MOSFET IPI045N10N3G. OptiMOS ª 3Power-Transistor,100V

Transcription

1 IPI45N1N3G MOSFET OptiMOS ª 3PowerTransistor,1V Features Nchannel,normallevel ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) 175 Coperatingtemperature Pbfreeleadplating;RoHScompliant QualifiedaccordingtoJEDEC 1) fortargetapplication Idealforhighfrequencyswitchingandsynchronousrectification HalogenfreeaccordingtoIEC I²PAK tab Table1KeyPerformanceParameters Parameter Value Unit VDS 1 V RDS(on),max 4.5 mω ID 137 A Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Type/OrderingCode Package Marking RelatedLinks IPI45N1N3 G PGTO N1N 1) JSTD2 and JESD22 1 Rev.2.9,217728

2 OptiMOS ª 3PowerTransistor,1V IPI45N1N3G TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer Rev.2.9,217728

3 OptiMOS ª 3PowerTransistor,1V IPI45N1N3G 1Maximumratings atta=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Unit Note/TestCondition Continuous drain current ID A TC=25 C 1) TC=1 C Pulsed drain current 1) ID,pulse 548 A TC=25 C Avalanche energy, single pulse EAS 34 mj ID=1A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot 214 W TC=25 C Operating and storage temperature Tj,Tstg C IEC climatic category; DIN IEC 681: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Unit Note/TestCondition Thermal resistance, junction case RthJC.7 K/W Thermal resistance, junction ambient, minimal footprint RthJA 62 K/W Thermal resistance, junction ambient, 6 cm 2 cooling area 2) RthJA 5 K/W 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 1 V VGS=V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=15µA Zero gate voltage drain current IDSS µa VDS=1V,VGS=V,Tj=25 C VDS=1V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance RG 1.4 Ω mω VGS=1V,ID=1A VGS=6V,ID=5A Transconductance gfs S VDS >2 ID RDS(on)max,ID=1A 1) See Diagram 3 2) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 3 Rev.2.9,217728

4 OptiMOS ª 3PowerTransistor,1V IPI45N1N3G Table5Dynamiccharacteristics Parameter Symbol Unit Note/TestCondition Input capacitance Ciss pf VGS=V,VDS=5V,f=1MHz Output capacitance Coss pf VGS=V,VDS=5V,f=1MHz Reverse transfer capacitance Crss 41 pf VGS=V,VDS=5V,f=1MHz Turnon delay time td(on) 27 ns Rise time tr 59 ns Turnoff delay time td(off) 48 ns Fall time tf 14 ns VDD=5V,VGS=1V,ID=5A, RG=1.6Ω VDD=5V,VGS=1V,ID=5A, RG=1.6Ω VDD=5V,VGS=1V,ID=5A, RG=1.6Ω VDD=5V,VGS=1V,ID=5A, RG=1.6Ω Table6Gatechargecharacteristics 1) Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 3 39 nc VDD=5V,ID=1A,VGS=to1V Gate to drain charge Qgd 16 nc VDD=5V,ID=1A,VGS=to1V Switching charge Qsw 27 nc VDD=5V,ID=1A,VGS=to1V Gate charge total Qg nc VDD=5V,ID=1A,VGS=to1V Gate plateau voltage Vplateau 4.7 V VDD=5V,ID=1A,VGS=to1V Output charge Qoss nc VDD=5V,VGS=V Table7Reversediode Parameter Symbol Unit Note/TestCondition Diode continous forward current IS 137 A TC=25 C Diode pulse current IS,pulse 548 A TC=25 C Diode forward voltage VSD V VGS=V,IF=1A,Tj=25 C Reverse recovery time trr 68 ns VR=5V,IF=IS,diF/dt=1A/µs Reverse recovery charge Qrr 135 nc VR=5V,IF=IS,diF/dt=1A/µs 1) See Gate charge waveforms for parameter definition 4 Rev.2.9,217728

5 OptiMOS ª 3PowerTransistor,1V IPI45N1N3G 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 25 Diagram2:Draincurrent Ptot[W] TC[ C] Ptot=f(TC) TC[ C] ID=f(TC);VGS 1V Diagram3:Safeoperatingarea 1 3 Diagram4:Max.transientthermalimpedance 1 1 µs 1 µs µs.2 1 ms ms DC ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp tp[s] ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.9,217728

6 OptiMOS ª 3PowerTransistor,1V IPI45N1N3G Diagram5:Typ.outputcharacteristics 4 1 V 7.5 V 6 V 32 Diagram6:Typ.drainsourceonresistance V 6 5 V V RDS(on)[mΩ] 6 V 7.5 V 1 V 5 V V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 2 Diagram8:Typ.forwardtransconductance gfs[s] C 25 C VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj gfs=f(id);tj=25 C 6 Rev.2.9,217728

7 OptiMOS ª 3PowerTransistor,1V IPI45N1N3G Diagram9:Drainsourceonstateresistance 1 Diagram1:Typ.gatethresholdvoltage µa RDS(on)[mΩ] % typ VGS(th)[V] µa Tj[ C] RDS(on)=f(Tj);ID=1A;VGS=1V Tj[ C] VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 1 4 Ciss C 25 C, max 175 C 175 C, max Coss C[pF] IF[A] 1 2 Crss VDS[V] C=f(VDS);VGS=V;f=1MHz VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.9,217728

8 OptiMOS ª 3PowerTransistor,1V IPI45N1N3G Diagram13:Avalanchecharacteristics 1 3 Diagram14:Typ.gatecharge 1 8 IAS[A] C 1 C VGS[V] 6 2 V 8 V 5 V C tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) Qgate[nC] VGS=f(Qgate);ID=1Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 11 Gate charge waveforms 15 VBR(DSS)[V] Tj[ C] VBR(DSS)=f(Tj);ID=1mA 8 Rev.2.9,217728

9 OptiMOSª3 PowerTransistor, 1 V IPI45N1N3 G 5 Package Outlines Figure 1 Outline PGTO 2623, dimensions in mm/inches 9 Rev. 2.9,

10 OptiMOSª3 PowerTransistor, 1 V IPI45N1N3 G Revision History IPI45N1N3 G Revision: , Rev. 2.9 Previous Revision Revision Date Subjects (major changes since last revision) Update product current Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CoolGaN, CoolMOS, CoolSET, CoolSiC, CORECONTROL, CROSSAVE, DAVE, DIPOL, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, Infineon, ISOFACE, IsoPACK, iwafer, MIPAQ, ModSTACK, myd, NovalithIC, OmniTune, OPTIGA, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PROFET, PROSIL, RASIC, REAL3, ReverSave, SatRIC, SIEGET, SIPMOS, SmartLEWIS, SOLID FLASH, SPOC, TEMPFET, thinq, TRENCHSTOP, TriCore. Trademarks updated August 215 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG München, Germany 217 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 1 Rev. 2.9,