MOSFET IPU80R2K4P7. 800VCoolMOSªP7PowerTransistor

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1 MOSFET 800VCoolMOSªP7PowerTransistor Thelatest800VCoolMOS P7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbestinclassperformancewith stateofthearteaseofuse,resultingfrominfineon sover18years pioneeringsuperjunctiontechnologyinnovation. IPAK tab Features BestinclassFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss BestinclassDPAKRDS(on) BestinclassV(GS)thofVandsmallestV(GS)thvariationof±0.5V IntegratedZenerDiodeESDprotection BestinclassCoolMOS qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtojedec(jstd20andjesd22) Fullyoptimizedportfolio 1 2 Drain Pin 2, Tab Benefits Bestinclassperformance Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts Easytodriveandtoparallel BetterproductionyieldbyreducingESDrelatedfailures Lessproductionissuesandreducedfieldreturns Easytoselectrightpartsforfinetuningofdesigns Gate Pin 1 Source Pin Applications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andsolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj=25 C 800 V RDS(on),max 2.4 Ω Qg,typ 8 nc ID 2.5 A 500V 0.74 µj VGS(th),typ V ESD class (HBM) 1C Type/OrderingCode Package Marking RelatedLinks PGTO R2K4P7 see Appendix A 1

2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer

3 1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC=25 C TC=100 C Pulsed drain current 2) ID,pulse 5. A TC=25 C Avalanche energy, single pulse EAS 4 mj ID=0.A; VDD=50V Avalanche energy, repetitive EAR 0.04 mj ID=0.A; VDD=50V Avalanche current, repetitive IAR 0. A MOSFET dv/dt ruggedness dv/dt 100 V/ns VDS=0to400V Gate source voltage VGS V static; AC (f>1 Hz) Power dissipation Ptot 22 W TC=25 C Operating and storage temperature Tj,Tstg C Continuous diode forward current IS 1.9 A TC=25 C Diode pulse current 2) IS,pulse 5.0 A TC=25 C Reverse diode dv/dt ) dv/dt 1 V/ns VDS=0to400V,ISD<=0.4A,Tj=25 C Maximum diode commutation speed ) dif/dt 50 A/µs VDS=0to400V,ISD<=0.4A,Tj=25 C 2Thermalcharacteristics TableThermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 5.6 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W n.a. Tsold 260 C 1.6 mm (0.06 in.) from case for 10s 1) Limited by Tj max. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max ) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs

4 Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 800 V VGS=0V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=0.04mA Zero gate voltage drain current Gatesource leakage curent incl. zener diode Drainsource onstate resistance IDSS 10 1 µa VDS=800V,VGS=0V,Tj=25 C VDS=800V,VGS=0V,Tj=150 C IGSS 1 µa VGS=20V,VDS=0V RDS(on) Ω VGS=10V,ID=0.8A,Tj=25 C VGS=10V,ID=0.8A,Tj=150 C Gate resistance RG 4.0 Ω f=250khz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 150 pf VGS=0V,VDS=500V,f=250kHz Output capacitance Coss.8 pf VGS=0V,VDS=500V,f=250kHz Effective output capacitance, energy related 1) Co(er) 6 pf VGS=0V,VDS=0to500V Effective output capacitance, time related 2) Co(tr) 5 pf ID=constant,VGS=0V,VDS=0to500V Turnon delay time td(on) 8 ns Rise time tr 10 ns Turnoff delay time td(off) 40 ns Fall time tf 0 ns VDD=400V,VGS=1V,ID=0.82A, RG=6Ω VDD=400V,VGS=1V,ID=0.82A, RG=6Ω VDD=400V,VGS=1V,ID=0.82A, RG=6Ω VDD=400V,VGS=1V,ID=0.82A, RG=6Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 0.6 nc VDD=640V,ID=0.82A,VGS=0to10V Gate to drain charge Qgd.4 nc VDD=640V,ID=0.82A,VGS=0to10V Gate charge total Qg 7.5 nc VDD=640V,ID=0.82A,VGS=0to10V Gate plateau voltage Vplateau 4.5 V VDD=640V,ID=0.82A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V 4

5 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=0.82A,Tf=25 C Reverse recovery time trr 600 ns VR=400V,IF=0.41A,diF/dt=50A/µs Reverse recovery charge Qrr 2.5 µc VR=400V,IF=0.41A,diF/dt=50A/µs Peak reverse recovery current Irrm 5.6 A VR=400V,IF=0.41A,diF/dt=50A/µs 5

6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 25 Diagram2:Safeoperatingarea ms 10 ms 100 µs 10 µs 1 µs DC Ptot[W] ID[A] TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram:Safeoperatingarea 10 2 Diagram4:Max.transientthermalimpedance 10 1 ID[A] µs 1 ms 10 ms DC 10 µs 1 µs ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 6

7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V 10 V 8 V 7 V V 10 V 8 V 7 V 6 V V V 5 V ID[A] V 5 V ID[A] V V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance V 5.5 V 6 V 6.5 V 7 V 10 V Diagram8:Drainsourceonstateresistance RDS(on)[Ω] 6 5 RDS(on)[Ω] % typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=0.82A;VGS=10V 7

8 Diagram9:Typ.transfercharacteristics 6 Diagram10:Typ.gatecharge C V 640 V ID[A] 150 C VGS[V] VGS[V] ID=f(VGS);VDS=20V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=0.82Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode C 125 C Diagram12:Avalancheenergy IF[A] EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=0.A;VDD=50V 8

9 Diagram1:Drainsourcebreakdownvoltage 950 Diagram14:Typ.capacitances Ciss VBR(DSS)[V] 800 C[pF] 10 1 Coss Crss Tj[ C] VBR(DSS)=f(Tj);ID=1mA VDS[V] C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 9

10 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 90% V DS V GS V GS 10% t d(on) t r t d(off) t f t on t off Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS 10

11 11 800VCoolMOSªP7PowerTransistor 6PackageOutlines N L2 L MILLIMETERS A1 b4 b2 b A DIM D1 E E1 c2 D e1 e c MIN m MAX j INCHES MIN MAX m 2.0 EUROPEAN PROJECTION ISSUE DATE SCALE 0 4mm REVISION DOCUMENT NO. Z8B L1 c Figure1OutlinePGTO251,dimensionsinmm/inches

12 7AppendixA Table11RelatedLinks IFXCoolMOSWebpage: IFXDesigntools: 12

13 RevisionHistory Revision: ,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 2017InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 1