APT80SM120J 1200V, 56A, 40mΩ Package APT80SM120J

Size: px
Start display at page:

Download "APT80SM120J 1200V, 56A, 40mΩ Package APT80SM120J"

Transcription

1 APT8SM12J 12V, 56A, 4mΩ Package APT8SM12J PRELIMINARY Silicon Carbide N-Channel Power MOSFET DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. G S ISOTOP D S S OT -227 "UL Recognized" file # E D G S SiC MOSFET Features: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, Tj(max) = +175C Fast and reliable body diode Superior avalanche ruggedness FEATURES / TYPICAL APPLICATIONS SiC MOSFET Benefits: High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external Free Wheeling Diode Lower system cost of ownership Applications: PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution MAXIMUM RATINGS Symbol Parameter Ratings Unit S Drain Source Voltage 12 V Continuous Drain T C 56 Continuous Drain T C = 1 C 4 M Pulsed Drain Current Gate-Source Voltage -1 to +25 V P D Linear Derating Factor 1.82 W/ C Total Power T C 273 W THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit R θ JC Junction to Case Thermal Resistance.55 C/W A T j Operating Junction Temperature T stg Storage Junction Temperature Range C W T Package Weight 1.3 oz Torque Mounting Torque (SOT-227 Package), 6-32 or M3 screw 5 1 in lbf N m Rev B 12/216 1

2 APT8SM12J Symbol Parameter Test Conditions Min Typ Max Unit C iss Input Capacitance 385 = V, V DD = 1V C rss Reverse Transfer Capacitance 25 f = 1MHz C oss Output Capacitance 22 Q g Total Gate Charge = /2V Q gs Gate-Source Charge V DD = 8V 38 Q gd Gate-Drain Charge = 4A 56 t d(on) Turn-On Delay Time V DD = 8V t r t d(off) Current Rise Time Turn-Off Delay Time = /2V = 4A 1 5 R G = 3. Ω 3 t f Current Fall Time 25 L = 115 µh E on2 Turn-On Switching Energy 4 11 T c E off Turn-Off Switching Energy Freewheeling Diode = APT2SCE12B 3 t d(on) Turn-On Delay Time V DD = 8V t = /2V r Current Rise Time 1 = 4A t d(off) Turn-Off Delay Time 5 R G = 3. Ω 3 t f Current Fall Time 25 L = 115 µh E on2 Turn-On Switching Energy 4 13 T c = 15 C E off Turn-Off Switching Energy Freewheeling Diode = APT2SCE12B 43 ESR Equivalent Series Resistance f = 1MHz, 25mV, Drain Short.58 Ω SCWT Short Circuit Withstand Time = 96V, = 2V, T C 4 μs E AS Avalanche Energy, Single Pulse = 145V, = 2V, = 4A, T C 1 mj unless otherwise specified STATIC CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit V (BR)DSS Drain-Source Breakdown Voltage = V, 12 V R DS(on) Drain-Source On Resistance 2 = 2V, = 4A 4 55 mω (th) Gate-Source Threshold Voltage V =, (th) / Threshold Voltage Temperature Coefficient -5. mv/ C SS Zero Gate Voltage Drain Current unless otherwise specified Source-Drain Diode Characteristics DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit V SD Diode Forward Voltage I SD = 4A, = V 3.7 V t rr Reverse Recovery Time 8 ns Q rr Reverse Recovery Charge I SD = 4A, V DD = 8V di/dt = -1A/µs 54 nc I rrm Reverse Recovery Current 12.2 A 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature 2 Pulse test: Pulse Width < 38µs, duty cycle < 2%. 3 R G is total gate resistance including internal gate driver impedance. 4 E on2 includes energy of APT2SCE12B free wheeling diode. = 12V = V 1 = 125 C 25 I GSS Gate-Source Leakage Current = +2V / -1V ±1 na µa pf nc ns µj ns µj Rev B 12/216 2

3 APT8SM12J = 2V = 75 C = 125 C = -5 C = 15 C V 18V 6V 16V 14V 12V 1V 8V Figure 1, Output Characteristics Figure 2, Output Characteristics = 15 C 2V 18V 16V 14V 12V 1V 8V 6V Figure 3, Output Characteristics V 16V 2V 14V 12V 1V 8V 6V Figure 4, Output Characteristics R DS(on), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED TO 25 C) NORMALIZED TO = 2A , JUNCTION TEMPERATURE ( C) Figure 5, R DS(on) vs Junction Temperature, GATE-TO-SOURCE VOLTAGE (V) Q GS Q GD I GS S = 4A = 8V Q G Q G, GATE CHARGE (nc) Figure 6, Gate Charge Characteristics Rev B 12/216 3

4 APT8SM12J C, CAPACITANCE (pf) f = 1MHz = V C iss C oss C rss Figure 7, Capacitance vs Drain-to-Source Voltage,DRAIN CURRENT (A) = 15 C = 125 C = 1 C = 75 C = 5 C , GATE-TO-SOURCE VOLTAGE (V) Figure 8, Output Characteristics vs Temperature S, REVERSE DRAIN CURRENT (A) S, REVERSE DRAIN CURRENT (A) = 125 C Figure 9, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction Figure 1, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction S, REVERSE DRAIN CURRENT (A) = 15 C V (BR)DSS, BREAKDOWN VOLTAGE (V) (NORMALIZED TO 25 C) Figure 11, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction , JUNCTION TEMPERATURE ( C) Figure 12, Breakdown Voltage vs Temperature Rev B 12/216 4

5 APT8SM12J 2. 2 (th), THRESHOLD VOLTAGE (V) (NORMALIZED TO 25 C) R DS(on) T C = 1 C 1µs 1µs 1ms 1ms 1ms/DC , JUNCTION TEMPERATURE ( C) Figure 13, Threshold Voltage vs Temperature Figure 14, Forward Safe Operating Area. 6 Z θjc, THERMAL IMPEDANCE ( C/W) D = Note: P DM t 1 t 2 Duty Factor D = t1 /t Peak T SINGLE PULSE J = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 15, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 31.5 (1.24) 31.7 (1.248) SOT-227 (ISOTOP ) Package Outline 7.8 (.37) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48) 8.9 (.35) 9.6 (.378) Hex Nut M 4 (4 places ) r = 4. (.157) (2 places) 4. (.157) 4.2 (.165) (2 places).75 (.3).85 (.33) 12.6 (.496) 12.8 (.54) 25.2 (.992) 25.4 (1.) 14.9 (.587) 15.1 (.594) 3.1 (1.185) 3.3 (1.193) 38. (1.496) 38.2 (1.54) 3.3 (.129) 3.6 (.143) 1.95 (.77) 2.14 (.84) * Source Drain * Source *Source terminals are shorted internally. Current handling capability is equal for either Source terminal. Gate Rev B 12/216 Dimensions in Millimeters (Inches) 5

6 ADVANCED TECHNICAL INFORMATION Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer s responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixedsignal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world s standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Ethernet Solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 4,8 employees globally. Learn more at Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA USA Within the USA: +1 (8) Outside the USA: +1 (949) Sales: +1 (949) Fax: +1 (949) sales.support@microsemi.com Rev B 12/ Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. 6

APT80SM120B 1200V, 80A, 40mΩ

APT80SM120B 1200V, 80A, 40mΩ V, A, mω Package Silicon Carbide N-Channel Power MOSFET TO-247 DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT

More information

Silicon Carbide N-Channel Power MOSFET

Silicon Carbide N-Channel Power MOSFET MSC080SMA120B Datasheet Silicon Carbide N-Channel Power MOSFET Advanced Technical Information (ATI) June 2018 Contents 1 Revision History... 1 1.1 ATI... 1 2 Product Overview... 2 2.1 Features... 2 2.2

More information

1011GN-1200V 1200 Watts 50 Volts 32us, 2% L-Band Avionics 1030/1090 MHz

1011GN-1200V 1200 Watts 50 Volts 32us, 2% L-Band Avionics 1030/1090 MHz GENERAL DESCRIPTION The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 db gain, 1200 Watts of pulsed RF output power at 32us,

More information

Ultrafast Soft Recovery Rectifier Diode

Ultrafast Soft Recovery Rectifier Diode APT30DQ60BG Datasheet Ultrafast Soft Recovery Rectifier Diode Final March 2018 Contents 1 Revision History... 1 1.1 Revision E... 1 1.2 Revision D... 1 1.3 Revision C... 1 1.4 Revision B... 1 1.5 Revision

More information

1011GN-1600VG 1600 Watts 50/52 Volts 32us, 2% L-Band Avionics 1030/1090 MHz

1011GN-1600VG 1600 Watts 50/52 Volts 32us, 2% L-Band Avionics 1030/1090 MHz GENERAL DESCRIPTION The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output

More information

Very Low Stray Inductance Phase Leg SiC MOSFET Power Module

Very Low Stray Inductance Phase Leg SiC MOSFET Power Module MSCMC120AM03CT6LIAG Datasheet Very Low Stray Inductance Phase Leg SiC MOSFET Power Module Final May 2018 Contents 1 Revision History... 1 1.1 Revision A... 1 2 Product Overview... 2 2.1 Features... 2 2.2

More information

Silicon Carbide Semiconductor Products

Silicon Carbide Semiconductor Products Power Matters Silicon Carbide Semiconductor Products Low Switching Losses Low Gate Resistance High Power Density High Thermal Conductivity High Avalanche (UIS) Rating Reduced Heat Sink Requirements High

More information

LX V Octal Series Diode Pairs Array with Redundancy. Description. Features. Applications

LX V Octal Series Diode Pairs Array with Redundancy. Description. Features. Applications LX0 V Octal Series Diode Pairs Array with Redundancy Description The LX0 is a diode array that features high breakdown voltage diodes with ESD protection and built-in redundancy. The array contains series

More information

0912GN-50LE/LEL/LEP 50 Watts 50 Volts 32us, 2% & MIDS MHz

0912GN-50LE/LEL/LEP 50 Watts 50 Volts 32us, 2% & MIDS MHz E Class Earless Driver GaN Transistor Key Features 960-1215MHz 50W Pulsed Output Power 32µS-2% and MIDS Pulsing Common Source Class AB 50V Bias Voltage >60% Efficiency Across the Frequency Band under MIDS

More information

5 - Volt Fixed Voltage Regulators

5 - Volt Fixed Voltage Regulators SG09 5 - Volt Fixed Voltage Regulators Description The SG09 is a self-contained 5V regulator designed to provide local regulation at currents up to A for digital logic cards. This device is available in

More information

500mA Negative Adjustable Regulator

500mA Negative Adjustable Regulator /SG137 500mA Negative Adjustable Regulator Description The family of negative adjustable regulators deliver up to 500mA output current over an output voltage range of -1.2 V to -37 V. The device includes

More information

Quantum SA.45s CSAC Chip Scale Atomic Clock

Quantum SA.45s CSAC Chip Scale Atomic Clock Quantum SA.45s CSAC Chip Scale Atomic Clock Microsemi invented portable atomic timekeeping with QUANTUM TM, the world s first family of miniature and chip scale atomic clocks. Choose QUANTUM TM class for

More information

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C APT2M11JFLL 2V A.11Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power

More information

P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package. Order code V DS R DS(on) max I D

P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package. Order code V DS R DS(on) max I D Datasheet P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package Features Order code V DS R DS(on) max I D STL9P3LLH6-30 V 15 mω -9 A Very low on-resistance Very low

More information

Quantum SA.45s CSAC Chip Scale Atomic Clock

Quantum SA.45s CSAC Chip Scale Atomic Clock Quantum SA.45s CSAC Chip Scale Atomic Clock Microsemi invented portable atomic timekeeping with QUANTUM TM, the world s first family of miniature and chip scale atomic clocks. Choose QUANTUM TM class for

More information

MOSFET = 0V, I D = 16.5A) = 10V, I D = 200V, V GS = 0V) = 0V, T C = 160V, V GS = 0V) = ±30V, V DS. = 2.5mA)

MOSFET = 0V, I D = 16.5A) = 10V, I D = 200V, V GS = 0V) = 0V, T C = 160V, V GS = 0V) = ±30V, V DS. = 2.5mA) APT82JLL 8V A.2Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by

More information

MOSFET = 0V, I D = 10V, 29A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = ±30V, V DS = 0V) = 2.5mA)

MOSFET = 0V, I D = 10V, 29A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = ±30V, V DS = 0V) = 2.5mA) V A.65Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by

More information

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D I DM. Watts P D Linear Derating Factor W/ C T J. Amps E AR E AS UNIT BV DSS = 0V, I D

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D I DM. Watts P D Linear Derating Factor W/ C T J. Amps E AR E AS UNIT BV DSS = 0V, I D APTM35JVFR V A.35Ω POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density

More information

MOSFET UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C = ±30V, V DS = 0V) = 5mA)

MOSFET UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C = ±30V, V DS = 0V) = 5mA) APT2M11JLL 2V A.11Ω POWER MOS 7 R Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement

More information

Ultra Fast NPT - IGBT

Ultra Fast NPT - IGBT APT8GR12JD 12V, 8A, V ce(on) = 2.V Typical Features Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and

More information

Using the Peak Detector Voltage to Compensate Output Voltage Change over Temperature

Using the Peak Detector Voltage to Compensate Output Voltage Change over Temperature Using the Peak Detector Voltage to Compensate Output Voltage Change over Temperature This document explains how to use the driver amplifier s peak detector to compensate the amplifier s output voltage

More information

Super Junction MOSFET

Super Junction MOSFET 65V 94A * *G Denotes RoHS Compliant, Pb Free Terminal Finish. CO LMOS Power Semiconductors Super Junction MOSFET T-Max TM Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche

More information

N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package. Features. Description

N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package. Features. Description N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP160N3LL 30 V 3.2 mω 120 A 136 W Very low

More information

Super Junction MOSFET

Super Junction MOSFET APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv

More information

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V 40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge

More information

HCD80R1K4E 800V N-Channel Super Junction MOSFET

HCD80R1K4E 800V N-Channel Super Junction MOSFET HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

MMA051PP45 Datasheet. DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier

MMA051PP45 Datasheet. DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier MMA051PP45 Datasheet DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of

More information

GP2M020A050H GP2M020A050F

GP2M020A050H GP2M020A050F Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A

More information

MDS9652E Complementary N-P Channel Trench MOSFET

MDS9652E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,

More information

HCD80R650E 800V N-Channel Super Junction MOSFET

HCD80R650E 800V N-Channel Super Junction MOSFET HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.

More information

Prerelease product(s)

Prerelease product(s) Datasheet Automotive N-channel 40 V, 2.0 mω max., 100 A STripFET F7 Power MOSFET in a LFPAK 5x6 package Features TAB G(4) LFPAK 5x6 D(TAB) S(1, 2, 3) 1 Product status link Product summary 2 4 3 G4S123DTAB_LFPAK

More information

HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET

HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested

More information

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power

More information

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS

More information

HCS80R1K4E 800V N-Channel Super Junction MOSFET

HCS80R1K4E 800V N-Channel Super Junction MOSFET HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

N-channel 60 V, Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package. Features. Description. AM15810v1

N-channel 60 V, Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package. Features. Description. AM15810v1 N-channel 60 V, 0.0046 Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V DS R DS(on) max I D STL20N6F7 60 V 0.0054 Ω 20 A 1 2 3 4 PowerFLAT

More information

Features. Applications. Table 1: Device summary Order code Marking Package Packing STWA70N60DM2 70N60DM2 TO-247 long leads Tube

Features. Applications. Table 1: Device summary Order code Marking Package Packing STWA70N60DM2 70N60DM2 TO-247 long leads Tube N- Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STWA70N60DM2 600 V 66 A 446 W 3 2 1 TO-247 long leads Figure 1: Internal schematic

More information

Features. Table 1: Device summary Order code Marking Package Packing STL160N4F7 160N4F7 PowerFLAT TM 5x6 Tape and reel

Features. Table 1: Device summary Order code Marking Package Packing STL160N4F7 160N4F7 PowerFLAT TM 5x6 Tape and reel N-channel 40 V, 2.1 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS R DS(on) max I D STL160N4F7 40 V 2.5 mω 120 A Among the lowest

More information

MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω

MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,

More information

N-Channel 40-V (D-S), 175 C MOSFET

N-Channel 40-V (D-S), 175 C MOSFET N-Channel 4-V (D-S), 75 C MOSFET SUD5N4-9H PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A) c Q g (Typ) 4.9 at V GS = V 5 55 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature High Threshold Voltage

More information

Description. Symbol Parameter FCP260N65S3 Unit V DSS Drain to Source Voltage 650 V

Description. Symbol Parameter FCP260N65S3 Unit V DSS Drain to Source Voltage 650 V FCP260N65S3 N-Channel SuperFET III MOSFET 650 V, 2 A, 260 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 222 mω Ultra Low Gate Charge (Typ. Q g = 24 nc) Low Effective Output Capacitance (Typ. C oss(eff.)

More information

HCA80R250T 800V N-Channel Super Junction MOSFET

HCA80R250T 800V N-Channel Super Junction MOSFET HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C

Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S

More information

HCS80R380R 800V N-Channel Super Junction MOSFET

HCS80R380R 800V N-Channel Super Junction MOSFET HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply

More information

STF12N120K5, STFW12N120K5

STF12N120K5, STFW12N120K5 STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packages Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT TO-220FP

More information

Device Marking Device Package Reel Size Tape Width Quantity FQT1N60C FQT1N60C SOT mm 12mm 4000

Device Marking Device Package Reel Size Tape Width Quantity FQT1N60C FQT1N60C SOT mm 12mm 4000 FQT1N60C N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced

More information

FDS8984 N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ

FDS8984 N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ FDS898 N-Channel PowerTrench MOSFET V, 7A, 3mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω

More information

Description. Symbol Parameter FCMT180N65S3 Unit V DSS Drain to Source Voltage 650 V. - Continuous (T C = 25 o C) 17 - Continuous (T C = 100 o C) 11

Description. Symbol Parameter FCMT180N65S3 Unit V DSS Drain to Source Voltage 650 V. - Continuous (T C = 25 o C) 17 - Continuous (T C = 100 o C) 11 FCMT80N65S3 N-Channel SUPERFET III Easy-Drive MOSFET 650 V, 7 A, 80 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 52 mω Ultra Low Gate Charge (Typ. Q g = 33 nc) Low Effective Output Capacitance (Typ.

More information

FDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω

FDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω FDS935 Dual P-Channel PowerTrench MOSFET - V, -. A, 3 mω Features Max r DS(on) = 3 mω at V GS = - V, I D = -. A Max r DS(on) = 7 mω at V GS = -.5 V, I D = -.9 A High performance trench technology for extremely

More information

Order code V DS R DS(on) max. I D

Order code V DS R DS(on) max. I D Datasheet N-channel 6 V, 165 mω typ., 18 A, MDmesh DM6 Power MOSFET in a TO 22FP package Features Order code V DS R DS(on) max. I D STF26N6DM6 6 V 195 mω 18 A TO-22FP D(2) 1 2 3 Fast-recovery body diode

More information

Base Part Number Package Type Standard Pack Orderable Part Number

Base Part Number Package Type Standard Pack Orderable Part Number V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits

More information

HCI70R500E 700V N-Channel Super Junction MOSFET

HCI70R500E 700V N-Channel Super Junction MOSFET HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

STO36N60M6. N-channel 600 V, 85 mω typ., 30 A, MDmesh M6 Power MOSFET in a TO LL HV package. Datasheet. Features. Applications.

STO36N60M6. N-channel 600 V, 85 mω typ., 30 A, MDmesh M6 Power MOSFET in a TO LL HV package. Datasheet. Features. Applications. Datasheet N-channel 600 V, 85 mω typ., 30 A, MDmesh M6 Power MOSFET in a TO LL HV package Features Order code V DS R DS(on) max. I D 600 V 99 mω 30 A Drain (TAB) Reduced switching losses Lower R DS(on)

More information

Electrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Bre

Electrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Bre FQD8P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.

More information

SMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.

SMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C

More information

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω MDF11N6 N-channel MOSFET 6V MDF11N6 N-Channel MOSFET 6V, 11A,.55Ω General Description The MDF11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance

More information

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300. C (1.6mm from case )

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300. C (1.6mm from case ) SMPS MOSFET PD - 9444A IRFP22N60K HEXFET Power MOSFET Applications V l Hard Switching Primary or PFS Switch DSS R DS(on) typ. I D l Switch Mode Power Supply (SMPS) 600V 240mΩ 22A l Uninterruptible Power

More information

User Guide. NX A Single Channel Mobile PWM Switching Regulator Evaluation Board

User Guide. NX A Single Channel Mobile PWM Switching Regulator Evaluation Board User Guide NX9548 9 A Single Channel Mobile PWM Switching Regulator Evaluation Board Contents 1 Revision History... 1 1.1 Revision 1.0... 1 2 Product Overview... 2 2.1 Key Features... 2 2.2 Applications...

More information

SOT-227 Power Module Single Switch - Power MOSFET, 420 A

SOT-227 Power Module Single Switch - Power MOSFET, 420 A SOT-7 Power Module Single Switch - Power MOSFET, 4 A FEATURES I D > 4 A, T C = 5 C TrenchFET power MOSFET VS-FC4SA SOT-7 PRIMARY CHARACTERISTICS V DSS V R DS(on).3 I () D 33 A at 9 C Type Modules - MOSFET

More information

1 Electrical ratings Electrical characteristics Electrical characteristics (curves)... 6

1 Electrical ratings Electrical characteristics Electrical characteristics (curves)... 6 N-channel 600 V, 0.094 Ω typ., 28 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP35N60DM2 600 V 0.110 Ω 28 A 210 W Figure

More information

APT8052BLL APT8052SLL

APT8052BLL APT8052SLL APT82BLL APT82SLL 8V A.2Ω Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly

More information

Applications. Inverter H-Bridge. G1 S1 N-Channel. S1 Dual DPAK 4L

Applications. Inverter H-Bridge. G1 S1 N-Channel. S1 Dual DPAK 4L FDD35H Dual N & P-Channel PowerTrench MOSFET N-Channel: V, 3.9A, mω P-Channel: -V, -9.A, 9mΩ Features Q: N-Channel Max r DS(on) = mω at V GS = V, I D =.3A Max r DS(on) = mω at V GS = V, I D =.A : P-Channel

More information

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for

More information

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,

More information

APT30M30B2FLL APT30M30LFLL

APT30M30B2FLL APT30M30LFLL POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering

More information

Power MOSFET, 72 A FEATURES DESCRIPTION

Power MOSFET, 72 A FEATURES DESCRIPTION Power MOSFET, 72 A SFA72SA5LC SOT227 PRIMARY CHARACTERISTICS S 5 R DS(on).65 I D 72 A Type Modules MOSFET Package SOT227 FEATURES Fully isolated package Easy to use and parallel Low onresistance Dynamic

More information

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω MDF13N65B N-Channel MOSFET 65V, 14A,.46Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance

More information

Features. Description. Table 1: Device summary. Order code Marking Package Packing STD10LN80K5 10LN80K5 DPAK Tape and reel

Features. Description. Table 1: Device summary. Order code Marking Package Packing STD10LN80K5 10LN80K5 DPAK Tape and reel N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic

More information

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STF100N6F7 100N6F7 TO-220FP Tube

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STF100N6F7 100N6F7 TO-220FP Tube N-channel 60 V, 4.6 mω typ., 46 A STripFET F7 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF100N6F7 60 V 5.6 mω 46 A 25 W Figure 1.

More information

Power MOSFET FEATURES DESCRIPTION. IRF720PbF SiHF720-E3 IRF720 SiHF720 T C = 25 C

Power MOSFET FEATURES DESCRIPTION. IRF720PbF SiHF720-E3 IRF720 SiHF720 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 400 V R DS(on) (Ω) = 10 V 1.8 Q g (Max.) (nc) 0 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single TO-0AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S N-Channel

More information

HCS70R350E 700V N-Channel Super Junction MOSFET

HCS70R350E 700V N-Channel Super Junction MOSFET HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge

ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A

More information

30V N-Channel Trench MOSFET

30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD12N3AT, TTP12N3AT 3V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in

More information

40V N-Channel Trench MOSFET

40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 40V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters

More information

N-Channel 150-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power

More information

MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω

MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS,

More information

T C =25 unless otherwise specified

T C =25 unless otherwise specified WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances

More information

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to

More information

N-Channel PowerTrench MOSFET

N-Channel PowerTrench MOSFET FDMS86369-F85 N-Channel PowerTrench MOSFET 8 V, 65 A, 7.5 mω Features Typical R DS(on) = 5.9 mω at V GS = V, I D = 65 A Typical Q g(tot) = 35 nc at V GS = V, I D = 65 A UIS Capability RoHS Compliant Qualified

More information

Features. Description. AM15572v1_tab. Table 1: Device summary Order code Marking Package Packing STD7LN80K5 7LN80K5 DPAK Tape and reel

Features. Description. AM15572v1_tab. Table 1: Device summary Order code Marking Package Packing STD7LN80K5 7LN80K5 DPAK Tape and reel N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD7LN80K5 800 V 1.15 Ω 5 A DPAK Figure 1: Internal schematic

More information

GP1M018A020CG GP1M018A020PG

GP1M018A020CG GP1M018A020PG Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP1M18A2CG N-channel MOSFET BS R DS(on) MAX 2V 18A

More information

Power MOSFET, 190 A FEATURES DESCRIPTION

Power MOSFET, 190 A FEATURES DESCRIPTION Power MOSFET, 90 A VSFB90SA0 SOT227 PRIMARY CHARACTERISTICS V DSS 00 V I D DC 90 A R DS(on) 6.5 m Type Modules MOSFET Package SOT227 FEATURES Fully isolated package Very low onresistance Fully avalanche

More information

Features. Description. Table 1: Device summary Order code Marking Package Packing STW12N150K5 12N150K5 TO-247 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packing STW12N150K5 12N150K5 TO-247 Tube N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STW12N150K5 1500 V 1.9 Ω 7 A 250 W 1 3 2 Industry

More information

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the

More information

Features. Table 1: Device summary Order code Marking Package Packing STL10LN80K5 10LN80K5 PowerFLAT 5x6 VHV Tape and reel

Features. Table 1: Device summary Order code Marking Package Packing STL10LN80K5 10LN80K5 PowerFLAT 5x6 VHV Tape and reel N-channel 800 V, 0.59 Ω typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code V DS R DS(on) max. I D STL10LN80K5 800 V 0.66 Ω 6 A 1 2 3 4 PowerFLAT

More information

Top View. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSS-13 N4034SS ,500

Top View. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSS-13 N4034SS ,500 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 34mΩ @ = V 7.2A 59mΩ @ = 4.5V 5.5A Description and Applications This MOSFET has been designed to minimize the on-state

More information

QUAD POWER FAULT MONITOR

QUAD POWER FAULT MONITOR SG154 QUAD POWER FAULT MONITOR Description The SG154 is an integrated circuit capable of monitoring up to four positive DC supply voltages simultaneously for overvoltage and undervoltage fault conditions.

More information

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

More information

UG0362 User Guide Three-phase PWM v4.1

UG0362 User Guide Three-phase PWM v4.1 UG0362 User Guide Three-phase PWM v4.1 Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Fax: +1 (949) 215-4996

More information

N-Channel PowerTrench MOSFET

N-Channel PowerTrench MOSFET FDBL86363-F85 N-Channel PowerTrench MOSFET 8 V, 4 A,. mω Features Typical R DS(on) =.5 mω at V GS = V, I D = 8 A Typical Q g(tot) = 3 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to

More information

Complementary N- and P-Channel 40-V (D-S) MOSFET

Complementary N- and P-Channel 40-V (D-S) MOSFET Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel.7 at V GS = V 8. at V GS =.5 V 8 2 P-Channel -. at V GS = - V - 8.5 at V GS = -.5 V -

More information

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

FDP8D5N10C / FDPF8D5N10C/D

FDP8D5N10C / FDPF8D5N10C/D FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET V, 76 A, 8.5 mω Features Max r DS(on) = 8.5 mω at V GS = V, I D = 76 A Extremely Low Reverse Recovery Charge, Qrr % UIL Tested RoHS Compliant

More information

Order code V DS R DS(on) max. I D

Order code V DS R DS(on) max. I D Datasheet N-channel 6 V, 61 mω typ., 39 A, MDmesh M6 Power MOSFET in a TO 247 package Features Order code V DS R DS(on) max. I D STW48N6M6 6 V 69 mω 39 A TO-247 D(2, TAB) 1 3 2 Reduced switching losses

More information

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω MDHTN0Y N-Channel MOSFET 00V, 0.85A,.35Ω General Description The MDHTN0Y uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

More information

Power MOSFET FEATURES. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY V DS (V) 100 R DS(on) (Ω) = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated 175 C Operating

More information

Power MOSFET FEATURES. IRF830PbF SiHF830-E3 IRF830 SiHF830 T C = 25 C

Power MOSFET FEATURES. IRF830PbF SiHF830-E3 IRF830 SiHF830 T C = 25 C Power MOSFET PRODUCT SUMMARY V DS (V) 00 R DS(on) ( ) = 0 V. Q g (Max.) (nc) 38 Q gs (nc).0 Q gd (nc) Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information