APT80SM120B 1200V, 80A, 40mΩ

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1 V, A, mω Package Silicon Carbide N-Channel Power MOSFET TO-247 DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. D G S FEATURES / TYPICAL APPLICATIONS SiC MOSFET Features: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, Tj(max) = +175C Fast and reliable body diode Superior avalanche ruggedness SiC MOSFET Benefits: High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external Free Wheeling Diode Lower system cost of ownership MAXIMUM RATINGS Applications: PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution Symbol Parameter Ratings Unit S Drain Source Voltage V Continuous Drain T C Continuous Drain T C = C 55 M Pulsed Drain Current 1 19 Gate-Source Voltage - to +25 V P D Linear Derating Factor 3.7 W/ C Total Power T C 555 W A THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit R θjc Junction to Case Thermal Resistance C/W T j Operating Junction Temperature T stg Storage Junction Temperature Range C T L Soldering Temperature for Seconds (1.6mm from case) 2 Torque Mounting Torque (TO-247 Package), 6-32 or M3 screw in lbf 1.1 N m 1

2 Symbol Parameter Test Conditions Min Typ Max Unit V (BR)DSS Drain-Source Breakdown Voltage = V, V R DS(on) Drain-Source On Resistance 2 = V, = A 55 mω (th) Gate-Source Threshold Voltage V =, (th) / Threshold Voltage Temperature Coefficient -5. mv/ C SS STATIC CHARACTERISTICS V Zero Gate Voltage Drain Current DS = V µa = V = 125 C 5 I GSS Gate-Source Leakage Current = +V / -V ± na unless otherwise specified DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit C iss Input Capacitance 385 = V, V DD = V C rss Reverse Transfer Capacitance 25 f = 1MHz C oss Output Capacitance 2 pf Q g Total Gate Charge = /V 2 Q gs Gate-Source Charge V DD nc Q gd Gate-Drain Charge = A t d(on) Turn-On Delay Time V DD 17 t r Current Rise Time = /V t d(off) Turn-Off Delay Time = A 45 ns f L = 115 µh E on2 Turn-On Switching Energy 4 1 T c µj E off Turn-Off Switching Energy Freewheeling Diode = APTSCEB 3 t Current Fall Time R G = 3. Ω 3 25 t d(on) Turn-On Delay Time V DD = 466V 15 t = /V r Current Rise Time = 3A ns t d(off) Turn-Off Delay Time 5 R G = 3. Ω 3 t f Current Fall Time 25 L = 115 µh E on2 Turn-On Switching Energy 4 3 T c µj E off Turn-Off Switching Energy Freewheeling Diode = APTSCEB 43 ESR Equivalent Series Resistance f = 1MHz, 25mV, Drain Short.58 Ω SCWT Short Circuit Withstand Time = 9V, = V, T C 4 μs E AS Avalanche Energy, Single Pulse = 145V, = V, = A, T C 35 mj Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit V SD Diode Forward Voltage I SD = A, = V 3.7 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge I SD = A, V DD di/dt = -A/µs 5 nc I rrm Reverse Recovery Current 12.2 A unless otherwise specified 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature 2 Pulse test: Pulse Width < 3µs, duty cycle < 2%. 3 R G is total gate resistance including internal gate driver impedance. 4 E on2 includes energy of APTSCEB free wheeling diode. 2

3 = V = 75 C = 125 C = -5 C V 18V 6V 16V 14V 12V V 8V Figure 1, Output Characteristics Figure 2, Output Characteristics V 18V 16V 14V 12V V 8V 6V Figure 3, Output Characteristics 18V 16V V 14V 12V V 8V 6V Figure 4, Output Characteristics R DS(on), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED TO 25 C) NORMALIZED TO = A , JUNCTION TEMPERATURE ( C) Figure 5, R DS(on) vs Junction Temperature, GATE-TO-SOURCE VOLTAGE (V) 15 5 Q GS Q GD I GS S = A Q G 1 2 Q G, GATE CHARGE (nc) Figure 6, Gate Charge Characteristics 3

4 C, CAPACITANCE (pf) f = 1MHz = V C iss C oss C rss 1 Figure 7, Capacitance vs Drain-to-Source Voltage,DRAIN CURRENT (A) = 125 C = C = 75 C = 5 C , GATE-TO-SOURCE VOLTAGE (V) Figure 8, Output Characteristics vs Temperature S, REVERSE DRAIN CURRENT (A) S, REVERSE DRAIN CURRENT (A) = 125 C Figure 9, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction Figure, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction S, REVERSE DRAIN CURRENT (A) V (BR)DSS, BREAKDOWN VOLTAGE (V) (NORMALIZED TO 25 C) Figure 11, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction , JUNCTION TEMPERATURE ( C) Figure 12, Breakdown Voltage vs Temperature 4

5 (th), THRESHOLD VOLTAGE (V) (NORMALIZED TO 25 C) , JUNCTION TEMPERATURE ( C) Figure 13, Threshold Voltage vs Temperature 1 R DS(on) T C = C µs µs 1ms ms ms/dc.1 1 Figure 14, Forward Safe Operating Area.3 Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE Duty Factor D = t1 /t 2 Peak = P DM x Z θjc + T C Note: P DM t 1 t 2 RECTANGULAR PULSE DURATION (SECONDS) Figure 15, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration TO-247 (B) Package Outline 4.69 (.185) 5.31 (.9) 1.49 (.59) 2.49 (.98) (.6) (.6) 6.15 (.242) BSC 5.38 (.212) 6. (.244) Drai n. (.819) (.845) 3.5 (.138) 3.81 (.15). (.16).79 (.31) 2.21 (.87) 2.59 (.2) 4.5 (.177) Max (.7).32 (.) 1.1 (.) 1. (.55) 5.45 (.215) BSC 2-Plcs (.113) 3.12 (.123) 1.65 (.65) 2.13 (.84) Gate Drai n Source Dimensions in Millimeters (Inches) 5

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