Package RoHS Compliant

Transcription

1 Silicon Carbide PiN Diode RRM = 15.0 k I F (Tc=25 C) = 1 A Features 15 k blocking 175 C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching Package RoHS Compliant 2 1 PIN 1 PIN 2 Advantages Highest voltage rectifier commercially available Reduced stacking Reduced system complexity/increased reliability Applications oltage Multiplier Ignition/Trigger Circuits Oil/Downhole Lighting Defense Maximum Ratings at T j = 175 C, unless otherwise specified Parameter Symbol Conditions alues Unit Repetitive peak reverse voltage RRM 15 k Continuous forward current I F 1 A RMS forward current I F(RMS) 0.5 A Operating and storage temperature T j, T stg -55 to 175 C Electrical Characteristics at T j = 175 C, unless otherwise specified Parameter Symbol Conditions alues min. typ. max. Unit Diode forward voltage F I F = 1 A, T j = 25 C 6.4 I F = 1 A, T j = 175 C 4.7 Reverse current I R R = 8 k, T j = 25 C 1 20 R = 8 k, T j = 175 C 100 µa Total reverse recovery charge Q rr I F I R = 1000 F,MAX 558 nc I di F/dt = 70 A/μs F = 1.5 A Switching time t s T j = 175 C R = 1000 < 236 ns I F = 1.5 A R = 1, f = 1 MHz, T j = 25 C 22 Total capacitance C R = 400, f = 1 MHz, T j = 25 C 4 pf R = 1000, f = 1 MHz, T j = 25 C 3 Total capacitive charge Q C R = 1000, f = 1 MHz, T j = 25 C 4.5 nc Apr Page 1 of 4

2 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics at 25 C Figure 3: Typical Junction Capacitance vs Reverse oltage Characteristics Figure 4: Typical Turn Off Characteristics at I k = 0.5 A and R = 1000 Figure 5: Typical Turn Off Characteristics at T j = 175 C and R = 1000 Figure 6: Reverse Recovery Charge vs Cathode Current Apr Page 2 of 4

3 Figure 7: Reverse Recovery Time vs Cathode Current Package Dimensions: PACKAGE OUTLINE (11.18) (0.91) (1.32) A K (7.11) GA01PNS (2.16) (14.48) XXXXXX (1.32) (0.91) Lot Code (9.14) (9.14) (14.48) (14.48) 0.25 (6.35) (0.41) (2.03) (2.03) (0.41) (4.57) NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Apr Page 3 of 4

4 Revision History Date Revision Comments Supersedes 2015/04/30 1 Updated Electrical Characteristics 2014/11/07 0 Initial release Published by GeneSiC Semiconductor, Inc Trade Center Place Suite 155 Dulles, A GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Apr Page 4 of 4

5 SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website ( into LTSPICE (version 4) software for simulation of the GA01PNS MODEL OF GeneSiC Semiconductor Inc. $Revision: 1.1 $ $Date: 30-APR-2015 $ GeneSiC Semiconductor Inc Trade Center Place Ste. 155 Dulles, A COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc. ALL RIGHTS RESERED These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE." Models accurate up to 2 times rated drain current. Start of GA01PNS SPICE Model. MODEL GA01PNS150 D + IS e RS N IKF EG XTI 25 + TRS CJO 2.28E-11 + J M FC B IB 1.00E-03 + PK IAE 1 + TYPE SiC_PiN + MFG GeneSiC_Semi End of GA01PNS SPICE Model Apr Page 1 of 1