Continental Device India Limited

Size: px
Start display at page:

Download "Continental Device India Limited"

Transcription

1 Continental evice India Limited n ISO/TS 16949, ISO 9001 and ISO Certified Company NPN SILICON PLNR EPITXIL TRNSISTORS C B E BSOLUTE MXIMUM RTINGS (T a =25ºC) ESCRIPTION SYMBOL BC413 BC414 UNITS Collector Emitter oltage CEO Collector Base oltage CBO Emitter Base oltage EBO 5.0 Collector Current Continuous I C 100 m Power issipation at T a =25ºC P 350 mw erate bove 25ºC 2.8 mw/ºc Power issipation at T c =25ºC P 1.0 W erate bove 25ºC Operating and Storage Junction Temperature Range mw/ºc T J, T stg - 55 to +150 ºC THERML RESISTNCE Junction to Case R th (j-c) 125 ºC/W Junction to mbient in free air R th (j-a) 357 ºC/W ELECTRICL CHRCTERISTICS (T a =25ºC unless specified otherwise) ESCRIPTION SYMBOL TEST CONITION BC413 BC414 UNITS Collector Emitter oltage CEO I C =1m, I B =0 >30 >45 Collector Base oltage CBO I C =10µ, I E =0 >45 >50 Emitter Base oltage EBO I E =10µ, I C =0 >5.0 Collector Cut Off Current I CBO CB =30, I E =0 <15 n CB =30, I E =0, T a = +125ºC <5.0 µ Emitter Cut Off oltage I EBO EB =4, I C =0, <15 n C Current Gain h FE I C =10µ, CE =5, BC413/414 >100 I C =2m, CE =5 BC413B/414C BC413C/414C BC413/ Collector Emitter Saturation oltage CE (sat) I C =10m, I B =0.5m <0.25 I C =10m, I B =see * <0.6 **I C =100m, I B =5m <0.6 Base Emitter Saturation oltage BE (sat) **I C =100m, I B =5m TYP1.1 Base Emitter On oltage BE (on) I C =10µ, CE =5 TYP0.52 I C =100µ, CE =5 TYP0.55 I C =2m, CE = *I B is alue for Which I C =11m at CE =1 **Pulse test:- Pulse Width =300ms, uty Cycle 2% 8.0 Continental evice India Limited ata Sheet Page 1 of 5

2 NPN SILICON PLNR EPITXIL TRNSISTORS C B E ELECTRICL CHRCTERISTICS (T a =25ºC unless specified otherwise) SMLL SIGNL CHRCTERISTICS ESCRIPTION SYMBOL TEST CONITION MIN TYP MX UNITS Transistors Frequency f T I C =10m, CE =5, f=100mhz 250 MHz Collector Base Capacitance C cbo CE =10, f=1mhz 2.5 pf Noise Figure N F I C =200µ, CE =5,R S =2KΩ, f=30h Z -15kH Z 4.0 db Continental evice India Limited ata Sheet Page 2 of 5

3 Solderability Ensured imension With 'L' L Beyond 'L' Uncontrolled B K SEC E IM B C E MIN MX F 5 EG G H K L M ll dimensions are in mm G F F M H C Mold Parting Line PIN CONFIGURTION 1. EMITTER 2. BSE 3. COLLECTOR The Package, Tape and mmo Pack drawings are correct as on the date of issue/revision of this ata Sheet. The currently valild dimensions and information, may please be confirmed from the rawing in the Packages and Packing Section of the Product Catalogue. Packing etails PCKGE STNR PCK INNER CRTON BOX OUTER CRTON BOX etails Net Weight/Qty Size Qty Size Qty Bulk T& 1K/polybag 2K/ammo box 200 gm/1k pcs 645 gm/2k pcs 3" x 7.5" x 7.5" 12.5" x 8" x 1.8" 5K 2K 17" x 15" x 13.5" 17" x 15" x 13.5" 80K 32K Gr Wt 23 kgs 12.5 kgs Continental evice India Limited ata Sheet Page 3 of 5

4 Component isposal Instructions 1. CIL Semiconductor evices are RoHS compliant, customers are requested to please dispose as per prevailing Environmental Legislation of their Country. 2. In Europe, please dispose as per EU irective 2002/96/EC on Waste Electrical and Electronic Equipment (WEEE). Continental evice India Limited ata Sheet Page 4 of 5

5 Customer Notes isclaimer The product information and the selection guides facilitate selection of the CIL's Semiconductor evice(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our ata Sheet(s) so as to confirm that the evice(s) meet functionality parameters for your application. The information furnished in the ata Sheet and on the CIL Web Site/C are believed to be accurate and reliable. CIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CIL does not assume liability whatsoever, arising out of the application or use of any CIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CIL customers selling these products (either as individual Semiconductor evices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CIL will not be responsible for any damages resulting from such sale(s). CIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CIL is a registered Trademark of Continental evice India Limited C-120 Naraina Industrial rea, New elhi , India. Telephone , Fax , @cdil.com Continental evice India Limited ata Sheet Page 5 of 5

Continental Device India Limited

Continental Device India Limited Continental evice India Limited n ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLNR EPITXIL TRNSISTORS C B E BC549,.B,C Low Noise Transistors BSOLUTE MXIMUM RTINGS (T a =25ºC) ESCRIPTION

More information

Continental Device India Limited

Continental Device India Limited ontinental evice India Limited n ISO/TS 16949, ISO 9001 and ISO 14001 ertified ompany PNP SILION PLNR EPITXIL TRNSISTORS 556,,, 557,,, 558,,, E mplifier Transistors SOLUTE MXIMUM RTINGS (T a =25º) ESRIPTION

More information

Continental Device India Limited

Continental Device India Limited n ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRNSISTOR With Built - in Integrated Diode between Emitter & Collector BSOLUTE MXIMUM RTINGS DESCRIPTION Collector Base oltage

More information

CDIL BC107/108/109 Transistor

CDIL BC107/108/109 Transistor ELECTRON DATA SHEET CDIL BC107/108/109 Transistor Order Code Manufacturers Part No Description 550-001 BC107B Low noise general purpose amplifier 550-029 BC108 Low noise general purpose amplifier 550-002

More information

Continental Device India Limited

Continental Device India Limited Continental Device India Limited n ISO/TS6949 and ISO 9 Certified Company NPN SILICON PLNR POWER TRNSISTOR 2N3773 Complementary 2N669 General Purpose mplifier specially suited for Power Conditioning pplications

More information

Continental Device India Limited

Continental Device India Limited Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS E C B High Current Transistor ABSOLUTE MAXIMUM RATINGS (T a =25ºC) DESCRIPTION

More information

Continental Device India Limited

Continental Device India Limited Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS 2N3903 / 2N3904 For Lead Free Parts, Device Part # will be

More information

Sales: Technical: Fax:

Sales: Technical: Fax: DATA SHEET Transistors Order code Manufacturer code Description 81-0010 n/a BC107 NPN GENERAL PURPOSE TRANSISTOR RC 81-0012 n/a BC107B TO18 50V NPN GP TRANSISTOR (RC) 81-0014 n/a BC108 NPN GP TRANSISTOR

More information

n/a BFY50 TRAN NPN 35V 1A TO39 RC n/a BFY51 TRAN NPN 30V 1A TO39 RC n/a BFY52 TRAN NPN 20V 1A TO39 RC

n/a BFY50 TRAN NPN 35V 1A TO39 RC n/a BFY51 TRAN NPN 30V 1A TO39 RC n/a BFY52 TRAN NPN 20V 1A TO39 RC DATA SHEET Transistors Order code Manufacturer code Description 81-0120 n/a BFY50 TRAN NPN 35V 1A TO39 RC 81-0122 n/a BFY51 TRAN NPN 30V 1A TO39 RC 81-0124 n/a BFY52 TRAN NPN 20V 1A TO39 RC Transistors

More information

SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC636 BC637 BC638 BC639 BC640 NPN PNP

SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC636 BC637 BC638 BC639 BC640 NPN PNP Continental Device India imited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 ic# QSC/-000019.3 SIICON PANAR EPITAXIA TRANSISTORS BC635 BC636 E C B Driver Stages of Audio Amplifiers Applications

More information

300mW, NPN Small Signal Transistor

300mW, NPN Small Signal Transistor 300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE

More information

NPN Silicon Planar High Voltage Transistor

NPN Silicon Planar High Voltage Transistor NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21

More information

DATA SHEET. BCW31; BCW32; BCW33 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Jul 04

DATA SHEET. BCW31; BCW32; BCW33 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Jul 04 DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2000 Jul 04 2004 Feb 06 FETURES Low current (100 m) Low voltage (32 V). PPLICTIONS General purpose switching and amplification. PINNING PIN 1 base 2

More information

Lead-free Green. 200 ma LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR General Description

Lead-free Green. 200 ma LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR General Description Lead-free Green LMNB NEW PROUCT m LO SWITCH FETURING PRE-BISE PNP TRNSISTOR N N-MOSFET WITH PULL OWN RESISTOR General escription LMNB is best suited for applications where the load needs to be turned on

More information

NPN Silicon Planar High Voltage Transistor

NPN Silicon Planar High Voltage Transistor NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21

More information

Excellent Integrated System Limited

Excellent Integrated System Limited Datasheet of -7 - TRNS PNP 3V 1 SOT-323 Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Diodes Incorporated -7 For any

More information

K3N MMBT3906. Features. Mechanical Data. Ordering Information (Notes 4 & 5) Marking Information 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 MMBT3906

K3N MMBT3906. Features. Mechanical Data. Ordering Information (Notes 4 & 5) Marking Information 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 MMBT3906 YM 40V PNP SMLL SIGNL TRNSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Ideal for Medium Power mplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free

More information

DATA SHEET. PMBT5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.

DATA SHEET. PMBT5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15. DISCRETE SEMICONDUCTORS DT SHEET k, halfpage M3D088 Supersedes data of 1999 pr 15 2004 Jan 21 FETURES Low current (max. 300 m) High voltage (max. 150 V). PPLICTIONS Switching and amplification in high

More information

DATA SHEET. BCW71; BCW72 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 1997 Mar 06.

DATA SHEET. BCW71; BCW72 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 1997 Mar 06. DISCRETE SEMICONDUCTORS DT SHEET ok, halfpage M3D088 Supersedes data of 1997 Mar 06 1999 pr 19 FETURES Low current (100 m) Low voltage (45 V) Low noise. PPLICTIONS General purpose switching and amplification.

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT491A NPN BISS transistor. Product specification Supersedes data of 2001 Jun 11.

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT491A NPN BISS transistor. Product specification Supersedes data of 2001 Jun 11. DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 200 Jun 2004 Jan 3 FETURES High current (max. ) Low collector-emitter saturation voltage ensures reduced power consumption. PPLICTIONS Battery powered

More information

DATA SHEET. PBSS4240T 40 V; 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul 13

DATA SHEET. PBSS4240T 40 V; 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul 13 DISCRETE SEMICONDUCTORS DT SHEET PBSS4240T 40 V; 2 NPN low V CEsat (BISS) transistor Supersedes data of 2001 Jul 13 2004 Jan 09 FETURES Low collector-emitter saturation voltage High current capability

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL

More information

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω KSE3006/3007 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3006/3007 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum

More information

0.3W, PNP Plastic-Encapsulate Transistor

0.3W, PNP Plastic-Encapsulate Transistor 0.3W, PNP Plastic-Encapsulate Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering

More information

Part Ordering code Marking Remarks Package BFR90A BFR90AGELB-GS08 BFR90A Packed in Bulk TO-50(3)

Part Ordering code Marking Remarks Package BFR90A BFR90AGELB-GS08 BFR90A Packed in Bulk TO-50(3) Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1

More information

BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor

BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications

More information

DATA SHEET. PEMD12; PUMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kω,r2=47kω DISCRETE SEMICONDUCTORS

DATA SHEET. PEMD12; PUMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kω,r2=47kω DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DT SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω,r2=47kω Supersedes data of 2001 Nov 7 2003 Oct 08 FETURES Built-in bias resistors Simplified circuit design Reduction

More information

DATA SHEET. PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 kω,r2=22kω DISCRETE SEMICONDUCTORS

DATA SHEET. PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 kω,r2=22kω DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DT SHEET NPN/PNP resistor-equipped transistors; R1 = 22 kω,r2=22kω Supersedes data of 2003 Jun 06 2004 pr 21 FETURES Built-in bias resistors Simplifies circuit design Reduces component

More information

BC856-HF Thru. BC858-HF Series (PNP) RoHS Device Halogen Free

BC856-HF Thru. BC858-HF Series (PNP) RoHS Device Halogen Free -HF Thru. -HF Series (PNP) RoHS Device Halogen Free Features - Ideally suited for automatic insertion - Power dissipation PCM:.25W (@T=25 C) - Low current.(max. 1m) - Collector-base voltage CBO: = -8 =

More information

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single

More information

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009 KSE3008/3009 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3008/3009 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum

More information

DATA SHEET. PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kω,r2=47kω DISCRETE SEMICONDUCTORS

DATA SHEET. PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kω,r2=47kω DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DT SHEET NPN/NPN resistor-equipped transistors; R1 = 10 kω,r2=47kω Supersedes data of 2003 Sep 15 2004 pr 14 FETURES Built-in bias resistors Simplifies circuit design Reduces component

More information

MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS

MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D088. PBSS5120T 20 V, 1 A PNP low V CEsat (BISS) transistor. Product specification 2003 Sep 29

DISCRETE SEMICONDUCTORS DATA SHEET M3D088. PBSS5120T 20 V, 1 A PNP low V CEsat (BISS) transistor. Product specification 2003 Sep 29 DISCRETE SEMICONDUCTORS DT SHEET M3D088 2003 Sep 29 FETURES Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High efficiency leading to less heat generation

More information

MCC BC558A/B/C. Features. PNP Silicon Amplifier Transistor 625mW

MCC BC558A/B/C.   Features. PNP Silicon Amplifier Transistor 625mW omponents 2736 Marilla Street Chatsworth!"# $%!"# BC556A/B/C BC557A/B/C A/B/C Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) 15 o C Junction Temperature

More information

Maintenance/ Discontinued

Maintenance/ Discontinued This product complies with the RoHS Directive (EU 22/95/EC). Transistors Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531 Features Low noise voltage NV

More information

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features Medium Power Linear Switching Applications Complementary to TIP125 / TIP126 / TIP127 Ordering Information 1 TO-220 1.Base 2.Collector

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BF840 NPN medium frequency transistor. Product specification Supersedes data of 1999 Apr 12.

DISCRETE SEMICONDUCTORS DATA SHEET. BF840 NPN medium frequency transistor. Product specification Supersedes data of 1999 Apr 12. DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 1999 pr 12 2004 Jan 13 FETURES Low current (max. 25 m) Low voltage (max. 40 V). PPLICTIONS M mixers IF amplifiers in M/FM receivers. PINNING PIN 1 base

More information

Taping code. Reel size (mm) 2SCR512P MPT T ,000 NB

Taping code. Reel size (mm) 2SCR512P MPT T ,000 NB 2SCR52P NPN 2.0A 30 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 30 I C 2.0A Base Collector Emitter Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR52P

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT2369 NPN switching transistor. Product specification Supersedes data of 1999 Apr 27.

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT2369 NPN switching transistor. Product specification Supersedes data of 1999 Apr 27. DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 1999 pr 27 2004 Jan 22 FETURES Low current (max. 200 m) Low voltage (max. 15 V). PPLICTIONS High-speed switching, especially in portable equipment. PINNING

More information

MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k

MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Digital Transistors (BRT) R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor Not for new design, this product will be obsoleted soon BFQ81 Silicon NPN Planar RF Transistor Features Small feedback capacitance Low noise figure Low cross modulation Lead (Pb)-free component e3 2 1

More information

Darlington Transistors

Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126

More information

Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Feature: UL recognized (File # E338132) Creepage distance > 7.62mm

Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Feature: UL recognized (File # E338132) Creepage distance > 7.62mm Feature: Certification & Compliance: High Isolation voltage between input and output Pb free and RoHS Compliant (Viso = 5000V rms) UL recognized (File # E338132) Creepage distance > 7.62mm VDE recognized

More information

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage Low Saturation Voltage High Speed : V CBO = 2000 V : V CE (sat)

More information

300mW, NPN Small Signal Transistor

300mW, NPN Small Signal Transistor 300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

MMBT2222A SMALL SIGNAL NPN TRANSISTOR

MMBT2222A SMALL SIGNAL NPN TRANSISTOR SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY

More information

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications MJD34, NJMJD34T4G (NPN), MJD3, NJMJD3T4G (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching

More information

Part Ordering code Marking Remarks Package BFR91A BFR91AGELB-GS08 BFR91A Packed in Bulk TO-50(3)

Part Ordering code Marking Remarks Package BFR91A BFR91AGELB-GS08 BFR91A Packed in Bulk TO-50(3) Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Optocoupler, Phototransistor Output, FEATURES 2842 DESCRIPTION i79004-5 Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS

More information

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS.  THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC26 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm Low saturation voltage: V CE (sat) =. V (max)

More information

Product: Q814 Date: February 1, 2011 Page 1 of 13 Version# 1.2

Product: Q814 Date: February 1, 2011 Page 1 of 13 Version# 1.2 Feature: High Isolation voltage between input and output (Viso = 5000V rms) Current transfer ration (CTR: Min. 20% at I F = ±1mA, V ce =5V) High collector-emitter voltage V CEO =80V Operating Temperature

More information

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.

More information

DATA SHEET. 2PC945 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

DATA SHEET. 2PC945 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28. DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 08 FEATURES Low current (max. 100 ma) Low voltage (max. 50 V). APPLICATIONS General purpose switching

More information

UNA0216 (UN216) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Small Signal Transistor Arrays

UNA0216 (UN216) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Small Signal Transistor Arrays Small Signal Transistor Arrays UNA26 (UN26) This product complies with the RoHS Directive (EU 22/95/EC). Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For

More information

TO-92 NPN Bipolar Transistor

TO-92 NPN Bipolar Transistor /Y/R/BL FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, R, BL - Pb free and RoHS compliant NPN Bipolar Transistor MECHANICAL DATA - Case: small outline

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 15 2004 Oct 11 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and

More information

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC 65 V, 00 ma NPN general-purpose transistors Rev. 06 7 February 006 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device

More information

Applications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000

Applications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000 YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R

More information

查询 D2553 供应商 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553. DC I C 8 A Pulse I CP 16

查询 D2553 供应商 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553. DC I C 8 A Pulse I CP 16 查询 D2553 供应商 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm High

More information

BDW93C, BDW94C Series

BDW93C, BDW94C Series Features Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage- CEO (sus) = (Minimum) Collector-emitter saturation voltage- CE (sat) = 2 (Maximum)

More information

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC 2SCR53P NPN.0A 50 Middle Power Transistor Datasheet Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR53P 3) Low CE(sat) CE(sat) =0.35(Max.) (I C /I B =500mA/25mA) 4) Lead Free/RoHS

More information

BDW94/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C

BDW94/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C Power Linear and Switching Applications Power Darlington TR Complement to BDW93, BDW93A, BDW93B and BDW93C respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD EIGHT HIGH OLTGE, HIGH CURRENT DRLINGTON RRYS DESCRIPTION The is a high voltage, high current Darlington array comprised of eight NPN Darlington pairs. The device features

More information

BFG520; BFG520/X; BFG520/XR

BFG520; BFG520/X; BFG520/XR BFG; BFG/X; BFG/XR Rev. 4 3 November 7 Product data sheet Dear customer, IMPORTNT NOTICE s from October st, 6 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future

More information

NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS

NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) SC Audio Frequency Amplifier Applications Unit: mm Complementary to SA6 Small collector output capacitance: C ob =.8 pf (typ.) High transition

More information

C 2 B 1 E 1 E 2 B 2 C 1. Top View

C 2 B 1 E 1 E 2 B 2 C 1. Top View MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification

More information

BFQ67 / BFQ67R / BFQ67W

BFQ67 / BFQ67R / BFQ67W Not for new design, this product will be obsoleted soon Silicon NPN Planar RF Transistor BFQ67 / BFQ67R / BFQ67W Features Small feedback capacitance Low noise figure High transition frequency Lead (Pb)-free

More information

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector

More information

NPN/PNP general-purpose double transistors. NPN/PNP general-purpose double transistors. Table 1: Product overview Type number Package Configuration

NPN/PNP general-purpose double transistors. NPN/PNP general-purpose double transistors. Table 1: Product overview Type number Package Configuration Rev. 0 2 November 200 Product data sheet 1. Product profile 1.1 General description. Table 1: Product overview Type number Package Configuration Philips JEIT PIMZ2 SC-7 NPN/PNP double transistors PUMZ2

More information

2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C)

2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: VCE (sat) =. V (max) (IC = A) High-speed switching

More information

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed

More information

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C TOSHIBA Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications Unit: mm High power dissipation: P C = W () Good h FE linearity Absolute Maximum Ratings () Characteristics Symbol Rating

More information

PNT723T503E0-2 High EB High DC gain Ultra-Small package switch transistor

PNT723T503E0-2 High EB High DC gain Ultra-Small package switch transistor Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Package: SOT-723 Emitter -Base Breakdown Voltage 11V High DC current gain typical 38 Low Saturation Voltage 8mv.15 continuous collector

More information

TIP120, 121, 122, 125, 126, 127

TIP120, 121, 122, 125, 126, 127 Features: Collector - emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126 100 V (minimum) - TIP122, TIP127 Collector - emitter saturation voltage

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PMBTA64 PNP Darlington transistor. Product specification Supersedes data of 2002 Nov 07.

DISCRETE SEMICONDUCTORS DATA SHEET. PMBTA64 PNP Darlington transistor. Product specification Supersedes data of 2002 Nov 07. DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2002 Nov 07 2004 Jan 22 FETURES High current (max. 500 m) Low voltage (max. 30 V) High DC current gain (min. 10000). PPLICTIONS High input impedance

More information

NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω

NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection 4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5000 V RMS Interfaces with common logic families C 2 5 C Input-output coupling capacitance < pf NC 3 4

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: C ob = 2.5 pf (typ.) High

More information

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu Silicon NPN Planar RF Transistor BFW92 Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features High power gain Low noise figure 3 2 94 9308

More information

MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR FEATURES MECHANICAL DATA ABSOLUTE MAXIMUM RATINGS THERMAL CHARACTERISTICS

MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR FEATURES MECHANICAL DATA ABSOLUTE MAXIMUM RATINGS THERMAL CHARACTERISTICS PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mW FEATURES PNP epitaxial silicon, planar design 0.120(3.04) 0.110(2.80) Collectoremitter voltage V CE = 40V Collector current I C =600mA Complimentary

More information

BC546A/B/C ~ BC550A/B/C Taiwan Semiconductor

BC546A/B/C ~ BC550A/B/C Taiwan Semiconductor NPN Transistor A/B/C ~ BC550A/B/C FEATURES For switching and AF amplifier applications These types are subdivided into three groups A, B and C according to their current gain Moisture sensitivity level

More information

BC846BM3T5G. General Purpose Transistor. NPN Silicon

BC846BM3T5G. General Purpose Transistor. NPN Silicon General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter

More information

Taping code. Reel size (mm) 2SC5824 MPT T ,000 UP

Taping code. Reel size (mm) 2SC5824 MPT T ,000 UP NPN 3.0A 60 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 60 I C 3A Base Collector Emitter Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low CE(sat)

More information

Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR8PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor

More information

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION

More information

BFR91. Silicon NPN Planar RF Transistor. Vishay Semiconductors

BFR91. Silicon NPN Planar RF Transistor. Vishay Semiconductors Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1

More information

Q817 series 4-PIN DC INPUT OPTOCOUPLER Feature: Certification & Compliance: Halogen Free

Q817 series 4-PIN DC INPUT OPTOCOUPLER Feature: Certification & Compliance: Halogen Free Feature: Certification & Compliance: Halogen Free Pb free and RoHS Compliant High Isolation voltage between input and output UL recognized (File # E338132) (Viso = 5000V rms) VDE recognized (File # 40030457)

More information

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Preferred Devices NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFT92 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFT92 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 November 1992 DESCRIPTION PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband

More information

QST3 V CEO -30V I C -5A. Datasheet. PNP -5A -30V Middle Power Transistor. Outline

QST3 V CEO -30V I C -5A. Datasheet. PNP -5A -30V Middle Power Transistor. Outline PNP -5A -30V Middle Power Transistor Datasheet Features Parameter 1) Suitable for Middle Power Driver 2) Complementary NPN Types : QSX2 3) Low V CE(sat) V CE(sat) = -0.25V(Max.) (I C /I B = -2A / -40mA)

More information