO/TS 16949, ISO 9001 and ISO Certified Company NPN SILICON POWER TRNSISTOR With Built - in Integrated Diode between Emitter & Collector BSOLUTE MXIMUM RTINGS DESCRIPTION Collector Base oltage Collector Emitter (sus) oltage Emitter Base oltage Collector Current Continuous Base Current Continuous Emitter Current Continuous Power T a =25 ºC Derate bove 25ºC Power T c =25 ºC Derate bove 25ºC Operating nd Storage Junction Temperature Range SYMBOL CBO CEO EBO I C I CM I B I BM I E I EM P D P D T j, T stg LUE UNIT W 11.2 mw/ ºC to+150 W mw/ ºC ºC THERML RESISTNCE Junction to Case Junction to mbient Maximum Lead Temperature for Soldering Purpose: 1/8" from Case for 5 Seconds R th (j-c) R th (j-a) (1) Pulse Test: Pulse Width=5ms, Duty Cycle=10% ELECTRICL CHRCTERISTICS (T a =25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MX UNIT Collector Base oltage CBO I C =1m, I E =0 700 Collector Emitter (sus) oltage * CEO(sus) I C =10m, I B =0 400 Collector Cut Off Current I CBO CB =680, I E =0 1.0 m CB =680, I E =0, T c =100ºC 5.0 m Emitter Cut Off Current I EBO EB =9, I C =0 1.0 m *Pulse Test: PW=300ms, Duty Cycle=2% ºC/W ºC/W T L 275 ºC Continental Device India Limited Data Sheet Page 1 of 5

2 n ISO/TS 16949, ISO 9001 and ISO Certified Company NPN SILICON POWER TRNSISTOR ELECTRICL CHRCTERISTICS (T a =25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MX UNIT DC Current Gain *h FE **I C =0.5, CE = I C =1, CE = Collector Emitter Saturation oltage * CE (sat) I C =0.5, I B = I C =1, I B = I C =1.5, I B = I C =1, I B =0.25,T c =100ºC 1.0 Base Emitter Saturation oltage * BE (sat) I C =0.5, I B = I C =1, I B = I C =1, I B =0.25,T c =100ºC 1.1 Integrated Diode Forward oltage FEC I F =1 2.0 DYNMIC CHRCTERISTICS DESCRIPTION SYMBOL TEST CONDITION MIN TYP MX UNIT Current Gain Bandwidth Product f T I C =100m, CE =10, f=1mhz 4.0 MHz Output Capacitance C ob CB =10, f=0.1mhz 21 pf SWITCHING TIME Turn On Time t on 1.1 µs Storage Time t CC =125, I C =1, stg I µs Fall Time t B1 =0.2, I B2 =0.2 r 0.7 µs ** h FE Classification:- Note:- Product is pre selected in DC current B C E F gain (Groups to F). CDIL reserves the right to ship any of the groups according to production availability. MRKING CD CD CD CD CD 13003D 13003DB 13003DC 13003DE 13003DF XY XY XY XY XY X = Year of Manufacturer Code Y = Month Code *Pulse Test:- PW=300ms, Duty Cycle=2% Continental Device India Limited Data Sheet Page 2 of 5

3 n ISO/TS 16949, ISO 9001 and ISO Certified Company Continental Device India Limited Data Sheet Page 3 of 5

4 n ISO/TS 16949, ISO 9001 and ISO Certified Company TO-126 (SOT-32) Continental Device India Limited Data Sheet Page 4 of 5

5 n ISO/TS 16949, ISO 9001 and ISO Certified Company Customer Notes Component Disposal Instructions 1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to please dispose as per prevailing Environmental Legislation of their Country. 2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical and Electronic Equipment (WEEE). Disclaimer The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and on the CDIL Web Site/CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDILwillnot be responsibleforany damages resultingfromsuch sale(s). CDIL strives for continuous improvement and reserves the right to change the specificationsof its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial rea, New Delhi , India. Telephone , Fax , @cdil.com Continental Device India Limited Data Sheet Page 5 of 5

Continental Device India Limited

Continental Device India Limited Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS E C B High Current Transistor ABSOLUTE MAXIMUM RATINGS (T a =25ºC) DESCRIPTION

More information

Continental Device India Limited

Continental Device India Limited Continental Device India Limited n ISO/TS6949 and ISO 9 Certified Company NPN SILICON PLNR POWER TRNSISTOR 2N3773 Complementary 2N669 General Purpose mplifier specially suited for Power Conditioning pplications

More information

Continental Device India Limited

Continental Device India Limited Continental evice India Limited n ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLNR EPITXIL TRNSISTORS C B E BSOLUTE MXIMUM RTINGS (T a =25ºC) ESCRIPTION SYMBOL BC413 BC414 UNITS

More information

CDIL BC107/108/109 Transistor

CDIL BC107/108/109 Transistor ELECTRON DATA SHEET CDIL BC107/108/109 Transistor Order Code Manufacturers Part No Description 550-001 BC107B Low noise general purpose amplifier 550-029 BC108 Low noise general purpose amplifier 550-002

More information

Continental Device India Limited

Continental Device India Limited Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS 2N3903 / 2N3904 For Lead Free Parts, Device Part # will be

More information

Continental Device India Limited

Continental Device India Limited Continental evice India Limited n ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLNR EPITXIL TRNSISTORS C B E BC549,.B,C Low Noise Transistors BSOLUTE MXIMUM RTINGS (T a =25ºC) ESCRIPTION

More information

n/a BFY50 TRAN NPN 35V 1A TO39 RC n/a BFY51 TRAN NPN 30V 1A TO39 RC n/a BFY52 TRAN NPN 20V 1A TO39 RC

n/a BFY50 TRAN NPN 35V 1A TO39 RC n/a BFY51 TRAN NPN 30V 1A TO39 RC n/a BFY52 TRAN NPN 20V 1A TO39 RC DATA SHEET Transistors Order code Manufacturer code Description 81-0120 n/a BFY50 TRAN NPN 35V 1A TO39 RC 81-0122 n/a BFY51 TRAN NPN 30V 1A TO39 RC 81-0124 n/a BFY52 TRAN NPN 20V 1A TO39 RC Transistors

More information

Sales: Technical: Fax:

Sales: Technical: Fax: DATA SHEET Transistors Order code Manufacturer code Description 81-0010 n/a BC107 NPN GENERAL PURPOSE TRANSISTOR RC 81-0012 n/a BC107B TO18 50V NPN GP TRANSISTOR (RC) 81-0014 n/a BC108 NPN GP TRANSISTOR

More information

Continental Device India Limited

Continental Device India Limited ontinental evice India Limited n ISO/TS 16949, ISO 9001 and ISO 14001 ertified ompany PNP SILION PLNR EPITXIL TRNSISTORS 556,,, 557,,, 558,,, E mplifier Transistors SOLUTE MXIMUM RTINGS (T a =25º) ESRIPTION

More information

SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC636 BC637 BC638 BC639 BC640 NPN PNP

SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC636 BC637 BC638 BC639 BC640 NPN PNP Continental Device India imited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 ic# QSC/-000019.3 SIICON PANAR EPITAXIA TRANSISTORS BC635 BC636 E C B Driver Stages of Audio Amplifiers Applications

More information

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009 KSE3008/3009 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3008/3009 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum

More information

NPN Silicon Planar High Voltage Transistor

NPN Silicon Planar High Voltage Transistor NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21

More information

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω KSE3006/3007 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3006/3007 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum

More information

NPN Silicon Planar High Voltage Transistor

NPN Silicon Planar High Voltage Transistor NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21

More information

Darlington Transistors

Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126

More information

300mW, NPN Small Signal Transistor

300mW, NPN Small Signal Transistor 300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE

More information

K3N MMBT3906. Features. Mechanical Data. Ordering Information (Notes 4 & 5) Marking Information 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 MMBT3906

K3N MMBT3906. Features. Mechanical Data. Ordering Information (Notes 4 & 5) Marking Information 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 MMBT3906 YM 40V PNP SMLL SIGNL TRNSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Ideal for Medium Power mplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free

More information

MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS

MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT491A NPN BISS transistor. Product specification Supersedes data of 2001 Jun 11.

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT491A NPN BISS transistor. Product specification Supersedes data of 2001 Jun 11. DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 200 Jun 2004 Jan 3 FETURES High current (max. ) Low collector-emitter saturation voltage ensures reduced power consumption. PPLICTIONS Battery powered

More information

TIP120, 121, 122, 125, 126, 127

TIP120, 121, 122, 125, 126, 127 Features: Collector - emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126 100 V (minimum) - TIP122, TIP127 Collector - emitter saturation voltage

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC26 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm Low saturation voltage: V CE (sat) =. V (max)

More information

BDW94/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C

BDW94/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C Power Linear and Switching Applications Power Darlington TR Complement to BDW93, BDW93A, BDW93B and BDW93C respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum

More information

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications MJD34, NJMJD34T4G (NPN), MJD3, NJMJD3T4G (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching

More information

DATA SHEET. PBSS4240T 40 V; 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul 13

DATA SHEET. PBSS4240T 40 V; 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul 13 DISCRETE SEMICONDUCTORS DT SHEET PBSS4240T 40 V; 2 NPN low V CEsat (BISS) transistor Supersedes data of 2001 Jul 13 2004 Jan 09 FETURES Low collector-emitter saturation voltage High current capability

More information

Darlington Transistors

Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications Collector-Emitter sustaining voltage V CEO (sus) = 60 V (Minimum) - TIP45 = 80 V (Minimum) - TIP4, TIP46 = 00 V (Minimum)

More information

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage Low Saturation Voltage High Speed : V CBO = 2000 V : V CE (sat)

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering

More information

Excellent Integrated System Limited

Excellent Integrated System Limited Datasheet of -7 - TRNS PNP 3V 1 SOT-323 Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Diodes Incorporated -7 For any

More information

DATA SHEET. BCW31; BCW32; BCW33 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Jul 04

DATA SHEET. BCW31; BCW32; BCW33 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Jul 04 DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2000 Jul 04 2004 Feb 06 FETURES Low current (100 m) Low voltage (32 V). PPLICTIONS General purpose switching and amplification. PINNING PIN 1 base 2

More information

BDW93C, BDW94C Series

BDW93C, BDW94C Series Features Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage- CEO (sus) = (Minimum) Collector-emitter saturation voltage- CE (sat) = 2 (Maximum)

More information

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features Medium Power Linear Switching Applications Complementary to TIP125 / TIP126 / TIP127 Ordering Information 1 TO-220 1.Base 2.Collector

More information

Taping code. Reel size (mm) 2SCR512P MPT T ,000 NB

Taping code. Reel size (mm) 2SCR512P MPT T ,000 NB 2SCR52P NPN 2.0A 30 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 30 I C 2.0A Base Collector Emitter Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR52P

More information

2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C)

2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: VCE (sat) =. V (max) (IC = A) High-speed switching

More information

FJP13007 High Voltage Fast-Switching NPN Power Transistor

FJP13007 High Voltage Fast-Switching NPN Power Transistor FJP3007 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching

More information

0.3W, PNP Plastic-Encapsulate Transistor

0.3W, PNP Plastic-Encapsulate Transistor 0.3W, PNP Plastic-Encapsulate Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to

More information

300mW, NPN Small Signal Transistor

300mW, NPN Small Signal Transistor 300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE

More information

DATA SHEET. BCW71; BCW72 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 1997 Mar 06.

DATA SHEET. BCW71; BCW72 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 1997 Mar 06. DISCRETE SEMICONDUCTORS DT SHEET ok, halfpage M3D088 Supersedes data of 1997 Mar 06 1999 pr 19 FETURES Low current (100 m) Low voltage (45 V) Low noise. PPLICTIONS General purpose switching and amplification.

More information

Taping code. Reel size (mm) 2SC5824 MPT T ,000 UP

Taping code. Reel size (mm) 2SC5824 MPT T ,000 UP NPN 3.0A 60 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 60 I C 3A Base Collector Emitter Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low CE(sat)

More information

查询 D2553 供应商 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553. DC I C 8 A Pulse I CP 16

查询 D2553 供应商 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553. DC I C 8 A Pulse I CP 16 查询 D2553 供应商 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm High

More information

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector

More information

BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor

BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications

More information

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Optocoupler, Phototransistor Output, FEATURES 2842 DESCRIPTION i79004-5 Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS

More information

NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS

NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: V EBO = 25 V (min) High reverse h FE : Reverse h FE = 150 (typ.)

More information

2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C) TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm High DC current gain: hfe = 4 to (IC =.5 A) Low collector-emitter

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D088. PBSS5120T 20 V, 1 A PNP low V CEsat (BISS) transistor. Product specification 2003 Sep 29

DISCRETE SEMICONDUCTORS DATA SHEET M3D088. PBSS5120T 20 V, 1 A PNP low V CEsat (BISS) transistor. Product specification 2003 Sep 29 DISCRETE SEMICONDUCTORS DT SHEET M3D088 2003 Sep 29 FETURES Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High efficiency leading to less heat generation

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3328. JEITA Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3328. JEITA Storage temperature range T stg 55 to 150 C TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC28 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: V CE (sat) =.5 V (max) (I C = A) High-speed

More information

DATA SHEET. PMBT5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.

DATA SHEET. PMBT5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15. DISCRETE SEMICONDUCTORS DT SHEET k, halfpage M3D088 Supersedes data of 1999 pr 15 2004 Jan 21 FETURES Low current (max. 300 m) High voltage (max. 150 V). PPLICTIONS Switching and amplification in high

More information

TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS

TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general purpose switching and amplifier applications. Features DC Current ain h FE = 20 70 @ I C =.0 dc Collector Emitter

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS NJTN, NJVNTG, NJVNTG Bipolar Power Transistors NPN Silicon Features Epoxy Meets UL 9, V @.5 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ

More information

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC 2SCR53P NPN.0A 50 Middle Power Transistor Datasheet Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR53P 3) Low CE(sat) CE(sat) =0.35(Max.) (I C /I B =500mA/25mA) 4) Lead Free/RoHS

More information

MUN52xxDWT DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Marking R(K) R2(K) Shipping MUN52DWT SOT-363 7A /Tape&Reel MUN522DW

MUN52xxDWT DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Marking R(K) R2(K) Shipping MUN52DWT SOT-363 7A /Tape&Reel MUN522DW MUN52xxDWT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors;

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT2369 NPN switching transistor. Product specification Supersedes data of 1999 Apr 27.

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT2369 NPN switching transistor. Product specification Supersedes data of 1999 Apr 27. DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 1999 pr 27 2004 Jan 22 FETURES Low current (max. 200 m) Low voltage (max. 15 V). PPLICTIONS High-speed switching, especially in portable equipment. PINNING

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225. JEITA Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225. JEITA Storage temperature range T stg 55 to 150 C 2SC22 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC22 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm High DC current gain: h FE = (min) (I C = 4 ma) Low collector-emitter

More information

FJPF13009 NPN Silicon Transistor

FJPF13009 NPN Silicon Transistor FJPF3009 NPN Silicon Transistor High oltage Switch Mode Application High oltage Capability High Switching Speed Suitable for Motor Control and Switching Mode Power Supply December 2007 FJPF3009 NPN Silicon

More information

KSC2383 NPN Epitaxial Silicon Transistor

KSC2383 NPN Epitaxial Silicon Transistor KSC2383 NPN Epitaxial Silicon Transistor TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383 Y- TO-92

More information

KSA1220/1220A. Symbol Parameter Ratings Units V CBO Collector-Base Voltage : KSA1220 : KSA1220A V CEO Collector-Emitter Voltage : KSA1220 : KSA1220A

KSA1220/1220A. Symbol Parameter Ratings Units V CBO Collector-Base Voltage : KSA1220 : KSA1220A V CEO Collector-Emitter Voltage : KSA1220 : KSA1220A Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A TO-26. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C unless

More information

MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k

MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Digital Transistors (BRT) R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) SC Audio Frequency Amplifier Applications Unit: mm Complementary to SA6 Small collector output capacitance: C ob =.8 pf (typ.) High transition

More information

DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30

DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30 DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistor Supersedes data of 2001 Aug 30 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package

More information

KSH122 / KSH122I NPN Silicon Darlington Transistor

KSH122 / KSH122I NPN Silicon Darlington Transistor KSH22 / KSH22I NPN Silicon Darlington Transistor Features D-PAK for Surface Mount Applications High DC Current Gain Built-in Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight

More information

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS.  THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc

More information

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive

More information

MUN5311DW1T1G Series.

MUN5311DW1T1G Series. MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single

More information

HN1B01F HN1B01F. Audio-Frequency General-Purpose Amplifier Applications Q1: Q2: Marking. Q1 Absolute Maximum Ratings (Ta = 25 C)

HN1B01F HN1B01F. Audio-Frequency General-Purpose Amplifier Applications Q1: Q2: Marking. Q1 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50

More information

MJ15003, MJ A Complementary Power Transistors

MJ15003, MJ A Complementary Power Transistors The MJ15003 and MJ15004 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators and other linear applications. Features: High Power

More information

NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter

More information

MJ15022 / MJ15024 Power Transistors

MJ15022 / MJ15024 Power Transistors The and MJ15024 are silicon power base power transistors designed for high power audio, disk head positioners and other linear applications. Features: High Safe Operating Area. High DC Current Gain h FE

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection 4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5000 V RMS Interfaces with common logic families C 2 5 C Input-output coupling capacitance < pf NC 3 4

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1428. JEITA Junction temperature T j 150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1428. JEITA Junction temperature T j 150 C TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1428 Power Amplifier Applications Power Switching Applications Unit: mm Low collector-emitter saturation voltage: V CE (sat) =.5 V (max) (I

More information

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C TOSHIBA Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications Unit: mm High power dissipation: P C = W () Good h FE linearity Absolute Maximum Ratings () Characteristics Symbol Rating

More information

DATA SHEET. PEMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Sep 25

DATA SHEET. PEMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Sep 25 DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistors Supersedes data of 2001 Sep 25 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 1.2 mm ultra thin package

More information

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth

More information

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142 ... designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min h FE = 1000 @ I C = 5 A, V CE = 4 V Collector Emitter Sustaining Voltage @ 30 ma V CEO(sus)

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BF840 NPN medium frequency transistor. Product specification Supersedes data of 1999 Apr 12.

DISCRETE SEMICONDUCTORS DATA SHEET. BF840 NPN medium frequency transistor. Product specification Supersedes data of 1999 Apr 12. DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 1999 pr 12 2004 Jan 13 FETURES Low current (max. 25 m) Low voltage (max. 40 V). PPLICTIONS M mixers IF amplifiers in M/FM receivers. PINNING PIN 1 base

More information

Applications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000

Applications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000 YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R

More information

MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS MJE24G (NPN), MJE25G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter

More information

MMBT2222A SMALL SIGNAL NPN TRANSISTOR

MMBT2222A SMALL SIGNAL NPN TRANSISTOR SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY

More information

DATA SHEET. BC847BPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 26.

DATA SHEET. BC847BPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 26. DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 NPN/PNP general purpose transistor Supersedes data of 1999 Apr 26 2001 Oct 26 FEATURES Low collector capacitance Low collector-emitter saturation

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type TPC

TOSHIBA Transistor Silicon PNP Epitaxial Type TPC TOSHIBA Transistor Silicon PNP Epitaxial Type TPC662 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm High DC current gain: h FE = 2 to 5 (I C =.2 A) Low collector-emitter

More information

UNA0216 (UN216) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Small Signal Transistor Arrays

UNA0216 (UN216) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Small Signal Transistor Arrays Small Signal Transistor Arrays UNA26 (UN26) This product complies with the RoHS Directive (EU 22/95/EC). Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: C ob = 2.5 pf (typ.) High

More information

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The HGX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor

More information

KSA1156. Symbol Parameter Test Condition Min. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage I C = - 100mA, I B = - 10mA

KSA1156. Symbol Parameter Test Condition Min. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage I C = - 100mA, I B = - 10mA High Voltage Switching Low Power Switching Regulator DC-DC Converter High Breakdown Voltage Low Collector Saturation Voltage High Speed Switching 1 TO-126 1. Emitter 2.Collector 3.Base PNP Silicon Transistor

More information

DATA SHEET. 2PC945 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

DATA SHEET. 2PC945 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28. DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 08 FEATURES Low current (max. 100 ma) Low voltage (max. 50 V). APPLICATIONS General purpose switching

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW. PBSS3540M 40 V, 0.5 A PNP low V CEsat (BISS) transistor. Product specification 2003 Aug 12

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW. PBSS3540M 40 V, 0.5 A PNP low V CEsat (BISS) transistor. Product specification 2003 Aug 12 DISCRETE SEMICONDUCTORS DATA SHEET BOTTOM VIEW M3D883 23 Aug 12 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High efficiency leading to reduced

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22

More information

HN1B04FU HN1B04FU. Audio Frequency General Purpose Amplifier Applications. Marking. Q1 Absolute Maximum Ratings (Ta = 25 C)

HN1B04FU HN1B04FU. Audio Frequency General Purpose Amplifier Applications. Marking. Q1 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Audio Frequency General Purpose Amplifier Applications Unit: mm Q1: High voltage and high current

More information

TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth

More information

2SB1275 V CEO -160V I C -1.5A. Datasheet. PNP -1.5A -160V Middle Power Transistor. Outline Parameter Value CPT3. Features

2SB1275 V CEO -160V I C -1.5A. Datasheet. PNP -1.5A -160V Middle Power Transistor. Outline Parameter Value CPT3. Features PNP -1.5A -160V Middle Power Transistor Datasheet Outline Parameter Value CPT3 Collector Features V CEO -160V I C -1.5A 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High

More information

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.

More information

TIP120, 121, 122, 125, 126, 127 Darlington Transistors

TIP120, 121, 122, 125, 126, 127 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. Collector-Emitter sustaining voltage-v CEO(sus) = 60V (Minimum) - TIP120, TIP125 80V (Minimum) - TIP121, TIP126 100V

More information

FJA4310. Symbol Parameter Value Units

FJA4310. Symbol Parameter Value Units FJA43 FJA43 Audio Power Amplifier High Current Capability : =A High Power Dissipation Wide S.O.A Complement to FJA42 TO-3P.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

More information