SILICON CARBIDE (SiC) MERGED-PiN-SCHOTTKY (MPS ) DIODE

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1 SILICON CARBIDE (SiC) MERGED-PiN-SCHOTTKY (MPS ) DIODE GeneSiC s new generation of SiC diodes feature the combination of excellent forward and switching characteristics with best-in-class surge current robustness and thermal conductivity. G C 2X 10 MPS G GeneSiC Semiconductor C Technology Generation (or B) 2X Common Cathode or Dual Diode (or Blank if Single Diode) 10 Continuous (A) Rating at Rated Voltage (V F ) MPS Merged PiN-Schottky (MPS ) Series (or SLT Series) 12 Repetitive Peak Voltage Multiplier * 100 (V) 247 Industry Standard Code 214 DO TO (DPAK-2L) 263 TO (D2PAK-7L) 220 TO or TO-220-ISO or TO-220-FP 247 TO or TO (Common Cathode Dual Diode) 227 SOT-227 (Dual Diode) DO-214 TO TO TO TO-220-ISO TO-220-FP TO TO SOT-227 Features High Avalanche (UIS) Capability Enhanced Capability Superior Figure of Merit / Low Thermal 175 C Maximum Operating Temperature Temperature Independent Fast Switching Positive Temperature Coefficient of V F Benefits Low Standby Losses Improved Circuit Efficiency (Lower Overall Cost) Low Switching Losses Ease of Paralleling without Thermal Runaway Smaller Heat Sink Requirements Low Recovery Low Device Capacitance

2 Bare Chip 650 V DO-214 TO-220-ISO TO A 4 A 6 A 8 A 10 A 12 A 50 A 1200 V Bare Chip DO-214 TO TO TO TO SOT A 2 A 5 A 8 A 10 A 15 A 20 A 30 A 40 A 50 A 100 A 200 A Bare Chip TO A 10 A 25 A 50 A Bare DO-214 TO-220-FP TO Chip 0.3 A 5 A

3 PRODUCT SELECTOR GUIDE Silicon Carbide (SiC) Merged-PiN-Schottky (MPS ) Diode 650 V (SLT Series) SM GB01SLT DO A 7 nc 10 A 64 W 1 μa 650 V (MPS Series) SM GC04MPS TO-220-FP 4 A GC06MPS TO-220-FP 6 A GC08MPS TO-220-FP 8 A GC10MPS TO-220-FP 10 A GC12MPS TO-220-FP 12 A GC50MPS TO A Coming Soon 1200 V (SLT Series) SM GB01SLT DO A 4 nc 10 A 19 W 0.1 μa GB01SLT TO A 4 nc 10 A 65 W 0.1 μa GB02SLT DO A 8 nc 18 A 39 W 0.2 μa GB02SLT TO A 8 nc 18 A 93 W 0.2 μa GB05SLT TO A 22 nc 48 A 200 W 0.4 μa GB10SLT TO A 40 nc 82 A 341 W 1 μa GB20SLT TO A 79 nc 120 A 549 W 1.8 μa GB50SLT TO A 199 nc 300 A 1228 W 4 μa

4 1200 V (MPS Series) SM GC02MPS TO A 8 nc 18 A 101 W 0.2 μa GC05MPS TO A 22 nc 48 A 200 W 0.4 μa GC05MPS TO A 22 nc 48 A 218 W 0.4 μa GC08MPS TO A 33 nc 65 A 272 W 0.7 μa GC08MPS TO A 33 nc 65 A 308 W 0.7 μa GC10MPS TO A 40 nc 82 A 341 W 1 μa GC10MPS TO A 40 nc 82 A 388 W 1 μa GC2X5MPS TO A 44 nc * 96 A 398 W 0.8 μa GC15MPS TO A 66 nc 100 A 598 W 1.4 μa GC15MPS TO A 66 nc 100 A 512 W 1.4 μa GC2X8MPS TO A 66 nc 100 A 538 W 1.4 μa GC20MPS TO A 79 nc 120 A 549 W 1.8 μa GC2X10MPS TO A 80 nc 164 A 672 W 2 μa GC2X15MPS TO A 132 nc 200 A 1024 W 2.8 μa GC2X20MPS TO A 158 nc 240 A 1098 W 3.6 μa GC50MPS TO A 199 nc 300 A 1228 W 4 μa GB2X50MPS SOT A 398 nc 600 A 454 W 8 μa GB2X100MPS SOT A 796 nc 1200 A 1088 W 16 μa (MPS Series) SM GB05MPS TO A 21 nc 34 A 224 W 1 μa GB10MPS TO A 43 nc 65 A 426 W 2 μa GB25MPS TO A 103 nc 115 A 843 W 5 μa GB50MPS TO A 206 nc 210 A 1625 W 10 μa SM GAP3SLT DO A 3 nc 2 A 105 W 1 μa GAP3SLT33-220FP TO-220-FP 0.3 A 3 nc 2 A 89 W 1 μa GB05MPS TO A Coming Soon

5 Repetitive Voltage V RRM Bare Chip GC01MPS06-CAL 1 A GC04MPS06-CAL 4 A GC06MPS06-CAL 650 V 6 A Coming Soon GC10MPS06-CAL 10 A GC50MPS06-CAL 50 A GC01MPS12-CAL 1 A 4 nc 0.1 μa GC02MPS12-CAL 2 A 8 nc 0.2 μa GC05MPS12-CAL 5 A 22 nc 0.4 μa GC08MPS12-CAL 1200 V 8 A 33 nc 0.7 μa GC10MPS12-CAL 10 A 40 nc 1 μa GC20MPS12-CAL 20 A 79 nc 1.8 μa GC50MPS12-CAL 50 A 199 nc 4 μa GC05MPS17-CAL 5 A 21 nc 1 μa GC25MPS17-CAL 25 A 103 nc 5 μa GAP3SHT33-CAU 1 A 3 nc 1 μa Silicon Carbide (SiC) MOSFET 1200 V GR20MT12K TO mω GR40MT12J TO mω GR40MT12D TO mω GR40MT12K TO mω GR80MT12J TO mω GR80MT12D TO mω GR80MT12K TO mω GR160MT12J TO mω GR160MT12D TO mω GR160MT12K TO mω GR280MT12J TO mω GR280MT12D TO mω GR280MT12K TO mω

6 GR20MT17K TO mω GR45MT17K TO mω GR1000MT17J TO mω GR1000MT17D TO mω GR40MT33Y TO mω GR350MT33J TO mω Bare Chip GR20MT12-CAL GR40MT12-CAL GR80MT12-CAL GR160MT12-CAL GR280MT12-CAL GR20MT17-CAL GR45MT17-CAL GR1000MT17-CAL GR40MT33-CAL GR350MT33-CAL Drain-Source Breakdown Voltage V DSS 1200 V 20 mω 40 mω 80 mω 160 mω 280 mω 20 mω 45 mω 1000 mω 40 mω 350 mω Visit /sic_mosfets to learn more.

7 Custom Design Services At GeneSiC Semiconductor, we collaborate with you in providing custom design services and offer early access to our newest innovations in SiC power device and module technology. It's our mission to stretch limits and challenge breakthrough innovations in conceiving ever more efficient power devices. Our custom services also offer system-level optimization to help customers integrate our products in to your system to reach the most efficient solution possible. Learn More Visit to learn more about our Silicon Carbide (SiC) power products and get technical support. Have additional questions? Contact us at or