SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC636 BC637 BC638 BC639 BC640 NPN PNP

Transcription

1 Continental Device India imited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 ic# QSC/ SIICON PANAR EPITAXIA TRANSISTORS BC635 BC636 E C B Driver Stages of Audio Amplifiers Applications Complementary PNP Transistors BC636, BC638, BC640 ABSOUTE MAXIMUM RATINGS (T a =25ºC unless specified otherwise) DESCRIPTION SYMBO V CEO Collector Emitter Voltage V Collector Base Voltage V CBO V Emitter Base Voltage V EBO 5.0 V Collector Current Continuous I C 1.0 A Power T a =25ºC P D 800 mw Derate Above 25ºC 6.4 mw/ºc Power T c =25ºC P D 2.75 W Derate Above 25ºC 22 mw/ºc Operating And Storage Junction Temperature Range T j, T stg -55 to +150 ºC THERMA RESISTANCE Junction to Ambient in free air Junction to case R th(j-a) R th(j-c) ºC/W ºC/W EECTRICA CHARACTERISTICS (T a =25ºC unless specified otherwise) DESCRIPTION SYMBO TEST CONDITION Collector Emitter Voltage V CEO * I C =10mA,I B =0 >45 >60 >80 V Collector Base Voltage V CBO I C =100µA,I E =0 >45 >60 >80 V Emitter Base Voltage V EBO I E =10µA, I C =0 >5.0 V Collector Cut off Current I CBO V CB =30V, I E = 0 <100 nα I CBO T a = 125 ºC V CB =30V, I E = 0 <10 µa Base Emitter On Voltage V BE (on) * I C =500mA, V CE =2V <1.0 V Collector Emitter Saturation Voltage V CE(sat) * I C =500mA,I B =50mA <0.5 V *Pulse Condition: Width < 300ms, Duty Cycle <2%. Continental Device India imited Data Sheet Page 1 of 4

2 SIICON PANAR EPITAXIA TRANSISTORS BC635 BC636 E C B Complementary PNP Transistors BC636, BC638, BC640 EECTRICA CHARACTERISTICS (T a =25ºC unless specified otherwise) DESCRIPTION SYMBO TEST CONDITION DC Current Gain h E V CE =2V,I C =5mA >25 V CE =2V,I C =150mA Group -10 Group -16 V CE =2V,I C =500mA >25 DYNAMIC CHARACTERISTICS Transition requency f T NPN I C =50mA, V CE =2V Typ 200 MHz PNP f=100mhz Typ 150 MHz Output Capacitance C ob V CB =10V, f=1mhz NPN PNP Typ 7.0 Typ 9.0 Input Capacitance C ib NPN Ic=0, V BE =0.5V Typ 50 PNP f=1mhz Typ 110 *Pulse Condition: Width < 300ms, Duty Cycle <2%. Continental Device India imited Data Sheet Page 2 of 4

3 BC635 BC637 BC639 NPN BC636 BC638 BC640 PNP Transistors in Tape and Ammo Pack Solderability Ensured Dimension With '' Beyond '' Uncontrolled B D A A G H C PIN CONIGURATION 1. BASE 2. COECTOR 3. EMITTER A K D SEC AA E DIM MIN. MAX. A B C D E DEG G H K All diminsions in mm. Mechanical Data h t1 T t h H1 Ho A H3 H2 All dimensions in mm 1 ITEM P2 A1 Po P 2 C1 C2 (p) Do h1 SYMBO h1 W2 Wo W1 W SPECIICATION MIN. NOM. MAX. TO. BODY WIDTH A BODY HEIGHT A BODY THICKNESS T PITCH O COMPONENT P 12.7 ± 1.0 EED HOE PITCH Po 12.7 ± 0.3 EED HOE CENTRE TO COMPONENT CENTRE P ± 0.4 DISTANCE BETWEEN OUTER EADS COMPONENT AIGNMENT SIDE VIEW h COMPONENT AIGNMENT RONT VIEW h TAPE WIDTH W 18 ± 0.5 HOD-DOWN TAPE WIDTH Wo 6 ± 0.2 HOE POSITION W HOD-DOWN TAPE POSITION W2 0.5 ± 0.2 EAD WIRE CINCH HEIGHT Ho 16 ± 0.5 COMPONENT HEIGHT H ENGTH O SNIPPED EADS 11.0 EED HOE DIAMETER Do 4 ± 0.2 TOTA TAPE THICKNESS t 1.2 EAD - TO - EAD DISTANCE 1, STAND O H CINCH HEIGHT H3 3.0 EAD PARAEISM C1 - C PU - OUT ORCE (P) 6N Ammo Pack Style Adhesive Tape on Top Side lat side CUMUATIVE PITCH ERROR 1.0 mm/20 PITCH TO BE MEASURED AT BOTTOM O CINCH AT TOP O BODY AT TOP O BODY t NOTES 1. Maximum alignment deviation between leads will not to be greater than 0.2mm. 2. Maximum non-cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 3. Holddown tape will not exceed beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 4. There will be no more than three (3) consecutive missing components in a tape. 5. A tape trailer, having at least three feed holes are provided after the last component in a tape. 6. Splices should not interfere with the sprocket feed holes. abel 43 (1.7") 332 (13") lat Side of Transistor and Adhesive Tape Visible 2000 pcs./ammo Pack REMARKS EED Carrier Strip 186 (7.3") Packing Detail PACKAGE STANDARD PACK INNER CARTON BOX OUTER CARTON BOX Details Net Weight/Qty Size Qty Size Qty Gr Wt Bulk T&A 1K/polybag 2K/ammo box 200 gm/1k pcs 645 gm/2k pcs 3" x 7.5" x 7.5" 12.5" x 8" x 1.8" 5K 2K 17" x 15" x 13.5" 17" x 15" x 13.5" 80K 32K 23 kgs 12.5 kgs Continental Device India imited Data Sheet Page 3 of 4

4 Notes BC635 BC636 Disclaimer The product information and the selection guides facilitate selection of the CDI's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and on the CDI Web Site/CD are believed to be accurate and reliable. CDI however, does not assume responsibility for inaccuracies or incomplete information. urthermore, CDI does not assume liability whatsoever, arising out of the application or use of any CDI product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDI customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDI will not be responsible for any damages resulting from such sale(s). CDI strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. BC635_40Rev280502D CDI is a registered Trademark of Continental Device India imited C-120 Naraina Industrial Area, New Delhi , India. Telephone ax , sales@cdil.com Continental Device India imited Data Sheet Page 4 of 4

5 This datasheet has been downloaded from: Datasheets for electronic components.