MOSFET IPN80R600P7. 800VCoolMOSªP7PowerTransistor

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1 MOSFET 8VCoolMOSªP7PowerTransistor Thelatest8VCoolMOS P7seriessetsanewbenchmarkin8V superjunctiontechnologiesandcombinesbestinclassperformancewith stateofthearteaseofuse,resultingfrominfineon sover18years pioneeringsuperjunctiontechnologyinnovation. PGSOT223 Features BestinclassFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss BestinclassDPAKRDS(on) BestinclassV(GS)thof3VandsmallestV(GS)thvariationof±.5V IntegratedZenerDiodeESDprotection Fullyqualifiedacc.JEDECforIndustrialApplications Fullyoptimizedportfolio Benefits Bestinclassperformance Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts Easytodriveandtoparallel BetterproductionyieldbyreducingESDrelatedfailures Lessproductionissuesandreducedfieldreturns Easytoselectrightpartsforfinetuningofdesigns Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andsolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj=25 C 8 V RDS(on),max.6 Ω Qg,typ 2 nc ID 8 A 5V 2. µj VGS(th),typ 3 V ESD class (HBM) 2 Type/OrderingCode Package Marking RelatedLinks PGSOT223 8R6 see Appendix A 1 Rev.2.1,21829

2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer Rev.2.1,21829

3 1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC=25 C TC= C Pulsed drain current 2) ID,pulse 22 A TC=25 C Avalanche energy, single pulse EAS 2 mj ID=1.4A; VDD=5V Avalanche energy, repetitive EAR.17 mj ID=1.4A; VDD=5V Avalanche current, repetitive IAR 1.4 A MOSFET dv/dt ruggedness dv/dt V/ns VDS=to4V Gate source voltage VGS V static; AC (f>1 Hz) Power dissipation Ptot 7.4 W TC=25 C Operating and storage temperature Tj,Tstg C Continuous diode forward current IS 2.2 A TC=25 C Diode pulse current 2) IS,pulse 22 A TC=25 C Reverse diode dv/dt 3) dv/dt 1 V/ns VDS=to4V,ISD<=1.7A,Tj=25 C Maximum diode commutation speed 3) dif/dt 5 A/µs VDS=to4V,ISD<=1.7A,Tj=25 C 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction solder point RthJS 17. C/W Thermal resistance, junction ambient RthJA 16 C/W Device on PCB, minimal footprint Thermal resistance, junction ambient soldered on copper area Soldering temperature, wave & reflow soldering allowed RthJA 75 C/W Tsold 26 C reflow MSL1 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer 7µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. 1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=.5 2) Pulse width tp limited by Tj,max 3) VDClink=4V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs 3 Rev.2.1,21829

4 3Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 8 V VGS=V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=.17mA Zero gate voltage drain current Gatesource leakage curent incl. zener diode Drainsource onstate resistance IDSS 1 µa VDS=8V,VGS=V,Tj=25 C VDS=8V,VGS=V,Tj=15 C IGSS 1 µa VGS=2V,VDS=V RDS(on) Ω VGS=V,ID=3.4A,Tj=25 C VGS=V,ID=3.4A,Tj=15 C Gate resistance RG 1 Ω f=25khz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 57 pf VGS=V,VDS=5V,f=25kHz Output capacitance Coss 11 pf VGS=V,VDS=5V,f=25kHz Effective output capacitance, energy related 1) Co(er) 17 pf VGS=V,VDS=to5V Effective output capacitance, time related 2) Co(tr) 252 pf ID=constant,VGS=V,VDS=to5V Turnon delay time td(on) 8 ns Rise time tr 8 ns Turnoff delay time td(off) 4 ns Fall time tf ns VDD=4V,VGS=13V,ID=3.4A, RG=Ω VDD=4V,VGS=13V,ID=3.4A, RG=Ω VDD=4V,VGS=13V,ID=3.4A, RG=Ω VDD=4V,VGS=13V,ID=3.4A, RG=Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 2 nc VDD=64V,ID=3.4A,VGS=toV Gate to drain charge Qgd 8 nc VDD=64V,ID=3.4A,VGS=toV Gate charge total Qg 2 nc VDD=64V,ID=3.4A,VGS=toV Gate plateau voltage Vplateau 4.5 V VDD=64V,ID=3.4A,VGS=toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto5V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto5V 4 Rev.2.1,21829

5 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=3.4A,Tf=25 C Reverse recovery time trr 64 ns VR=4V,IF=1.7A,diF/dt=5A/µs Reverse recovery charge Qrr 6 µc VR=4V,IF=1.7A,diF/dt=5A/µs Peak reverse recovery current Irrm 14 A VR=4V,IF=1.7A,diF/dt=5A/µs 5 Rev.2.1,21829

6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea ms 1 ms µs µs 1 µs 6 Ptot[W] 5 ID[A] DC TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram3:Safeoperatingarea 2 Diagram4:Max.transientthermalimpedance ms µs µs 1 µs ms 1.5 ID[A] 1 DC ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,21829

7 Diagram5:Typ.outputcharacteristics 25 2 V V 8 V 7 V 2 6 V Diagram6:Typ.outputcharacteristics V V 8 V 7 V 6 V 15 ID[A] 5.5 V ID[A] 5.5 V 5 V 5 V V V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance V 5.5 V 6 V 6.5 V 7 V V Diagram8:Drainsourceonstateresistance RDS(on)[Ω] RDS(on)[Ω] % 1..4 typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=3.4A;VGS=V 7 Rev.2.1,21829

8 Diagram9:Typ.transfercharacteristics 25 Diagram:Typ.gatecharge 25 C ID[A] C VGS[V] V 64 V VGS[V] ID=f(VGS);VDS=2V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=3.4Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 2 25 C 125 C Diagram12:Avalancheenergy IF[A] EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=1.7A;VDD=5V 8 Rev.2.1,21829

9 Diagram13:Drainsourcebreakdownvoltage 95 Diagram14:Typ.capacitances Ciss 85 2 VBR(DSS)[V] 8 C[pF] 1 Coss 75 Crss Tj[ C] VBR(DSS)=f(Tj);ID=1mA VDS[V] C=f(VDS);VGS=V;f=25kHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 9 Rev.2.1,21829

10 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS % t d(on) t r t d(off) t f t on t off TableUnclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS Rev.2.1,21829

11 6PackageOutlines DOCUMENT NO. Z8B18553 DIM MILLIMETERS MIN MAX A A1. A2 1,5 1.7 b.6.8 b c D E E1 e e1 L N O BASIC 4.6 BASIC SCALE 2.5 EUROPEAN PROJECTION 2.5 ISSUE DATE REVISION 1 5mm Figure1OutlinePGSOT223,dimensionsinmmIndustrialGrade 11 Rev.2.1,21829

12 7AppendixA Table11RelatedLinks IFXCoolMOSWebpage: IFXDesigntools: 12 Rev.2.1,21829

13 RevisionHistory Revision:21829,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Corrected front page text TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 218InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13 Rev.2.1,21829