N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET TO-262 TO Gate 2. Drain 3. Source
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1 N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET Features High ruggedness Low R DS(ON) (Typ 0.23Ω)@V GS =10V Low Gate Charge (Typ 42nC) Improved dv/dt Capability 100% Avalanche Tested Application: DC-DC,LED,PC Order Codes TO-262 TO-263 TO-220F Gate 2. Drain 3. Source General Description This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BV DSS : 700V I D : 16A R DS(ON) : 0.23Ω Item Sales Type Marking Package Packaging 1 SW U 16N70K SW16N70K TO-262 TUBE 2 SW B 16N70K SW16N70K TO-263 TUBE 3 SW F16N70K SW16N70K TO-220F TUBE Absolute maximum ratings Symbol Parameter Value TO262 TO263 TO220F V DSS Drain to Source Voltage 700 V I D Continuous Drain Current (@T C =100 o C) 10* A Continuous Drain Current (@T C =25 o C) 16* A I DM Drain current pulsed (note 1) 64 A V GS Gate to Source Voltage ± 30 V E AS Single pulsed Avalanche Energy (note 2) 360 mj E AR Repetitive Avalanche Energy (note 1) 50 mj dv/dt MOSFET dv/dt ruggedness (@VDS=0~400V) 30 V/ns dv/dt Peak diode recovery dv/dt (note 3) 20 V/ns P D Derating Factor above 25 o C W/ o C Total power dissipation (@T C =25 o C) W T STG, T J Operating Junction Temperature & Storage Temperature -55 ~ o C Unit T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 o C *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value Unit TO262 TO263 TO220F R thjc Thermal resistance, Junction to case o C/W R thja Thermal resistance, Junction to ambient o C/W 1/7
2 Electrical characteristic ( T C = 25 o C unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BV DSS Drain to source breakdown voltage V GS =0V, I D =250uA 700 V ΔBV DSS Breakdown voltage temperature / ΔT J coefficient I D =250uA, referenced to 25 o C 0.49 V/ o C I DSS Drain to source leakage current V DS =700V, V GS =0V 1 ua V DS =560V, T C =125 o C 50 ua I Gate to source leakage current, forward V GS =30V, V DS =0V 100 na GSS Gate to source leakage current, reverse V GS =-30V, V DS =0V -100 na On characteristics V GS(TH) Gate threshold voltage V DS =V GS, I D =250uA 2 5 V R DS(ON) Drain to source on state resistance V GS =10V, I D =8A Ω Gfs Forward Transconductance V DS =30V, I D =8A 10 S Dynamic characteristics C iss Input capacitance 1530 C oss Output capacitance V GS =0V, V DS =200V, f=1mhz 62 pf C rss Reverse transfer capacitance 2.6 t d(on) Turn on delay time 25 tr t d(off) Rising time Turn off delay time V DS =350V, I D =16A, R G =25Ω, V GS =10V (note 4,5) t f Fall time 40 Q g Total gate charge 42 Q gs Gate-source charge V DS =560V, V GS =10V, I D =16A (note 4,5) 10 Q gd Gate-drain charge 21 ns nc Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction 16 A I SM Pulsed source current diode in the MOSFET 64 A V SD Diode forward voltage drop. I S =16A, V GS =0V 1.4 V T rr Reverse recovery time I S =16A, V GS =0V, 325 ns Q rr Reverse recovery Charge di F /dt=100a/us 5.14 uc. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 80mH, I AS =3A, V DD = 50V, R G =25Ω, Starting T J = 25 o C 3. I SD 16A, di/dt = 100A/us, V DD BV DSS, Staring T J =25 o C Pulse 4. Test : Pulse Width 300us, duty cycle 2%. 5. Essentially independent of operating temperature. 2/7
3 Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature 3/7
4 Fig. 7. Gate charge characteristics Fig. 8. Capacitance Characteristics SW16N70K Fig. 9. Maximum safe operating area(to-262) Fig. 10. Maximum safe operating area(to-263) Fig. 11. Maximum safe operating area(to-220f) 4/7
5 Fig. 12. Transient thermal response curve(to-262) Fig. 13. Transient thermal response curve(to-263) Fig. 14. Transient thermal response curve(to-220f) 5/7
6 Fig. 15. Gate charge test circuit & waveform Fig. 16. Switching time test circuit & waveform R L V DS 90% R GS V DS V DD V IN 10% 10% 10V IN DUT t d(on) t r t d(off) t f t ON t OFF Fig. 17. Unclamped Inductive switching test circuit & waveform 6/7
7 Fig. 18. Peak diode recovery dv/dt test circuit & waveform SW16N70K DUT + V DS V GS (DRIVER) 10V I S - L I (DUT) S di/dt V DS I RM R G V DD Diode reverse current 10V GS Same type as DUT V DS (DUT) Diode recovery dv/dt V F V DD *. dv/dt controlled by RG *. Is controlled by pulse period Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in XI AN SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site ( * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com 7/7
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UNISONIC TECHNOLOGIES CO., LTD 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,
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General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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UNISONIC TECHNOLOGIES CO., LTD 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N50 is a N-channel enhancement mode power MOSFET using UTC s advanced planar stripe and DMOS technology to provide perfect
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General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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UNISONIC TECHNOLOGIES CO., LTD 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar
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UNISONIC TECHNOLOGIES CO., LTD 13NM50-U2 13A, 500V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM50-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such
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UNISONIC TECHNOLOGIES CO., LTD 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC s advanced technology. This technology allows a minimum on-state resistance,
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UNISONIC TECHNOLOGIES CO., LTD 171A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement mode power MOSFET using UTC s advanced technology to
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UNISONIC TECHNOLOGIES CO., LTD 4A, 6V N-CHANNEL POWER MOSFET DESCRIPTION TO-22F TO-22F The UTC 4N6-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
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More informationFeatures. Information I-PAK G D S. Marking. Part Number. Package. I-PAK (Short Lead) SMK0160. Unit. V Gate-source voltage T c =25 C I D I DM
Features SWITCHING REGULATO OR APPLICATION Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g = 3.9nC (Typ.) Low drain-source On resistance: R DS(on) =11.5Ω (Max.) 100% avalanche
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200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state
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UNISONIC TECHNOLOGIES CO., LTD 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS
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General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS
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