High Density Power Semiconductors Integrated Power Solutions
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1 High Density Power Semiconductors Integrated Power Solutions
2 Power Transistors 40V to 700V N-Channel and P-Channel JAN/JANTX/JANTXV Standard Products S Level Equivalent Screening Customized Packaging and Configurations Solitron has been a recognized leader and pioneer in the manufacturing of state-of-the art bipolar power transistor products for over 50 years. Standard Packaging options include TO-3, TO-5, TO-39, TO-66, TO-111 (stud), TO-254, TO-257 and TO-258. Customized leaded or leadless surface mount packages are also available. NPN Type Number Package 19500/ V CBO (V) V CEO (V) I C (Cont) (A) C =25 C (W) 2N2880 * TO N3439 TO-5/ N3440 TO-5/ N3441 TO N3442 TO N3771 TO N3772 TO N3902 TO N5038 TO N5039 TO N5157 TO N5302 TO N5303 TO N5666 * TO-5/ N5667 * TO-5/ N5671 TO N5672 TO N6306 TO N6308 TO * Not available with JAN qualification PNP Type Number Package 19500/ V CBO (V) V CEO (V) I C (Cont) (A) C =25 C (W) 2N4399 TO N5415 * TO-5/ N5416 * TO-5/ N6437 TO N6438 TO * Not available with JAN qualification
3 Small Signal JFETs JAN/JANTX/JANTXV Standard Products N-Channel and P-Channel Low On Resistance <25Ω S Level Equivalent Screening Second Source for Vishay & Siliconix Solitron is the world s leading manufacturer of standard QPL JAN/JANTX/JANTXV small signal JFETs. Solitron s JFET offering features low on-resistance, low capacitance, good isolation and fast switching. High radiation tolerance and space level processing make them ideal for satellite applications. N-Channel Type Number Package 19500/ BV gss Min (V) V gs (off) Min (V) V gs (off) Max (V) I dss Min (ma) I dss Max (ma) R (on) Max (ohms) 2N3821 TO N3822 TO N3823 TO N4338 TO N4339 TO mA N4340 TO N4341 TO N4856 TO N4857 TO N4858 TO N4859 TO N4860 TO N4861 TO P-Channel Type Number Package 19500/ BV gss Min (V) V gs (off) Min (V) V gs (off) Max (V) I dss Min (ma) I dss Max (ma) R (on) Max (ohms) 2N2609 TO N5114 TO N5115 TO N5116 TO
4 MOSFETs, Diodes & IGBTs Silicon and Silicon Carbide solutions from 500V to 1200V Screened to COTS, MIL-PRF or MIL-PRF C Operation available Customized Packaging and Configurations Hermetic Packages Our capabilities range from a single MOSFET or Diode in a hermetic TO-254/257/258 to duals, quads and customized bridge configurations.. New for Solitron are COTS based high voltage silicon carbide diodes in plastic TO-247 configurations. Features include high surge currents, ultra-low reverse recovery current, high bandwidth and fast temperature-independent switching. N-Channel MOSFETs - Silicon Carbide Type Number Voltage Drain Current R DSon Package Isolated Case Temp. Range SMF A 40mΩ TO-258 hermetic Yes -55 C to 125 C SMF A 30mΩ TO-258 hermetic Yes -55 C to 125 C SMF A 95mΩ TO-258 hermetic Yes -55 C to 125 C N-Channel MOSFETs - Silicon Type Number Voltage Drain Current R DSon Package Isolated Case Temp. Range SMF A 900mΩ TO-258 hermetic Yes -55 C to 125 C SMF A 2000mΩ TO-254 hermetic Yes -55 C to 125 C SMF A 300mΩ TO-254 hermetic Yes -55 C to 125 C SMF A 300mΩ TO-254 hermetic Yes -55 C to 125 C SMF A 850mΩ TO-257 hermetic Yes -55 C to 125 C SMF A 400mΩ TO-254 hermetic Yes -55 C to 125 C SMF A 300mΩ TO-254 hermetic Yes -55 C to 125 C Diodes - Silicon Carbide Type Number Reverse Voltage Forward Current Dual/Single Package Isolated Backside Temp. Range SD A Single TO-247 2L Yes -40 C to 125 C SD A Single TO-247 2L No -40 C to 125 C SDD10120AD A/20A Dual TO-247 3L No -40 C to 125 C SDD50065SHD A Dual TO-247-2L Yes -40 C to 125 C SDA A Single TO-258 hermetic Yes -55 C to 125 C SDA A/20A Dual TO-258 hermetic Yes -55 C to 125 C SDA A Dual TO-258 hermetic Yes -55 C to 125 C IGBTs Type Number Voltage Continuous Current Package Temp. Range SD A TO-3 (<0.300 ) Height / TO C to 125 C
5 SD V, 15mΩ, Silicon Carbide, Half-Bridge Module 55A Drain Current Low Profile 1.38 (35mm) x1.06 (27mm) x 0.20 (5mm) Light-weight Isolated AlSiC Baseplate Internal Thermistor for Temperature Monitoring Very Low Stray Inductance High-Frequency Operation Zero Reverse-recovery Current from Diode Zero Turn-Off Tail Current from MOSFET Ease of Paralleling Solderable Terminals for both Power and Signal for Easy PCB Mount The SD11901 utilizes the most advanced silicon carbide MOSFET and diode technology combined with cutting edge packaging materials to provide the industries smallest; lightest weight 1200V SiC based half bridge. Individually packaged silicon carbide MOSFETs and diodes are also now available from Solitron with both COTS and high reliability screening. 5 6 t D5 D6 Q1 Q3 D1 D Q2 Q4 D2 D4 SD V COTS DC-DC Converter 8V to 36V Input Range +5V Output at 2A 1500V Isolation 1 /16 Brick Format 85% Efficiency >300kHz Switching Frequency Remote Shutdown Over Voltage / Over Current Protection Vin CHASSIS (pin 3) INPUT FILTER + Vin on/off CONTROLLER Chas. VOLTAGE + Vout SDD Vin CURRENT HIGH FREQUENCY SWITCH Input: 8~30VDC Output: 3A max. Gnd SYNC RECTIFIER POWER OUTPUT FILTER SECONDARY SIDE CONTROLLER Vout -55 C to 125 C Operation The SD11772 is the first in a series of ruggedized COTS, low wattage, isolated dc-dc converters. With industry standard 1/16 brick format, the converter is totally encased in advanced thermally conductive material to withstand harsh environments. Due to this packaging heat sinking is not required for most applications. However, under certain extreme situations adding a heatsink provides improved thermal derating performance.
6 CUSTOM SOLUTIONS Solitron appreciates that there are times when standard off the shelf products don t always satisfy system requirements. Tailored electrical and mechanical requirements are often needed to optimize performance. At Solitron, we specialize in customized versions of our standard products as well as full custom circuits. Solitron Devices, Inc Electronics Way, West Palm Beach, FL Telephone: Fax: sales@solitrondevices.com solitron_brocuhure_rev ai
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