MOSFET IPAN70R600P7S. 700VCoolMOSªP7PowerTransistor

Transcription

1 MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. ThelatestCoolMOS P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,tv,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof thearteaseofuselevel.thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. PGTO220FP Features ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss Excellentthermalbehavior IntegratedESDprotectiondiode Lowswitchinglosses(Eoss) Productvalidationacc.JEDECStandard Benefits Costcompetitivetechnology Lowertemperature HighESDruggedness Enablesefficiencygainsathigherswitchingfrequencies Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj=25 C 700 V RDS(on),max 0.6 Ω Qg,typ.5 nc ID,pulse 20.5 A 400V 1.2 µj V(GS)th,typ 3 V ESD class (HBM) 2 Type/OrderingCode Package Marking RelatedLinks PGTO 220 FullPAK Narrow Lead 70S600P7 see Appendix A 1 Rev.2.1,

2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer Rev.2.1,

3 1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC = 20 C TC = 0 C Pulsed drain current 2) ID,pulse 20.5 A TC=25 C Application (Flyback) relevant avalanche current, single pulse 3) IAS 3.2 A MOSFET dv/dt ruggedness dv/dt 0 V/ns VDS= V Gate source voltage VGS V measured with standard leakage inductance of transformer of 7µH static; AC (f>1 Hz) Power dissipation Ptot 24.9 W TC=25 C Operating and storage temperature Tj,Tstg C Continuous diode forward current IS 4.5 A TC=25 C Diode pulse current 2) IS,pulse 20.5 A TC = 25 C Reverse diode dv/dt 4) dv/dt 1 V/ns VDS= V,ISD<=IS,Tj=25 C Maximum diode commutation speed 4) dif/dt 50 A/µs VDS= V,ISD<=IS,Tj=25 C Insulation withstand voltage VISO 2500 V Vrms, TC=25 C, t=1min 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction RthJC 5.0 C/W Thermal resistance, junction ambient RthJA 80 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W n.a. Tsold 260 C 1.6 mm (0.063 in.) from case for s 1) DPAK / IPAK equivalent. Limited by Tj max. Tj = 20 C. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN CoolMOS TM 700V P7. 4) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 3 Rev.2.1,

4 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 700 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th V VDS=VGS,ID=0.09mA Zero gate voltage drain current IDSS 1 µa VDS=700V,VGS=0V,Tj=25 C VDS=700V,VGS=0V,Tj=150 C Gatesource leakage current incl. Zener IGSS 1 µa VGS=20V,VDS=0V diode Drainsource onstate resistance RDS(on) Ω VGS=V,ID=1.8A,Tj=25 C VGS=V,ID=1.8A,Tj=150 C Gate resistance RG Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 364 pf VGS=0V,VDS=400V,f=250kHz Output capacitance Coss 7 pf VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) 17 pf VGS=0V,VDS= V Effective output capacitance, time related 2) Co(tr) 200 pf ID=constant,VGS=0V,VDS= V Turnon delay time td(on) 14 ns Rise time tr 5.5 ns Turnoff delay time td(off) 63 ns Fall time tf 23 ns VDD=400V,VGS=13V,ID=1.4A, RG=5.3Ω VDD=400V,VGS=13V,ID=1.4A, RG=5.3Ω VDD=400V,VGS=13V,ID=1.4A, RG=5.3Ω VDD=400V,VGS=13V,ID=1.4A, RG=5.3Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 1.6 nc VDD=400V,ID=1.4A,VGS=0toV Gate to drain charge Qgd 3.7 nc VDD=400V,ID=1.4A,VGS=0toV Gate charge total Qg.5 nc VDD=400V,ID=1.4A,VGS=0toV Gate plateau voltage Vplateau 4.4 V VDD=400V,ID=1.4A,VGS=0toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 4 Rev.2.1,

5 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=2.5A,Tj=25 C Reverse recovery time trr 190 ns VR=400V,IF=1.4A,diF/dt=50A/µs Reverse recovery charge Qrr 0.8 µc VR=400V,IF=1.4A,diF/dt=50A/µs Peak reverse recovery current Irrm 9 A VR=400V,IF=1.4A,diF/dt=50A/µs 5 Rev.2.1,

6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea µs 1 µs 20 0 µs Ptot[W] 15 ID[A] 0 1 ms ms 1 DC TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 2 Diagram4:Max.transientthermalimpedance 1 1 µs 0 µs 1 µs 0.5 ID[A] ms ms ZthJC[K/W] DC VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp single pulse tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,

7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V V 8 V 7 V V V 8 V 7 V ID[A] 15 6 V 5.5 V ID[A] V 5.5 V 5 V 5 5 V V 4.5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance V 5.5 V V 6.5 V 7 V Diagram8:Drainsourceonstateresistance RDS(on)[Ω] 1.5 V RDS(on)[Ω] % typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=1.8A;VGS=V 7 Rev.2.1,

8 Diagram9:Typ.transfercharacteristics 25 Diagram:Typ.gatecharge C V 400 V ID[A] 150 C VGS[V] VGS[V] ID=f(VGS);VDS=20V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=1.4Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 2 25 C 125 C Diagram13:Drainsourcebreakdownvoltage IF[A] VBR(DSS)[V] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] VBR(DSS)=f(Tj);ID=1mA 8 Rev.2.1,

9 Diagram14:Typ.capacitances 4 Diagram15:Typ.Cossstoredenergy Ciss C[pF] 1 Coss Eoss[µJ] Crss VDS[V] C=f(VDS);VGS=0V;f=250kHz VDS[V] Eoss=f(VDS) 9 Rev.2.1,

10 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 90% V DS V GS V GS % t d(on) t r t d(off) t f t on t off TableUnclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS Rev.2.1,

11 6PackageOutlines DIMENSIONS MILLIMETERS MIN. MAX. DOCUMENT NO. A Z8B A1 A REVISION 04 b b SCALE 5:1 c D D1 E e N L L1 øp Q EUROPEAN PROJECTION ISSUE DATE Figure1OutlinePGTO220FullPAKNarrowLead,dimensionsinmmIndustrialGrade mm 11 Rev.2.1,

12 7AppendixA Table11RelatedLinks IFXCoolMOSªP7Webpage: IFXDesigntools: 12 Rev.2.1,

13 RevisionHistory Revision: ,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Corrected front page text TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13 Rev.2.1,